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IPD60R1K0PFD7SAUMA1

IPD60R1K0PFD7SAUMA1 Infineon Technologies


Infineon_IPD60R1K0PFD7S_DataSheet_v02_00_EN-1759718.pdf Hersteller: Infineon Technologies
MOSFET CONSUMER
auf Bestellung 715 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.36 EUR
10+ 1.18 EUR
100+ 0.82 EUR
500+ 0.7 EUR
1000+ 0.58 EUR
2500+ 0.52 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 3
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Technische Details IPD60R1K0PFD7SAUMA1 Infineon Technologies

Description: CONSUMER PG-TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V.

Weitere Produktangebote IPD60R1K0PFD7SAUMA1 nach Preis ab 0.81 EUR bis 1.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.36 EUR
16+ 1.17 EUR
100+ 0.81 EUR
Mindestbestellmenge: 13
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Hersteller : Infineon Technologies infineon-ipd60r1k0pfd7s-datasheet-v02_00-en.pdf Trans MOSFET N-CH 600V 4.7A T/R
Produkt ist nicht verfügbar
IPD60R1K0PFD7SAUMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef IPD60R1K0PFD7S SMD N channel transistors
Produkt ist nicht verfügbar
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar