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DMN61D8LQ-13

DMN61D8LQ-13 Diodes Incorporated

DMN61D8LQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.23 EUR
30000+ 0.22 EUR
Mindestbestellmenge: 10000
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Technische Details DMN61D8LQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 470MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Power Dissipation (Max): 390mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V.

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DMN61D8LQ-13 DMN61D8LQ-13 Hersteller : Diodes Incorporated DIOD_S_A0002832699_1-2541996.pdf MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW
auf Bestellung 15687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.75 EUR
10+ 0.65 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
2500+ 0.24 EUR
10000+ 0.22 EUR
Mindestbestellmenge: 4
DMN61D8LQ-13 DMN61D8LQ-13 Hersteller : Diodes Incorporated DMN61D8LQ.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 189447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
27+ 0.65 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
5000+ 0.24 EUR
Mindestbestellmenge: 24
DMN61D8LQ-13 DMN61D8LQ-13 Hersteller : Diodes Inc 41592961582515dmn61d8lq.pdf Trans MOSFET N-CH 60V 0.47A Automotive 3-Pin SOT-23 T/R
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DMN61D8LQ-13 Hersteller : DIODES INCORPORATED DMN61D8LQ.pdf DMN61D8LQ-13 SMD N channel transistors
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