Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75523) > Seite 327 nach 1259
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MMSZ5240BQ-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 182770 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR10E45P5-7 | Diodes Incorporated |
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DMP2002UPS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP22M2UPS-13 | Diodes Incorporated |
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DMP6050SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 340000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8012LK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8012LK3-13 | Diodes Incorporated |
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auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8012LPS-13 | Diodes Incorporated |
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auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DT6250-06MR-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-MSOP Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
auf Bestellung 165000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT10U60D1-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
auf Bestellung 107500 Stücke: Lieferzeit 10-14 Tag (e) |
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APT17NTR-G1 | Diodes Incorporated |
Description: TRANS NPN 480V 0.05A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 200 mW |
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D5V0M5B6LP16-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: U-DFN1616-6 Bidirectional Channels: 5 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 130W Power Line Protection: No |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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DESD5V0U1BA-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power Line Protection: No Part Status: Active |
auf Bestellung 2052000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC10H170SFJ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1011UCB9-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SVT-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 1815000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U10LP-7 | Diodes Incorporated |
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auf Bestellung 300012000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U15LP-7 | Diodes Incorporated |
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auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U30LP-7 | Diodes Incorporated |
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auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTR2112F-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7VC DFN1010-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
auf Bestellung 235000 Stücke: Lieferzeit 10-14 Tag (e) |
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR10E45P5-13 | Diodes Incorporated |
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auf Bestellung 9918 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT3M60SA-13 | Diodes Incorporated |
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SBRT3U60SA-13 | Diodes Incorporated |
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D5V0L1B2DLP3-7 | Diodes Incorporated |
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D5V0M1U2S9-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
auf Bestellung 1370000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SVT-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT3U45SAF-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
auf Bestellung 270000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR10E45P5-7 | Diodes Incorporated |
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auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2002UPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
auf Bestellung 58792 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP22M2UPS-13 | Diodes Incorporated |
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auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6050SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 343452 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8012LK3-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
auf Bestellung 19605 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH8012LK3-13 | Diodes Incorporated |
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DMTH8012LPS-13 | Diodes Incorporated |
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auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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DT6250-06MR-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-MSOP Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
auf Bestellung 166066 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT10U60D1-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
auf Bestellung 108738 Stücke: Lieferzeit 10-14 Tag (e) |
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APT17NTR-G1 | Diodes Incorporated |
Description: TRANS NPN 480V 0.05A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 200 mW |
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D5V0M5B6LP16-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: U-DFN1616-6 Bidirectional Channels: 5 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 130W Power Line Protection: No |
auf Bestellung 44845 Stücke: Lieferzeit 10-14 Tag (e) |
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DESD5V0U1BA-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power Line Protection: No Part Status: Active |
auf Bestellung 2053624 Stücke: Lieferzeit 10-14 Tag (e) |
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DMHC10H170SFJ-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
auf Bestellung 8622 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1011UCB9-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
auf Bestellung 75039 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SVT-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 1820167 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U10LP-7 | Diodes Incorporated |
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auf Bestellung 300012000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U15LP-7 | Diodes Incorporated |
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auf Bestellung 285012000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT4U30LP-7 | Diodes Incorporated |
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auf Bestellung 134990 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT6U10LP-7 | Diodes Incorporated |
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auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT6U20LP-7 | Diodes Incorporated |
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auf Bestellung 645 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT6U45LP-7 | Diodes Incorporated |
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auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTR2112F-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA |
auf Bestellung 19077 Stücke: Lieferzeit 10-14 Tag (e) |
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AP1695-20CS7-13 | Diodes Incorporated |
Description: IC LED DRIVER OFFL TRIAC 2A 7SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 105°C (TA) Applications: Lighting Current - Output / Channel: 2A Internal Switch(s): Yes Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 7-SO Dimming: Triac Voltage - Supply (Min): 7V Voltage - Supply (Max): 25V |
auf Bestellung 3970 Stücke: Lieferzeit 10-14 Tag (e) |
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7VC DFN1010-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
auf Bestellung 238163 Stücke: Lieferzeit 10-14 Tag (e) |
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SBR10E45P5-13 | Diodes Incorporated |
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auf Bestellung 9918 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRT3M60SA-13 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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SBRT3U60SA-13 | Diodes Incorporated |
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auf Bestellung 918 Stücke: Lieferzeit 10-14 Tag (e) |
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D5V0L1B2DLP3-7 | Diodes Incorporated |
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Produkt ist nicht verfügbar |
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D5V0M1U2S9-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
auf Bestellung 1385535 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SVT-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
MMSZ5240BQ-7-F |
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Hersteller: Diodes Incorporated
Description: DIODE ZENER 10V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 10V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 182770 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.37 EUR |
69+ | 0.26 EUR |
139+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.073 EUR |
SBR10E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
Produkt ist nicht verfügbar
DMP2002UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.6 EUR |
5000+ | 1.54 EUR |
DMP22M2UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V POWERDI5060-8
Description: MOSFET P-CH 20V POWERDI5060-8
Produkt ist nicht verfügbar
DMP6050SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 340000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.51 EUR |
5000+ | 0.48 EUR |
12500+ | 0.45 EUR |
DMT8012LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 44A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.62 EUR |
5000+ | 0.59 EUR |
12500+ | 0.56 EUR |
DMTH8012LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)DMTH8012LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)DT6250-06MR-13 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.18 EUR |
SBRT10U60D1-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SBR 60V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.6 EUR |
5000+ | 0.57 EUR |
12500+ | 0.54 EUR |
APT17NTR-G1 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 480V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Description: TRANS NPN 480V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
D5V0M5B6LP16-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
9000+ | 0.13 EUR |
30000+ | 0.12 EUR |
DESD5V0U1BA-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 2052000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.067 EUR |
6000+ | 0.062 EUR |
9000+ | 0.051 EUR |
30000+ | 0.05 EUR |
75000+ | 0.045 EUR |
150000+ | 0.039 EUR |
DMHC10H170SFJ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.84 EUR |
6000+ | 0.8 EUR |
DMP1011UCB9-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.51 EUR |
6000+ | 0.48 EUR |
9000+ | 0.45 EUR |
DMP6110SVT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 1815000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.32 EUR |
6000+ | 0.31 EUR |
9000+ | 0.29 EUR |
30000+ | 0.28 EUR |
SBRT4U10LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
auf Bestellung 300012000 Stücke:
Lieferzeit 10-14 Tag (e)SBRT4U15LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 15V 4A U-DFN2020-2
Description: DIODE SBR 15V 4A U-DFN2020-2
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)SBRT4U30LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
Description: DIODE SBR 30V 4A U-DFN2020-2
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.43 EUR |
6000+ | 0.42 EUR |
ZXTR2112F-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 12V 15MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.26 EUR |
15000+ | 0.24 EUR |
D3V3L2B3LP10-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7VC DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7VC DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.16 EUR |
10000+ | 0.14 EUR |
25000+ | 0.13 EUR |
50000+ | 0.12 EUR |
D5V0F2B3LP10-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.17 EUR |
SBR10E45P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
auf Bestellung 9918 Stücke:
Lieferzeit 10-14 Tag (e)SBRT3M60SA-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
SBRT3U60SA-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
D5V0L1B2DLP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5V 14V ESN0603-2
Description: TVS DIODE 5V 14V ESN0603-2
Produkt ist nicht verfügbar
D5V0M1U2S9-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
auf Bestellung 1370000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.039 EUR |
DMP6110SVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.3 EUR |
30000+ | 0.29 EUR |
SBRT3U45SAF-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.15 EUR |
50000+ | 0.12 EUR |
SBR10E45P5-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)DMP2002UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
auf Bestellung 58792 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.54 EUR |
10+ | 2.95 EUR |
100+ | 2.34 EUR |
500+ | 1.98 EUR |
1000+ | 1.68 EUR |
DMP22M2UPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V POWERDI5060-8
Description: MOSFET P-CH 20V POWERDI5060-8
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)DMP6050SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 343452 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
16+ | 1.15 EUR |
100+ | 0.8 EUR |
500+ | 0.67 EUR |
1000+ | 0.57 EUR |
DMT8012LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Description: MOSFET N-CH 80V 44A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 19605 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.5 EUR |
15+ | 1.23 EUR |
100+ | 0.95 EUR |
500+ | 0.81 EUR |
1000+ | 0.66 EUR |
DMTH8012LK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
Produkt ist nicht verfügbar
DMTH8012LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)DT6250-06MR-13 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
auf Bestellung 166066 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
46+ | 0.39 EUR |
100+ | 0.27 EUR |
500+ | 0.21 EUR |
1000+ | 0.18 EUR |
SBRT10U60D1-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SBR 60V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
auf Bestellung 108738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
15+ | 1.18 EUR |
100+ | 0.92 EUR |
500+ | 0.78 EUR |
1000+ | 0.64 EUR |
APT17NTR-G1 |
Hersteller: Diodes Incorporated
Description: TRANS NPN 480V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Description: TRANS NPN 480V 0.05A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 20V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
D5V0M5B6LP16-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
auf Bestellung 44845 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
38+ | 0.47 EUR |
100+ | 0.24 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
DESD5V0U1BA-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 2053624 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.39 EUR |
65+ | 0.27 EUR |
133+ | 0.13 EUR |
500+ | 0.11 EUR |
1000+ | 0.077 EUR |
DMHC10H170SFJ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
auf Bestellung 8622 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.02 EUR |
11+ | 1.65 EUR |
100+ | 1.28 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
DMP1011UCB9-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
auf Bestellung 75039 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.34 EUR |
16+ | 1.15 EUR |
100+ | 0.8 EUR |
500+ | 0.67 EUR |
1000+ | 0.57 EUR |
DMP6110SVT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 1820167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.45 EUR |
1000+ | 0.36 EUR |
SBRT4U10LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
auf Bestellung 300012000 Stücke:
Lieferzeit 10-14 Tag (e)SBRT4U15LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 15V 4A U-DFN2020-2
Description: DIODE SBR 15V 4A U-DFN2020-2
auf Bestellung 285012000 Stücke:
Lieferzeit 10-14 Tag (e)SBRT4U30LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
Description: DIODE SBR 30V 4A U-DFN2020-2
auf Bestellung 134990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.11 EUR |
19+ | 0.98 EUR |
100+ | 0.75 EUR |
500+ | 0.59 EUR |
1000+ | 0.47 EUR |
SBRT6U10LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 6A U-DFN3030-8
Description: DIODE SBR 10V 6A U-DFN3030-8
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)SBRT6U20LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 20V 6A U-DFN3030-8
Description: DIODE SBR 20V 6A U-DFN3030-8
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)SBRT6U45LP-7 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 6A U-DFN3030-8
Description: DIODE SBR 45V 6A U-DFN3030-8
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)ZXTR2112F-7 |
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Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 12V 15MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
auf Bestellung 19077 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
27+ | 0.66 EUR |
29+ | 0.62 EUR |
100+ | 0.49 EUR |
250+ | 0.46 EUR |
500+ | 0.39 EUR |
1000+ | 0.3 EUR |
AP1695-20CS7-13 |
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
12+ | 1.47 EUR |
25+ | 1.4 EUR |
100+ | 1.15 EUR |
250+ | 1.07 EUR |
500+ | 0.95 EUR |
1000+ | 0.75 EUR |
D3V3L2B3LP10-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7VC DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7VC DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
auf Bestellung 238163 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
32+ | 0.56 EUR |
100+ | 0.35 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
2000+ | 0.16 EUR |
D5V0F2B3LP10-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.24 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
SBR10E45P5-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
auf Bestellung 9918 Stücke:
Lieferzeit 10-14 Tag (e)SBRT3M60SA-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
SBRT3U60SA-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Description: DIODE SBR 60V 3A SMA
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)D5V0L1B2DLP3-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5V 14V ESN0603-2
Description: TVS DIODE 5V 14V ESN0603-2
Produkt ist nicht verfügbar
D5V0M1U2S9-7 |
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Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
auf Bestellung 1385535 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
88+ | 0.2 EUR |
181+ | 0.098 EUR |
500+ | 0.081 EUR |
1000+ | 0.056 EUR |
2000+ | 0.049 EUR |
5000+ | 0.045 EUR |
DMP6110SVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)