![FCH072N60F-F085 FCH072N60F-F085](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
FCH072N60F-F085 onsemi / Fairchild
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details FCH072N60F-F085 onsemi / Fairchild
Description: MOSFET N-CH 600V 52A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FCH072N60F-F085
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FCH072N60F-F085 | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
||
![]() |
FCH072N60F-F085 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
FCH072N60F-F085 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
FCH072N60F-F085 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |