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TT32302-56LQI48T Infineon Technologies Description: IC MCU TRUETOUCH
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TT330N16AOFHPSA1 TT330N16AOFHPSA1 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
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1+420.08 EUR
BSR302KL6327 BSR302KL6327 Infineon Technologies Infineon-BSR302N-DS-v01_03-en.pdf?fileId=db3a3043156fd573011622e789f21f7c Description: SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.16 EUR
Mindestbestellmenge: 3000
IPL65R195C7AUMA1 IPL65R195C7AUMA1 Infineon Technologies Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18 Description: MOSFET N-CH 650V 12A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
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3+6.49 EUR
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IST011N06NM5AUMA1 IST011N06NM5AUMA1 Infineon Technologies Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7 Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Produkt ist nicht verfügbar
IST011N06NM5AUMA1 IST011N06NM5AUMA1 Infineon Technologies Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7 Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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2+9.12 EUR
10+ 7.37 EUR
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BGS1711MC222EE6433XUSA1 Infineon Technologies Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 240000 Stücke:
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15000+0.033 EUR
Mindestbestellmenge: 15000
BTS3207NNT BTS3207NNT Infineon Technologies BTS3207N_2008_04_14.pdf Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 500mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 640mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
FF400R16KF4NOSA1 Infineon Technologies INFNS09012-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 3100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 42 Stücke:
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1+1982.09 EUR
FF400R12KT4HOSA1 Infineon Technologies INFN-S-A0002272792-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
auf Bestellung 402 Stücke:
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3+238.04 EUR
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FF400R12KT4PBOSA1 Infineon Technologies INFN-S-A0003614526-1.pdf?t.download=true&u=5oefqw Description: FF400R12KT4P - 1200 V, 400 A DUA
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
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3+238.04 EUR
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FF400R17KF4CNOSA1 FF400R17KF4CNOSA1 Infineon Technologies Description: FF400R17 - IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
B505CA4EMCAXP B505CA4EMCAXP Infineon Technologies INFNS03052-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT 32KB OTP 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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31+15.46 EUR
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C164CM4EFABFXUMA1 C164CM4EFABFXUMA1 Infineon Technologies C164CM_SM.pdf Description: IC MCU 16BIT 32KB OTP 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Verified
auf Bestellung 5185 Stücke:
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6+86.77 EUR
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CYW20707UA2KFFB4G CYW20707UA2KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26mA
Data Rate (Max): 3Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 24
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2661 Stücke:
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11+1.6 EUR
Mindestbestellmenge: 11
CYW20707UA1KFFB4GT CYW20707UA1KFFB4GT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 70000 Stücke:
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2500+2.28 EUR
Mindestbestellmenge: 2500
CYW20707UA1KFFB4G CYW20707UA1KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 6623 Stücke:
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8+2.27 EUR
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CYW20706UA1KFFB4G CYW20706UA1KFFB4G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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8+2.31 EUR
Mindestbestellmenge: 8
CYW20707UA1KFFB1G CYW20707UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 8438 Stücke:
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8+2.31 EUR
Mindestbestellmenge: 8
CYW20742A2KFB1GT CYW20742A2KFB1GT Infineon Technologies 5047 Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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3000+2.84 EUR
Mindestbestellmenge: 3000
CYW20745A0KFBGT CYW20745A0KFBGT Infineon Technologies Infineon-CYW20745_ROM_Based_Single_Microphone_Headset_IC_With_Voice_Command_Recognition_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee213ca6861&utm_source=cypress&utm_medium=referral&utm Description: IC RF BLUETOOTH 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 64-FBGA (7x7)
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.27 EUR
Mindestbestellmenge: 3000
CYW20732E CYW20732E Infineon Technologies CYW20732E_Web.pdf Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 14128 Stücke:
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3+6.9 EUR
Mindestbestellmenge: 3
BF999E6812HTSA1 BF999E6812HTSA1 Infineon Technologies Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 16mA
Mounting Type: Surface Mount
Frequency: 300MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Last Time Buy
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IMC099TT038XUMA1 IMC099TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR CONTROL TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
BSM30GD60DLCE3224 Infineon Technologies BSM30GD60DLCE3224_Rev3_2006-01-31.pdf Description: IGBT MODULE 600V 40A 135W
Produkt ist nicht verfügbar
TLE42672GATMA2 TLE42672GATMA2 Infineon Technologies INFNS28001-1.pdf?t.download=true&u=ovmfp3 Description: TLE4267-2G - LINEAR VOLTAGE REGU
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
auf Bestellung 42202 Stücke:
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229+2.11 EUR
Mindestbestellmenge: 229
FS50R12KT4B15BOSA1 FS50R12KT4B15BOSA1 Infineon Technologies Infineon-FS50R12KT4_B15-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a4955bbac00fc Description: IGBT MOD 1200V 50A 280W
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
F3L300R12MT4B23BOSA1 F3L300R12MT4B23BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 721 Stücke:
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2+438.96 EUR
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FF11MR12W1M1B70BPSA1 Infineon Technologies Infineon-FF11MR12W1M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc74390178365dff877ca9 Description: SIC 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B
Part Status: Obsolete
Produkt ist nicht verfügbar
92-0263PBF Infineon Technologies Description: IC MOSFET
Produkt ist nicht verfügbar
IPU60R600C6 IPU60R600C6 Infineon Technologies INFNS17575-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
IPP60R600C6 IPP60R600C6 Infineon Technologies INFN-S-A0001299750-1.pdf?t.download=true&u=5oefqw Description: 7.3A, 600V, 0.6OHM, N-CHANNEL MO
Produkt ist nicht verfügbar
IPA60R600C6XKSA1 IPA60R600C6XKSA1 Infineon Technologies IPA60R600C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a824c1c27d62 Description: MOSFET N-CH 600V 7.3A TO220-FP
Produkt ist nicht verfügbar
BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
10+ 3.77 EUR
25+ 3.36 EUR
100+ 3.03 EUR
250+ 2.69 EUR
500+ 2.35 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 5
BSZ010NE2LS5ATMA1 BSZ010NE2LS5ATMA1 Infineon Technologies Infineon-BSZ010NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6e31d52a1 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Produkt ist nicht verfügbar
BSZ010NE2LS5ATMA1 BSZ010NE2LS5ATMA1 Infineon Technologies Infineon-BSZ010NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6e31d52a1 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 3638 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.87 EUR
10+ 3.5 EUR
25+ 3.12 EUR
100+ 2.81 EUR
250+ 2.5 EUR
500+ 2.18 EUR
1000+ 1.81 EUR
Mindestbestellmenge: 5
IPW65R115CFD7AXKSA1 IPW65R115CFD7AXKSA1 Infineon Technologies Infineon-IPW65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c02958e0092d Description: MOSFET N-CH 650V 21A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.26 EUR
10+ 6.9 EUR
100+ 5.01 EUR
Mindestbestellmenge: 2
TUA6010XS TUA6010XS Infineon Technologies tua_6010xs.pdf?t.download=true&u=5oefqw Description: VIDEO TUNER, 2-BAND
Packaging: Bulk
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
335+1.44 EUR
Mindestbestellmenge: 335
IPB22N03S4L15ATMA1 IPB22N03S4L15ATMA1 Infineon Technologies IPx22N03S4L-15.pdf Description: MOSFET N-CH 30V 22A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
245+1.94 EUR
Mindestbestellmenge: 245
IPB22N03S4L-15 IPB22N03S4L-15 Infineon Technologies INFNS10907-1.pdf?t.download=true&u=5oefqw Description: IPB22N03 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
246+2.15 EUR
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BCW60E6422HTMA1 BCW60E6422HTMA1 Infineon Technologies Infineon_PD_185_14.pdf Description: BCW60 - BIPOLAR BJT TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.05V @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.031 EUR
Mindestbestellmenge: 13172
IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 Infineon Technologies Infineon-IGLD60R190D1-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba Description: GAN N-CH 600V 10A LSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
PEF22623EV2.1-G Infineon Technologies Description: ONE CHIP RATE ADAPTIVE TRANSCEIC
Packaging: Bulk
Part Status: Active
auf Bestellung 3585 Stücke:
Lieferzeit 10-14 Tag (e)
9+56.54 EUR
Mindestbestellmenge: 9
2SD315AINPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
2SD315AI33NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
TZ310N22KOFHPSA1 TZ310N22KOFHPSA1 Infineon Technologies Infineon-TZ310N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712afb549e3ff5 Description: SCR MODULE 2.2KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N26KOFHPSA1 TZ310N26KOFHPSA1 Infineon Technologies Infineon-TZ310N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712afb549e3ff5 Description: SCR MODULE 2.6KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N20KOFHPSA1 TZ310N20KOFHPSA1 Infineon Technologies TZ310N.pdf Description: SCR MODULE 2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
TZ310N24KOFHPSA1 TZ310N24KOFHPSA1 Infineon Technologies TZ310N.pdf Description: SCR MODULE 2.4KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N26KOGHPSA1 TZ310N26KOGHPSA1 Infineon Technologies Description: DIODE BG-PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
S29AL008J70SFI010 Infineon Technologies Description: IC FLASH 8MBIT PARALLEL 56SSOP
Packaging: Tray
Package / Case: 56-SOP (0.524", 13.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-SSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFS4115-7TRL AUIRFS4115-7TRL Infineon Technologies INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw Description: MOSFET_(120V,300V)
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
99+4.77 EUR
Mindestbestellmenge: 99
FF225R12ME4PB11BPSA1 FF225R12ME4PB11BPSA1 Infineon Technologies Infineon-FF225R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625a888733015ab228341760f9 Description: IGBT MOD 1200V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
TLE42694GXUMA2 TLE42694GXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.14 EUR
5000+ 1.08 EUR
Mindestbestellmenge: 2500
SAH-XC2288H-200F80LAB Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAK-XC2288I-136F128LAA SAK-XC2288I-136F128LAA Infineon Technologies INFNS28076-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 28x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
XC2288I136F128LAAKXUMA1 XC2288I136F128LAAKXUMA1 Infineon Technologies XC2288I_89I_v1.2_2012-06.pdf Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
BSP135IXTSA1 BSP135IXTSA1 Infineon Technologies Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.56 EUR
Mindestbestellmenge: 1000
BSP135IXTSA1 BSP135IXTSA1 Infineon Technologies Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.64 EUR
16+ 1.1 EUR
100+ 0.76 EUR
500+ 0.61 EUR
Mindestbestellmenge: 11
BAT1704E6583HTSA1 BAT1704E6583HTSA1 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: BAT17 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
4371+0.11 EUR
Mindestbestellmenge: 4371
TT32302-56LQI48T
Hersteller: Infineon Technologies
Description: IC MCU TRUETOUCH
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TT330N16AOFHPSA1 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TT330N16AOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+420.08 EUR
BSR302KL6327 Infineon-BSR302N-DS-v01_03-en.pdf?fileId=db3a3043156fd573011622e789f21f7c
BSR302KL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
IPL65R195C7AUMA1 Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18
IPL65R195C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.49 EUR
10+ 5.84 EUR
Mindestbestellmenge: 3
IST011N06NM5AUMA1 Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7
IST011N06NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Produkt ist nicht verfügbar
IST011N06NM5AUMA1 Infineon-IST011N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177aa91e7c17ec7
IST011N06NM5AUMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 76 Stücke:
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2+9.12 EUR
10+ 7.37 EUR
Mindestbestellmenge: 2
BGS1711MC222EE6433XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 240000 Stücke:
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15000+0.033 EUR
Mindestbestellmenge: 15000
BTS3207NNT BTS3207N_2008_04_14.pdf
BTS3207NNT
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 500mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 640mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
FF400R16KF4NOSA1 INFNS09012-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 3100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1982.09 EUR
FF400R12KT4HOSA1 INFN-S-A0002272792-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
auf Bestellung 402 Stücke:
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Anzahl Preis ohne MwSt
3+238.04 EUR
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FF400R12KT4PBOSA1 INFN-S-A0003614526-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FF400R12KT4P - 1200 V, 400 A DUA
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28000 pF @ 25 V
auf Bestellung 3 Stücke:
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3+238.04 EUR
Mindestbestellmenge: 3
FF400R17KF4CNOSA1
FF400R17KF4CNOSA1
Hersteller: Infineon Technologies
Description: FF400R17 - IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
B505CA4EMCAXP INFNS03052-1.pdf?t.download=true&u=5oefqw
B505CA4EMCAXP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB OTP 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.25K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+15.46 EUR
Mindestbestellmenge: 31
C164CM4EFABFXUMA1 C164CM_SM.pdf
C164CM4EFABFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 32KB OTP 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Verified
auf Bestellung 5185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+86.77 EUR
Mindestbestellmenge: 6
CYW20707UA2KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA2KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26mA
Data Rate (Max): 3Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 24
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2661 Stücke:
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Anzahl Preis ohne MwSt
11+1.6 EUR
Mindestbestellmenge: 11
CYW20707UA1KFFB4GT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 70000 Stücke:
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Anzahl Preis ohne MwSt
2500+2.28 EUR
Mindestbestellmenge: 2500
CYW20707UA1KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 6623 Stücke:
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Anzahl Preis ohne MwSt
8+2.27 EUR
Mindestbestellmenge: 8
CYW20706UA1KFFB4G download
CYW20706UA1KFFB4G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 9245 Stücke:
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Anzahl Preis ohne MwSt
8+2.31 EUR
Mindestbestellmenge: 8
CYW20707UA1KFFB1G download
CYW20707UA1KFFB1G
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 49VFBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 8438 Stücke:
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Anzahl Preis ohne MwSt
8+2.31 EUR
Mindestbestellmenge: 8
CYW20742A2KFB1GT 5047
CYW20742A2KFB1GT
Hersteller: Infineon Technologies
Description: IC RF SGL CHIP BLE 81FBGA
Packaging: Tape & Reel (TR)
Package / Case: 81-TFBGA
Mounting Type: Surface Mount
Supplier Device Package: 81-FBGA (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis ohne MwSt
3000+2.84 EUR
Mindestbestellmenge: 3000
CYW20745A0KFBGT Infineon-CYW20745_ROM_Based_Single_Microphone_Headset_IC_With_Voice_Command_Recognition_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee213ca6861&utm_source=cypress&utm_medium=referral&utm
CYW20745A0KFBGT
Hersteller: Infineon Technologies
Description: IC RF BLUETOOTH 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 64-FBGA (7x7)
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.27 EUR
Mindestbestellmenge: 3000
CYW20732E CYW20732E_Web.pdf
CYW20732E
Hersteller: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 14128 Stücke:
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Anzahl Preis ohne MwSt
3+6.9 EUR
Mindestbestellmenge: 3
BF999E6812HTSA1
BF999E6812HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 16mA
Mounting Type: Surface Mount
Frequency: 300MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Last Time Buy
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IMC099TT038XUMA1 Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC099TT038XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR CONTROL TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
BSM30GD60DLCE3224 BSM30GD60DLCE3224_Rev3_2006-01-31.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 40A 135W
Produkt ist nicht verfügbar
TLE42672GATMA2 INFNS28001-1.pdf?t.download=true&u=ovmfp3
TLE42672GATMA2
Hersteller: Infineon Technologies
Description: TLE4267-2G - LINEAR VOLTAGE REGU
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
auf Bestellung 42202 Stücke:
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Anzahl Preis ohne MwSt
229+2.11 EUR
Mindestbestellmenge: 229
FS50R12KT4B15BOSA1 Infineon-FS50R12KT4_B15-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a4955bbac00fc
FS50R12KT4B15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
F3L300R12MT4B23BOSA1 Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c
F3L300R12MT4B23BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
auf Bestellung 721 Stücke:
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Anzahl Preis ohne MwSt
2+438.96 EUR
Mindestbestellmenge: 2
FF11MR12W1M1B70BPSA1 Infineon-FF11MR12W1M1_B70-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc74390178365dff877ca9
Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B
Part Status: Obsolete
Produkt ist nicht verfügbar
92-0263PBF
Hersteller: Infineon Technologies
Description: IC MOSFET
Produkt ist nicht verfügbar
IPU60R600C6 INFNS17575-1.pdf?t.download=true&u=5oefqw
IPU60R600C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
IPP60R600C6 INFN-S-A0001299750-1.pdf?t.download=true&u=5oefqw
IPP60R600C6
Hersteller: Infineon Technologies
Description: 7.3A, 600V, 0.6OHM, N-CHANNEL MO
Produkt ist nicht verfügbar
IPA60R600C6XKSA1 IPA60R600C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a824c1c27d62
IPA60R600C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-FP
Produkt ist nicht verfügbar
BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
BSZ009NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
auf Bestellung 9540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.17 EUR
10+ 3.77 EUR
25+ 3.36 EUR
100+ 3.03 EUR
250+ 2.69 EUR
500+ 2.35 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 5
BSZ010NE2LS5ATMA1 Infineon-BSZ010NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6e31d52a1
BSZ010NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Produkt ist nicht verfügbar
BSZ010NE2LS5ATMA1 Infineon-BSZ010NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53a6e31d52a1
BSZ010NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 3638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.87 EUR
10+ 3.5 EUR
25+ 3.12 EUR
100+ 2.81 EUR
250+ 2.5 EUR
500+ 2.18 EUR
1000+ 1.81 EUR
Mindestbestellmenge: 5
IPW65R115CFD7AXKSA1 Infineon-IPW65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171c02958e0092d
IPW65R115CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 21A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.26 EUR
10+ 6.9 EUR
100+ 5.01 EUR
Mindestbestellmenge: 2
TUA6010XS tua_6010xs.pdf?t.download=true&u=5oefqw
TUA6010XS
Hersteller: Infineon Technologies
Description: VIDEO TUNER, 2-BAND
Packaging: Bulk
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
335+1.44 EUR
Mindestbestellmenge: 335
IPB22N03S4L15ATMA1 IPx22N03S4L-15.pdf
IPB22N03S4L15ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
245+1.94 EUR
Mindestbestellmenge: 245
IPB22N03S4L-15 INFNS10907-1.pdf?t.download=true&u=5oefqw
IPB22N03S4L-15
Hersteller: Infineon Technologies
Description: IPB22N03 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
246+2.15 EUR
Mindestbestellmenge: 246
BCW60E6422HTMA1 Infineon_PD_185_14.pdf
BCW60E6422HTMA1
Hersteller: Infineon Technologies
Description: BCW60 - BIPOLAR BJT TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.05V @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.031 EUR
Mindestbestellmenge: 13172
IGLD60R190D1AUMA1 Infineon-IGLD60R190D1-DataSheet-v02_00-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba
IGLD60R190D1AUMA1
Hersteller: Infineon Technologies
Description: GAN N-CH 600V 10A LSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Produkt ist nicht verfügbar
PEF22623EV2.1-G
Hersteller: Infineon Technologies
Description: ONE CHIP RATE ADAPTIVE TRANSCEIC
Packaging: Bulk
Part Status: Active
auf Bestellung 3585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+56.54 EUR
Mindestbestellmenge: 9
2SD315AINPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
2SD315AI33NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
TZ310N22KOFHPSA1 Infineon-TZ310N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712afb549e3ff5
TZ310N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N26KOFHPSA1 Infineon-TZ310N-DataSheet-v02_00-EN.pdf?fileId=5546d4627112d9d501712afb549e3ff5
TZ310N26KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.6KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N20KOFHPSA1 TZ310N.pdf
TZ310N20KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
TZ310N24KOFHPSA1 TZ310N.pdf
TZ310N24KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.4KV 700A MODULE
Produkt ist nicht verfügbar
TZ310N26KOGHPSA1
TZ310N26KOGHPSA1
Hersteller: Infineon Technologies
Description: DIODE BG-PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
S29AL008J70SFI010
Hersteller: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 56SSOP
Packaging: Tray
Package / Case: 56-SOP (0.524", 13.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-SSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFS4115-7TRL INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw
AUIRFS4115-7TRL
Hersteller: Infineon Technologies
Description: MOSFET_(120V,300V)
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
99+4.77 EUR
Mindestbestellmenge: 99
FF225R12ME4PB11BPSA1 Infineon-FF225R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625a888733015ab228341760f9
FF225R12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
TLE42694GXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.14 EUR
5000+ 1.08 EUR
Mindestbestellmenge: 2500
SAH-XC2288H-200F80LAB
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 110°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAK-XC2288I-136F128LAA INFNS28076-1.pdf?t.download=true&u=5oefqw
SAK-XC2288I-136F128LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 28x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
XC2288I136F128LAAKXUMA1 XC2288I_89I_v1.2_2012-06.pdf
XC2288I136F128LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
BSP135IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.56 EUR
Mindestbestellmenge: 1000
BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
BSP135IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
16+ 1.1 EUR
100+ 0.76 EUR
500+ 0.61 EUR
Mindestbestellmenge: 11
BAT1704E6583HTSA1 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT1704E6583HTSA1
Hersteller: Infineon Technologies
Description: BAT17 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4371+0.11 EUR
Mindestbestellmenge: 4371
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