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SBR10U45D1-13 SBR10U45D1-13 Diodes Incorporated SBR10U45D1.pdf Description: DIODE SBR 45V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.62 EUR
Mindestbestellmenge: 2500
SBR12M120P5-13 SBR12M120P5-13 Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Produkt ist nicht verfügbar
2N7002H-7 2N7002H-7 Diodes Incorporated 2N7002H.pdf Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 1102695 Stücke:
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42+0.42 EUR
61+ 0.29 EUR
125+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
AH1815-Z-7 AH1815-Z-7 Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Features: Sleep Mode
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 12000 Stücke:
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16+1.16 EUR
20+ 0.89 EUR
25+ 0.76 EUR
50+ 0.73 EUR
100+ 0.63 EUR
500+ 0.54 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
AH9486-WUF-7 AH9486-WUF-7 Diodes Incorporated AH9485_86.pdf Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
AP1694AS-13 AP1694AS-13 Diodes Incorporated Description: IC LED DRIVER OFFL TRIAC 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Produkt ist nicht verfügbar
AP2138N-3.6TRG1 AP2138N-3.6TRG1 Diodes Incorporated AP2138-9.pdf Description: IC REG LINEAR 3.6V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.6V
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current
auf Bestellung 4920 Stücke:
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22+0.81 EUR
27+ 0.66 EUR
30+ 0.6 EUR
100+ 0.45 EUR
250+ 0.41 EUR
500+ 0.34 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 22
APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
Lieferzeit 10-14 Tag (e)
APD340VRTR-G1 APD340VRTR-G1 Diodes Incorporated APD340.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Produkt ist nicht verfügbar
DMN1016UCB6-7 DMN1016UCB6-7 Diodes Incorporated Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
auf Bestellung 3493 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
DMN1054UCB4-7 DMN1054UCB4-7 Diodes Incorporated DMN1054UCB4.pdf Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
auf Bestellung 455237 Stücke:
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17+1.04 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 17
DMN2005UPS-13 DMN2005UPS-13 Diodes Incorporated DMN2005UPS.pdf Description: MOSFET N-CH 20V 20A POWERDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
auf Bestellung 7375 Stücke:
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13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
DMN3023L-7 DMN3023L-7 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 6059456 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
38+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 30
DMN61D9U-7 DMN61D9U-7 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
DMN61D9UDW-7 DMN61D9UDW-7 Diodes Incorporated DMN61D9UDW.pdf Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
DMN62D0U-13 DMN62D0U-13 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 96419 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
101+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.088 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 34
DMN62D0U-7 DMN62D0U-7 Diodes Incorporated DMN62D0U.pdf Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 967117 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
50+ 0.35 EUR
103+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
DMN62D0UDW-7 DMN62D0UDW-7 Diodes Incorporated DMN62D0UDW.pdf Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 201297 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
DMN62D0UW-7 DMN62D0UW-7 Diodes Incorporated DMN62D0UW.pdf Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 437412 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
Mindestbestellmenge: 38
DMP2100UFU-7 DMP2100UFU-7 Diodes Incorporated DMP2100UFU.pdf Description: MOSFET 2P-CH 20V U-DFN2030-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
DMP32D5SFB-7B DMP32D5SFB-7B Diodes Incorporated DMP32D5SFB.pdf Description: MOSFET P-CH 30V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
auf Bestellung 218138 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
DMP6050SFG-7 DMP6050SFG-7 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
DMT10H010LPS-13 DMT10H010LPS-13 Diodes Incorporated DMT10H010LPS.pdf Description: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 10763 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
10+ 2.05 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 8
DMT6009LFG-7 DMT6009LFG-7 Diodes Incorporated DMT6009LFG.pdf Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 4168 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
DMT6010LPS-13 DMT6010LPS-13 Diodes Incorporated DMT6010LPS.pdf Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12145 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
14+ 1.3 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 12
DMTH6009LK3-13 DMTH6009LK3-13 Diodes Incorporated DMTH6009LK3.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 7100 Stücke:
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10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
