| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FPF2286UCX | ONSEMI |
 Category: Power switches - integrated circuitsDescription: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 25mΩ Output current: 4A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP6 Supply voltage: 2.8...23V DC |
Produkt ist nicht verfügbar |
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| FPF2290BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 33mΩ Output current: 4.5A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP12 Supply voltage: 2.5...23V DC |
Produkt ist nicht verfügbar |
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| NL17SZ16DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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NL27WZ16DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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NL27WZ16DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: TSOP6 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C |
auf Bestellung 1520 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC847BDW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 150...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| FDC3512 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SuperSOT-6 Drain-source voltage: 80V Drain current: 3A On-state resistance: 141mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC3601N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 976mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Case: SuperSOT-6 Drain-source voltage: 100V Drain current: 2.6A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDC602P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC608PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.8A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 43mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3024 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2531 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6310P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 184mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC6312P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate charge: 16nC Case: SuperSOT-6 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 41mΩ Drain current: 6.2A Drain-source voltage: 20V |
auf Bestellung 2279 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Case: SuperSOT-6 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 41mΩ Drain current: 6.2A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |
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FDC653N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC855N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.1A Pulsed drain current: 20A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 39.3mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDC8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDC8886 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MMBTA55LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225/0.3W Kind of package: reel; tape Collector-emitter voltage: 60V Current gain: 100 Collector current: 0.5A Type of transistor: PNP Polarisation: bipolar Frequency: 50MHz |
auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP3335ADM330R2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD Mounting: SMD Case: Micro8 Tolerance: ±1.5% Operating temperature: -40...85°C Manufacturer series: NCP3335A Output voltage: 3.3V Output current: 0.5A Voltage drop: 0.34V Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 2.6...12V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| FDMC8015L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Power dissipation: 24W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 39mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
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HUF75645P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 238nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75645S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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HUF75652G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247 Mounting: THT Case: TO247 Drain-source voltage: 100V Drain current: 75A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 515W Polarisation: unipolar Kind of package: tube Gate charge: 475nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| NCP5500DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
Produkt ist nicht verfügbar |
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| NCP5501DT33G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
Produkt ist nicht verfügbar |
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NCP5501DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±4.9% Number of channels: 1 Input voltage: 4.3...16V |
Produkt ist nicht verfügbar |
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| NCP5661DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...9V Manufacturer series: NCP5661 |
Produkt ist nicht verfügbar |
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| NCV5500DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4.9% Number of channels: 1 Application: automotive industry Input voltage: 4.3...16V Manufacturer series: NCV5500 |
Produkt ist nicht verfügbar |
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| NCV5501DT33RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4.9% Number of channels: 1 Application: automotive industry Input voltage: 4.3...16V Manufacturer series: NCV5501 |
Produkt ist nicht verfügbar |
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| NRVHPM120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Mounting: SMD Application: automotive industry Case: POWERMITE Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
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| FXL2TD245L10X | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape Mounting: SMD Case: MicorPAK10 Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 2 Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of inputs: 2 Number of outputs: 2 Supply voltage: 1.1...3.6V DC Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| 2SC6097-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.8W Case: DPAK Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
Produkt ist nicht verfügbar |
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| FDB075N15A-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDBL0630N150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L Type of transistor: N-MOSFET Case: H-PSOF8L Mounting: SMD Power dissipation: 500W Kind of package: reel; tape Drain-source voltage: 150V Drain current: 169A On-state resistance: 17.5mΩ Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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NTR2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2601 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002T | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 775 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002T | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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| NC7SV125P5X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: NC |
Produkt ist nicht verfügbar |
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FDC6303N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Power dissipation: 0.9W Kind of package: reel; tape On-state resistance: 0.8Ω Polarisation: unipolar Gate charge: 2.3nC Technology: PowerTrench® Drain current: 0.68A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 |
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| FDC6320C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 9/10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC6321C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 25/-25V Drain current: 0.68/-0.46A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 720/1220mΩ Mounting: SMD Gate charge: 2.3/1.5nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1560 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6323L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Output current: 1.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 1.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...8V DC |
Produkt ist nicht verfügbar |
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FDC6327C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 2.7/-1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.13/0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 2.5/-2A On-state resistance: 150/220mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.6/5.7nC Technology: PowerTrench® Case: SuperSOT-6 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±16/±25V |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164P-3G | ONSEMI |
 Category: Watchdog and reset circuitsDescription: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92 Mounting: SMD Operating temperature: -40...125°C Case: TO92 Kind of package: bulk Active logical level: low Kind of RESET output: open collector Threshold on-voltage: 2.71V Kind of integrated circuit: power on reset monitor (PoR) DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: Supervisor Integrated Circuit Maximum output current: 30mA |
Produkt ist nicht verfügbar |
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MC33164P-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92 Kind of package: bulk DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: Supervisor Integrated Circuit Maximum output current: 50mA Active logical level: low Kind of RESET output: open collector Threshold on-voltage: 4.33V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Operating temperature: -40...125°C Case: TO92 |
auf Bestellung 1303 Stücke: Lieferzeit 14-21 Tag (e) |
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FJP5027OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB Kind of package: tube Collector-emitter voltage: 800V Current gain: 20...40 Collector current: 3A Type of transistor: NPN Power dissipation: 50W Polarisation: bipolar Mounting: THT Case: TO220AB Frequency: 15MHz |
Produkt ist nicht verfügbar |
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| CAV93C56VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: Microwire Memory organisation: 256x8/128x16bit Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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MMBTA63LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) |
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| FXL6408UMX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷3.6VDC; SMD; UMLP16; Ch: 8; 1.5uA Type of integrated circuit: interface Case: UMLP16 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 8 Quiescent current: 1.5µA Kind of integrated circuit: I/O expander Supply voltage: 1.65...3.6V DC |
Produkt ist nicht verfügbar |
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| MURS480ET3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Mounting: SMD Load current: 4A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 70A Kind of package: reel; tape Type of diode: rectifying Case: SMC Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.8kV Max. forward voltage: 1.53V |
Produkt ist nicht verfügbar |
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF45N15V2 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 69W Polarisation: unipolar Drain current: 16A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PQFN8 On-state resistance: 96mΩ |
Produkt ist nicht verfügbar |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2707 Stücke: Lieferzeit 14-21 Tag (e) |
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NSIC2020JBT3G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SMB; 120V; 3W; 20mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SMB Mounting: SMD Operating temperature: -55...150°C Operating voltage: 120V Power dissipation: 3W Operating current: 20mA |
Produkt ist nicht verfügbar |
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| ES2A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
| FPF2286UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
Produkt ist nicht verfügbar
| FPF2290BUCX-F130 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
Produkt ist nicht verfügbar
| NL17SZ16DFT2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
| NL27WZ16DFT2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| NL27WZ16DTT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: TSOP6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: TSOP6
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 250+ | 0.29 EUR |
| 373+ | 0.19 EUR |
| 395+ | 0.18 EUR |
| SBC847BDW1T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
| FDC3512 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC3601N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC3612 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC602P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC608PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3024 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 134+ | 0.54 EUR |
| 236+ | 0.3 EUR |
| 250+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| FDC610PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2531 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 235+ | 0.3 EUR |
| 248+ | 0.29 EUR |
| FDC6310P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC6312P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 93+ | 0.77 EUR |
| 156+ | 0.46 EUR |
| 169+ | 0.42 EUR |
| 205+ | 0.35 EUR |
| 217+ | 0.33 EUR |
| 1000+ | 0.32 EUR |
| FDC637AN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
auf Bestellung 2279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 137+ | 0.52 EUR |
| 145+ | 0.49 EUR |
| FDC637BNZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
| FDC653N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.69 EUR |
| 140+ | 0.51 EUR |
| 174+ | 0.41 EUR |
| 184+ | 0.39 EUR |
| FDC855N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC8878 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC8886 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MMBTA55LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225/0.3W
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225/0.3W
Kind of package: reel; tape
Collector-emitter voltage: 60V
Current gain: 100
Collector current: 0.5A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 50MHz
auf Bestellung 1735 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 772+ | 0.093 EUR |
| 1142+ | 0.063 EUR |
| 1735+ | 0.041 EUR |
| NCP3335ADM330R2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Mounting: SMD
Case: Micro8
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; Micro8; SMD
Mounting: SMD
Case: Micro8
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 3.3V
Output current: 0.5A
Voltage drop: 0.34V
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 2.6...12V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
| FDMC8015L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Power dissipation: 24W
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 18A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
| HUF75645P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 3.35 EUR |
| 25+ | 2.96 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| HUF75645S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| HUF75652G3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 100V
Drain current: 75A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 515W
Polarisation: unipolar
Kind of package: tube
Gate charge: 475nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 100V
Drain current: 75A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 515W
Polarisation: unipolar
Kind of package: tube
Gate charge: 475nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| NCP5500DT33RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Produkt ist nicht verfügbar
| NCP5501DT33G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Produkt ist nicht verfügbar
| NCP5501DT33RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±4.9%
Number of channels: 1
Input voltage: 4.3...16V
Produkt ist nicht verfügbar
| NCP5661DT33RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...9V
Manufacturer series: NCP5661
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...9V
Manufacturer series: NCP5661
Produkt ist nicht verfügbar
| NCV5500DT33RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5500
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5500
Produkt ist nicht verfügbar
| NCV5501DT33RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5501
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 4.3...16V
Manufacturer series: NCV5501
Produkt ist nicht verfügbar
| NRVHPM120T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Mounting: SMD
Application: automotive industry
Case: POWERMITE
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V
Mounting: SMD
Application: automotive industry
Case: POWERMITE
Max. load current: 2A
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
| FXL2TD245L10X |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape
Mounting: SMD
Case: MicorPAK10
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.1...3.6V DC
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK10; -40÷85°C; reel,tape
Mounting: SMD
Case: MicorPAK10
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.1...3.6V DC
Type of integrated circuit: digital
Produkt ist nicht verfügbar
| 2SC6097-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.8W
Case: DPAK
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Produkt ist nicht verfügbar
| FDB075N15A-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDBL0630N150 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| NTR2101PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2601 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 243+ | 0.29 EUR |
| 304+ | 0.24 EUR |
| 341+ | 0.21 EUR |
| 589+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 2N7002T |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 475+ | 0.15 EUR |
| 540+ | 0.13 EUR |
| 605+ | 0.12 EUR |
| 645+ | 0.11 EUR |
| 2N7002T |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 0.24 EUR |
| 410+ | 0.17 EUR |
| 470+ | 0.15 EUR |
| 525+ | 0.14 EUR |
| 555+ | 0.13 EUR |
| NC7SV125P5X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: NC
Produkt ist nicht verfügbar
| FDC6303N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
| FDC6320C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC6321C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| 120+ | 0.6 EUR |
| 197+ | 0.36 EUR |
| 209+ | 0.34 EUR |
| FDC6323L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Produkt ist nicht verfügbar
| FDC6327C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 112+ | 0.64 EUR |
| 250+ | 0.29 EUR |
| 265+ | 0.27 EUR |
| 1000+ | 0.26 EUR |
| FDC6333C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Case: SuperSOT-6
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±16/±25V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Case: SuperSOT-6
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±16/±25V
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 103+ | 0.7 EUR |
| 118+ | 0.61 EUR |
| 252+ | 0.28 EUR |
| 265+ | 0.27 EUR |
| MC33164P-3G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92
Mounting: SMD
Operating temperature: -40...125°C
Case: TO92
Kind of package: bulk
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 30mA
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92
Mounting: SMD
Operating temperature: -40...125°C
Case: TO92
Kind of package: bulk
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 30mA
Produkt ist nicht verfügbar
| MC33164P-5G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92
Kind of package: bulk
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Operating temperature: -40...125°C
Case: TO92
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; TO92
Kind of package: bulk
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Operating temperature: -40...125°C
Case: TO92
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 124+ | 0.58 EUR |
| 143+ | 0.5 EUR |
| 152+ | 0.47 EUR |
| 155+ | 0.46 EUR |
| FJP5027OTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Kind of package: tube
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 3A
Type of transistor: NPN
Power dissipation: 50W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Kind of package: tube
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 3A
Type of transistor: NPN
Power dissipation: 50W
Polarisation: bipolar
Mounting: THT
Case: TO220AB
Frequency: 15MHz
Produkt ist nicht verfügbar
| CAV93C56VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| MMBTA63LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1330+ | 0.054 EUR |
| 1475+ | 0.048 EUR |
| 1905+ | 0.038 EUR |
| 2020+ | 0.035 EUR |
| FXL6408UMX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷3.6VDC; SMD; UMLP16; Ch: 8; 1.5uA
Type of integrated circuit: interface
Case: UMLP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 8
Quiescent current: 1.5µA
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...3.6V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷3.6VDC; SMD; UMLP16; Ch: 8; 1.5uA
Type of integrated circuit: interface
Case: UMLP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 8
Quiescent current: 1.5µA
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...3.6V DC
Produkt ist nicht verfügbar
| MURS480ET3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
Produkt ist nicht verfügbar
| NZT560A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| 196+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| FQPF45N15V2 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS86252 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 69W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PQFN8
On-state resistance: 96mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 69W
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PQFN8
On-state resistance: 96mΩ
Produkt ist nicht verfügbar
| FDMS86252L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2707 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.43 EUR |
| 36+ | 2.03 EUR |
| 47+ | 1.54 EUR |
| 50+ | 1.46 EUR |
| 500+ | 1.4 EUR |
| NSIC2020JBT3G |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SMB; 120V; 3W; 20mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SMB
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 120V
Power dissipation: 3W
Operating current: 20mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SMB; 120V; 3W; 20mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SMB
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 120V
Power dissipation: 3W
Operating current: 20mA
Produkt ist nicht verfügbar
| ES2A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Produkt ist nicht verfügbar