| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQP65N06 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 46.1A Pulsed drain current: 260A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MJF18004G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 35W Case: TO220FP Current gain: 6...34 Mounting: THT Kind of package: tube Frequency: 13MHz |
Produkt ist nicht verfügbar |
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1N5937BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA Mounting: THT Leakage current: 1µA Zener voltage: 33V Semiconductor structure: single diode Tolerance: ±5% Power dissipation: 3W Case: CASE59 Kind of package: reel; tape Type of diode: Zener |
Produkt ist nicht verfügbar |
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MMBZ5230BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA Mounting: SMD Leakage current: 5µA Zener current: 20mA Zener voltage: 4.7V Semiconductor structure: single diode Power dissipation: 0.225W Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Case: SOT23 |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5111T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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MUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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SMUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5111T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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SMUN5114DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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SMUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
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MMBZ5239BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA Type of diode: Zener Power dissipation: 0.225W Zener voltage: 9.1V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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BD244A | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 30 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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IRF530A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.9A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 588 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP511SN15T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.245V Output voltage: 1.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: NCP511 |
Produkt ist nicht verfügbar |
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| NCP511SN28T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.8...6V Manufacturer series: NCP511 |
Produkt ist nicht verfügbar |
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| FUSB252GEVB | ONSEMI |
Category: Microchip development kits Description: Dev.kit: evaluation |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6387G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSC2752OSTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: tube Collector-emitter voltage: 400V Current gain: 30...60 Collector current: 0.5A Pulsed collector current: 1A Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| NCP511SN30T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 3V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...6V Manufacturer series: NCP511 |
Produkt ist nicht verfügbar |
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| CAV24C16YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: TSSOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 900ns Clock frequency: 400kHz |
Produkt ist nicht verfügbar |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
Produkt ist nicht verfügbar |
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2N6292G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
Produkt ist nicht verfügbar |
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| FDB088N08 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 160W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Drain-source voltage: 75V Drain current: 60A On-state resistance: 8.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC |
Produkt ist nicht verfügbar |
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| NLSX0102FCT1G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 2bit; translator Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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| NLSX0102FCT2G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 2bit; translator Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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1N914TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NRVUS360VBT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Max. forward voltage: 1.25V Case: SMB Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry |
Produkt ist nicht verfügbar |
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| NRVBS360T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Case: SMC Kind of package: reel; tape Max. forward impulse current: 125A Application: automotive industry |
Produkt ist nicht verfügbar |
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| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: WDFN8 Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
Produkt ist nicht verfügbar |
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| NRVTS360ETFSWFTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: WDFN8 Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
Produkt ist nicht verfügbar |
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GBU4K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| BAR43S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 0.75A Power dissipation: 0.29W |
Produkt ist nicht verfügbar |
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| NCV8135AMT040TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator Type of integrated circuit: voltage regulator |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 On-state resistance: 0.55Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.18nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -0.4A |
Produkt ist nicht verfügbar |
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FDS8813NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DF02M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| 74AUP1G95FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Technology: CMOS Case: MicroPak6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of output: open drain |
Produkt ist nicht verfügbar |
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| 74AUP1G97FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Technology: CMOS Case: MicroPak6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NC7SV08FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C Technology: CMOS Case: uDFN6 Mounting: SMD Kind of package: reel; tape Manufacturer series: TinyLogic Operating temperature: -40...85°C Kind of gate: AND Family: NC Number of inputs: 1 Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NL27WZ86USG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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FJPF2145TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Frequency: 15MHz Collector-emitter voltage: 800V Current gain: 20...40 Collector current: 5A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| MM3Z20VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 20V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 45nA Max. forward voltage: 1V |
Produkt ist nicht verfügbar |
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MM3Z20VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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MM3Z20VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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SZMM3Z20VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 20V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Application: automotive industry |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
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| FDMS7680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56 Mounting: SMD Drain current: 28A On-state resistance: 10.1mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: Power56 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
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| 74LCX138BQX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Mounting: SMD Case: WQFN16 Manufacturer series: LCX Supply voltage: 2...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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74VHC139M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: SO16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD80 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP161BFCT280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: WLCSP4 Manufacturer series: NCP161 Operating temperature: -40...125°C Output voltage: 2.8V Output current: 0.45A Voltage drop: 0.29V Input voltage: 1.9...5.5V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
Produkt ist nicht verfügbar |
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| NCP156AAFCT105280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA Type of integrated circuit: voltage regulator Number of channels: 2 Mounting: SMD Case: WLCSP6 Manufacturer series: NCP156 Operating temperature: -40...125°C Output voltage: 1.05V; 2.8V Output current: 250...500mA Input voltage: 0.8...3.6V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% |
Produkt ist nicht verfügbar |
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| MMBTA14 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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| FDMC8554 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33 Mounting: SMD Kind of package: reel; tape Gate charge: 62nC Case: Power33 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 36A Polarisation: unipolar Power dissipation: 41W Type of transistor: N-MOSFET On-state resistance: 7.1mΩ Drain current: 16.5A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |
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 |
SS14 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape; 1.1W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A Power dissipation: 1.1W |
auf Bestellung 772 Stücke: Lieferzeit 14-21 Tag (e) |
|
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 +1 |
FDMA507PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET Case: MicroFET Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 35mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 42nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V |
Produkt ist nicht verfügbar |
| FQP65N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46.1A
Pulsed drain current: 260A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46.1A
Pulsed drain current: 260A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MJF18004G | |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 6...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 6...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Produkt ist nicht verfügbar
| 1N5937BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA
Mounting: THT
Leakage current: 1µA
Zener voltage: 33V
Semiconductor structure: single diode
Tolerance: ±5%
Power dissipation: 3W
Case: CASE59
Kind of package: reel; tape
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA
Mounting: THT
Leakage current: 1µA
Zener voltage: 33V
Semiconductor structure: single diode
Tolerance: ±5%
Power dissipation: 3W
Case: CASE59
Kind of package: reel; tape
Type of diode: Zener
Produkt ist nicht verfügbar
| MMBZ5230BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Leakage current: 5µA
Zener current: 20mA
Zener voltage: 4.7V
Semiconductor structure: single diode
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Leakage current: 5µA
Zener current: 20mA
Zener voltage: 4.7V
Semiconductor structure: single diode
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: SOT23
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)| MUN5111DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 575+ | 0.12 EUR |
| 1155+ | 0.062 EUR |
| 1610+ | 0.044 EUR |
| 1705+ | 0.042 EUR |
| MUN5111T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| MUN5115DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| MUN5335DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| SMUN5111DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 320+ | 0.23 EUR |
| 360+ | 0.2 EUR |
| 405+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 480+ | 0.15 EUR |
| SMUN5111T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| SMUN5114DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| SMUN5115DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
| MMBZ5239BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1375+ | 0.053 EUR |
| 2075+ | 0.034 EUR |
| 2300+ | 0.031 EUR |
| 2975+ | 0.024 EUR |
| BD244A |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
| IRF530A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| GBU8K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 588 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.96 EUR |
| 41+ | 1.76 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| NCP511SN15T1G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
Produkt ist nicht verfügbar
| NCP511SN28T1G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
Produkt ist nicht verfügbar
| FUSB252GEVB |
|
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 157.66 EUR |
| 4+ | 136.22 EUR |
| 2N6387G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.93 EUR |
| KSC2752OSTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 30...60
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 400V
Current gain: 30...60
Collector current: 0.5A
Pulsed collector current: 1A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Produkt ist nicht verfügbar
| NCP511SN30T1G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
Produkt ist nicht verfügbar
| CAV24C16YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 900ns
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 900ns
Clock frequency: 400kHz
Produkt ist nicht verfügbar
| BZX84C47LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| BZX84C47LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
| 2N6292G | |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Produkt ist nicht verfügbar
| FDB088N08 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Produkt ist nicht verfügbar
| NLSX0102FCT1G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| NLSX0102FCT2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| 1N914TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NRVUS360VBT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Produkt ist nicht verfügbar
| NRVBS360T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 125A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 125A
Application: automotive industry
Produkt ist nicht verfügbar
| NRVTS360ETFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Produkt ist nicht verfügbar
| NRVTS360ETFSWFTAG |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Produkt ist nicht verfügbar
| GBU4K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| BAR43S |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.75A
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.75A
Power dissipation: 0.29W
Produkt ist nicht verfügbar
| NCV8135AMT040TBG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 158+ | 0.45 EUR |
| 1100+ | 0.44 EUR |
| NTR0202PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Produkt ist nicht verfügbar
| FDS8813NZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DF02M |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| 74AUP1G95FHX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of output: open drain
Produkt ist nicht verfügbar
| 74AUP1G97FHX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Technology: CMOS
Case: MicroPak6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| NC7SV08FHX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of gate: AND
Family: NC
Number of inputs: 1
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 1; CMOS; SMD; uDFN6; TinyLogic; -40÷85°C
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of gate: AND
Family: NC
Number of inputs: 1
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| NL27WZ86USG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
| FJPF2145TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Collector-emitter voltage: 800V
Current gain: 20...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Produkt ist nicht verfügbar
| MM3Z20VC |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 20V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 45nA
Max. forward voltage: 1V
Produkt ist nicht verfügbar
| MM3Z20VST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| MM3Z20VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| SZMM3Z20VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Application: automotive industry
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.19 EUR |
| 6N137M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
| FDMS7680 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Mounting: SMD
Drain current: 28A
On-state resistance: 10.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: Power56
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Mounting: SMD
Drain current: 28A
On-state resistance: 10.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: Power56
Drain-source voltage: 30V
Produkt ist nicht verfügbar
| 74LCX138BQX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: WQFN16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; WQFN16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: WQFN16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Produkt ist nicht verfügbar
| 74VHC139M |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 91+ | 0.79 EUR |
| 153+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| LL4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1117+ | 0.064 EUR |
| 2674+ | 0.027 EUR |
| 2880+ | 0.024 EUR |
| NCP161BFCT280T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: WLCSP4
Manufacturer series: NCP161
Operating temperature: -40...125°C
Output voltage: 2.8V
Output current: 0.45A
Voltage drop: 0.29V
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: WLCSP4
Manufacturer series: NCP161
Operating temperature: -40...125°C
Output voltage: 2.8V
Output current: 0.45A
Voltage drop: 0.29V
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
| NCP156AAFCT105280T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Mounting: SMD
Case: WLCSP6
Manufacturer series: NCP156
Operating temperature: -40...125°C
Output voltage: 1.05V; 2.8V
Output current: 250...500mA
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V,2.8V; 250÷500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Mounting: SMD
Case: WLCSP6
Manufacturer series: NCP156
Operating temperature: -40...125°C
Output voltage: 1.05V; 2.8V
Output current: 250...500mA
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Produkt ist nicht verfügbar
| MMBTA14 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
| FDMC8554 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16.5A; Idm: 36A; 41W; Power33
Mounting: SMD
Kind of package: reel; tape
Gate charge: 62nC
Case: Power33
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 36A
Polarisation: unipolar
Power dissipation: 41W
Type of transistor: N-MOSFET
On-state resistance: 7.1mΩ
Drain current: 16.5A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
| SS14 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape; 1.1W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMA; reel,tape; 1.1W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Power dissipation: 1.1W
auf Bestellung 772 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 447+ | 0.16 EUR |
| 538+ | 0.13 EUR |
| 698+ | 0.1 EUR |
| 738+ | 0.097 EUR |
| FDMA507PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Produkt ist nicht verfügbar