![FQA36P15 FQA36P15](https://www.mouser.com/images/fairchildsemiconductor/lrg/TO_3PN_3_DSL.jpg)
auf Bestellung 3420 Stücke:
Lieferzeit 677-681 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.48 EUR |
10+ | 5.44 EUR |
30+ | 5.14 EUR |
120+ | 4.4 EUR |
270+ | 4.15 EUR |
510+ | 3.91 EUR |
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Technische Details FQA36P15 onsemi / Fairchild
Description: MOSFET P-CH 150V 36A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V.
Weitere Produktangebote FQA36P15
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FQA36P15 Produktcode: 52210 |
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FQA36P15 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQA36P15 | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |