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IPD14N06S280ATMA2

IPD14N06S280ATMA2 Infineon Technologies

Infineon_IPD14N06S2_80_DS_v01_00_en-1731712.pdf Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 3019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.06 EUR
100+ 0.76 EUR
500+ 0.62 EUR
1000+ 0.59 EUR
2500+ 0.55 EUR
5000+ 0.48 EUR
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Technische Details IPD14N06S280ATMA2 Infineon Technologies

Description: MOSFET N-CH 55V 17A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 4V @ 14µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V.

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IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
14+ 1.29 EUR
100+ 0.85 EUR
500+ 0.66 EUR
Mindestbestellmenge: 9
IPD14N06S280ATMA2
Produktcode: 154372 		INFNS09524-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies ipd14n06s2-80_green.pdf Trans MOSFET N-CH 55V 17A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Hersteller : Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar