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DMNH6065SSDQ-13

DMNH6065SSDQ-13 Diodes Incorporated


DMNH6065SSDQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMNH6065SSDQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 3.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

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DMNH6065SSDQ-13 Hersteller : Diodes Incorporated DIOD_S_A0012955991_1-2513175.pdf MOSFET MOSFET BVDSS: 41V-60V SO-8 T&R 2.5K
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