DMTH6010SK3-13 DMTH6010SK3-13 Diodes Incorporated DMTH6010SK3.pdf Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 10000 Stücke:
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500+ 1.13 EUR
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DT1240V3-04LP-7 DT1240V3-04LP-7 Diodes Incorporated DT1240V3-04LP.pdf Description: TVS DIODE 3.3VWM 8.8VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 68196 Stücke:
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DT1240V3-04SO-7 DT1240V3-04SO-7 Diodes Incorporated DT1240V3-04SO.pdf Description: TVS DIODE 3.3VWM 8.8VC SOT26
auf Bestellung 2646000 Stücke:
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SBR10U45D1-13 SBR10U45D1-13 Diodes Incorporated SBR10U45D1.pdf Description: DIODE SBR 45V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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SBR12M120P5-13 SBR12M120P5-13 Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
auf Bestellung 223 Stücke:
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APD240VRTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
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DT1240V3-04SO-7 DT1240V3-04SO-7 Diodes Incorporated DT1240V3-04SO.pdf Description: TVS DIODE 3.3VWM 8.8VC SOT26
auf Bestellung 2646000 Stücke:
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AH1815-P-A AH1815-P-A Diodes Incorporated AH1815.pdf Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Features: Sleep Mode
Packaging: Tape & Box (TB)
Package / Case: 3-SIP, Formed Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.45 EUR
Mindestbestellmenge: 4000
DMG7401SFGQ-13 DMG7401SFGQ-13 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A POWERDI3333
Produkt ist nicht verfügbar
DMP4025SFGQ-13 DMP4025SFGQ-13 Diodes Incorporated DMP4025SFGQ.pdf Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 300000 Stücke:
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Mindestbestellmenge: 3000
APR34150MTR-G1 APR34150MTR-G1 Diodes Incorporated APR34150.pdf Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Produkt ist nicht verfügbar
APR34150MTR-G1 APR34150MTR-G1 Diodes Incorporated APR34150.pdf Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Produkt ist nicht verfügbar
DMN61D8LQ-13 DMN61D8LQ-13 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 180000 Stücke:
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Mindestbestellmenge: 10000
AP91352MN1-DT8-7 AP91352MN1-DT8-7 Diodes Incorporated AP91352.pdf Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
DMN61D8LQ-7 DMN61D8LQ-7 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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3000+0.25 EUR
6000+ 0.24 EUR
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Mindestbestellmenge: 3000
AP91352MN1-DT8-7 AP91352MN1-DT8-7 Diodes Incorporated AP91352.pdf Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
DMN61D8LQ-7 DMN61D8LQ-7 Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 133565 Stücke:
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24+0.74 EUR
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500+ 0.34 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
DMTH6004SCTB-13 DMTH6004SCTB-13 Diodes Incorporated DMTH6004SCTB.pdf Description: MOSFET N-CH 60V 100A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 23190 Stücke:
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5+3.8 EUR
10+ 3.16 EUR
100+ 2.51 EUR
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NX7011D0074.250000 NX7011D0074.250000 Diodes Incorporated NX701.pdf Description: XTAL OSC XO 74.2500MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 74.25 MHz
Base Resonator: Crystal
auf Bestellung 122 Stücke:
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7+2.85 EUR
10+ 2.72 EUR
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WF9021B0622.080000 WF9021B0622.080000 Diodes Incorporated WF902_RevA.pdf Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.551" L x 0.354" W (14.00mm x 9.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Height - Seated (Max): 0.205" (5.20mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
auf Bestellung 19 Stücke:
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1+55.7 EUR
10+ 51.98 EUR
WF7021B0622.080000 WF7021B0622.080000 Diodes Incorporated WF702_RevA.pdf Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.295" L x 0.197" W (7.50mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Height - Seated (Max): 0.098" (2.50mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
auf Bestellung 20 Stücke:
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1+45.41 EUR
10+ 42.39 EUR
HX2127001Q HX2127001Q Diodes Incorporated HX2127001Q_Ver.A.pdf Description: XTAL OSC XO 27.0000MHZ LVCMOS
Produkt ist nicht verfügbar
HX3124501Q HX3124501Q Diodes Incorporated HX3124501Q_Ver.A.pdf Description: XTAL OSC XO 24.545452MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.8V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 24.545452 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
HX3125006Q HX3125006Q Diodes Incorporated HX3125006Q_Ver.A.pdf Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±30ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 3000 Stücke:
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HX3127001Q HX3127001Q Diodes Incorporated HX3127001Q_Ver.01.pdf Description: XTAL OSC XO 27.0000MHZ LVCMOS
auf Bestellung 184 Stücke:
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7+2.82 EUR
10+ 2.69 EUR
50+ 2.63 EUR
100+ 2.25 EUR
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HX31330001 HX31330001 Diodes Incorporated HX31330001_Ver.A.pdf Description: XTAL OSC XO 33.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 90°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 33 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
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50+ 2.3 EUR
100+ 1.97 EUR
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HX3212F0040.000000 HX3212F0040.000000 Diodes Incorporated HX3212F0040.000000_Ver%20A.pdf Description: XTAL OSC XO 40.0000MHZ LVCMOS
auf Bestellung 124 Stücke:
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HX51706001 HX51706001 Diodes Incorporated HX51706001_Ver.A.pdf Description: XTAL OSC XO 70.6560MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 70.656 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
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10+ 3.49 EUR
50+ 3.41 EUR
100+ 2.92 EUR
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AH3772-P-B AH3772-P-B Diodes Incorporated Description: MAGNETIC SWITCH LATCH 3SIP
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 28V
Technology: Hall Effect
Sensing Range: 4mT Trip, -4mT Release
Current - Output (Max): 60mA
Current - Supply (Max): 4mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 1016 Stücke:
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15+1.25 EUR
19+ 0.95 EUR
25+ 0.82 EUR
50+ 0.79 EUR
100+ 0.67 EUR
500+ 0.59 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
AH3774-P-B AH3774-P-B Diodes Incorporated AH3774.pdf Description: MAGNETIC SWITCH LATCH 3SIP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.19 EUR
25+ 1.05 EUR
50+ 0.87 EUR
100+ 0.74 EUR
500+ 0.64 EUR
1000+ 0.56 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 13
AH3775-P-B AH3775-P-B Diodes Incorporated AH3775.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 93010000 Stücke:
Lieferzeit 10-14 Tag (e)
AH3776-P-B AH3776-P-B Diodes Incorporated AH3776.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
AH3777-P-B AH3777-P-B Diodes Incorporated AH3777.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
AH3781-P-B AH3781-P-B Diodes Incorporated Description: MAGNETIC SWITCH LATCH 3SIP
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 28V
Technology: Hall Effect
Sensing Range: 4mT Trip, -4mT Release
Current - Output (Max): 60mA
Current - Supply (Max): 5.8mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
auf Bestellung 2800 Stücke:
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14+1.28 EUR
18+ 0.98 EUR
100+ 0.69 EUR
1000+ 0.53 EUR
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SBR10U45D1-13 SBR10U45D1.pdf
SBR10U45D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.62 EUR
Mindestbestellmenge: 2500
SBR12M120P5-13 SBR12M120P5.pdf
SBR12M120P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Produkt ist nicht verfügbar
2N7002H-7 2N7002H.pdf
2N7002H-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 1102695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
61+ 0.29 EUR
125+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
AH1815-Z-7 AH1815.pdf
AH1815-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Features: Sleep Mode
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: SOT-553
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
20+ 0.89 EUR
25+ 0.76 EUR
50+ 0.73 EUR
100+ 0.63 EUR
500+ 0.54 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
AH9486-WUF-7 AH9485_86.pdf
AH9486-WUF-7
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2V-6V 6TSOT26F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2V ~ 6V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2V ~ 6V
Supplier Device Package: TSOT-26F
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
AP1694AS-13
AP1694AS-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Produkt ist nicht verfügbar
AP2138N-3.6TRG1 AP2138-9.pdf
AP2138N-3.6TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.6V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.6V
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current
auf Bestellung 4920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
27+ 0.66 EUR
30+ 0.6 EUR
100+ 0.45 EUR
250+ 0.41 EUR
500+ 0.34 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 22
APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
Lieferzeit 10-14 Tag (e)
APD340VRTR-G1 APD340.pdf
APD340VRTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A DO214AC
Produkt ist nicht verfügbar
DMN1016UCB6-7
DMN1016UCB6-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 5.5A U-WLB1510-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 920mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1510-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V
auf Bestellung 3493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
DMN1054UCB4-7 DMN1054UCB4.pdf
DMN1054UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: X1-WLB0808-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
