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DMNH6035SPDWQ-13

DMNH6035SPDWQ-13 Diodes Zetex


dmnh6035spdwq.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 33A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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Technische Details DMNH6035SPDWQ-13 Diodes Zetex

Description: MOSFET 2N-CH 60V 33A POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 68W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R), Grade: Automotive, Qualification: AEC-Q101.

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DMNH6035SPDWQ-13 Hersteller : Diodes Inc dmnh6035spdwq.pdf Trans MOSFET N-CH 60V 33A Automotive AEC-Q101 8-Pin PowerDI EP T/R
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DMNH6035SPDWQ-13 Hersteller : Diodes Incorporated DMNH6035SPDWQ.pdf Description: MOSFET 2N-CH 60V 33A POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 68W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMNH6035SPDWQ-13 DMNH6035SPDWQ-13 Hersteller : Diodes Incorporated DIOD_S_A0008533910_1-2543171.pdf MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K
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