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BAL99E6327HTSA1

BAL99E6327HTSA1 Infineon Technologies


bal99series.pdf Hersteller: Infineon Technologies
Diode Switching Si 85V 0.25A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 36000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6850+0.022 EUR
Mindestbestellmenge: 6850
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Technische Details BAL99E6327HTSA1 Infineon Technologies

Description: DIODE GEN PURP 80V 250MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: PG-SOT23, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 70 V.

Weitere Produktangebote BAL99E6327HTSA1 nach Preis ab 0.021 EUR bis 0.065 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies bal99series.pdf Diode Switching Si 85V 0.25A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3323+0.046 EUR
6850+ 0.021 EUR
Mindestbestellmenge: 3323
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
auf Bestellung 220400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8266+0.065 EUR
Mindestbestellmenge: 8266
BAL99E6327HTSA1 Hersteller : ROCHESTER ELECTRONICS INFNS10749-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - BAL99E6327HTSA1 - BAL99 GENERAL PURPOSE HIGH SPEED SWITCH
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 238400 Stücke:
Lieferzeit 14-21 Tag (e)
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies bal99series.pdf Diode Switching Si 85V 0.25A Automotive 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Produkt ist nicht verfügbar
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies bal99series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b842ae203f6 Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Produkt ist nicht verfügbar
BAL99E6327HTSA1 BAL99E6327HTSA1 Hersteller : Infineon Technologies Infineon-BAL99SERIES-DS-v01_01-en-1730986.pdf Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Produkt ist nicht verfügbar