auf Bestellung 455237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.9 EUR
100+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 17
DMN2005UPS-13 DMN2005UPS.pdf
DMN2005UPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 20A POWERDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V
auf Bestellung 7375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 6059456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
38+ 0.46 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 30
DMN61D9U-7 DMN61D9U.pdf
DMN61D9U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
DMN61D9UDW-7 DMN61D9UDW.pdf
DMN61D9UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A
Produkt ist nicht verfügbar
DMN62D0U-13 DMN62D0U.pdf
DMN62D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 96419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
101+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.088 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 34
DMN62D0U-7 DMN62D0U.pdf
DMN62D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 967117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
50+ 0.35 EUR
103+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
DMN62D0UDW-7 DMN62D0UDW.pdf
DMN62D0UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 201297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.52 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
DMN62D0UW-7 DMN62D0UW.pdf
DMN62D0UW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
auf Bestellung 437412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
54+ 0.33 EUR
111+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.092 EUR
Mindestbestellmenge: 38
DMP2100UFU-7 DMP2100UFU.pdf
DMP2100UFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V U-DFN2030-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
DMP32D5SFB-7B DMP32D5SFB.pdf
DMP32D5SFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
auf Bestellung 218138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
DMP6050SFG-7 DMP6050SFG.pdf
DMP6050SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
20+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
DMT10H010LPS-13 DMT10H010LPS.pdf
DMT10H010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 10763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.5 EUR
10+ 2.05 EUR
100+ 1.59 EUR
500+ 1.35 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 8
DMT6009LFG-7 DMT6009LFG.pdf
DMT6009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 4168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
13+ 1.4 EUR
100+ 1.09 EUR
500+ 0.92 EUR
1000+ 0.75 EUR
Mindestbestellmenge: 11
DMT6010LPS-13 DMT6010LPS.pdf
DMT6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
14+ 1.3 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 12
DMTH6009LK3-13 DMTH6009LK3.pdf
DMTH6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
DMTH6010SK3-13 DMTH6010SK3.pdf
DMTH6010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
10+ 1.76 EUR
100+ 1.37 EUR
500+ 1.13 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 9
DT1240V3-04LP-7 DT1240V3-04LP.pdf
DT1240V3-04LP-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.8V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 68196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
40+ 0.44 EUR
100+ 0.31 EUR
500+ 0.24 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 35
DT1240V3-04SO-7 DT1240V3-04SO.pdf
DT1240V3-04SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8VC SOT26
auf Bestellung 2646000 Stücke:
Lieferzeit 10-14 Tag (e)
SBR10U45D1-13 SBR10U45D1.pdf
SBR10U45D1-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 47199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
14+ 1.3 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 12
SBR12M120P5-13 SBR12M120P5.pdf
SBR12M120P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.19 EUR
100+ 0.82 EUR
Mindestbestellmenge: 13
APD240VRTR-G1 APD240.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A DO214AC
auf Bestellung 750030000 Stücke:
Lieferzeit 10-14 Tag (e)
DT1240V3-04SO-7 DT1240V3-04SO.pdf
DT1240V3-04SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 8.8VC SOT26
auf Bestellung 2646000 Stücke:
Lieferzeit 10-14 Tag (e)
AH1815-P-A AH1815.pdf
AH1815-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR 3SIP
Features: Sleep Mode
Packaging: Tape & Box (TB)
Package / Case: 3-SIP, Formed Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±54mT Trip, ±49mT Release
Current - Output (Max): 2.5mA
Current - Supply (Max): 12mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.45 EUR
Mindestbestellmenge: 4000
DMG7401SFGQ-13 DMG7401SFGQ.pdf
DMG7401SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A POWERDI3333
Produkt ist nicht verfügbar
DMP4025SFGQ-13 DMP4025SFGQ.pdf
DMP4025SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
APR34150MTR-G1 APR34150.pdf
APR34150MTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Produkt ist nicht verfügbar
APR34150MTR-G1 APR34150.pdf
APR34150MTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Produkt ist nicht verfügbar
DMN61D8LQ-13 DMN61D8LQ.pdf
DMN61D8LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.23 EUR
30000+ 0.22 EUR
Mindestbestellmenge: 10000
AP91352MN1-DT8-7 AP91352.pdf
AP91352MN1-DT8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
DMN61D8LQ-7 DMN61D8LQ.pdf
DMN61D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
6000+ 0.24 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 3000
AP91352MN1-DT8-7 AP91352.pdf
AP91352MN1-DT8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 12WQFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 3.6V ~ 12V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: W-QFN3020-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
DMN61D8LQ-7 DMN61D8LQ.pdf
DMN61D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 133565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
28+ 0.63 EUR
100+ 0.44 EUR
500+ 0.34 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 24
DMTH6004SCTB-13 DMTH6004SCTB.pdf
DMTH6004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 23190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.8 EUR
10+ 3.16 EUR
100+ 2.51 EUR
Mindestbestellmenge: 5
NX7011D0074.250000 NX701.pdf
NX7011D0074.250000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 74.2500MHZ CMOS SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 60mA
Height - Seated (Max): 0.061" (1.55mm)
Frequency: 74.25 MHz
Base Resonator: Crystal
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
10+ 2.72 EUR
50+ 2.65 EUR
Mindestbestellmenge: 7
WF9021B0622.080000 WF902_RevA.pdf
WF9021B0622.080000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.551" L x 0.354" W (14.00mm x 9.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Height - Seated (Max): 0.205" (5.20mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+55.7 EUR
10+ 51.98 EUR
WF7021B0622.080000 WF702_RevA.pdf
WF7021B0622.080000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 622.0800MHZ LVPECL
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.295" L x 0.197" W (7.50mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Height - Seated (Max): 0.098" (2.50mm)
Part Status: Active
Frequency: 622.08 MHz
Base Resonator: Crystal
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+45.41 EUR
10+ 42.39 EUR
HX2127001Q HX2127001Q_Ver.A.pdf
HX2127001Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 27.0000MHZ LVCMOS
Produkt ist nicht verfügbar
HX3124501Q HX3124501Q_Ver.A.pdf
HX3124501Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.545452MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.8V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Active
Frequency: 24.545452 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
HX3125006Q HX3125006Q_Ver.A.pdf
HX3125006Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±30ppm
Voltage - Supply: 3.3V
Ratings: AEC-Q200
Current - Supply (Max): 20mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
HX3127001Q HX3127001Q_Ver.01.pdf
HX3127001Q
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 27.0000MHZ LVCMOS
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
10+ 2.69 EUR
50+ 2.63 EUR
100+ 2.25 EUR
Mindestbestellmenge: 7
HX31330001 HX31330001_Ver.A.pdf
HX31330001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 33.0000MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 90°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 10mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 33 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.35 EUR
50+ 2.3 EUR
100+ 1.97 EUR
Mindestbestellmenge: 8
HX3212F0040.000000 HX3212F0040.000000_Ver%20A.pdf
HX3212F0040.000000
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 40.0000MHZ LVCMOS
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
HX51706001 HX51706001_Ver.A.pdf
HX51706001
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 70.6560MHZ LVCMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.053" (1.35mm)
Frequency: 70.656 MHz
Base Resonator: Crystal
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.66 EUR
10+ 3.49 EUR
50+ 3.41 EUR
100+ 2.92 EUR
Mindestbestellmenge: 5
AH3772-P-B
AH3772-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 28V
Technology: Hall Effect
Sensing Range: 4mT Trip, -4mT Release
Current - Output (Max): 60mA
Current - Supply (Max): 4mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.25 EUR
19+ 0.95 EUR
25+ 0.82 EUR
50+ 0.79 EUR
100+ 0.67 EUR
500+ 0.59 EUR
1000+ 0.51 EUR
Mindestbestellmenge: 15
AH3774-P-B AH3774.pdf
AH3774-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
15+ 1.19 EUR
25+ 1.05 EUR
50+ 0.87 EUR
100+ 0.74 EUR
500+ 0.64 EUR
1000+ 0.56 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 13
AH3775-P-B AH3775.pdf
AH3775-P-B
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 93010000 Stücke:
Lieferzeit 10-14 Tag (e)
AH3776-P-B AH3776.pdf
AH3776-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
AH3777-P-B AH3777.pdf
AH3777-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
AH3781-P-B
AH3781-P-B
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 28V
Technology: Hall Effect
Sensing Range: 4mT Trip, -4mT Release
Current - Output (Max): 60mA
Current - Supply (Max): 5.8mA
Supplier Device Package: 3-SIP
Test Condition: -40°C ~ 125°C
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
18+ 0.98 EUR
100+ 0.69 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 14
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