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ISC028N04NM5ATMA1

ISC028N04NM5ATMA1 Infineon Technologies

Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Hersteller: Infineon Technologies
Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.72 EUR
Mindestbestellmenge: 5000
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Technische Details ISC028N04NM5ATMA1 Infineon Technologies

Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 30µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V.

Weitere Produktangebote ISC028N04NM5ATMA1 nach Preis ab 0.79 EUR bis 2.8 EUR

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ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Hersteller : Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN-1825714.pdf MOSFET TRENCH <= 40V
auf Bestellung 4149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.68 EUR
10+ 2.34 EUR
100+ 1.83 EUR
500+ 1.54 EUR
1000+ 1.19 EUR
2500+ 1.13 EUR
5000+ 1.08 EUR
Mindestbestellmenge: 2
ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Hersteller : Infineon Technologies Infineon-ISC028N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e46db8000a Description: 40V 2.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 10425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.8 EUR
10+ 1.77 EUR
100+ 1.19 EUR
500+ 0.94 EUR
1000+ 0.86 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 7
ISC028N04NM5ATMA1 ISC028N04NM5ATMA1 Hersteller : Infineon Technologies infineon-isc028n04nm5-datasheet-v02_01-en.pdf Trans MOSFET N-CH 40V 24A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)