![FDMS86252 FDMS86252](https://static6.arrow.com/aropdfconversion/arrowimages/e1d472f800a341c9595c5ee13662fb42124e30d5/qfn-8.jpg)
FDMS86252 ON Semiconductor
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
99+ | 1.59 EUR |
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Technische Details FDMS86252 ON Semiconductor
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V.
Weitere Produktangebote FDMS86252 nach Preis ab 1.25 EUR bis 3.71 EUR
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FDMS86252 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
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auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252 | Hersteller : onsemi / Fairchild |
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auf Bestellung 10073 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V |
auf Bestellung 5027 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86252 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMS86252 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMS86252 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 69W Polarisation: unipolar Drain current: 16A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PQFN8 On-state resistance: 96mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86252 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 69W Polarisation: unipolar Drain current: 16A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PQFN8 On-state resistance: 96mΩ |
Produkt ist nicht verfügbar |