BAL99E6327HTSA1 Infineon Technologies
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6850+ | 0.022 EUR |
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Technische Details BAL99E6327HTSA1 Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: PG-SOT23, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 70 V.
Weitere Produktangebote BAL99E6327HTSA1 nach Preis ab 0.021 EUR bis 0.065 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies | Diode Switching Si 85V 0.25A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 80V 250MA SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
auf Bestellung 220400 Stücke: Lieferzeit 10-14 Tag (e) |
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BAL99E6327HTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BAL99E6327HTSA1 - BAL99 GENERAL PURPOSE HIGH SPEED SWITCH tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 238400 Stücke: Lieferzeit 14-21 Tag (e) |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies | Diode Switching Si 85V 0.25A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 80V 250MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
Produkt ist nicht verfügbar |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies |
Description: DIODE GEN PURP 80V 250MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
Produkt ist nicht verfügbar |
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BAL99E6327HTSA1 | Hersteller : Infineon Technologies | Diodes - General Purpose, Power, Switching Silicon Tuning Diode |
Produkt ist nicht verfügbar |