Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140118) > Seite 435 nach 2336
Foto | Bezeichnung | Hersteller | Beschreibung |
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TC275T64F200WDBKXUMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
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TC275TP64F200WDBLXUMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
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BSZ146N10LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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EVAL1ED3124MX12HTOBO1 | Infineon Technologies |
Description: 1ED3124MX12HTOBO1 DEV KIT+C34 Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED3124MU12H, 1ED3124MC12H Supplied Contents: Board(s) Primary Attributes: Driver with IGBT Power Module, 25A, 600V with 1-Phase Bridge Embedded: Yes, MCU Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1625KV18-250BZXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 16M x 9 DigiKey Programmable: Not Verified |
auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1625KV18-250BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 16M x 9 DigiKey Programmable: Not Verified |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54040LBAXUMA1 | Infineon Technologies |
Description: HSS W/ SERIAL INTERFACE Packaging: Bulk |
auf Bestellung 63989 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS52352GXUMA1 | Infineon Technologies |
Description: BTS5235-2G - SMART HIGH-SIDE POW Packaging: Bulk Part Status: Active |
auf Bestellung 54535 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54040LBBXUMA1 | Infineon Technologies |
Description: HSS W/ SERIAL INTERFACE Packaging: Bulk |
auf Bestellung 47244 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54040LBEXUMA1 | Infineon Technologies |
Description: HSS W/ SERIAL INTERFACE Packaging: Bulk |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54040LBFXUMA1 | Infineon Technologies |
Description: BTS54040 - SPOC SPI POWER CONTRO Packaging: Bulk |
auf Bestellung 38316 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54220LBAXUMA1 | Infineon Technologies |
Description: BTS54220-LBA - SPOC+ SPI POWER C Packaging: Bulk Features: Slew Rate Controlled Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO |
auf Bestellung 2866 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54220LBBXUMA1 | Infineon Technologies |
Description: HSS W/ SERIAL INTERFACE Packaging: Bulk |
auf Bestellung 155790 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS54220LBEXUMA1 | Infineon Technologies |
Description: HSS W/ SERIAL INTERFACE Packaging: Bulk |
auf Bestellung 1563 Stücke: Lieferzeit 10-14 Tag (e) |
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SP12 | Infineon Technologies | Description: IC TIRE PRESSURE SENSOR PDSO-14 |
Produkt ist nicht verfügbar |
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XDPS3301XUMA1 | Infineon Technologies |
Description: XDP SMPS TV/PC PG-DSO-14 Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FX167CI32F20FBBAXT | Infineon Technologies | Description: IC MCU 16BIT 256KB FLASH 144TQFP |
Produkt ist nicht verfügbar |
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ISC0703NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 13A/57A TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V Power Dissipation (Max): 3W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 15µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V |
auf Bestellung 16535 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM25GD120DN2E3224BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A NTC Thermistor: No Supplier Device Package: AG-ECONO2B Part Status: Last Time Buy Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
Produkt ist nicht verfügbar |
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IRG4CC30UB | Infineon Technologies | Description: IGBT CHIP |
Produkt ist nicht verfügbar |
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CYW4356XKWBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA Packaging: Tape & Reel (TR) Package / Case: 395-XFBGA, WLCSP Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 3.3V Power - Output: 19.5dBm Protocol: 802.11a/b/g/n, Bluetooth v4.1 Supplier Device Package: 395-WLCSP (4.87x7.67) GPIO: 16 Modulation: 8DPSK, DQPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, SPI, UART Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYW4339XKWBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUTOOTH 286XFBGA Packaging: Tape & Reel (TR) Package / Case: 286-XFBGA, WLCSP Sensitivity: -95.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 3.3V Power - Output: 13dBm Protocol: 802.11a/b/g/n, Bluetooth v4.1 Current - Receiving: 110mA Data Rate (Max): 3Mbps Current - Transmitting: 340mA Supplier Device Package: 286-WLCSP (4.87x5.41) GPIO: 16 Modulation: 8DPSK, DQPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, SPI, UART Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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BGS12SL6E6327 | Infineon Technologies |
Description: GENERAL PURPOSE SWITCH SPDT Packaging: Bulk Package / Case: 6-XFDFN Impedance: 50Ohm Circuit: SPDT RF Type: GSM, LTE, WCDMA Frequency Range: 100MHz ~ 6GHz Supplier Device Package: TSLP-6-4 IIP3: 65dBm Part Status: Active |
auf Bestellung 4207 Stücke: Lieferzeit 10-14 Tag (e) |
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BGS12AL7-4E6327 | Infineon Technologies |
Description: RF SWITCH Packaging: Bulk Package / Case: 6-XDFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.5dB Frequency Range: 30MHz ~ 3GHz Test Frequency: 2GHz Isolation: 20dB Supplier Device Package: PG-TSLP-7-4 Part Status: Active |
auf Bestellung 39074 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG111N20NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPTG111N20NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V |
auf Bestellung 1776 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG210N25NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTG210N25NM3FDATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC028N04NM5ATMA1 | Infineon Technologies |
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 30µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC028N04NM5ATMA1 | Infineon Technologies |
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 30µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V |
auf Bestellung 10425 Stücke: Lieferzeit 10-14 Tag (e) |
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PX8143HDMG018XTMA1 | Infineon Technologies |
Description: LED PX8143HDMG018XTMA1 Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2ED24427N01FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-900 Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 10A, 10A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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KITAURIXTC224TFTTOBO1 | Infineon Technologies |
Description: EVAL TC224 TFT AURIX Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: TriCore™ Utilized IC / Part: TC224 Platform: AURIX |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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KITAURIXTC265TFTTOBO1 | Infineon Technologies | Description: AURIX APPLICATION KIT TC265 TFT |
Produkt ist nicht verfügbar |
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DHP0070N10N5AUMA1 | Infineon Technologies |
Description: IC GATE DRVR Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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EVALHBPARALLELGANTOBO1 | Infineon Technologies |
Description: EVAL_HB_PARALLELGAN Packaging: Bulk Current - Output: 24A Regulator Topology: Buck-Boost Board Type: Fully Populated Supplied Contents: Board(s) Main Purpose: AC/DC, Non-Isolated Outputs and Type: 1, Non-Isolated |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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IPC60R037P7X7SA1 | Infineon Technologies | Description: MOSFET N-CH HI POWER WAFER |
Produkt ist nicht verfügbar |
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PMB8753AV2.04 | Infineon Technologies |
Description: INFINEON PMB8753AV TELECOM IC - Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMB8787V2.0 | Infineon Technologies |
Description: PMB8787V2.0 TELECOM IC Packaging: Bulk |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2261NV2.0G | Infineon Technologies | Description: SICOFI 2 DUAL CH CODEC FILTER |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF2261NGV2.0 | Infineon Technologies |
Description: SICOFI 2 DUAL CH CODEC FILTER Packaging: Bulk |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2261NV2.0 | Infineon Technologies | Description: SICOFI 2 DUAL CHANNEL CODEC FILT |
auf Bestellung 1091 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF2261NWDGV2.0 | Infineon Technologies |
Description: SICOFI 2 DUAL CH CODEC FILTER Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PEF2261NV2.0 | Infineon Technologies |
Description: SICOFI 2 DUAL CHANNEL CODEC FILT Packaging: Bulk |
auf Bestellung 27371 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC60N06S5N074ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 19µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC60N06S5L073ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 19µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPDQ60R075CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R055CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
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IPDQ60R045CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R035CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ60R022S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP050N10NF2SAKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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DHP1050N10N5AUMA1 | Infineon Technologies |
Description: INT. POWERSTAGE/DRIVER, PG-IQFN- Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Supplier Device Package: PG-IQFN-36-1 Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active |
Produkt ist nicht verfügbar |
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DHP1050N10N5AUMA1 | Infineon Technologies |
Description: INT. POWERSTAGE/DRIVER, PG-IQFN- Packaging: Cut Tape (CT) Package / Case: 36-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Supplier Device Package: PG-IQFN-36-1 Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active |
Produkt ist nicht verfügbar |
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DHP0050N10N5AUMA1 | Infineon Technologies |
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3 Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Supplier Device Package: PG-IQFN-36-1 Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 6A Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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IPU60R1K4C6 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO-251-3-341 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDD60R145CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 24A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
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DDB2U60N12W1RFB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A Current - Reverse Leakage @ Vr: 174 µA @ 1200 V |
Produkt ist nicht verfügbar |
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ISP14EP15LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V |
Produkt ist nicht verfügbar |
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ISP14EP15LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V |
auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) |
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TC275T64F200WDBKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
TC275TP64F200WDBLXUMA1 |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
BSZ146N10LS5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.87 EUR |
EVAL1ED3124MX12HTOBO1 |
Hersteller: Infineon Technologies
Description: 1ED3124MX12HTOBO1 DEV KIT+C34
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3124MU12H, 1ED3124MC12H
Supplied Contents: Board(s)
Primary Attributes: Driver with IGBT Power Module, 25A, 600V with 1-Phase Bridge
Embedded: Yes, MCU
Part Status: Active
Description: 1ED3124MX12HTOBO1 DEV KIT+C34
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3124MU12H, 1ED3124MC12H
Supplied Contents: Board(s)
Primary Attributes: Driver with IGBT Power Module, 25A, 600V with 1-Phase Bridge
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 144.8 EUR |
CY7C1625KV18-250BZXC |
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 16M x 9
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 16M x 9
DigiKey Programmable: Not Verified
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 148.23 EUR |
CY7C1625KV18-250BZXI |
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 16M x 9
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 16M x 9
DigiKey Programmable: Not Verified
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 148.6 EUR |
BTS54040LBAXUMA1 |
auf Bestellung 63989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 3.28 EUR |
BTS52352GXUMA1 |
Hersteller: Infineon Technologies
Description: BTS5235-2G - SMART HIGH-SIDE POW
Packaging: Bulk
Part Status: Active
Description: BTS5235-2G - SMART HIGH-SIDE POW
Packaging: Bulk
Part Status: Active
auf Bestellung 54535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
133+ | 3.55 EUR |
BTS54040LBBXUMA1 |
auf Bestellung 47244 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
133+ | 3.64 EUR |
BTS54040LBEXUMA1 |
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
133+ | 3.64 EUR |
BTS54040LBFXUMA1 |
auf Bestellung 38316 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
111+ | 4.38 EUR |
BTS54220LBAXUMA1 |
Hersteller: Infineon Technologies
Description: BTS54220-LBA - SPOC+ SPI POWER C
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Description: BTS54220-LBA - SPOC+ SPI POWER C
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
108+ | 4.53 EUR |
BTS54220LBBXUMA1 |
auf Bestellung 155790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
94+ | 5.15 EUR |
BTS54220LBEXUMA1 |
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
89+ | 5.44 EUR |
SP12 |
Hersteller: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
Description: IC TIRE PRESSURE SENSOR PDSO-14
Produkt ist nicht verfügbar
XDPS3301XUMA1 |
Hersteller: Infineon Technologies
Description: XDP SMPS TV/PC PG-DSO-14
Packaging: Tape & Reel (TR)
Part Status: Active
Description: XDP SMPS TV/PC PG-DSO-14
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 3.5 EUR |
FX167CI32F20FBBAXT |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Produkt ist nicht verfügbar
ISC0703NLSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Description: MOSFET N-CH 60V 13A/57A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 32A, 10V
Power Dissipation (Max): 3W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 15µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 16535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.41 EUR |
12+ | 1.53 EUR |
100+ | 1.02 EUR |
500+ | 0.8 EUR |
1000+ | 0.73 EUR |
2000+ | 0.67 EUR |
BSM25GD120DN2E3224BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
CYW4356XKWBGT |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUTOOTH 395XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 395-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 19.5dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 395-WLCSP (4.87x7.67)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW4339XKWBGT |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 286XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 286-XFBGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 286-WLCSP (4.87x5.41)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUTOOTH 286XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 286-XFBGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 286-WLCSP (4.87x5.41)
GPIO: 16
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BGS12SL6E6327 |
Hersteller: Infineon Technologies
Description: GENERAL PURPOSE SWITCH SPDT
Packaging: Bulk
Package / Case: 6-XFDFN
Impedance: 50Ohm
Circuit: SPDT
RF Type: GSM, LTE, WCDMA
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: TSLP-6-4
IIP3: 65dBm
Part Status: Active
Description: GENERAL PURPOSE SWITCH SPDT
Packaging: Bulk
Package / Case: 6-XFDFN
Impedance: 50Ohm
Circuit: SPDT
RF Type: GSM, LTE, WCDMA
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: TSLP-6-4
IIP3: 65dBm
Part Status: Active
auf Bestellung 4207 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2251+ | 0.21 EUR |
BGS12AL7-4E6327 |
Hersteller: Infineon Technologies
Description: RF SWITCH
Packaging: Bulk
Package / Case: 6-XDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Test Frequency: 2GHz
Isolation: 20dB
Supplier Device Package: PG-TSLP-7-4
Part Status: Active
Description: RF SWITCH
Packaging: Bulk
Package / Case: 6-XDFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.5dB
Frequency Range: 30MHz ~ 3GHz
Test Frequency: 2GHz
Isolation: 20dB
Supplier Device Package: PG-TSLP-7-4
Part Status: Active
auf Bestellung 39074 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1731+ | 0.3 EUR |
IPTG111N20NM3FDATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Produkt ist nicht verfügbar
IPTG111N20NM3FDATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 96A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 100 V
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.16 EUR |
10+ | 8.67 EUR |
100+ | 6.61 EUR |
500+ | 6.53 EUR |
IPTG210N25NM3FDATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 7.36 EUR |
IPTG210N25NM3FDATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Description: TRENCH >=100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.99 EUR |
10+ | 11.13 EUR |
100+ | 9.27 EUR |
500+ | 8.18 EUR |
ISC028N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.69 EUR |
ISC028N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.13 EUR |
13+ | 1.44 EUR |
100+ | 1.01 EUR |
500+ | 0.82 EUR |
1000+ | 0.75 EUR |
2000+ | 0.7 EUR |
PX8143HDMG018XTMA1 |
Hersteller: Infineon Technologies
Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Description: LED PX8143HDMG018XTMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
2ED24427N01FXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-900
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 10A, 10A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-900
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 10A, 10A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
KITAURIXTC224TFTTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL TC224 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC224
Platform: AURIX
Description: EVAL TC224 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC224
Platform: AURIX
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 344.56 EUR |
KITAURIXTC265TFTTOBO1 |
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC265 TFT
Description: AURIX APPLICATION KIT TC265 TFT
Produkt ist nicht verfügbar
DHP0070N10N5AUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
EVALHBPARALLELGANTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL_HB_PARALLELGAN
Packaging: Bulk
Current - Output: 24A
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1, Non-Isolated
Description: EVAL_HB_PARALLELGAN
Packaging: Bulk
Current - Output: 24A
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1, Non-Isolated
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 233.55 EUR |
IPC60R037P7X7SA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER WAFER
Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
PMB8753AV2.04 |
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 8.18 EUR |
PMB8787V2.0 |
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 9.16 EUR |
PEB2261NV2.0G |
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CH CODEC FILTER
Description: SICOFI 2 DUAL CH CODEC FILTER
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)PEF2261NGV2.0 |
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 24.39 EUR |
PEB2261NV2.0 |
Hersteller: Infineon Technologies
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
Description: SICOFI 2 DUAL CHANNEL CODEC FILT
auf Bestellung 1091 Stücke:
Lieferzeit 10-14 Tag (e)PEF2261NWDGV2.0 |
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 26.95 EUR |
PEF2261NV2.0 |
auf Bestellung 27371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 27.09 EUR |
IAUC60N06S5N074ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IAUC60N06S5L073ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPDQ60R075CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 6.02 EUR |
IPDQ60R055CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
IPDQ60R045CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 8.16 EUR |
IPDQ60R035CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 8.67 EUR |
IPDQ60R022S7XTMA1 |
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 11.63 EUR |
IPP050N10NF2SAKMA1 |
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.97 EUR |
50+ | 1.61 EUR |
DHP1050N10N5AUMA1 |
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
DHP1050N10N5AUMA1 |
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Description: INT. POWERSTAGE/DRIVER, PG-IQFN-
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
Produkt ist nicht verfügbar
DHP0050N10N5AUMA1 |
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Description: INT. POWERSTAGE/DRIVER PG-IQFN-3
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-IQFN-36-1
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Not For New Designs
Produkt ist nicht verfügbar
IPU60R1K4C6 |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1072+ | 0.49 EUR |
IPDD60R145CFD7XTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1700+ | 2.59 EUR |
DDB2U60N12W1RFB11BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 174 µA @ 1200 V
Produkt ist nicht verfügbar
ISP14EP15LMXTSA1 |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Produkt ist nicht verfügbar
ISP14EP15LMXTSA1 |
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), 1.29A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 800mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 75 V
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
25+ | 0.71 EUR |
28+ | 0.63 EUR |
100+ | 0.54 EUR |
250+ | 0.5 EUR |
500+ | 0.47 EUR |