Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140125) > Seite 427 nach 2336
Foto | Bezeichnung | Hersteller | Beschreibung |
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TLE7469GV52 | Infineon Technologies | Description: IC REG LINEAR VOLT TLE7469 |
Produkt ist nicht verfügbar |
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TLE71851EXUMA1 | Infineon Technologies | Description: TLE7185 - GATE DRIVER |
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TLE7189F | Infineon Technologies | Description: TLE7189 - GATE DRIVER |
Produkt ist nicht verfügbar |
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TLE72722EXUMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA SSOP-14-EP Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 30 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 40 µA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE72722EXUMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA SSOP-14-EP Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 30 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 40 µA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4255 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE82422LXUMA2 | Infineon Technologies |
Description: IC CURRENT SOURCE 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Sensing Method: Low-Side Mounting Type: Surface Mount Function: Current Source Voltage - Input: 5.5V ~ 42V Operating Temperature: -40°C ~ 150°C Supplier Device Package: PG-LQFP-64-4 Part Status: Active |
Produkt ist nicht verfügbar |
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PEB4265TV1.1GD | Infineon Technologies |
Description: DUSLIC DUAL CHANNEL SLIC Packaging: Bulk |
auf Bestellung 18400 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT5402LRHE6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTT 30V 200MA TSLP-2-7 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-TSLP-2-7 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
Produkt ist nicht verfügbar |
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MB4213PF-G-BND-JN-ERE1 | Infineon Technologies |
Description: IC SUPERVISOR REG DC/DC 14SOP Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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63-8035 | Infineon Technologies | Description: IGBT CHIP |
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IPB200N15N3 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V |
Produkt ist nicht verfügbar |
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IPB200N15N3G | Infineon Technologies | Description: IPB200N15 - 12V-300V N-CHANNEL P |
Produkt ist nicht verfügbar |
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IPI200N15N3 G | Infineon Technologies |
Description: MOSFET N-CH 150V 50A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V |
Produkt ist nicht verfügbar |
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BTS5016-1EKB | Infineon Technologies |
Description: BTS5016 - PROFET - SMART HIGH SI Features: Slew Rate Controlled Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 16mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-30 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
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BTS50161EKBXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14 Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 16mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
auf Bestellung 91616 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9872QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWER Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE987x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM50GX120DN2BOSA1 | Infineon Technologies |
Description: IGBT MODULE 2 LOW PWR ECONO2-2 Packaging: Tray |
Produkt ist nicht verfügbar |
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BTS781GP | Infineon Technologies | Description: BRUSH DC MOTOR CONTROLLER |
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IPW65R660CFDFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V |
auf Bestellung 14517 Stücke: Lieferzeit 10-14 Tag (e) |
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IM818MCCXKMA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 16A 24PWRDIP Packaging: Tube Package / Case: 24-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Part Status: Active Current: 16 A Voltage: 1.2 kV |
auf Bestellung 639 Stücke: Lieferzeit 10-14 Tag (e) |
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TDA21470AUMA1 | Infineon Technologies |
Description: IC INTEG PWR STAGES IQFN-39 Packaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: Integrated Power Stages Supplier Device Package: PG-IQFN-39 Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TDA21470AUMA1 | Infineon Technologies |
Description: IC INTEG PWR STAGES IQFN-39 Packaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: Integrated Power Stages Supplier Device Package: PG-IQFN-39 Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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EVALPFC5KIKWWR5SYSTOBO1 | Infineon Technologies |
Description: EVAL BOARD Packaging: Bulk Function: Power Factor Correction Type: Power Management Utilized IC / Part: IKW40N65WR5, IDW60C65D1, 1ED44175 Supplied Contents: Board(s) Primary Attributes: 180 ~ 264VAC Input Embedded: No Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA80R460CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 800V 10.8A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 680µA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS7004E6433HTMA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V 70MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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IPD60R600PFD7SAUMA1 | Infineon Technologies |
Description: CONSUMER PG-TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPD60R600PFD7SAUMA1 | Infineon Technologies |
Description: CONSUMER PG-TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
auf Bestellung 4709 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16SH6727XTSA1 | Infineon Technologies | Description: RECTIFIER DIODE |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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PX3746DDQSM1383XUMA1 | Infineon Technologies |
Description: LED PX3746DDQSM1383XUMA1 Packaging: Tray Part Status: Obsolete |
Produkt ist nicht verfügbar |
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S25FL064P0XBHV020 | Infineon Technologies | Description: IC FLASH 64MBIT 104MHZ 24BGA |
auf Bestellung 338 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUT165N08S5N029ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 165A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V |
Produkt ist nicht verfügbar |
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SAF-XC164LM-16F20F BA | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-LQFP-64-4 Number of I/O: 47 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SAF-XC164LM-16F40F BA | Infineon Technologies | Description: IC MCU 16BIT 128KB FLASH 64LQFP |
Produkt ist nicht verfügbar |
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BTS5020-1EKA | Infineon Technologies |
Description: BTS5020 - PROFET - SMART HIGH SI Packaging: Bulk Features: Slew Rate Controlled Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-30 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active |
Produkt ist nicht verfügbar |
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IRF8714TRPBF-1 | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
Produkt ist nicht verfügbar |
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DD261N20KHPSA1 | Infineon Technologies | Description: DIODE MODULE GP 2000V 260A |
Produkt ist nicht verfügbar |
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ND261N20KHPSA1 | Infineon Technologies | Description: DIODE GP 2KV 260A BG-PB50ND-1 |
Produkt ist nicht verfügbar |
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ITS42K5DLDFXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH P-CHAN 1:1 TSON10 Packaging: Cut Tape (CT) Package / Case: 10-TFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 2.5Ohm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 250mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-10-2 Fault Protection: Over Temperature, UVLO Part Status: Not For New Designs |
auf Bestellung 124184 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9877QTW40XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48TQFP Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: ARM® Cortex®-M0 Data Converters: A/D 5x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V Connectivity: LINbus, SPI, SSC, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9012AQUXUMA1 | Infineon Technologies |
Description: IC BATT BALANCER 12CELL Packaging: Cut Tape (CT) Number of Cells: 12 Function: Battery Balancer Interface: UART |
Produkt ist nicht verfügbar |
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IR3742MTRPBF | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 20A 17QFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Package / Case: 17-PowerVQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 7.5V Rds On (Typ): 4mOhm LS, 8mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 20A Technology: Power MOSFET Voltage - Load: 1V ~ 21V Supplier Device Package: 17-PQFN (5x6) Fault Protection: Current Limiting, Over Temperature, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
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IPD12CN10N | Infineon Technologies | Description: N-CHANNEL POWER MOSFET |
auf Bestellung 3175 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP12CN10LG | Infineon Technologies | Description: POWER FIELD-EFFECT TRANSISTOR, 6 |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9012AQUXUMA1 | Infineon Technologies |
Description: IC BATT BALANCER 12CELL Packaging: Tape & Reel (TR) Number of Cells: 12 Function: Battery Balancer Interface: UART |
Produkt ist nicht verfügbar |
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IPTC014N08NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 37A/330A HDSOP Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPTC014N08NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 37A/330A HDSOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
auf Bestellung 1521 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R299CPAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SKW04N120FKSA1 | Infineon Technologies | Description: IGBT |
Produkt ist nicht verfügbar |
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PBL38620/2SOA | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24 Packaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: PG-DSO-24-8 Number of Circuits: 1 Power (Watts): 290 mW |
