SI7922DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.23 EUR |
| 6000+ | 1.19 EUR |
| 9000+ | 1.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7922DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SI7922DN-T1-GE3 nach Preis ab 1.3 EUR bis 2.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7922DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 6043 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI7922DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 42035 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI7922DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||
| SI7922DN-T1-GE3 | Hersteller : VISHAY |
SI7922DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |