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BAT64W-7-F BAT64W-7-F Diodes Incorporated BAT64W-AW-CW-SW.pdf Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 146700 Stücke:
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53+0.33 EUR
76+ 0.23 EUR
140+ 0.13 EUR
500+ 0.099 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 53
BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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3000+0.08 EUR
6000+ 0.075 EUR
9000+ 0.062 EUR
Mindestbestellmenge: 3000
BAT64-7-F BAT64-7-F Diodes Incorporated BAT64-A-C-S.pdf Description: DIODE SCHOTTKY 40V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 38
BAT64Q-13-F BAT64Q-13-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 580000 Stücke:
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10000+0.11 EUR
30000+ 0.1 EUR
50000+ 0.088 EUR
100000+ 0.086 EUR
Mindestbestellmenge: 10000
BAT64SQ-13-F BAT64SQ-13-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64AQ-13-F BAT64AQ-13-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
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BAT64Q-7-F BAT64Q-7-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAT64SQ-7-F BAT64SQ-7-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAT64AQ-7-F BAT64AQ-7-F Diodes Incorporated DS45354.pdf Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6065SPDWQ-13 Diodes Incorporated DMNH6065SPDWQ.pdf Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6065SPDW-13 Diodes Incorporated DMNH6065SPDW.pdf Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Produkt ist nicht verfügbar
DMNH6065SSD-13 DMNH6065SSD-13 Diodes Incorporated DMNH6065SSD.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
DMNH6065SSDQ-13 DMNH6065SSDQ-13 Diodes Incorporated DMNH6065SSDQ.pdf Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH6016LPD-13 DMTH6016LPD-13 Diodes Incorporated DMTH6016LPD.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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2500+0.67 EUR
5000+ 0.64 EUR
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DMTH6016LPDQ-13 DMTH6016LPDQ-13 Diodes Incorporated DMTH6016LPDQ.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
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2500+0.85 EUR
5000+ 0.81 EUR
12500+ 0.77 EUR
Mindestbestellmenge: 2500
DMTH6016LPDQ-13 DMTH6016LPDQ-13 Diodes Incorporated DMTH6016LPDQ.pdf Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 977297 Stücke:
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9+2.04 EUR
11+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
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DMTH6016LPDWQ-13 Diodes Incorporated DMTH6016LPDWQ.pdf Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6035SPDW-13 Diodes Incorporated DMNH6035SPDW.pdf Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 15000 Stücke:
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2500+0.86 EUR
5000+ 0.82 EUR
12500+ 0.78 EUR
Mindestbestellmenge: 2500
DMNH6035SPDW-13 Diodes Incorporated DMNH6035SPDW.pdf Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 15000 Stücke:
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9+2.08 EUR
11+ 1.7 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 9
DMNH6035SPDWQ-13 Diodes Incorporated DMNH6035SPDWQ.pdf Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84C3V0TA BZX84C3V0TA Diodes Incorporated ds18001.pdf Description: ZENER SOT23 3V 0.3W 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
DMN2004VK-7B DMN2004VK-7B Diodes Incorporated ds30865.pdf Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 150950 Stücke:
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27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 27
DMT35M4LFDF-7 DMT35M4LFDF-7 Diodes Incorporated DMT35M4LFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
DMT35M4LFDF-7 DMT35M4LFDF-7 Diodes Incorporated DMT35M4LFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 67024 Stücke:
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DMT12H065LFDF-7 DMT12H065LFDF-7 Diodes Incorporated DMT12H065LFDF.pdf Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39259 Stücke:
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12+1.53 EUR
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DMN10H220LFDF-7 DMN10H220LFDF-7 Diodes Incorporated DMN10H220LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN10H220LFDF-7 DMN10H220LFDF-7 Diodes Incorporated DMN10H220LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN3025LFDF-7 DMN3025LFDF-7 Diodes Incorporated DMN3025LFDF.pdf Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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DMN3025LFDF-7 DMN3025LFDF-7 Diodes Incorporated DMN3025LFDF.pdf Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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DMT12H060LFDF-7 DMT12H060LFDF-7 Diodes Incorporated DMT12H060LFDF.pdf Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
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DMT12H060LFDF-7 DMT12H060LFDF-7 Diodes Incorporated DMT12H060LFDF.pdf Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
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MMBTA56Q-13-F MMBTA56Q-13-F Diodes Incorporated MMBTA55_MMBTA56.pdf Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
Qualification: AEC-Q101
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MMBTA56Q-13-F MMBTA56Q-13-F Diodes Incorporated MMBTA55_MMBTA56.pdf Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
Qualification: AEC-Q101
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ZTX757STZ ZTX757STZ Diodes Incorporated ZTX756.pdf Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
ZTX757STZ ZTX757STZ Diodes Incorporated ZTX756.pdf Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
AP7583Q-50MP-13 Diodes Incorporated AP7583Q_AQ.pdf Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
AP7583Q-33MP-13 Diodes Incorporated AP7583Q_AQ.pdf Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
AP7583Q-MP-13 Diodes Incorporated Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
D8V0X1B2LPQ-7B D8V0X1B2LPQ-7B Diodes Incorporated D8V0X1B2LPQ.pdf Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDVI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D8V0X1B2LPQ-7B D8V0X1B2LPQ-7B Diodes Incorporated D8V0X1B2LPQ.pdf Description: Dataline Protection PP X1-DFN100
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDVI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DML22990LWG-7 DML22990LWG-7 Diodes Incorporated DML22990LWG.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3020-1
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 10-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 0.6V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3020-10 (Type C)
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FW3200010 FW3200010 Diodes Incorporated FW.pdf Description: CRYSTAL 32.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 32 MHz
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DSC06A065FP DSC06A065FP Diodes Incorporated Description: SILICON CARBIDE RECTIFIER ITO-22
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 273pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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DSC06A065 DSC06A065 Diodes Incorporated Description: SILICON CARBIDE RECTIFIER TO220A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 272pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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ZXTD717MCTA ZXTD717MCTA Diodes Incorporated ZXTD717MC.pdf Description: TRANS 2PNP 12V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 150mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: DFN3020B-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZXTPS720MCTA ZXTPS720MCTA Diodes Incorporated Description: TRANS PNP 40V 3A DFN3020B-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP + Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN3020B-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Produkt ist nicht verfügbar
DDZ8V2B-7 DDZ8V2B-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
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DDZ8V2B-7 DDZ8V2B-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
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UDZ8V2B-7 UDZ8V2B-7 Diodes Incorporated ds30290.pdf Description: DIODE ZENER 8.2V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
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UDZ8V2B-7 UDZ8V2B-7 Diodes Incorporated ds30290.pdf Description: DIODE ZENER 8.2V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
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P6SMAJ18ADF-13 P6SMAJ18ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 18VWM 29.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMAJ18ADF-13 P6SMAJ18ADF-13 Diodes Incorporated P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Description: TVS DIODE 18VWM 29.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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21+0.84 EUR
28+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
2000+ 0.22 EUR
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PI6CDBL402BLIEX PI6CDBL402BLIEX Diodes Incorporated PI6CDBL402B.pdf Description: 3.3V 1:4 LOW POWER PCIE BUFFER
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.63V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes with Bypass
Number of Circuits: 1
DigiKey Programmable: Not Verified
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3000+1.6 EUR
6000+ 1.54 EUR
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PI6CDBL402BLIEX PI6CDBL402BLIEX Diodes Incorporated PI6CDBL402B.pdf Description: 3.3V 1:4 LOW POWER PCIE BUFFER
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.63V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes with Bypass
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
10+ 3.13 EUR
25+ 2.95 EUR
100+ 2.52 EUR
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500+ 2.07 EUR
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PI6ULS5V9306ZEEX PI6ULS5V9306ZEEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC TRANSLTR BIDIRECTIONAL 8TDFN
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TDFN (2x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
PI6ULS5V9306ZEEX PI6ULS5V9306ZEEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC TRANSLTR BIDIRECTIONAL 8TDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TDFN (2x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 2975 Stücke:
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PI6ULS5V9306WEX PI6ULS5V9306WEX Diodes Incorporated PI6ULS5V9306.pdf Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
AP2202K-3.0TRE1 AP2202K-3.0TRE1 Diodes Incorporated AP2202.pdf Description: IC REG LINEAR 3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
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3000+0.16 EUR
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AP2202K-3.0TRE1 AP2202K-3.0TRE1 Diodes Incorporated AP2202.pdf Description: IC REG LINEAR 3V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
auf Bestellung 14960 Stücke:
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25+0.7 EUR
33+ 0.54 EUR
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1000+ 0.18 EUR
Mindestbestellmenge: 25
AP2202K-3.3TRE1 AP2202K-3.3TRE1 Diodes Incorporated AP2202.pdf Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
Produkt ist nicht verfügbar
BAT64W-7-F BAT64W-AW-CW-SW.pdf
BAT64W-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 146700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
76+ 0.23 EUR
140+ 0.13 EUR
500+ 0.099 EUR
1000+ 0.069 EUR
Mindestbestellmenge: 53
BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.08 EUR
6000+ 0.075 EUR
9000+ 0.062 EUR
Mindestbestellmenge: 3000
BAT64-7-F BAT64-A-C-S.pdf
BAT64-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 38
BAT64Q-13-F DS45354.pdf
BAT64Q-13-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 580000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.11 EUR
30000+ 0.1 EUR
50000+ 0.088 EUR
100000+ 0.086 EUR
Mindestbestellmenge: 10000
BAT64SQ-13-F DS45354.pdf
BAT64SQ-13-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.11 EUR
Mindestbestellmenge: 10000
BAT64AQ-13-F DS45354.pdf
BAT64AQ-13-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 10000
BAT64Q-7-F DS45354.pdf
BAT64Q-7-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAT64SQ-7-F DS45354.pdf
BAT64SQ-7-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAT64AQ-7-F DS45354.pdf
BAT64AQ-7-F
Hersteller: Diodes Incorporated
Description: SCHOTTKY DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6065SPDWQ-13 DMNH6065SPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6065SPDW-13 DMNH6065SPDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 27A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Produkt ist nicht verfügbar
DMNH6065SSD-13 DMNH6065SSD.pdf
DMNH6065SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
DMNH6065SSDQ-13 DMNH6065SSDQ.pdf
DMNH6065SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH6016LPD-13 DMTH6016LPD.pdf
DMTH6016LPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.67 EUR
5000+ 0.64 EUR
Mindestbestellmenge: 2500
DMTH6016LPDQ-13 DMTH6016LPDQ.pdf
DMTH6016LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
5000+ 0.81 EUR
12500+ 0.77 EUR
Mindestbestellmenge: 2500
DMTH6016LPDQ-13 DMTH6016LPDQ.pdf
DMTH6016LPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 977297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
11+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
DMTH6016LPDWQ-13 DMTH6016LPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (SWP)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6035SPDW-13 DMNH6035SPDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.86 EUR
5000+ 0.82 EUR
12500+ 0.78 EUR
Mindestbestellmenge: 2500
DMNH6035SPDW-13 DMNH6035SPDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.08 EUR
11+ 1.7 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 9
DMNH6035SPDWQ-13 DMNH6035SPDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZX84C3V0TA ds18001.pdf
BZX84C3V0TA
Hersteller: Diodes Incorporated
Description: ZENER SOT23 3V 0.3W 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
DMN2004VK-7B ds30865.pdf
DMN2004VK-7B
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 150950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 27
DMT35M4LFDF-7 DMT35M4LFDF.pdf
DMT35M4LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
DMT35M4LFDF-7 DMT35M4LFDF.pdf
DMT35M4LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
auf Bestellung 67024 Stücke:
Lieferzeit 10-14 Tag (e)
DMT12H065LFDF-7 DMT12H065LFDF.pdf
DMT12H065LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 115V 4.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
auf Bestellung 39259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
14+ 1.33 EUR
100+ 0.92 EUR
500+ 0.77 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
DMN10H220LFDF-7 DMN10H220LFDF.pdf
DMN10H220LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN10H220LFDF-7 DMN10H220LFDF.pdf
DMN10H220LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
auf Bestellung 8570 Stücke:
Lieferzeit 10-14 Tag (e)
DMN3025LFDF-7 DMN3025LFDF.pdf
DMN3025LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
DMN3025LFDF-7 DMN3025LFDF.pdf
DMN3025LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 9.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 179882 Stücke:
Lieferzeit 10-14 Tag (e)
DMT12H060LFDF-7 DMT12H060LFDF.pdf
DMT12H060LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 3567000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.33 EUR
30000+ 0.32 EUR
Mindestbestellmenge: 3000
DMT12H060LFDF-7 DMT12H060LFDF.pdf
DMT12H060LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V U-DFN202
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 115 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
auf Bestellung 3568887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 18
MMBTA56Q-13-F MMBTA55_MMBTA56.pdf
MMBTA56Q-13-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.064 EUR
30000+ 0.063 EUR
Mindestbestellmenge: 10000
MMBTA56Q-13-F MMBTA55_MMBTA56.pdf
MMBTA56Q-13-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
52+ 0.34 EUR
106+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.096 EUR
2000+ 0.083 EUR
5000+ 0.077 EUR
Mindestbestellmenge: 35
ZTX757STZ ZTX756.pdf
ZTX757STZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
ZTX757STZ ZTX756.pdf
ZTX757STZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
AP7583Q-50MP-13 AP7583Q_AQ.pdf
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
AP7583Q-33MP-13 AP7583Q_AQ.pdf
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
AP7583Q-MP-13
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR MSOP-8EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: 8-MSOP-EP
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
D8V0X1B2LPQ-7B D8V0X1B2LPQ.pdf
D8V0X1B2LPQ-7B
Hersteller: Diodes Incorporated
Description: Dataline Protection PP X1-DFN100
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDVI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 509570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
36+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
D8V0X1B2LPQ-7B D8V0X1B2LPQ.pdf
D8V0X1B2LPQ-7B
Hersteller: Diodes Incorporated
Description: Dataline Protection PP X1-DFN100
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDVI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.13 EUR
50000+ 0.11 EUR
Mindestbestellmenge: 10000
DML22990LWG-7 DML22990LWG.pdf
DML22990LWG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3020-1
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 10-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 0.6V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3020-10 (Type C)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.4 EUR
Mindestbestellmenge: 3000
FW3200010 FW.pdf
FW3200010
Hersteller: Diodes Incorporated
Description: CRYSTAL 32.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.079" L x 0.063" W (2.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.022" (0.55mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 32 MHz
auf Bestellung 21000 Stücke:
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3000+0.59 EUR
Mindestbestellmenge: 3000
DSC06A065FP
DSC06A065FP
Hersteller: Diodes Incorporated
Description: SILICON CARBIDE RECTIFIER ITO-22
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 273pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 150 Stücke:
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DSC06A065
DSC06A065
Hersteller: Diodes Incorporated
Description: SILICON CARBIDE RECTIFIER TO220A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 272pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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4+5.53 EUR
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ZXTD717MCTA ZXTD717MC.pdf
ZXTD717MCTA
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 12V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 150mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: DFN3020B-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZXTPS720MCTA
ZXTPS720MCTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN3020B-8
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP + Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN3020B-8
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Produkt ist nicht verfügbar
DDZ8V2B-7 DDZ5V1B-DDZ43.pdf
DDZ8V2B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
auf Bestellung 117000 Stücke:
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Anzahl Preis ohne MwSt
3000+0.068 EUR
6000+ 0.063 EUR
9000+ 0.052 EUR
30000+ 0.051 EUR
75000+ 0.046 EUR
Mindestbestellmenge: 3000
DDZ8V2B-7 DDZ5V1B-DDZ43.pdf
DDZ8V2B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
auf Bestellung 117000 Stücke:
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44+0.4 EUR
64+ 0.28 EUR
131+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.078 EUR
Mindestbestellmenge: 44
UDZ8V2B-7 ds30290.pdf
UDZ8V2B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
auf Bestellung 3000 Stücke:
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3000+0.095 EUR
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UDZ8V2B-7 ds30290.pdf
UDZ8V2B-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
auf Bestellung 4510 Stücke:
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32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
P6SMAJ18ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ18ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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10000+0.19 EUR
Mindestbestellmenge: 10000
P6SMAJ18ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
P6SMAJ18ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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21+0.84 EUR
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PI6CDBL402BLIEX PI6CDBL402B.pdf
PI6CDBL402BLIEX
Hersteller: Diodes Incorporated
Description: 3.3V 1:4 LOW POWER PCIE BUFFER
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.63V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes with Bypass
Number of Circuits: 1
DigiKey Programmable: Not Verified
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3000+1.6 EUR
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PI6CDBL402BLIEX PI6CDBL402B.pdf
PI6CDBL402BLIEX
Hersteller: Diodes Incorporated
Description: 3.3V 1:4 LOW POWER PCIE BUFFER
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 3.63V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes with Bypass
Number of Circuits: 1
DigiKey Programmable: Not Verified
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6+3.5 EUR
10+ 3.13 EUR
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Mindestbestellmenge: 6
PI6ULS5V9306ZEEX PI6ULS5V9306.pdf
PI6ULS5V9306ZEEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 8TDFN
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TDFN (2x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
PI6ULS5V9306ZEEX PI6ULS5V9306.pdf
PI6ULS5V9306ZEEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 8TDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TDFN (2x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 2975 Stücke:
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10+1.9 EUR
11+ 1.69 EUR
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500+ 1.09 EUR
1000+ 0.86 EUR
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PI6ULS5V9306WEX PI6ULS5V9306.pdf
PI6ULS5V9306WEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
AP2202K-3.0TRE1 AP2202.pdf
AP2202K-3.0TRE1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
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3000+0.16 EUR
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Mindestbestellmenge: 3000
AP2202K-3.0TRE1 AP2202.pdf
AP2202K-3.0TRE1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
auf Bestellung 14960 Stücke:
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25+0.7 EUR
33+ 0.54 EUR
37+ 0.48 EUR
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500+ 0.23 EUR
1000+ 0.18 EUR
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AP2202K-3.3TRE1 AP2202.pdf
AP2202K-3.3TRE1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 150MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
Produkt ist nicht verfügbar
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