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BFP540E6327BTSA1 BFP540E6327BTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
BFP540ESDE6327HTSA1 BFP540ESDE6327HTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
BFP540ESDE6327HTSA1 BFP540ESDE6327HTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
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2500+2.03 EUR
Mindestbestellmenge: 2500
IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 3076 Stücke:
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4+4.52 EUR
10+ 3.75 EUR
100+ 2.98 EUR
500+ 2.52 EUR
1000+ 2.14 EUR
Mindestbestellmenge: 4
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R145CFD7ATMA1 IPD60R145CFD7ATMA1 Infineon Technologies Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.17 EUR
5000+ 2.09 EUR
Mindestbestellmenge: 2500
IPD60R145CFD7ATMA1 IPD60R145CFD7ATMA1 Infineon Technologies Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 6137 Stücke:
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4+4.47 EUR
10+ 3.75 EUR
100+ 3.03 EUR
500+ 2.7 EUR
1000+ 2.31 EUR
Mindestbestellmenge: 4
IPB60R199CP Infineon Technologies Description: IPB60R199CP
auf Bestellung 339 Stücke:
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BSP321PL6327 BSP321PL6327 Infineon Technologies INFNS15380-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
auf Bestellung 38030 Stücke:
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1154+0.43 EUR
Mindestbestellmenge: 1154
REFDAB11KIZSICSYSTOBO1 REFDAB11KIZSICSYSTOBO1 Infineon Technologies Infineon-UG-2020-31_REF_DAB11KIZSICSYS-UserManual-v01_01-EN.pdf?fileId=5546d46276fb756a0177060f64a829de Description: REFERENCE BOARD
Packaging: Bulk
Voltage - Input: 750V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IMBF170R1K0M1, IMZ120R030M1H, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 11 kW
auf Bestellung 20 Stücke:
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1+2869.2 EUR
FZ1200R17KE3B2NOSA1 Infineon Technologies FZ1200R17KE3_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Produkt ist nicht verfügbar
BAT54B5003 BAT54B5003 Infineon Technologies INFNS09503-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.033 EUR
Mindestbestellmenge: 13172
IRF3717HR Infineon Technologies Description: IRF3717HR
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
BC847B-B5003 BC847B-B5003 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
13172+0.031 EUR
Mindestbestellmenge: 13172
KP253XTMA2 KP253XTMA2 Infineon Technologies KP253.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
KP253XTMA2 KP253XTMA2 Infineon Technologies KP253.pdf Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2561 Stücke:
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2+10.35 EUR
10+ 8.28 EUR
25+ 7.66 EUR
100+ 6.62 EUR
500+ 6.21 EUR
Mindestbestellmenge: 2
EVALICB2FL03GTOBO1 Infineon Technologies Infineon-Lighting_ballast_controller_IC_design_54W_UV_C_disinfection_lamp_ICB2FL03G-ApplicationNotes-v01_01-EN.pdf?fileId=db3a304331c8f8560131d28a549d0675 Description: EVAL KIT
Produkt ist nicht verfügbar
BGSA143GL10E6327XTSA1 BGSA143GL10E6327XTSA1 Infineon Technologies Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9 Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 42V
Frequency Range: 6GHz
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Produkt ist nicht verfügbar
PVAZ172NS-TPBF PVAZ172NS-TPBF Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 1 A
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 8190 Stücke:
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33+14.46 EUR
Mindestbestellmenge: 33
PVAZ172 PVAZ172 Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Produkt ist nicht verfügbar
IPP50R520CPXKSA1 IPP50R520CPXKSA1 Infineon Technologies Infineon-IPP50R520CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123854bec2a6712 Description: MOSFET N-CH 500V 7.1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 9318 Stücke:
Lieferzeit 10-14 Tag (e)
415+1.19 EUR
Mindestbestellmenge: 415
IPP50R350CP IPP50R350CP Infineon Technologies INFNS17740-1.pdf?t.download=true&u=5oefqw Description: COOLMOS 10A, 500V N-CHANNEL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
376+1.42 EUR
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IPP50R299CPXKSA1 IPP50R299CPXKSA1 Infineon Technologies Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
313+1.58 EUR
Mindestbestellmenge: 313
IPP50N12S3LAKSA1 IPP50N12S3LAKSA1 Infineon Technologies Infineon-IPP_B_I50N12S3L-15-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9b3517ffa Description: OPTIMOS POWER-TRANSISTOR
auf Bestellung 500 Stücke:
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500+1.41 EUR
Mindestbestellmenge: 500
IPP50R399CP IPP50R399CP Infineon Technologies INFNS17023-1.pdf?t.download=true&u=5oefqw Description: IPP50R399 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
