SI1034X-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 0.18A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
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Technische Details SI1034X-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-89 (SOT-563F).
Weitere Produktangebote SI1034X-T1-GE3 nach Preis ab 0.22 EUR bis 0.72 EUR
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SI1034X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.18A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 7813 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1034X-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 133505 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1034X-T1-GE3 | Hersteller : VISHAY |
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| SI1034X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 190mA; Idm: 0.65A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.19A Pulsed drain current: 0.65A Power dissipation: 0.28W Case: SC89; SOT563 Gate-source voltage: ±5V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |