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IPB22N03S4L-15 Infineon Technologies
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Description: IPB22N03 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
246+ | 2.15 EUR |
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Technische Details IPB22N03S4L-15 Infineon Technologies
Description: IPB22N03 - 20V-40V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 10µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.
Weitere Produktangebote IPB22N03S4L-15 nach Preis ab 2.29 EUR bis 3.47 EUR
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IPB22N03S4L-15 | Hersteller : Infineon Technologies |
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auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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