FS50R12KT4B11BOSA1 FS50R12KT4B11BOSA1 Infineon Technologies Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121 Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
BSS606NH6327 BSS606NH6327 Infineon Technologies INFNS26386-1.pdf?t.download=true&u=5oefqw Description: BSS606 - 250V-600V SMALL SIGNAL
auf Bestellung 350865 Stücke:
Lieferzeit 10-14 Tag (e)
TT320N18SOFHPSA1 TT320N18SOFHPSA1 Infineon Technologies Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea Description: SCR MODULE 1800V 520A MODULE
Produkt ist nicht verfügbar
IPG20N04S412AATMA1 IPG20N04S412AATMA1 Infineon Technologies INFNS28023-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.75 EUR
Mindestbestellmenge: 5000
FD401R17KF6C_B2 Infineon Technologies FD401R17KF6C_B2.pdf Description: IGBT MOD 1700V 650A 3150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Produkt ist nicht verfügbar
CYUSB3314-BVXI CYUSB3314-BVXI Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 100BGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.64 EUR
10+ 15.7 EUR
25+ 14.47 EUR
80+ 13.29 EUR
429+ 12.14 EUR
858+ 11.81 EUR
1287+ 11.64 EUR
IDL12G65C5XUMA2 IDL12G65C5XUMA2 Infineon Technologies Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28 Description: DIODE SIL CARB 650V 12A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 6181 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.04 EUR
10+ 6.75 EUR
100+ 5.46 EUR
500+ 4.85 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 3
SPA20N65C3XK SPA20N65C3XK Infineon Technologies Infineon-SPP_A_I20N65C3-DS-v03_00-en.pdf?fileId=db3a304314dca389011536a41121152a Description: SPA20N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
88+5.47 EUR
Mindestbestellmenge: 88
IPB049N08N5ATMA1 IPB049N08N5ATMA1 Infineon Technologies INFN-S-A0000250420-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
Produkt ist nicht verfügbar
PEB 3331 HT V2.2 PEB 3331 HT V2.2 Infineon Technologies VINETIC_CPE.pdf Description: IC TELECOM INTERFACE TQFP-100
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Number of Circuits: 1
Produkt ist nicht verfügbar
PEB 3341 F V2.2 PEB 3341 F V2.2 Infineon Technologies VINETIC_CPE.pdf Description: IC TELECOM INTERFACE TQFP-100
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Number of Circuits: 1
Produkt ist nicht verfügbar
DD231N20KHPSA1 DD231N20KHPSA1 Infineon Technologies DD231N.pdf Description: DIODE MODULE GP 2000V 261A
Produkt ist nicht verfügbar
IRS2301STRPBF IRS2301STRPBF Infineon Technologies IRSDS10790-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.85 EUR
Mindestbestellmenge: 2500
IRLR8103V IRLR8103V Infineon Technologies irlr8103v.pdf Description: MOSFET N-CH 30V 91A DPAK
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
2SD300C17A4HPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
SAB-C167CR-LM-GAT Infineon Technologies Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
FZ1600R33HE4BPSA1 FZ1600R33HE4BPSA1 Infineon Technologies Infineon-FZ1600R33HE4-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d6f880592 Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 3600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+2817.95 EUR
IRFC4019EB Infineon Technologies Description: MOSFET N-CH 150V 17A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
FS150R12N2T7BPSA1 FS150R12N2T7BPSA1 Infineon Technologies Infineon-FS150R12N2T7-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b0ae29ea2712b Description: LOW POWER ECONO AG-ECONO2-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+218.7 EUR
10+ 210.69 EUR
REFDR3KIMBGSICMATOBO1 REFDR3KIMBGSICMATOBO1 Infineon Technologies Infineon-UG_2020_32_REF-DR3KIMBGSICMA-UserManual-v01_00-EN.pdf?fileId=5546d46277f2a31c0177f875d2b85321 Description: REF DES KIT
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 1EDI20I12MH
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Isolated
Embedded: No
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+836.46 EUR
BAS40E6433HTMA1 BAS40E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
IRFR48ZTRPBF IRFR48ZTRPBF Infineon Technologies irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.79 EUR
Mindestbestellmenge: 2000
IRFR48ZTRPBF IRFR48ZTRPBF Infineon Technologies irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 4233 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.39 EUR
11+ 1.62 EUR
100+ 1.14 EUR
500+ 0.92 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 8
FB20R06KL4B1BOMA1 Infineon Technologies Description: IGBT MODULE LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
TLD55421QVXUMA1 Infineon Technologies Infineon-TLD5542-1QV-DataSheet-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016ff1ac705d4601 Description: IC LED DRVR CTRL PWM 90MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 2V ~ 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 55V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLD55421QVXUMA1 Infineon Technologies Infineon-TLD5542-1QV-DataSheet-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016ff1ac705d4601 Description: IC LED DRVR CTRL PWM 90MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 2V ~ 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 55V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.29 EUR
10+ 3.87 EUR
25+ 3.66 EUR
100+ 3.17 EUR
250+ 3.01 EUR
500+ 2.86 EUR
Mindestbestellmenge: 5
TDA38827AUMA1 TDA38827AUMA1 Infineon Technologies Infineon-TDA38827-DataSheet-v01_00-EN.pdf?fileId=5546d462766cbe8601767300e600523f Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar
TDA38827AUMA1 TDA38827AUMA1 Infineon Technologies Infineon-TDA38827-DataSheet-v01_00-EN.pdf?fileId=5546d462766cbe8601767300e600523f Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 1263 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.39 EUR
10+ 5.74 EUR
25+ 5.43 EUR
100+ 4.71 EUR
250+ 4.46 EUR
500+ 4.01 EUR
1000+ 3.38 EUR
Mindestbestellmenge: 3
CY7C1470V33-200AXC CY7C1470V33-200AXC Infineon Technologies Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 72MBIT PARALLEL 100TQFP
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
3+221.02 EUR
Mindestbestellmenge: 3
AUXNSF2804STRL7P Infineon Technologies Description: MOSFET N-CH
Produkt ist nicht verfügbar
98-0283 98-0283 Infineon Technologies IPS042G.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 530mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature
Produkt ist nicht verfügbar
BTT3018EJXUMA1 BTT3018EJXUMA1 Infineon Technologies Infineon-BTT3018EJ-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016ff157937b4290 Description: BTT3018EJXUMA1
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
auf Bestellung 2435 Stücke:
Lieferzeit 10-14 Tag (e)
ISZ0702NLSATMA1 ISZ0702NLSATMA1 Infineon Technologies Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Produkt ist nicht verfügbar
ISZ0702NLSATMA1 ISZ0702NLSATMA1 Infineon Technologies Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 7520 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+ 1.79 EUR
100+ 1.2 EUR
500+ 0.95 EUR
1000+ 0.87 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 7
BFP540E6327BTSA1 Part_Number_Guide_Web.pdf
BFP540E6327BTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
BFP540ESDE6327HTSA1 Part_Number_Guide_Web.pdf
BFP540ESDE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
BFP540ESDE6327HTSA1 Part_Number_Guide_Web.pdf
BFP540ESDE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.03 EUR
Mindestbestellmenge: 2500
IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: DPAK (TO-252)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 3076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.52 EUR
10+ 3.75 EUR
100+ 2.98 EUR
500+ 2.52 EUR
1000+ 2.14 EUR
Mindestbestellmenge: 4
IPD60R1K0PFD7SAUMA1 Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef
IPD60R1K0PFD7SAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R145CFD7ATMA1 Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d
IPD60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.17 EUR
5000+ 2.09 EUR
Mindestbestellmenge: 2500
IPD60R145CFD7ATMA1 Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d
IPD60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 6137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.47 EUR
10+ 3.75 EUR
100+ 3.03 EUR
500+ 2.7 EUR
1000+ 2.31 EUR
Mindestbestellmenge: 4
IPB60R199CP
Hersteller: Infineon Technologies
Description: IPB60R199CP
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
BSP321PL6327 INFNS15380-1.pdf?t.download=true&u=5oefqw
BSP321PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
auf Bestellung 38030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1154+0.43 EUR
Mindestbestellmenge: 1154
REFDAB11KIZSICSYSTOBO1 Infineon-UG-2020-31_REF_DAB11KIZSICSYS-UserManual-v01_01-EN.pdf?fileId=5546d46276fb756a0177060f64a829de
REFDAB11KIZSICSYSTOBO1
Hersteller: Infineon Technologies
Description: REFERENCE BOARD
Packaging: Bulk
Voltage - Input: 750V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IMBF170R1K0M1, IMZ120R030M1H, XMC4400
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 11 kW
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2869.2 EUR
FZ1200R17KE3B2NOSA1 FZ1200R17KE3_B2_Rev2.1_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Produkt ist nicht verfügbar
BAT54B5003 INFNS09503-1.pdf?t.download=true&u=5oefqw
BAT54B5003
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.033 EUR
Mindestbestellmenge: 13172
IRF3717HR
Hersteller: Infineon Technologies
Description: IRF3717HR
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
BC847B-B5003 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847B-B5003
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13172+0.031 EUR
Mindestbestellmenge: 13172
KP253XTMA2 KP253.pdf
KP253XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Produkt ist nicht verfügbar
KP253XTMA2 KP253.pdf
KP253XTMA2
Hersteller: Infineon Technologies
Description: IC ANLG BAROMETRIC SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.35 EUR
10+ 8.28 EUR
25+ 7.66 EUR
100+ 6.62 EUR
500+ 6.21 EUR
Mindestbestellmenge: 2
EVALICB2FL03GTOBO1 Infineon-Lighting_ballast_controller_IC_design_54W_UV_C_disinfection_lamp_ICB2FL03G-ApplicationNotes-v01_01-EN.pdf?fileId=db3a304331c8f8560131d28a549d0675
Hersteller: Infineon Technologies
Description: EVAL KIT
Produkt ist nicht verfügbar
BGSA143GL10E6327XTSA1 Infineon-BGSA143GL10-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dde5887c33cb9
BGSA143GL10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 42V
Frequency Range: 6GHz
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Produkt ist nicht verfügbar
PVAZ172NS-TPBF pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172NS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 1 A
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 8190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+14.46 EUR
Mindestbestellmenge: 33
PVAZ172 pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Produkt ist nicht verfügbar
IPP50R520CPXKSA1 Infineon-IPP50R520CP-DS-v02_00-en.pdf?fileId=db3a30432313ff5e0123854bec2a6712
IPP50R520CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 9318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
415+1.19 EUR
Mindestbestellmenge: 415
IPP50R350CP INFNS17740-1.pdf?t.download=true&u=5oefqw
IPP50R350CP
Hersteller: Infineon Technologies
Description: COOLMOS 10A, 500V N-CHANNEL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
376+1.42 EUR
Mindestbestellmenge: 376
IPP50R299CPXKSA1 Infineon-IPP50R299CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e0123852caf2b65fc
IPP50R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
313+1.58 EUR
Mindestbestellmenge: 313
IPP50N12S3LAKSA1 Infineon-IPP_B_I50N12S3L-15-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9b3517ffa
IPP50N12S3LAKSA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER-TRANSISTOR
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+1.41 EUR
Mindestbestellmenge: 500
IPP50R399CP INFNS17023-1.pdf?t.download=true&u=5oefqw
IPP50R399CP
Hersteller: Infineon Technologies
Description: IPP50R399 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
FS50R12KT4B11BOSA1 Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121
FS50R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Produkt ist nicht verfügbar
BSS606NH6327 INFNS26386-1.pdf?t.download=true&u=5oefqw
BSS606NH6327
Hersteller: Infineon Technologies
Description: BSS606 - 250V-600V SMALL SIGNAL
auf Bestellung 350865 Stücke:
Lieferzeit 10-14 Tag (e)
TT320N18SOFHPSA1 Infineon-TT320N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e572e77eea
TT320N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 520A MODULE
Produkt ist nicht verfügbar
IPG20N04S412AATMA1 INFNS28023-1.pdf?t.download=true&u=5oefqw
IPG20N04S412AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.75 EUR
Mindestbestellmenge: 5000
FD401R17KF6C_B2 FD401R17KF6C_B2.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 650A 3150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Produkt ist nicht verfügbar
CYUSB3314-BVXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-BVXI
Hersteller: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 100BGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.64 EUR
10+ 15.7 EUR
25+ 14.47 EUR
80+ 13.29 EUR
429+ 12.14 EUR
858+ 11.81 EUR
1287+ 11.64 EUR
IDL12G65C5XUMA2 Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28
IDL12G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 6181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.04 EUR
10+ 6.75 EUR
100+ 5.46 EUR
500+ 4.85 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 3
SPA20N65C3XK Infineon-SPP_A_I20N65C3-DS-v03_00-en.pdf?fileId=db3a304314dca389011536a41121152a
SPA20N65C3XK
Hersteller: Infineon Technologies
Description: SPA20N65 - 650V AND 700V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
88+5.47 EUR
Mindestbestellmenge: 88
IPB049N08N5ATMA1 INFN-S-A0000250420-1.pdf?t.download=true&u=5oefqw
IPB049N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 66µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 40 V
Produkt ist nicht verfügbar
PEB 3331 HT V2.2 VINETIC_CPE.pdf
PEB 3331 HT V2.2
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-100
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Number of Circuits: 1
Produkt ist nicht verfügbar
PEB 3341 F V2.2 VINETIC_CPE.pdf
PEB 3341 F V2.2
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-100
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Number of Circuits: 1
Produkt ist nicht verfügbar
DD231N20KHPSA1 DD231N.pdf
DD231N20KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2000V 261A
Produkt ist nicht verfügbar
IRS2301STRPBF IRSDS10790-1.pdf?t.download=true&u=5oefqw
IRS2301STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
Mindestbestellmenge: 2500
IRLR8103V irlr8103v.pdf
IRLR8103V
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
2SD300C17A4HPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
SAB-C167CR-LM-GAT
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
FZ1600R33HE4BPSA1 Infineon-FZ1600R33HE4-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d6f880592
FZ1600R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 3600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2817.95 EUR
IRFC4019EB
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 17A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
FS150R12N2T7BPSA1 Infineon-FS150R12N2T7-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017b0ae29ea2712b
FS150R12N2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+218.7 EUR
10+ 210.69 EUR
REFDR3KIMBGSICMATOBO1 Infineon-UG_2020_32_REF-DR3KIMBGSICMA-UserManual-v01_00-EN.pdf?fileId=5546d46277f2a31c0177f875d2b85321
REFDR3KIMBGSICMATOBO1
Hersteller: Infineon Technologies
Description: REF DES KIT
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 1EDI20I12MH
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Isolated
Embedded: No
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+836.46 EUR
BAS40E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
IRFR48ZTRPBF irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa
IRFR48ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.79 EUR
Mindestbestellmenge: 2000
IRFR48ZTRPBF irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa
IRFR48ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 4233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.39 EUR
11+ 1.62 EUR
100+ 1.14 EUR
500+ 0.92 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 8
FB20R06KL4B1BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR EASY2-1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
TLD55421QVXUMA1 Infineon-TLD5542-1QV-DataSheet-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016ff1ac705d4601
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRL PWM 90MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 2V ~ 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 55V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLD55421QVXUMA1 Infineon-TLD5542-1QV-DataSheet-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016ff1ac705d4601
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRL PWM 90MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 2V ~ 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-VQFN-48-31
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 55V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.29 EUR
10+ 3.87 EUR
25+ 3.66 EUR
100+ 3.17 EUR
250+ 3.01 EUR
500+ 2.86 EUR
Mindestbestellmenge: 5
TDA38827AUMA1 Infineon-TDA38827-DataSheet-v01_00-EN.pdf?fileId=5546d462766cbe8601767300e600523f
TDA38827AUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar
TDA38827AUMA1 Infineon-TDA38827-DataSheet-v01_00-EN.pdf?fileId=5546d462766cbe8601767300e600523f
TDA38827AUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 25A 22IQFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-22-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 1263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.39 EUR
10+ 5.74 EUR
25+ 5.43 EUR
100+ 4.71 EUR
250+ 4.46 EUR
500+ 4.01 EUR
1000+ 3.38 EUR
Mindestbestellmenge: 3
CY7C1470V33-200AXC Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
CY7C1470V33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+221.02 EUR
Mindestbestellmenge: 3
AUXNSF2804STRL7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Produkt ist nicht verfügbar
98-0283 IPS042G.pdf
98-0283
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 530mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature
Produkt ist nicht verfügbar
BTT3018EJXUMA1 Infineon-BTT3018EJ-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016ff157937b4290
BTT3018EJXUMA1
Hersteller: Infineon Technologies
Description: BTT3018EJXUMA1
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
auf Bestellung 2435 Stücke:
Lieferzeit 10-14 Tag (e)
ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
ISZ0702NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Produkt ist nicht verfügbar
ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
ISZ0702NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 7520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.8 EUR
10+ 1.79 EUR
100+ 1.2 EUR
500+ 0.95 EUR
1000+ 0.87 EUR
2000+ 0.8 EUR
Mindestbestellmenge: 7
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