DMNH6035SPDW-13 Diodes Zetex
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.75 EUR |
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Produktbewertung abgeben
Technische Details DMNH6035SPDW-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 33A POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 68W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R).
Weitere Produktangebote DMNH6035SPDW-13 nach Preis ab 0.78 EUR bis 2.16 EUR
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DMNH6035SPDW-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2274 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH6035SPDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 33A POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 68W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH6035SPDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 33A POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 68W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6035SPDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 33A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMNH6035SPDW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 33A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |