| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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|---|---|---|---|---|---|---|---|---|---|
| FGHL50T65MQD | ONSEMI |
 Category: THT IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGHL50T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGHL50T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGB7N60UNDF | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
auf Bestellung 439 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP43TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 200V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
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FQA36P15 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MOC3162M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3162M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3162M |
Produkt ist nicht verfügbar |
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| FOD4108SD | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver Max. off-state voltage: 6V Case: PDIP6 Mounting: SMD Manufacturer series: FOD4108 Turn-on time: 60µs Turn-off time: 52µs Output voltage: 800V Number of channels: 1 Kind of output: triac; zero voltage crossing driver Insulation voltage: 5kV Trigger current: 2mA Slew rate: 10V/μs Type of optocoupler: optotriac |
Produkt ist nicht verfügbar |
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| FOD4108SDV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver Max. off-state voltage: 6V Case: PDIP6 Mounting: SMD Manufacturer series: FOD4108 Turn-on time: 60µs Turn-off time: 52µs Output voltage: 800V Number of channels: 1 Kind of output: triac; zero voltage crossing driver Insulation voltage: 5kV Conform to the norm: VDE Trigger current: 2mA Slew rate: 10V/μs Type of optocoupler: optotriac |
Produkt ist nicht verfügbar |
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| FOD410SD | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver Max. off-state voltage: 6V Case: PDIP6 Mounting: SMD Manufacturer series: FOD410 Turn-on time: 60µs Turn-off time: 52µs Output voltage: 600V Number of channels: 1 Kind of output: triac; zero voltage crossing driver Insulation voltage: 5kV Trigger current: 2mA Slew rate: 10V/μs Type of optocoupler: optotriac |
Produkt ist nicht verfügbar |
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| NCV5501DT50RKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4.9% Number of channels: 1 Application: automotive industry Input voltage: 6...16V Manufacturer series: NCV5501 |
Produkt ist nicht verfügbar |
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FJV992FMTF | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23 Frequency: 50MHz Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 120V Current gain: 300...600 Collector current: 50mA Type of transistor: PNP Power dissipation: 0.3W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| NRVS1JHE | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 782ns; SOD323HE; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 782ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 1.1V Max. forward impulse current: 20A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| TL431CDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
Produkt ist nicht verfügbar |
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| TL431CLPRAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
Produkt ist nicht verfügbar |
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| TL431CLPRPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source Type of integrated circuit: voltage reference source |
Produkt ist nicht verfügbar |
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NC7SZ00P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
Produkt ist nicht verfügbar |
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| FDMC8097AC | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W Power dissipation: 1.9W Case: Power33 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150/-150V Drain current: 2.4/-0.9A On-state resistance: 2171/306mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Gate charge: 4/6.2nC Kind of channel: enhanced Gate-source voltage: ±20V; ±25V |
Produkt ist nicht verfügbar |
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SM12T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 13.3V; 12A; 300W; double,common anode; SOT23-3 Type of diode: TVS array Breakdown voltage: 13.3V Max. forward impulse current: 12A Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23-3 Max. off-state voltage: 12V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
| FGHL50T65MQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGHL50T65MQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGHL50T65SQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGB7N60UNDF |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 439 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.37 EUR |
| 250+ | 2.06 EUR |
| KSP43TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
| FQA36P15 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MOC3162M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3162M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3162M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3162M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3162M
Produkt ist nicht verfügbar
| FOD4108SD |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Produkt ist nicht verfügbar
| FOD4108SDV |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Conform to the norm: VDE
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD4108
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Conform to the norm: VDE
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Produkt ist nicht verfügbar
| FOD410SD |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD410
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 600V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Max. off-state voltage: 6V
Case: PDIP6
Mounting: SMD
Manufacturer series: FOD410
Turn-on time: 60µs
Turn-off time: 52µs
Output voltage: 600V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Trigger current: 2mA
Slew rate: 10V/μs
Type of optocoupler: optotriac
Produkt ist nicht verfügbar
| NCV5501DT50RKG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 6...16V
Manufacturer series: NCV5501
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; ±4.9%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4.9%
Number of channels: 1
Application: automotive industry
Input voltage: 6...16V
Manufacturer series: NCV5501
Produkt ist nicht verfügbar
| FJV992FMTF |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23
Frequency: 50MHz
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 120V
Current gain: 300...600
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23
Frequency: 50MHz
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 120V
Current gain: 300...600
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Produkt ist nicht verfügbar
| NRVS1JHE |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 782ns; SOD323HE; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 782ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 1.1V
Max. forward impulse current: 20A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 782ns; SOD323HE; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 782ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 1.1V
Max. forward impulse current: 20A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| TL431CDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
| TL431CLPRAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
| TL431CLPRPG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Produkt ist nicht verfügbar
| NC7SZ00P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Produkt ist nicht verfügbar
| FDMC8097AC |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Power dissipation: 1.9W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
On-state resistance: 2171/306mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 4/6.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V; ±25V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Power dissipation: 1.9W
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
On-state resistance: 2171/306mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Gate charge: 4/6.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V; ±25V
Produkt ist nicht verfügbar
| SM12T1G |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 12A; 300W; double,common anode; SOT23-3
Type of diode: TVS array
Breakdown voltage: 13.3V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.3V; 12A; 300W; double,common anode; SOT23-3
Type of diode: TVS array
Breakdown voltage: 13.3V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 12V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Produkt ist nicht verfügbar