auf Bestellung 1510 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6305WH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAR6702VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SC79-2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 250 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6305E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6704E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Current - Max: 200 mA Power Dissipation (Max): 250 mW |
auf Bestellung 443107 Stücke: Lieferzeit 10-14 Tag (e) |
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BGA9C1MN9E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6 Packaging: Tape & Reel (TR) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 4.4GHz ~ 5GHz RF Type: 5G Voltage - Supply: 1.1V ~ 2V Gain: 20.5dB Current - Supply: 5.6mA Noise Figure: 1dB P1dB: 8dBm Test Frequency: 4.9GHz Supplier Device Package: PG-TSNP-9-6 |
Produkt ist nicht verfügbar |
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BGA9C1MN9E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6 Packaging: Cut Tape (CT) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 4.4GHz ~ 5GHz RF Type: 5G Voltage - Supply: 1.1V ~ 2V Gain: 20.5dB Current - Supply: 5.6mA Noise Figure: 1dB P1dB: 8dBm Test Frequency: 4.9GHz Supplier Device Package: PG-TSNP-9-6 |
Produkt ist nicht verfügbar |
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BGA9V1MN9E6327XTSA1 | Infineon Technologies |
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6 Packaging: Tape & Reel (TR) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.2GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 2V Gain: 22.5dB Current - Supply: 5.8mA Noise Figure: 0.75dB P1dB: 7dbm Test Frequency: 3.8GHz Supplier Device Package: PG-TSNP-9-6 |
Produkt ist nicht verfügbar |
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BGA9V1MN9E6327XTSA1 | Infineon Technologies |
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6 Packaging: Cut Tape (CT) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.2GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 2V Gain: 22.5dB Current - Supply: 5.8mA Noise Figure: 0.75dB P1dB: 7dbm Test Frequency: 3.8GHz Supplier Device Package: PG-TSNP-9-6 |
Produkt ist nicht verfügbar |
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BGA 915N7 E6327 | Infineon Technologies |
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1575.42MHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 15.5dB Current - Supply: 4.4mA Noise Figure: 0.7dB P1dB: -5dBm Test Frequency: 1575.42MHz Supplier Device Package: PG-TSNP-7-6 |
Produkt ist nicht verfügbar |
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F475R07W2H3B51BOMA1 | Infineon Technologies | Description: IGBT, 75A, 650V, N-CHANNEL |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT1707E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT143-4 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7469GV52 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE7469
Description: IC REG LINEAR VOLT TLE7469
Produkt ist nicht verfügbar
TLE71851EXUMA1 |
Hersteller: Infineon Technologies
Description: TLE7185 - GATE DRIVER
Description: TLE7185 - GATE DRIVER
Produkt ist nicht verfügbar
TLE7189F |
Hersteller: Infineon Technologies
Description: TLE7189 - GATE DRIVER
Description: TLE7189 - GATE DRIVER
Produkt ist nicht verfügbar
TLE72722EXUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 300MA SSOP-14-EP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 2.04 EUR |
TLE72722EXUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 300MA SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.38 EUR |
10+ | 3.93 EUR |
25+ | 3.71 EUR |
100+ | 3.22 EUR |
250+ | 3.05 EUR |
500+ | 2.74 EUR |
1000+ | 2.31 EUR |
TLE82422LXUMA2 |
Hersteller: Infineon Technologies
Description: IC CURRENT SOURCE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Description: IC CURRENT SOURCE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Produkt ist nicht verfügbar
PEB4265TV1.1GD |
auf Bestellung 18400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 7.63 EUR |
BAT5402LRHE6327XTSA1 |
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
MB4213PF-G-BND-JN-ERE1 |
Hersteller: Infineon Technologies
Description: IC SUPERVISOR REG DC/DC 14SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC SUPERVISOR REG DC/DC 14SOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
IPB200N15N3 |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
IPB200N15N3G |
Hersteller: Infineon Technologies
Description: IPB200N15 - 12V-300V N-CHANNEL P
Description: IPB200N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
IPI200N15N3 G |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Description: MOSFET N-CH 150V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Produkt ist nicht verfügbar
BTS5016-1EKB |
Hersteller: Infineon Technologies
Description: BTS5016 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
Description: BTS5016 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
BTS50161EKBXUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
auf Bestellung 91616 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
260+ | 1.87 EUR |
TLE9872QXA40XUMA1 |
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.64 EUR |
10+ | 7.8 EUR |
25+ | 7.44 EUR |
100+ | 6.46 EUR |
250+ | 6.39 EUR |
BSM50GX120DN2BOSA1 |
Produkt ist nicht verfügbar
BTS781GP |
Hersteller: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Description: BRUSH DC MOTOR CONTROLLER
Produkt ist nicht verfügbar
IPW65R660CFDFKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
auf Bestellung 14517 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
302+ | 1.58 EUR |
IM818MCCXKMA1 |
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 16A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 16 A
Voltage: 1.2 kV
Description: IGBT MODULE 1200V 16A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 16 A
Voltage: 1.2 kV
auf Bestellung 639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 59.24 EUR |
14+ | 52.65 EUR |
112+ | 46.05 EUR |
TDA21470AUMA1 |
Hersteller: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TDA21470AUMA1 |
Hersteller: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
EVALPFC5KIKWWR5SYSTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IKW40N65WR5, IDW60C65D1, 1ED44175
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264VAC Input
Embedded: No
Part Status: Active
Description: EVAL BOARD
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IKW40N65WR5, IDW60C65D1, 1ED44175
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264VAC Input
Embedded: No
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 445.28 EUR |
IPA80R460CEXKSA2 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 10.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET N-CH 800V 10.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.44 EUR |
50+ | 2.41 EUR |
100+ | 2.21 EUR |
500+ | 1.83 EUR |
BAS7004E6433HTMA1 |
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
IPD60R600PFD7SAUMA1 |
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R600PFD7SAUMA1 |
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 4709 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
22+ | 0.84 EUR |
100+ | 0.65 EUR |
500+ | 0.55 EUR |
BAS16SH6727XTSA1 |
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)PX3746DDQSM1383XUMA1 |
Hersteller: Infineon Technologies
Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
S25FL064P0XBHV020 |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT 104MHZ 24BGA
Description: IC FLASH 64MBIT 104MHZ 24BGA
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.36 EUR |
IAUT165N08S5N029ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Produkt ist nicht verfügbar
SAF-XC164LM-16F20F BA |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAF-XC164LM-16F40F BA |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Produkt ist nicht verfügbar
BTS5020-1EKA |
Hersteller: Infineon Technologies
Description: BTS5020 - PROFET - SMART HIGH SI
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Description: BTS5020 - PROFET - SMART HIGH SI
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
IRF8714TRPBF-1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
DD261N20KHPSA1 |
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2000V 260A
Description: DIODE MODULE GP 2000V 260A
Produkt ist nicht verfügbar
ND261N20KHPSA1 |
Hersteller: Infineon Technologies
Description: DIODE GP 2KV 260A BG-PB50ND-1
Description: DIODE GP 2KV 260A BG-PB50ND-1
Produkt ist nicht verfügbar
ITS42K5DLDFXUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
auf Bestellung 124184 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.82 EUR |
10+ | 1.98 EUR |
25+ | 1.78 EUR |
100+ | 1.55 EUR |
250+ | 1.45 EUR |
500+ | 1.38 EUR |
1000+ | 1.33 EUR |
2500+ | 1.27 EUR |
TLE9877QTW40XUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 6.3 EUR |
TLE9012AQUXUMA1 |
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
IR3742MTRPBF |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
IPD12CN10N |
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
279+ | 1.81 EUR |
IPP12CN10LG |
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Description: POWER FIELD-EFFECT TRANSISTOR, 6
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
512+ | 0.95 EUR |
TLE9012AQUXUMA1 |
Hersteller: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Produkt ist nicht verfügbar
IPTC014N08NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Produkt ist nicht verfügbar
IPTC014N08NM5ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.12 EUR |
10+ | 7.84 EUR |
100+ | 6.46 EUR |
500+ | 5.62 EUR |
IPB60R299CPAATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.7 EUR |
2000+ | 2.55 EUR |
PBL38620/2SOA |
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 1510 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 6.66 EUR |
BAR6305WH6327XTSA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
BAR6702VH6327XTSA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
BAR6305E6327HTSA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
BAR6704E6327HTSA1 |
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
auf Bestellung 443107 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3328+ | 0.14 EUR |
BGA9C1MN9E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
BGA9C1MN9E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
BGA9V1MN9E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
BGA9V1MN9E6327XTSA1 |
Hersteller: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Produkt ist nicht verfügbar
BGA 915N7 E6327 |
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
F475R07W2H3B51BOMA1 |
Hersteller: Infineon Technologies
Description: IGBT, 75A, 650V, N-CHANNEL
Description: IGBT, 75A, 650V, N-CHANNEL
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)BAT1707E6327HTSA1 |
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |