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BGA231N7E6327XTSA2 BGA231N7E6327XTSA2 Infineon Technologies BGA231N7.pdf Description: NARROW BAND HIGH POWER AMPLIFIER
auf Bestellung 455976 Stücke:
Lieferzeit 10-14 Tag (e)
BGA231L7E6327 BGA231L7E6327 Infineon Technologies INFNS16697-1.pdf?t.download=true&u=5oefqw Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 5946 Stücke:
Lieferzeit 10-14 Tag (e)
866+0.56 EUR
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BGA728L7E6327 Infineon Technologies Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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416+1.16 EUR
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BGA123N6E6327XTSA1 BGA123N6E6327XTSA1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.2dB
Current - Supply: 1.45mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
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15000+0.26 EUR
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BGA123N6E6327XTSA1 BGA123N6E6327XTSA1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.2dB
Current - Supply: 1.45mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
auf Bestellung 15849 Stücke:
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28+ 0.64 EUR
31+ 0.58 EUR
100+ 0.51 EUR
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1000+ 0.31 EUR
5000+ 0.28 EUR
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BGA125N6E6327XTSA1 BGA125N6E6327XTSA1 Infineon Technologies Infineon-BGA125N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7 Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
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1000+ 0.3 EUR
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IFX25001TSV85AKSA1 IFX25001TSV85AKSA1 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001TSV85 IFX25001TSV85 Infineon Technologies INFNS14793-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE REG
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IM240M6Y1BAKMA1 IM240M6Y1BAKMA1 Infineon Technologies IM240-M6xxB.pdf Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
Produkt ist nicht verfügbar
BF5020WE6327 Infineon Technologies INFNS13463-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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2615+0.25 EUR
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BF 5020 E6327 BF 5020 E6327 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
BF 5020R E6327 BF 5020R E6327 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
TLE92104232QXXUMA1 Infineon Technologies Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976 Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4720 Stücke:
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3+6.09 EUR
10+ 5.47 EUR
25+ 5.17 EUR
100+ 4.48 EUR
250+ 4.25 EUR
500+ 3.82 EUR
1000+ 3.22 EUR
Mindestbestellmenge: 3
EVAL6EDL04N02PRTOBO1 EVAL6EDL04N02PRTOBO1 Infineon Technologies Infineon-Evaluationboard-6EDL04N02PR-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029b70dc80304 Description: EVAL-6EDL04N02PR TO SHOW THE FUN
auf Bestellung 2 Stücke:
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1+256.29 EUR
AUIRS2336STR AUIRS2336STR Infineon Technologies auirs2336s.pdf?fileId=5546d462533600a4015355bfa09e15c6 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
S29GL01GT11TFIV20 S29GL01GT11TFIV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1379 Stücke:
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2+15.93 EUR
10+ 15.33 EUR
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BGSC2341ML10E6327XTSA1 BGSC2341ML10E6327XTSA1 Infineon Technologies Infineon-BGSC2341ML10-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc743901785a97e2ee47af Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Produkt ist nicht verfügbar
BGSC2341ML10E6327XTSA1 BGSC2341ML10E6327XTSA1 Infineon Technologies Infineon-BGSC2341ML10-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc743901785a97e2ee47af Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
auf Bestellung 6981 Stücke:
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250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
2500+ 0.53 EUR
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REFFRIDGED111TMOSTOBO1 REFFRIDGED111TMOSTOBO1 Infineon Technologies Infineon-UG_2020_19_REF_Fridge_D111T-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901783c043d8f52e6 Description: REF BOARD FRIDGE_D111T_MOS
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
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1+319 EUR
SAF-XC878-13FFA5VAC SAF-XC878-13FFA5VAC Infineon Technologies INFNS15609-1.pdf?t.download=true&u=5oefqw Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 496 Stücke:
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CY7C1525V18-200BZXC CY7C1525V18-200BZXC Infineon Technologies CY7C1510%2C12%2C14%2C25V18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
auf Bestellung 49 Stücke:
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3+208.19 EUR
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IPP65R190CFD7AAKSA1 IPP65R190CFD7AAKSA1 Infineon Technologies Infineon-IPP65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751cb7c50842fe Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1248 Stücke:
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50+ 2.83 EUR
100+ 2.42 EUR
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IPP65R280C6XKSA1 IPP65R280C6XKSA1 Infineon Technologies IPP65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8a961e7158be Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 1500 Stücke:
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IPP65R125C7 IPP65R125C7 Infineon Technologies INFNS28758-1.pdf?t.download=true&u=5oefqw Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Produkt ist nicht verfügbar
IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 333 Stücke:
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333+1.87 EUR
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IPP65R190CFD7XKSA1 IPP65R190CFD7XKSA1 Infineon Technologies Infineon-IPP65R190CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef3c15249c2 Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
auf Bestellung 936 Stücke:
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500+ 2.5 EUR
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IPP65R155CFD7XKSA1 IPP65R155CFD7XKSA1 Infineon Technologies Infineon-IPP65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d0be97bab Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
auf Bestellung 157 Stücke:
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IPP65R090CFD7XKSA1 IPP65R090CFD7XKSA1 Infineon Technologies Infineon-IPP65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef5665e49f0 Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
auf Bestellung 190 Stücke:
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3+8.06 EUR
50+ 6.4 EUR
100+ 5.48 EUR
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IPP65R060CFD7XKSA1 IPP65R060CFD7XKSA1 Infineon Technologies Infineon-IPP65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951be6b44f1 Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
auf Bestellung 314 Stücke:
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2+11.49 EUR
10+ 7.78 EUR
100+ 5.68 EUR
Mindestbestellmenge: 2
BTT60302ERBXUMA1 BTT60302ERBXUMA1 Infineon Technologies Infineon-BTT6030-2ERB-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa51430d86 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTT60501ERAXUMA1 BTT60501ERAXUMA1 Infineon Technologies Infineon-BTT6050-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa5b7a0d8a Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8653 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.14 EUR
6000+ 2.06 EUR
Mindestbestellmenge: 3000
BTS70302EPAXUMA1 BTS70302EPAXUMA1 Infineon Technologies Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9107 Stücke:
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6+3.27 EUR
10+ 2.94 EUR
25+ 2.78 EUR
100+ 2.37 EUR
250+ 2.22 EUR
500+ 1.94 EUR
1000+ 1.61 EUR
Mindestbestellmenge: 6
BTS70081EPPXUMA1 BTS70081EPPXUMA1 Infineon Technologies BTS7008-1EPP_v1.03_4-29-19.pdf Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3242 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+ 2.89 EUR
25+ 2.48 EUR
100+ 2.01 EUR
250+ 1.79 EUR
500+ 1.65 EUR
1000+ 1.54 EUR
Mindestbestellmenge: 4
BTS70081EPAXUMA1 BTS70081EPAXUMA1 Infineon Technologies Infineon-BTS7008-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe7f1b8308ad Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.34 EUR
Mindestbestellmenge: 3000
BTS5012SDA BTS5012SDA Infineon Technologies INFNS15727-1.pdf?t.download=true&u=5oefqw Description: BTS5012 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
FF450R08A03P2XKSA1 FF450R08A03P2XKSA1 Infineon Technologies Infineon-FF450R08A03P2-DataSheet-v03_00-EN.pdf?fileId=5546d46273a5366f0173b96a28c32dc0 Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
1+247 EUR
CY7C1168V18-400BZXC CY7C1168V18-400BZXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)
8+70.98 EUR
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PEB8191HDV1.1 PEB8191HDV1.1 Infineon Technologies Description: INTELLIGENT NTC-Q NETWORK TERMI
auf Bestellung 23301 Stücke:
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PEB8191HV1.1 Infineon Technologies Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 16128 Stücke:
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PEB8191FGDV1.1 Infineon Technologies Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
MB89663PF-GT-198-BNDE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPG20N04S412ATMA1 IPG20N04S412ATMA1 Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SPD07N60S5AATMA1 SPD07N60S5AATMA1 Infineon Technologies INFNS27107-1.pdf?t.download=true&u=5oefqw Description: SPD07N60S5 - COOL MOS POWER MOSF
Produkt ist nicht verfügbar
SPP20N60C3 SPP20N60C3 Infineon Technologies INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
ETT480N22P60HPSA1 ETT480N22P60HPSA1 Infineon Technologies Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
TLE92783BQXV33XUMA1 TLE92783BQXV33XUMA1 Infineon Technologies Infineon-TLE9278-3BQX%20V33-DataSheet-v01_50-EN.pdf?fileId=5546d462689a790c0168c75d4d546425 Description: BODY SYSTEM ICS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TLE9278BQXV33XUMA1 TLE9278BQXV33XUMA1 Infineon Technologies Infineon-TLE9278BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c78b11316437 Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
TLE9278BQXXUMA1 TLE9278BQXXUMA1 Infineon Technologies Infineon-TLE9278BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c76f9e44642c Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
TLE92783BQXXUMA1 TLE92783BQXXUMA1 Infineon Technologies Infineon-TLE9278-3BQX-DataSheet-v01_50-EN.pdf?fileId=5546d462689a790c0168c738ae356420 Description: BODY SYSTEM ICS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TLE8718SAAUMA4 TLE8718SAAUMA4 Infineon Technologies Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.93 EUR
Mindestbestellmenge: 800
TLE824533SAAUMA1 TLE824533SAAUMA1 Infineon Technologies Infineon-TLE82453-3SA-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d289949d61dff Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 6
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
800+20.94 EUR
Mindestbestellmenge: 800
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 Infineon Technologies Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.3 EUR
10+ 3.45 EUR
100+ 2.41 EUR
500+ 1.96 EUR
1000+ 1.81 EUR
2000+ 1.74 EUR
Mindestbestellmenge: 4
BSZ084N08NS5ATMA1 BSZ084N08NS5ATMA1 Infineon Technologies Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 34017 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+ 2.18 EUR
100+ 1.48 EUR
500+ 1.18 EUR
1000+ 1.08 EUR
2000+ 1 EUR
Mindestbestellmenge: 6
IPB65R600C6 IPB65R600C6 Infineon Technologies INFNS28015-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPI65R600C6 IPI65R600C6 Infineon Technologies INFNS28015-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPI65R600C6XKSA1 IPI65R600C6XKSA1 Infineon Technologies DS_2156_IPx65R600C6.pdf Description: IPI65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPB65R600C6ATMA1 IPB65R600C6ATMA1 Infineon Technologies Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4 Description: IPB65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
BGM15MA12E6327XTSA1 BGM15MA12E6327XTSA1 Infineon Technologies BGM15MA12.pdf Description: IC AMP LTE 1.7GHZ-2.2GHZ 12ATSLP
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.7GHz ~ 2.2GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
P1dB: -8dBm
Test Frequency: 2.11GHz ~ 2.17GHz
Supplier Device Package: ATSLP-12-3
Part Status: Obsolete
auf Bestellung 252000 Stücke:
Lieferzeit 10-14 Tag (e)
751+0.66 EUR
Mindestbestellmenge: 751
PBL387821QSD Infineon Technologies Description: FLEXISLIC SLIC
Packaging: Bulk
Part Status: Active
auf Bestellung 7776 Stücke:
Lieferzeit 10-14 Tag (e)
75+6.6 EUR
Mindestbestellmenge: 75
BGA231N7E6327XTSA2 BGA231N7.pdf
BGA231N7E6327XTSA2
Hersteller: Infineon Technologies
Description: NARROW BAND HIGH POWER AMPLIFIER
auf Bestellung 455976 Stücke:
Lieferzeit 10-14 Tag (e)
BGA231L7E6327 INFNS16697-1.pdf?t.download=true&u=5oefqw
BGA231L7E6327
Hersteller: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 5946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
866+0.56 EUR
Mindestbestellmenge: 866
BGA728L7E6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 7917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
416+1.16 EUR
Mindestbestellmenge: 416
BGA123N6E6327XTSA1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
BGA123N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.2dB
Current - Supply: 1.45mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15000+0.26 EUR
Mindestbestellmenge: 15000
BGA123N6E6327XTSA1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
BGA123N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.2dB
Current - Supply: 1.45mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
auf Bestellung 15849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
28+ 0.64 EUR
31+ 0.58 EUR
100+ 0.51 EUR
250+ 0.45 EUR
500+ 0.39 EUR
1000+ 0.31 EUR
5000+ 0.28 EUR
Mindestbestellmenge: 25
BGA125N6E6327XTSA1 Infineon-BGA125N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7
BGA125N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
auf Bestellung 26669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
29+ 0.62 EUR
32+ 0.56 EUR
100+ 0.49 EUR
250+ 0.43 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
5000+ 0.27 EUR
Mindestbestellmenge: 25
IFX25001TSV85AKSA1 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TSV85AKSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
auf Bestellung 23124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
630+0.79 EUR
Mindestbestellmenge: 630
IFX25001TSV85 INFNS14793-1.pdf?t.download=true&u=5oefqw
IFX25001TSV85
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
auf Bestellung 9318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
682+0.81 EUR
Mindestbestellmenge: 682
IM240M6Y1BAKMA1 IM240-M6xxB.pdf
IM240M6Y1BAKMA1
Hersteller: Infineon Technologies
Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
Produkt ist nicht verfügbar
BF5020WE6327 INFNS13463-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
auf Bestellung 2615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2615+0.25 EUR
Mindestbestellmenge: 2615
BF 5020 E6327 Part_Number_Guide_Web.pdf
BF 5020 E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
BF 5020R E6327 Part_Number_Guide_Web.pdf
BF 5020R E6327
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
TLE92104232QXXUMA1 Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.47 EUR
25+ 5.17 EUR
100+ 4.48 EUR
250+ 4.25 EUR
500+ 3.82 EUR
1000+ 3.22 EUR
Mindestbestellmenge: 3
EVAL6EDL04N02PRTOBO1 Infineon-Evaluationboard-6EDL04N02PR-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029b70dc80304
EVAL6EDL04N02PRTOBO1
Hersteller: Infineon Technologies
Description: EVAL-6EDL04N02PR TO SHOW THE FUN
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+256.29 EUR
AUIRS2336STR auirs2336s.pdf?fileId=5546d462533600a4015355bfa09e15c6
AUIRS2336STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
S29GL01GT11TFIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11TFIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.93 EUR
10+ 15.33 EUR
Mindestbestellmenge: 2
BGSC2341ML10E6327XTSA1 Infineon-BGSC2341ML10-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc743901785a97e2ee47af
BGSC2341ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Produkt ist nicht verfügbar
BGSC2341ML10E6327XTSA1 Infineon-BGSC2341ML10-DataSheet-v02_00-EN.pdf?fileId=5546d46277fc743901785a97e2ee47af
BGSC2341ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
auf Bestellung 6981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
15+ 1.21 EUR
25+ 1.14 EUR
100+ 0.93 EUR
250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.59 EUR
2500+ 0.53 EUR
Mindestbestellmenge: 13
REFFRIDGED111TMOSTOBO1 Infineon-UG_2020_19_REF_Fridge_D111T-UserManual-v01_00-EN.pdf?fileId=5546d46277fc743901783c043d8f52e6
REFFRIDGED111TMOSTOBO1
Hersteller: Infineon Technologies
Description: REF BOARD FRIDGE_D111T_MOS
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+319 EUR
SAF-XC878-13FFA5VAC INFNS15609-1.pdf?t.download=true&u=5oefqw
SAF-XC878-13FFA5VAC
Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
CY7C1525V18-200BZXC CY7C1510%2C12%2C14%2C25V18.pdf
CY7C1525V18-200BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+208.19 EUR
Mindestbestellmenge: 3
IPP65R190CFD7AAKSA1 Infineon-IPP65R190CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751cb7c50842fe
IPP65R190CFD7AAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.56 EUR
50+ 2.83 EUR
100+ 2.42 EUR
500+ 2.37 EUR
Mindestbestellmenge: 5
IPP65R280C6XKSA1 IPP65R280C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a8a961e7158be
IPP65R280C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
273+1.81 EUR
Mindestbestellmenge: 273
IPP65R125C7 INFNS28758-1.pdf?t.download=true&u=5oefqw
IPP65R125C7
Hersteller: Infineon Technologies
Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Produkt ist nicht verfügbar
IPP65R420CFDXKSA1 IPx65R420CFD.pdf
IPP65R420CFDXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
333+1.87 EUR
Mindestbestellmenge: 333
IPP65R190CFD7XKSA1 Infineon-IPP65R190CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef3c15249c2
IPP65R190CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
50+ 3.59 EUR
100+ 2.95 EUR
500+ 2.5 EUR
Mindestbestellmenge: 4
IPP65R155CFD7XKSA1 Infineon-IPP65R155CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d0be97bab
IPP65R155CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.91 EUR
50+ 3.89 EUR
100+ 3.34 EUR
Mindestbestellmenge: 4
IPP65R090CFD7XKSA1 Infineon-IPP65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef5665e49f0
IPP65R090CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.06 EUR
50+ 6.4 EUR
100+ 5.48 EUR
Mindestbestellmenge: 3
IPP65R060CFD7XKSA1 Infineon-IPP65R060CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951be6b44f1
IPP65R060CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.49 EUR
10+ 7.78 EUR
100+ 5.68 EUR
Mindestbestellmenge: 2
BTT60302ERBXUMA1 Infineon-BTT6030-2ERB-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa51430d86
BTT60302ERBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BTT60501ERAXUMA1 Infineon-BTT6050-1ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa5b7a0d8a
BTT60501ERAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.14 EUR
6000+ 2.06 EUR
Mindestbestellmenge: 3000
BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.27 EUR
10+ 2.94 EUR
25+ 2.78 EUR
100+ 2.37 EUR
250+ 2.22 EUR
500+ 1.94 EUR
1000+ 1.61 EUR
Mindestbestellmenge: 6
BTS70081EPPXUMA1 BTS7008-1EPP_v1.03_4-29-19.pdf
BTS70081EPPXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 2.89 EUR
25+ 2.48 EUR
100+ 2.01 EUR
250+ 1.79 EUR
500+ 1.65 EUR
1000+ 1.54 EUR
Mindestbestellmenge: 4
BTS70081EPAXUMA1 Infineon-BTS7008-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe7f1b8308ad
BTS70081EPAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.34 EUR
Mindestbestellmenge: 3000
BTS5012SDA INFNS15727-1.pdf?t.download=true&u=5oefqw
BTS5012SDA
Hersteller: Infineon Technologies
Description: BTS5012 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
FF450R08A03P2XKSA1 Infineon-FF450R08A03P2-DataSheet-v03_00-EN.pdf?fileId=5546d46273a5366f0173b96a28c32dc0
FF450R08A03P2XKSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+247 EUR
CY7C1168V18-400BZXC
CY7C1168V18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+70.98 EUR
Mindestbestellmenge: 8
PEB8191HDV1.1
PEB8191HDV1.1
Hersteller: Infineon Technologies
Description: INTELLIGENT NTC-Q NETWORK TERMI
auf Bestellung 23301 Stücke:
Lieferzeit 10-14 Tag (e)
PEB8191HV1.1
Hersteller: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 16128 Stücke:
Lieferzeit 10-14 Tag (e)
PEB8191FGDV1.1
Hersteller: Infineon Technologies
Description: NETWORK TERMINATION CONTROLLER
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
MB89663PF-GT-198-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPG20N04S412ATMA1 Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05
IPG20N04S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SPD07N60S5AATMA1 INFNS27107-1.pdf?t.download=true&u=5oefqw
SPD07N60S5AATMA1
Hersteller: Infineon Technologies
Description: SPD07N60S5 - COOL MOS POWER MOSF
Produkt ist nicht verfügbar
SPP20N60C3 INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw
SPP20N60C3
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
ETT480N22P60HPSA1 Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e
ETT480N22P60HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
TLE92783BQXV33XUMA1 Infineon-TLE9278-3BQX%20V33-DataSheet-v01_50-EN.pdf?fileId=5546d462689a790c0168c75d4d546425
TLE92783BQXV33XUMA1
Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TLE9278BQXV33XUMA1 Infineon-TLE9278BQX%20V33-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c78b11316437
TLE9278BQXV33XUMA1
Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
TLE9278BQXXUMA1 Infineon-TLE9278BQX-DataSheet-v01_05-EN.pdf?fileId=5546d462689a790c0168c76f9e44642c
TLE9278BQXXUMA1
Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Produkt ist nicht verfügbar
TLE92783BQXXUMA1 Infineon-TLE9278-3BQX-DataSheet-v01_50-EN.pdf?fileId=5546d462689a790c0168c738ae356420
TLE92783BQXXUMA1
Hersteller: Infineon Technologies
Description: BODY SYSTEM ICS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
TLE8718SAAUMA4 Infineon-TLE8718SA-DS-v01_01-en.pdf?fileId=db3a304339bdde1f0139c4c4cb7c58df
TLE8718SAAUMA4
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CH 1:18 DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:18
Supplier Device Package: PG-DSO-36-54
Fault Protection: Over Temperature, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+8.93 EUR
Mindestbestellmenge: 800
TLE824533SAAUMA1 Infineon-TLE82453-3SA-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d289949d61dff
TLE824533SAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:3 DSO-36
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 6
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 250mOhm (Max)
Voltage - Load: 8V ~ 17V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:3
Supplier Device Package: PG-DSO-36-54
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Not For New Designs
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+20.94 EUR
Mindestbestellmenge: 800
IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
IAUC100N10S5N040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.3 EUR
10+ 3.45 EUR
100+ 2.41 EUR
500+ 1.96 EUR
1000+ 1.81 EUR
2000+ 1.74 EUR
Mindestbestellmenge: 4
BSZ084N08NS5ATMA1 Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb
BSZ084N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 34017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.41 EUR
10+ 2.18 EUR
100+ 1.48 EUR
500+ 1.18 EUR
1000+ 1.08 EUR
2000+ 1 EUR
Mindestbestellmenge: 6
IPB65R600C6 INFNS28015-1.pdf?t.download=true&u=5oefqw
IPB65R600C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPI65R600C6 INFNS28015-1.pdf?t.download=true&u=5oefqw
IPI65R600C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPI65R600C6XKSA1 DS_2156_IPx65R600C6.pdf
IPI65R600C6XKSA1
Hersteller: Infineon Technologies
Description: IPI65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPB65R600C6ATMA1 Infineon-IPD65R600C6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f2ceafdee37c4
IPB65R600C6ATMA1
Hersteller: Infineon Technologies
Description: IPB65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
BGM15MA12E6327XTSA1 BGM15MA12.pdf
BGM15MA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 1.7GHZ-2.2GHZ 12ATSLP
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.7GHz ~ 2.2GHz
RF Type: LTE, W-CDMA
Voltage - Supply: 2.2V ~ 3.3V
Gain: 17dB
Current - Supply: 4.9mA
Noise Figure: 1.8dB
P1dB: -8dBm
Test Frequency: 2.11GHz ~ 2.17GHz
Supplier Device Package: ATSLP-12-3
Part Status: Obsolete
auf Bestellung 252000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
751+0.66 EUR
Mindestbestellmenge: 751
PBL387821QSD
Hersteller: Infineon Technologies
Description: FLEXISLIC SLIC
Packaging: Bulk
Part Status: Active
auf Bestellung 7776 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
75+6.6 EUR
Mindestbestellmenge: 75
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