![SI1013X-T1-GE3 SI1013X-T1-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/1029/SC-89-3_463C.jpg)
SI1013X-T1-GE3 Vishay Siliconix
![si1013rx.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
9000+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1013X-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Power Dissipation (Max): 250mW (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-89-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V.
Weitere Produktangebote SI1013X-T1-GE3 nach Preis ab 0.2 EUR bis 0.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SI1013X-T1-GE3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 9669 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SI1013X-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V |
auf Bestellung 19337 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
SI1013X-T1-GE3 |
![]() |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
![]() |
SI1013X-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -400mA; Idm: -1A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Pulsed drain current: -1A Power dissipation: 0.275W Case: SC89 Gate-source voltage: ±6V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SI1013X-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SI1013X-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -400mA; Idm: -1A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Pulsed drain current: -1A Power dissipation: 0.275W Case: SC89 Gate-source voltage: ±6V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |