| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FDB110N15A | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 65A Pulsed drain current: 369A Power dissipation: 234W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
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SMMBTA06LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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SMMUN2213LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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SMMUN2213LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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FDS6375 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8A On-state resistance: 39mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 36nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SO8 |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC251ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC251ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 1 Supply voltage: 2...6V DC Mounting: SMD Case: SO16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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| MC74HC251ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC |
Produkt ist nicht verfügbar |
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MC74HC259ADR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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| MC74HC259ADTR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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1N5352BG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 15V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
Produkt ist nicht verfügbar |
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1N5352BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 15V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 3694 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA05LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA13LT1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA14LT1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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MMBTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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NST45010MW6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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D45VH10G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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| MOCD213R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA Insulation voltage: 2.5kV Mounting: SMD Number of channels: 2 Turn-on time: 3µs Turn-off time: 2.8µs Kind of output: transistor CTR@If: 100%@10mA Case: SO8 Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
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MOCD213M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA Insulation voltage: 2.5kV Mounting: SMD Number of channels: 2 Turn-on time: 3µs Turn-off time: 2.8µs Kind of output: transistor CTR@If: 100%@10mA Case: SO8 Type of optocoupler: optocoupler |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC144EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
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SS23 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMB Kind of package: reel; tape Max. forward impulse current: 50A |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH22N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 66A Power dissipation: 205W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH072N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH072N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH072N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.8A Pulsed drain current: -5A Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NCP2823AFCT2G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9 Kind of package: reel; tape Type of integrated circuit: audio amplifier Output power: 1.5W Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Amplifier class: D Mounting: SMD Case: WLCSP9 Supply voltage: 2.5...5.5V DC Impedance: 8Ω |
Produkt ist nicht verfügbar |
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1N5353BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 16V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Power dissipation: 0.9W Kind of package: reel; tape On-state resistance: 9Ω Polarisation: unipolar Gate charge: 0.7nC Technology: PowerTrench® Drain current: 0.22A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±0.5V; ±8V Type of transistor: N-MOSFET x2 |
auf Bestellung 542 Stücke: Lieferzeit 14-21 Tag (e) |
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| FXMAR2104UMX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Frequency: 26MHz Operating temperature: -40...85°C Number of channels: 4 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Case: MLP12 Mounting: SMD Kind of package: reel; tape Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
Produkt ist nicht verfügbar |
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FDMC8462 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: PQFN8 Drain-source voltage: 40V Drain current: 20A On-state resistance: 9.3mΩ |
Produkt ist nicht verfügbar |
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FDN304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Gate charge: 20nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar |
auf Bestellung 3540 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV301N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 6322 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6990A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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NCV8403ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223 Supply voltage: 42V DC Kind of package: reel; tape On-state resistance: 123mΩ Output current: 15A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of integrated circuit: low-side Mounting: SMD Case: SOT223 |
Produkt ist nicht verfügbar |
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1N5369BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 3846 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1413BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of package: reel; tape |
auf Bestellung 1691 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF6N80T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.1A Pulsed drain current: 13.2A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BC559BTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92 Mounting: THT Collector-emitter voltage: 30V Current gain: 110...800 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: Ammo Pack Case: TO92 Frequency: 150MHz |
auf Bestellung 1314 Stücke: Lieferzeit 14-21 Tag (e) |
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BC559CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92 Mounting: THT Collector-emitter voltage: 30V Current gain: 420...800 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: Ammo Pack Case: TO92 Frequency: 150MHz |
Produkt ist nicht verfügbar |
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MC33272ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 24MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 10V/μs Operating temperature: -40...85°C Input offset voltage: 0.1mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Integrated circuit features: rail-to-rail Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMC6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 15mΩ Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |
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1N5344BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5363BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 668 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5375BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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1N5375BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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MBR1060G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
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BCP56T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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SBCP56T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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MC74HC132ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Kind of input: with Schmitt trigger Delay time: 25ns Family: HC |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC132ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 25ns Family: HC |
Produkt ist nicht verfügbar |
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MC74HC132ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 25ns Family: HC |
Produkt ist nicht verfügbar |
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MM74HC132M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of input: with Schmitt trigger Family: HC |
auf Bestellung 346 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC132MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Delay time: 12ns Family: HC |
Produkt ist nicht verfügbar |
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| SS32 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape; 2.27W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.5V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
Produkt ist nicht verfügbar |
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MMBF4391LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 0.225W; SOT23; 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 30Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 1549 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Kind of package: reel; tape Manufacturer series: MC33275 Output voltage: 3.3V Output current: 0.8A Voltage drop: 1.1V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 0...20V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: SOT223 Tolerance: ±1% |
auf Bestellung 2162 Stücke: Lieferzeit 14-21 Tag (e) |
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NSI50010YT1G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOD123; 50V; 460mW; 10mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 50V Power dissipation: 0.46W Operating current: 10mA |
auf Bestellung 596 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB110N15A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SMMBTA06LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 363+ | 0.2 EUR |
| 503+ | 0.14 EUR |
| 572+ | 0.13 EUR |
| 884+ | 0.081 EUR |
| 935+ | 0.077 EUR |
| SMMBTA06LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| SMMUN2213LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| SMMUN2213LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| FDS6375 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 82+ | 0.88 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| MC74HC251ADG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.93 EUR |
| 82+ | 0.88 EUR |
| 87+ | 0.83 EUR |
| 97+ | 0.74 EUR |
| 175+ | 0.41 EUR |
| 185+ | 0.39 EUR |
| MC74HC251ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; SMD; SO16; HC; 2÷6VDC; tube; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 160µA
Produkt ist nicht verfügbar
| MC74HC251ADTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Produkt ist nicht verfügbar
| MC74HC259ADR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| MC74HC259ADTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Latches
Description: IC: digital; 8bit,decoder,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| 1N5352BG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; bulk; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Produkt ist nicht verfügbar
| 1N5352BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 3694 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 123+ | 0.58 EUR |
| 198+ | 0.36 EUR |
| 281+ | 0.26 EUR |
| 297+ | 0.24 EUR |
| MMBTA05LT1G | |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 400+ | 0.17 EUR |
| MMBTA13LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| MMBTA14LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
| MMBTA28 | |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
| NST45010MW6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
| D45VH10G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
| MOCD213R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
| MOCD213M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 100%@10mA
Insulation voltage: 2.5kV
Mounting: SMD
Number of channels: 2
Turn-on time: 3µs
Turn-off time: 2.8µs
Kind of output: transistor
CTR@If: 100%@10mA
Case: SO8
Type of optocoupler: optocoupler
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 150+ | 0.61 EUR |
| DTC144EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2927 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1900+ | 0.038 EUR |
| 2150+ | 0.033 EUR |
| 2450+ | 0.029 EUR |
| 2625+ | 0.027 EUR |
| 2775+ | 0.026 EUR |
| SS23 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 50A
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 235+ | 0.31 EUR |
| 260+ | 0.28 EUR |
| 340+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| FCH22N60N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH072N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH072N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH072N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTS4173PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NCP2823AFCT2G |
|
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Output power: 1.5W
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Amplifier class: D
Mounting: SMD
Case: WLCSP9
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1.5W; 2.5÷5.5VDC; Amp.class: D; WLCSP9
Kind of package: reel; tape
Type of integrated circuit: audio amplifier
Output power: 1.5W
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Amplifier class: D
Mounting: SMD
Case: WLCSP9
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
Produkt ist nicht verfügbar
| 1N5353BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 241+ | 0.3 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| FDC6301N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 9Ω
Polarisation: unipolar
Gate charge: 0.7nC
Technology: PowerTrench®
Drain current: 0.22A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±0.5V; ±8V
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 9Ω
Polarisation: unipolar
Gate charge: 0.7nC
Technology: PowerTrench®
Drain current: 0.22A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±0.5V; ±8V
Type of transistor: N-MOSFET x2
auf Bestellung 542 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 172+ | 0.42 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| FXMAR2104UMX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Frequency: 26MHz
Operating temperature: -40...85°C
Number of channels: 4
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Case: MLP12
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Frequency: 26MHz
Operating temperature: -40...85°C
Number of channels: 4
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Case: MLP12
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
| FDMC8462 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 9.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 43nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PQFN8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 9.3mΩ
Produkt ist nicht verfügbar
| FDN304P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 3540 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 154+ | 0.46 EUR |
| 219+ | 0.33 EUR |
| 232+ | 0.31 EUR |
| FDV301N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 6322 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 881+ | 0.081 EUR |
| 1044+ | 0.068 EUR |
| 1158+ | 0.062 EUR |
| 1163+ | 0.061 EUR |
| 1226+ | 0.058 EUR |
| 3000+ | 0.057 EUR |
| FDS6990A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| NCV8403ASTT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
Kind of package: reel; tape
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
Kind of package: reel; tape
On-state resistance: 123mΩ
Output current: 15A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
Produkt ist nicht verfügbar
| 1N5369BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 3846 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 193+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| 268+ | 0.27 EUR |
| 285+ | 0.25 EUR |
| MC1413BDR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: reel; tape
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 95+ | 0.75 EUR |
| 104+ | 0.69 EUR |
| 131+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| FQPF6N80T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BC559BTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 110...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 110...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
auf Bestellung 1314 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 285+ | 0.25 EUR |
| 619+ | 0.12 EUR |
| 1150+ | 0.062 EUR |
| 1217+ | 0.059 EUR |
| BC559CTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.5W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
Frequency: 150MHz
Produkt ist nicht verfügbar
| MC33272ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; SO8; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FDMC6679AZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
Produkt ist nicht verfügbar
| 1N5344BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.44 EUR |
| 218+ | 0.33 EUR |
| 284+ | 0.25 EUR |
| 300+ | 0.24 EUR |
| 1N5363BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 166+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 304+ | 0.24 EUR |
| 321+ | 0.22 EUR |
| 1N5375BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| 1N5375BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| MBR1060G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
| BCP56T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 0.53 EUR |
| SBCP56T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
| MC74HC132ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 85+ | 0.84 EUR |
| 93+ | 0.77 EUR |
| 113+ | 0.64 EUR |
| 119+ | 0.6 EUR |
| 125+ | 0.57 EUR |
| MC74HC132ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
Produkt ist nicht verfügbar
| MC74HC132ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 25ns
Family: HC
Produkt ist nicht verfügbar
| MM74HC132M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: HC
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 106+ | 0.68 EUR |
| 199+ | 0.36 EUR |
| 211+ | 0.34 EUR |
| 275+ | 0.33 EUR |
| MM74HC132MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 12ns
Family: HC
Produkt ist nicht verfügbar
| SS32 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
| MMBF4391LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 0.225W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 0.225W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 252+ | 0.28 EUR |
| 365+ | 0.2 EUR |
| 397+ | 0.18 EUR |
| 481+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| MC33275ST-3.3T3G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Kind of package: reel; tape
Manufacturer series: MC33275
Output voltage: 3.3V
Output current: 0.8A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0...20V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±1%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Kind of package: reel; tape
Manufacturer series: MC33275
Output voltage: 3.3V
Output current: 0.8A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0...20V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±1%
auf Bestellung 2162 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 84+ | 0.86 EUR |
| 198+ | 0.36 EUR |
| 210+ | 0.34 EUR |
| NSI50010YT1G |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50V; 460mW; 10mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 50V
Power dissipation: 0.46W
Operating current: 10mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 50V; 460mW; 10mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 50V
Power dissipation: 0.46W
Operating current: 10mA
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 182+ | 0.39 EUR |
| 214+ | 0.33 EUR |
| 222+ | 0.32 EUR |
| 303+ | 0.24 EUR |
| 305+ | 0.23 EUR |
| 321+ | 0.22 EUR |
| 334+ | 0.21 EUR |