| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NL17SZ125DFT2G | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC |
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NL17SZ125DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: TSOP5 Supply voltage: 1.65...5.5V DC |
Produkt ist nicht verfügbar |
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| NL17SZ125XV5T2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 1 Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC |
Produkt ist nicht verfügbar |
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| NL27WZ125USG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: 2 Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC |
Produkt ist nicht verfügbar |
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1N5370BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA Mounting: THT Kind of package: bulk Semiconductor structure: single diode Zener voltage: 56V Leakage current: 0.5µA Power dissipation: 5W Type of diode: Zener Case: CASE017AA Tolerance: ±5% |
Produkt ist nicht verfügbar |
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| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: WDFN6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 75mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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HUF75545P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 73A Power dissipation: 270W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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FDD10N20LZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQP10N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 6A Pulsed drain current: 38A Power dissipation: 72W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| M74HCT4051ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Case: TSSOP16 Technology: CMOS; TTL Mounting: SMD Kind of package: reel; tape Manufacturer series: HCT Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Family: HCT Operating temperature: -55...125°C Number of inputs: 11 Supply voltage: 2...6V DC; 2...12V DC Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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| M74HCT4053ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 2...6V DC; 2...12V DC Family: HCT Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| M74HCT4094ADTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; register; shift and store Mounting: SMD Case: TSSOP16 Number of channels: 1 Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS; TTL Manufacturer series: HCT Number of inputs: 4 Family: HCT Supply voltage: 4...5.5V DC Kind of output: 3-state |
Produkt ist nicht verfügbar |
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FCPF20N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33171DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape |
auf Bestellung 1949 Stücke: Lieferzeit 14-21 Tag (e) |
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LM285Z-1.2G | ONSEMI |
 Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: bulk Maximum output current: 20mA Reference voltage: 1.235V Tolerance: ±1% |
auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
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LM285Z-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Mounting: THT Case: TO92 Operating temperature: -40...85°C Tolerance: ±1% Maximum output current: 20mA Kind of package: reel; tape Type of integrated circuit: voltage reference source Reference voltage: 1.235V |
auf Bestellung 984 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74ACT574DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Kind of output: 3-state |
Produkt ist nicht verfügbar |
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MC74ACT574DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20-W Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Kind of output: 3-state |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT574DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Manufacturer series: ACT Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Kind of output: 3-state |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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| NRVTSM245ET1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: POWERMITE Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
Produkt ist nicht verfügbar |
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| NRVTSM245ET3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: POWERMITE Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
Produkt ist nicht verfügbar |
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NDC7003P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTGD1100LT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6 Power dissipation: 0.43W Case: TSOP6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 8V Drain current: 2.4A On-state resistance: 40mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A |
Produkt ist nicht verfügbar |
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| NTGD4167CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 1.9/-1.4A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90/170mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHC5513T1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-3A Pulsed drain current: 12A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 115/240mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHD3100CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3.9/-4.4A Pulsed drain current: 12A Power dissipation: 3.1W Case: ChipFET Gate-source voltage: ±12/±8V On-state resistance: 115/110mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHD3102CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 5.5/-4.2A Pulsed drain current: 16A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHD4502NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2/2.9A Pulsed drain current: 16...12.6A Power dissipation: 0.6W Case: ChipFET Gate-source voltage: ±8/±8V On-state resistance: 37/83mΩ Mounting: SMD Gate charge: 5.8/6.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHD4508NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.59W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTJD4105CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.63/-0.755A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 445/900mΩ Mounting: SMD Gate charge: 3/4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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NTJD4105CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.46/-0.558A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 375/300mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTJD4401NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTLJD3119CTBG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 2.8/-2.4A Power dissipation: 1.5W Case: WDFN6 Gate-source voltage: ±8V On-state resistance: 65/100mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTUD3169CZT5G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.16/-0.14A Power dissipation: 0.125W Case: SOT963 Gate-source voltage: ±8V On-state resistance: 1.5/5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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NTZD3152PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTD600N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 60W On-state resistance: 0.55Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 21A Drain-source voltage: 800V Drain current: 5A |
Produkt ist nicht verfügbar |
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1N4741ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC390ADG | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -55...125°C |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC390ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| MC74HC390ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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BAS116LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS116LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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TIP121G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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TIP126TU | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FSBB20CH60C | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 3 Case: SPMMC-027 Output current: 20A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V Frequency: 20kHz Power dissipation: 62W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
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LM2575T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE4153NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.66A Power dissipation: 0.3W Case: SC89 Gate-source voltage: ±6V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1015 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD360N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 28A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 296mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1SMB5942BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 51V; 7.3mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 51V Zener current: 7.3mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Zener resistance: 70Ω |
Produkt ist nicht verfügbar |
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DTC114EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2/0.3W Case: SOT416 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2725 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Kind of package: reel; tape Drain-source voltage: 150V Drain current: 2.3A On-state resistance: 273mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD Case: SuperSOT-6 |
Produkt ist nicht verfügbar |
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| FDMC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8 Kind of package: reel; tape Drain-source voltage: 150V Drain current: 9.4A On-state resistance: 254mΩ Type of transistor: N-MOSFET Power dissipation: 26W Polarisation: unipolar Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |
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BAS20HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward impulse current: 625mA Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 3260 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS20LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape |
auf Bestellung 4325 Stücke: Lieferzeit 14-21 Tag (e) |
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| NLAS2066USG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; 2uA Type of integrated circuit: analog switch Number of channels: 2 Kind of output: SPST-NO x2 Mounting: SMD Case: US8 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Quiescent current: 2µA |
Produkt ist nicht verfügbar |
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SBAS20HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MBR230LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.37V Case: SOD123F Kind of package: reel; tape |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| NL17SZ125DFT2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
| NL17SZ125DTT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: TSOP5
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; TSOP5; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: TSOP5
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
| NL17SZ125XV5T2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
| NL27WZ125USG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; US8; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
| 1N5370BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Zener voltage: 56V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: CASE017AA
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Zener voltage: 56V
Leakage current: 0.5µA
Power dissipation: 5W
Type of diode: Zener
Case: CASE017AA
Tolerance: ±5%
Produkt ist nicht verfügbar
| FDMA1024NZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| HUF75545P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 270W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.09 EUR |
| 27+ | 2.72 EUR |
| 31+ | 2.37 EUR |
| 32+ | 2.25 EUR |
| FQD10N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDD10N20LZTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQP10N20C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| M74HCT4051ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Case: TSSOP16
Technology: CMOS; TTL
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 11
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Case: TSSOP16
Technology: CMOS; TTL
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 11
Supply voltage: 2...6V DC; 2...12V DC
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| M74HCT4053ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| M74HCT4094ADTR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; register; shift and store
Mounting: SMD
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4...5.5V DC
Kind of output: 3-state
Category: Shift registers
Description: IC: digital; 3-state,8bit,shift and store,register; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; register; shift and store
Mounting: SMD
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS; TTL
Manufacturer series: HCT
Number of inputs: 4
Family: HCT
Supply voltage: 4...5.5V DC
Kind of output: 3-state
Produkt ist nicht verfügbar
| FCPF20N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.65 EUR |
| 12+ | 5.98 EUR |
| 16+ | 4.58 EUR |
| 17+ | 4.33 EUR |
| MC33171DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
auf Bestellung 1949 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| 98+ | 0.73 EUR |
| 115+ | 0.62 EUR |
| 129+ | 0.56 EUR |
| 136+ | 0.53 EUR |
| LM285Z-1.2G | |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 1.235V
Tolerance: ±1%
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 1.235V
Tolerance: ±1%
auf Bestellung 1468 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 131+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| LM285Z-1.2RAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Tolerance: ±1%
Maximum output current: 20mA
Kind of package: reel; tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Tolerance: ±1%
Maximum output current: 20mA
Kind of package: reel; tape
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 105+ | 0.69 EUR |
| 111+ | 0.65 EUR |
| 142+ | 0.5 EUR |
| 151+ | 0.48 EUR |
| MC74ACT574DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; TTL; ACT; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Kind of output: 3-state
Produkt ist nicht verfügbar
| MC74ACT574DWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 72+ | 1 EUR |
| 84+ | 0.86 EUR |
| MC74ACT574DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Manufacturer series: ACT
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Kind of output: 3-state
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.66 EUR |
| 61+ | 1.18 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| NRVTSM245ET1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Produkt ist nicht verfügbar
| NRVTSM245ET3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; POWERMITE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: POWERMITE
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Produkt ist nicht verfügbar
| NDC7003P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTGD1100LT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Power dissipation: 0.43W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 8V
Drain current: 2.4A
On-state resistance: 40mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Power dissipation: 0.43W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 8V
Drain current: 2.4A
On-state resistance: 40mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Produkt ist nicht verfügbar
| NTGD4167CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 1.9/-1.4A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90/170mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHC5513T1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-3A
Pulsed drain current: 12A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 115/240mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHD3100CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3.9/-4.4A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: ChipFET
Gate-source voltage: ±12/±8V
On-state resistance: 115/110mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 74+ | 0.97 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| 500+ | 0.65 EUR |
| NTHD3102CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 5.5/-4.2A
Pulsed drain current: 16A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHD4502NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2/2.9A; Idm: 16÷12.6A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2/2.9A
Pulsed drain current: 16...12.6A
Power dissipation: 0.6W
Case: ChipFET
Gate-source voltage: ±8/±8V
On-state resistance: 37/83mΩ
Mounting: SMD
Gate charge: 5.8/6.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHD4508NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.59W
Case: ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTJD4105CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.63/-0.755A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 445/900mΩ
Mounting: SMD
Gate charge: 3/4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| NTJD4105CT2G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-8V
Drain current: 0.46/-0.558A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V; ±12V
On-state resistance: 375/300mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTJD4401NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.27W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 445mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 183+ | 0.39 EUR |
| 230+ | 0.31 EUR |
| 334+ | 0.21 EUR |
| 496+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| NTJD5121NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.295A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 105+ | 0.69 EUR |
| NTLJD3119CTBG |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Power dissipation: 1.5W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 65/100mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Power dissipation: 1.5W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 65/100mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTUD3169CZT5G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| NTZD3152PT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 257+ | 0.28 EUR |
| 360+ | 0.2 EUR |
| 473+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| NTD360N80S3Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTD600N80S3Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
Produkt ist nicht verfügbar
| 1N4741ATR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| MC74HC390ADG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 78+ | 0.92 EUR |
| 108+ | 0.66 EUR |
| 115+ | 0.63 EUR |
| MC74HC390ADR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| MC74HC390ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; 2÷6VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| BAS116LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 205+ | 0.34 EUR |
| SBAS116LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| TIP121G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
| TIP126TU |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| FSBB20CH60C |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
| LM2575T-ADJG | |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.79 EUR |
| 29+ | 2.52 EUR |
| 37+ | 1.94 EUR |
| 40+ | 1.83 EUR |
| NTE4153NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1015 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 630+ | 0.11 EUR |
| NTD360N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 28A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 296mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 28A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 296mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1SMB5942BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; 7.3mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Zener current: 7.3mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener resistance: 70Ω
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; 7.3mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Zener current: 7.3mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener resistance: 70Ω
Produkt ist nicht verfügbar
| DTC114EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1075+ | 0.067 EUR |
| 2000+ | 0.036 EUR |
| 2275+ | 0.032 EUR |
| 2600+ | 0.028 EUR |
| 2725+ | 0.026 EUR |
| FDC86244 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 2.3A
On-state resistance: 273mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Case: SuperSOT-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 2.3A
On-state resistance: 273mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Case: SuperSOT-6
Produkt ist nicht verfügbar
| FDMC86244 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
Case: WDFN8
Produkt ist nicht verfügbar
| BAS20HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3260 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 455+ | 0.16 EUR |
| 618+ | 0.12 EUR |
| 863+ | 0.083 EUR |
| 1316+ | 0.054 EUR |
| 1539+ | 0.046 EUR |
| 1725+ | 0.041 EUR |
| 3013+ | 0.024 EUR |
| 3185+ | 0.022 EUR |
| BAS20LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.25V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 4325 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 695+ | 0.1 EUR |
| 881+ | 0.081 EUR |
| 1425+ | 0.05 EUR |
| 2404+ | 0.03 EUR |
| 3312+ | 0.022 EUR |
| 3497+ | 0.02 EUR |
| NLAS2066USG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; 2uA
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPST-NO x2
Mounting: SMD
Case: US8
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Quiescent current: 2µA
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; US8; 1.65÷5.5VDC; reel,tape; 2uA
Type of integrated circuit: analog switch
Number of channels: 2
Kind of output: SPST-NO x2
Mounting: SMD
Case: US8
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Quiescent current: 2µA
Produkt ist nicht verfügbar
| SBAS20HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| MBR230LSFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD123F
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Case: SOD123F
Kind of package: reel; tape
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 330+ | 0.22 EUR |
| 365+ | 0.2 EUR |
| 415+ | 0.17 EUR |
| 480+ | 0.15 EUR |
| 510+ | 0.14 EUR |