![FDMC8015L FDMC8015L](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5972/488%7EMKT-MLP08T%7EFDMC%7E8.jpg)
FDMC8015L onsemi
![fdmc8015l-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 40V 7A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8015L onsemi
Description: MOSFET N-CH 40V 7A/18A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 2.3W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V.
Weitere Produktangebote FDMC8015L nach Preis ab 0.47 EUR bis 1.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDMC8015L | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 2858 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
FDMC8015L | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 2858 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
FDMC8015L | Hersteller : onsemi / Fairchild |
![]() |
auf Bestellung 4502 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
FDMC8015L | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V |
auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
FDMC8015L |
![]() |
auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
![]() |
FDMC8015L | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
FDMC8015L | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
FDMC8015L | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Power dissipation: 24W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 39mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDMC8015L | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Power dissipation: 24W Case: WDFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 39mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |