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BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Packaging: Tape & Reel (TR)
Package / Case: 18-WFLGA Exposed Pad
Impedance: 50Ohm
Circuit: 4P4T
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 7.125GHz
Isolation: 27dB
Supplier Device Package: PG-WLGA-18-1
Produkt ist nicht verfügbar
BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Packaging: Cut Tape (CT)
Package / Case: 18-WFLGA Exposed Pad
Impedance: 50Ohm
Circuit: 4P4T
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 7.125GHz
Isolation: 27dB
Supplier Device Package: PG-WLGA-18-1
auf Bestellung 4054 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.29 EUR
10+ 3.85 EUR
25+ 3.63 EUR
100+ 3.1 EUR
250+ 2.91 EUR
500+ 2.54 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 5
BSZ050N03LSG BSZ050N03LSG Infineon Technologies INFNS16421-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
BSZ050N03MSG BSZ050N03MSG Infineon Technologies INFNS16422-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
BSM300GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 600A 2520W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 908 Stücke:
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2+319.64 EUR
Mindestbestellmenge: 2
FD300R12KS4B5HOSA1 FD300R12KS4B5HOSA1 Infineon Technologies Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763 Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 536 Stücke:
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2+291.25 EUR
Mindestbestellmenge: 2
BAS16-02VE6327 BAS16-02VE6327 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 85V
Produkt ist nicht verfügbar
K226N3622 Infineon Technologies Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
auf Bestellung 2532 Stücke:
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83+6.42 EUR
Mindestbestellmenge: 83
FP15R12KE3GBPSA1 FP15R12KE3GBPSA1 Infineon Technologies Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181 Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
auf Bestellung 7 Stücke:
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1+190.94 EUR
BTS5045-2EKA BTS5045-2EKA Infineon Technologies INFNS16647-1.pdf?t.download=true&u=5oefqw Description: BTS5045 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
BAS40E6433 BAS40E6433 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA SOT23-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
4052+0.12 EUR
Mindestbestellmenge: 4052
CY27410FLTXI CY27410FLTXI Infineon Technologies Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLOCK GENERATOR 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
10+51.7 EUR
Mindestbestellmenge: 10
IRF7456TRPBF-1 IRF7456TRPBF-1 Infineon Technologies IRF7456PbF-1_11-20-13.pdf Description: MOSFET N-CH 20V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Produkt ist nicht verfügbar
1MS08017E32W31490NOSA1 Infineon Technologies Description: MODULE IGBT STACK A-MS2-1
Produkt ist nicht verfügbar
BAV70E6767 BAV70E6767 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.032 EUR
Mindestbestellmenge: 13172
CY9AF156NPMC-G-JNE2 CY9AF156NPMC-G-JNE2 Infineon Technologies Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
Mindestbestellmenge: 7
CY9AF156NPMC-G-JNE2 CY9AF156NPMC-G-JNE2 Infineon Technologies Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
1ED020I12BTXUMA1 1ED020I12BTXUMA1 Infineon Technologies INFNS19244-1.pdf?t.download=true&u=5oefqw Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
D4600U45X172XPSA1 D4600U45X172XPSA1 Infineon Technologies Infineon-D4600U45X172-DS-v01_02-EN.pdf?fileId=5546d4625f96303e015fa5e43ef4397a Description: DIODE GP 4.5KV 4450A D17226K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4450A
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+5607.18 EUR
FF600R17ME4B11BPSA1 Infineon Technologies Infineon-FF600R17ME4_B11-DataSheet-v03_00-EN.pdf?fileId=db3a304333b8a7ca0133c679a07b6151 Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Produkt ist nicht verfügbar
FF1800R23IE7BPSA1 FF1800R23IE7BPSA1 Infineon Technologies Infineon-FF1800R23IE7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8412f8d30184859ae7390a24 Description: PP IHM I XHP 2.3KV AG-PRIME3+-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2966.43 EUR
TT210N12KOFHPSA1 TT210N12KOFHPSA1 Infineon Technologies TT210N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
SAA-XC866-2FRA5VBE SAA-XC866-2FRA5VBE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAA-XC866-2FRABE SAA-XC866-2FRABE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
192+2.67 EUR
Mindestbestellmenge: 192
SAA-XC866-4FRA SAA-XC866-4FRA Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
SAA-XC866-4FRA5VBE SAA-XC866-4FRA5VBE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
SAA-XC8664FRA5VBEAXUMA1 SAA-XC8664FRA5VBEAXUMA1 Infineon Technologies INFNS11218-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IHW20N65R5 IHW20N65R5 Infineon Technologies Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8 Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.4 EUR
10+ 5.6 EUR
100+ 4.01 EUR
Mindestbestellmenge: 3
IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 2108 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+ 1.9 EUR
100+ 1.28 EUR
500+ 1.02 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 6
IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+ 1.74 EUR
100+ 1.17 EUR
500+ 0.92 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 7
CY14B101NA-ZS45XI CY14B101NA-ZS45XI Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 668 Stücke:
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13+39.9 EUR
Mindestbestellmenge: 13
CY7C1263KV18-550BZXC CY7C1263KV18-550BZXC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
4+134.24 EUR
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CY7C1568KV18-550BZXI CY7C1568KV18-550BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
1+534.88 EUR
CY7C1570KV18-550BZXC CY7C1570KV18-550BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
1+501.58 EUR
CY7C1570KV18-550BZXI CY7C1570KV18-550BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
1+501.58 EUR
CY7C1668KV18-550BZXC CY7C1668KV18-550BZXC Infineon Technologies Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II%2B_SRAM_Two-Word_Burst_Architecture_%282.5_Cycle_Read_Latency%29-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
1+614.08 EUR
CY7C2168KV18-550BZC CY7C2168KV18-550BZC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
5+98.94 EUR
Mindestbestellmenge: 5
CY7C2170KV18-550BZXC CY7C2170KV18-550BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
5+98.94 EUR
Mindestbestellmenge: 5
CY7C2268KV18-550BZC CY7C2268KV18-550BZC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 163 Stücke:
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3+172.79 EUR
Mindestbestellmenge: 3
AUIRFN7110TR AUIRFN7110TR Infineon Technologies auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FS600R07A2E3BOSA1 Infineon Technologies Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
F3L11MR12W2M1B74BOMA1 F3L11MR12W2M1B74BOMA1 Infineon Technologies Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Produkt ist nicht verfügbar
BA595E6327 BA595E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
BA885E6327 BA885E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3752+0.14 EUR
Mindestbestellmenge: 3752
BA885E6327HTSA1 BA885E6327HTSA1 Infineon Technologies BA595_885_895_Series.pdf Description: RF DIODE PIN 50V SOT23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
BA892-02V-E6327 BA892-02V-E6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
BA892-02VE6327 BA892-02VE6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
BA89202LE6327 BA89202LE6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SOD-882
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
auf Bestellung 38046 Stücke:
Lieferzeit 10-14 Tag (e)
4157+0.11 EUR
Mindestbestellmenge: 4157
BA895-E6327 BA895-E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Produkt ist nicht verfügbar
BA895E6327 BA895E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 50 mA
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
6918+0.065 EUR
Mindestbestellmenge: 6918
BAL99E6327 BAL99E6327 Infineon Technologies INFNS10749-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 249164 Stücke:
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8266+0.064 EUR
Mindestbestellmenge: 8266
BAL99E6327HTSA1 BAL99E6327HTSA1 Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 220400 Stücke:
Lieferzeit 10-14 Tag (e)
8266+0.065 EUR
Mindestbestellmenge: 8266
BAR50-03WE6327 BAR50-03WE6327 Infineon Technologies INFNS15693-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
7493+0.07 EUR
Mindestbestellmenge: 7493
BAR9002ELSE6327XTSA1 BAR9002ELSE6327XTSA1 Infineon Technologies INFNS19426-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
BAR9002LRHE6327XTSA1 BAR9002LRHE6327XTSA1 Infineon Technologies bar90series.pdf Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 2220000 Stücke:
Lieferzeit 10-14 Tag (e)
7493+0.07 EUR
Mindestbestellmenge: 7493
TLE4998C3CHAMA1 TLE4998C3CHAMA1 Infineon Technologies TLE4998C3C_Data_Sheet_Rev1.1.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e52cfdd259e Description: SENSOR HALL PWM SSO3-10
Packaging: Bulk
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
118+4.15 EUR
Mindestbestellmenge: 118
BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Packaging: Tape & Reel (TR)
Package / Case: 18-WFLGA Exposed Pad
Impedance: 50Ohm
Circuit: 4P4T
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 7.125GHz
Isolation: 27dB
Supplier Device Package: PG-WLGA-18-1
Produkt ist nicht verfügbar
BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Packaging: Cut Tape (CT)
Package / Case: 18-WFLGA Exposed Pad
Impedance: 50Ohm
Circuit: 4P4T
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 1.5dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 7.125GHz
Isolation: 27dB
Supplier Device Package: PG-WLGA-18-1
auf Bestellung 4054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.29 EUR
10+ 3.85 EUR
25+ 3.63 EUR
100+ 3.1 EUR
250+ 2.91 EUR
500+ 2.54 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 5
BSZ050N03LSG INFNS16421-1.pdf?t.download=true&u=5oefqw
BSZ050N03LSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
BSZ050N03MSG INFNS16422-1.pdf?t.download=true&u=5oefqw
BSZ050N03MSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
BSM300GA170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2520W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+319.64 EUR
Mindestbestellmenge: 2
FD300R12KS4B5HOSA1 Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763
FD300R12KS4B5HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+291.25 EUR
Mindestbestellmenge: 2
BAS16-02VE6327 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16-02VE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 85V
Produkt ist nicht verfügbar
K226N3622
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
auf Bestellung 2532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
83+6.42 EUR
Mindestbestellmenge: 83
FP15R12KE3GBPSA1 Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181
FP15R12KE3GBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+190.94 EUR
BTS5045-2EKA INFNS16647-1.pdf?t.download=true&u=5oefqw
BTS5045-2EKA
Hersteller: Infineon Technologies
Description: BTS5045 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
BAS40E6433 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40E6433
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SOT23-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4052+0.12 EUR
Mindestbestellmenge: 4052
CY27410FLTXI Infineon-CY27410_4_PLL_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd11fe4748&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY27410FLTXI
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 700MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+51.7 EUR
Mindestbestellmenge: 10
IRF7456TRPBF-1 IRF7456PbF-1_11-20-13.pdf
IRF7456TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Produkt ist nicht verfügbar
1MS08017E32W31490NOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT STACK A-MS2-1
Produkt ist nicht verfügbar
BAV70E6767 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70E6767
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.032 EUR
Mindestbestellmenge: 13172
CY9AF156NPMC-G-JNE2 Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e
CY9AF156NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
Mindestbestellmenge: 7
CY9AF156NPMC-G-JNE2 Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e
CY9AF156NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
1ED020I12BTXUMA1 INFNS19244-1.pdf?t.download=true&u=5oefqw
1ED020I12BTXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
D4600U45X172XPSA1 Infineon-D4600U45X172-DS-v01_02-EN.pdf?fileId=5546d4625f96303e015fa5e43ef4397a
D4600U45X172XPSA1
Hersteller: Infineon Technologies
Description: DIODE GP 4.5KV 4450A D17226K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4450A
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5607.18 EUR
FF600R17ME4B11BPSA1 Infineon-FF600R17ME4_B11-DataSheet-v03_00-EN.pdf?fileId=db3a304333b8a7ca0133c679a07b6151
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Produkt ist nicht verfügbar
FF1800R23IE7BPSA1 Infineon-FF1800R23IE7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8412f8d30184859ae7390a24
FF1800R23IE7BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I XHP 2.3KV AG-PRIME3+-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2966.43 EUR
TT210N12KOFHPSA1 TT210N.pdf
TT210N12KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
SAA-XC866-2FRA5VBE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-2FRA5VBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAA-XC866-2FRABE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-2FRABE
Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
192+2.67 EUR
Mindestbestellmenge: 192
SAA-XC866-4FRA INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-4FRA
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
SAA-XC866-4FRA5VBE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-4FRA5VBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
SAA-XC8664FRA5VBEAXUMA1 INFNS11218-1.pdf?t.download=true&u=5oefqw
SAA-XC8664FRA5VBEAXUMA1
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IHW20N65R5 Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8
IHW20N65R5
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Produkt ist nicht verfügbar
IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.4 EUR
10+ 5.6 EUR
100+ 4.01 EUR
Mindestbestellmenge: 3
IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Produkt ist nicht verfügbar
IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
auf Bestellung 2108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.99 EUR
10+ 1.9 EUR
100+ 1.28 EUR
500+ 1.02 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 6
IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.73 EUR
11+ 1.74 EUR
100+ 1.17 EUR
500+ 0.92 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 7
CY14B101NA-ZS45XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101NA-ZS45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 668 Stücke:
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Anzahl Preis ohne MwSt
13+39.9 EUR
Mindestbestellmenge: 13
CY7C1263KV18-550BZXC download
CY7C1263KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 416 Stücke:
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Anzahl Preis ohne MwSt
4+134.24 EUR
Mindestbestellmenge: 4
CY7C1568KV18-550BZXI download
CY7C1568KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+534.88 EUR
CY7C1570KV18-550BZXC download
CY7C1570KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 218 Stücke:
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Anzahl Preis ohne MwSt
1+501.58 EUR
CY7C1570KV18-550BZXI download
CY7C1570KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
auf Bestellung 105 Stücke:
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Anzahl Preis ohne MwSt
1+501.58 EUR
CY7C1668KV18-550BZXC Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II%2B_SRAM_Two-Word_Burst_Architecture_%282.5_Cycle_Read_Latency%29-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791
CY7C1668KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
auf Bestellung 205 Stücke:
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1+614.08 EUR
CY7C2168KV18-550BZC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2168KV18-550BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 516 Stücke:
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Anzahl Preis ohne MwSt
5+98.94 EUR
Mindestbestellmenge: 5
CY7C2170KV18-550BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 155 Stücke:
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Anzahl Preis ohne MwSt
5+98.94 EUR
Mindestbestellmenge: 5
CY7C2268KV18-550BZC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2268KV18-550BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 163 Stücke:
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Anzahl Preis ohne MwSt
3+172.79 EUR
Mindestbestellmenge: 3
AUIRFN7110TR auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438
AUIRFN7110TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FS600R07A2E3BOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
F3L11MR12W2M1B74BOMA1 Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e
F3L11MR12W2M1B74BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
Produkt ist nicht verfügbar
BA595E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA595E6327
Hersteller: Infineon Technologies
Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
BA885E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA885E6327
Hersteller: Infineon Technologies
Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3752+0.14 EUR
Mindestbestellmenge: 3752
BA885E6327HTSA1 BA595_885_895_Series.pdf
BA885E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SOT23-3
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
BA892-02V-E6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02V-E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
BA892-02VE6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA892-02VE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
BA89202LE6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA89202LE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 35V
Packaging: Bulk
Package / Case: SOD-882
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
auf Bestellung 38046 Stücke:
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Anzahl Preis ohne MwSt
4157+0.11 EUR
Mindestbestellmenge: 4157
BA895-E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA895-E6327
Hersteller: Infineon Technologies
Description: PIN DIODE
Produkt ist nicht verfügbar
BA895E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA895E6327
Hersteller: Infineon Technologies
Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 50 mA
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6918+0.065 EUR
Mindestbestellmenge: 6918
BAL99E6327 INFNS10749-1.pdf?t.download=true&u=5oefqw
BAL99E6327
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 249164 Stücke:
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Anzahl Preis ohne MwSt
8266+0.064 EUR
Mindestbestellmenge: 8266
BAL99E6327HTSA1 bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6
BAL99E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 220400 Stücke:
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Anzahl Preis ohne MwSt
8266+0.065 EUR
Mindestbestellmenge: 8266
BAR50-03WE6327 INFNS15693-1.pdf?t.download=true&u=5oefqw
BAR50-03WE6327
Hersteller: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7493+0.07 EUR
Mindestbestellmenge: 7493
BAR9002ELSE6327XTSA1 INFNS19426-1.pdf?t.download=true&u=5oefqw
BAR9002ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
BAR9002LRHE6327XTSA1 bar90series.pdf
BAR9002LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 2220000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7493+0.07 EUR
Mindestbestellmenge: 7493
TLE4998C3CHAMA1 TLE4998C3C_Data_Sheet_Rev1.1.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3e52cfdd259e
TLE4998C3CHAMA1
Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Packaging: Bulk
Features: Selectable Scale, Temperature Compensated
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
118+4.15 EUR
Mindestbestellmenge: 118
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