Produkte > YAGEO XSEMI > Alle Produkte des Herstellers YAGEO XSEMI (301) > Seite 1 nach 6
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XP10A250YT | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 3 x 3 |
Produkt ist nicht verfügbar |
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XP10A250YT | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 3 x 3 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10A250YT | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10C150M | YAGEO XSemi |
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auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R5XT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 142A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP10N3R5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10N3R5XT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 142A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP10N3R5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10N3R5XT | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R8IT | YAGEO XSEMI |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67.7A (Ta) Rds On (Max) @ Id, Vgs: 3.88mOhm @ 35A, 10V Power Dissipation (Max): 1.92W (Ta), 32.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R8IT | YAGEO XSemi |
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auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R8P | YAGEO XSEMI |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.88mOhm @ 60A, 10V Power Dissipation (Max): 2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R8P | YAGEO XSemi |
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auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA011H | YAGEO XSemi |
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auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA011H | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V |
Produkt ist nicht verfügbar |
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XP10NA011H | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA011H | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 48.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP10NA011 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10NA011H | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 48.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP10NA011 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10NA011J | YAGEO XSemi |
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auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA011J | YAGEO XSEMI |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 1.13W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251S Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA1R5TL | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.75W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA1R5TL | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 347A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.75W Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: XP10NA1R5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10NA1R5TL | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.75W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V |
Produkt ist nicht verfügbar |
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XP10NA1R5TL | YAGEO XSemi |
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auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA1R5TL | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 347A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.75W Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: XP10NA1R5 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0015ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10NA8R4IT | YAGEO XSemi |
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auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA8R4IT | YAGEO XSEMI |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V Power Dissipation (Max): 1.92W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3248 pF @ 80 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10P135YT | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V Power Dissipation (Max): 3.13W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PMPAK (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V |
Produkt ist nicht verfügbar |
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XP10P500N | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 1.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP10P500N_ Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10P500N | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V |
Produkt ist nicht verfügbar |
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XP10P500N | YAGEO XSemi |
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auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10P500N | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10P500N | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 1.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP10P500N_ Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN028YT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.125W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP10TN028 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN028YT | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN028YT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.125W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP10TN028 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.028ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN135H | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135H | YAGEO XSemi |
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auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135H | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V |
Produkt ist nicht verfügbar |
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XP10TN135K | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.78W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: XP10TN135K Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.115ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN135K | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.78W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: XP10TN135K Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.115ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN135K | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V Power Dissipation (Max): 2.78W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
Produkt ist nicht verfügbar |
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XP10TN135K | YAGEO XSemi |
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auf Bestellung 2937 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135K | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V Power Dissipation (Max): 2.78W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135N | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
Produkt ist nicht verfügbar |
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XP10TN135N | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135N | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP10TN135N Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.112ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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XP10TN135N | YAGEO XSemi |
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auf Bestellung 1235 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135N | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP10TN135N Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.112ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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XP1504MT | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP1504 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.059ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP1504MT | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP1504 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.059ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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XP1504YT | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP2301GN | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V |
Produkt ist nicht verfügbar |
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XP2301GN | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP2301GN | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V |
auf Bestellung 996 Stücke: Lieferzeit 10-14 Tag (e) |
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XP2301GN | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.25V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: XP2301 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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XP2301GN | YAGEO XSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.25V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: XP2301 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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XP2302GN | YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V |
Produkt ist nicht verfügbar |
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XP2302GN | YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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XP2302GN | YAGEO XSemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP2306GN | YAGEO XSEMI |
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.25V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP2306 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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XP2306GN | YAGEO XSEMI |
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.25V euEccn: NLR Verlustleistung: 1.38W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: XP2306 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
XP10A250YT |
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Hersteller: YAGEO XSEMI
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Produkt ist nicht verfügbar
XP10A250YT |
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Hersteller: YAGEO XSEMI
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 3 x 3
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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9+ | 2.09 EUR |
11+ | 1.71 EUR |
100+ | 1.33 EUR |
500+ | 1.13 EUR |
1000+ | 0.92 EUR |
XP10A250YT |
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Hersteller: YAGEO XSemi
MOSFETs Dual N Channe l 100V 2.1A PMPAK-3x
MOSFETs Dual N Channe l 100V 2.1A PMPAK-3x
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.04 EUR |
10+ | 1.69 EUR |
100+ | 1.32 EUR |
500+ | 1.12 EUR |
1000+ | 0.91 EUR |
3000+ | 0.86 EUR |
6000+ | 0.81 EUR |
XP10C150M |
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Hersteller: YAGEO XSemi
MOSFET Complementary N ch + P ch 100V/-1
MOSFET Complementary N ch + P ch 100V/-1
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.34 EUR |
10+ | 2.78 EUR |
100+ | 2.22 EUR |
250+ | 2.04 EUR |
500+ | 1.85 EUR |
1000+ | 1.69 EUR |
3000+ | 1.46 EUR |
XP10N3R5XT |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 142A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10N3R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0035ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 142A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10N3R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0035ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10N3R5XT |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 142A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10N3R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0035ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10N3R5XT - Leistungs-MOSFET, n-Kanal, 100 V, 142 A, 0.0035 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 142A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10N3R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0035ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10N3R5XT |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 28. 5A PMPAK-5x6X
MOSFET N-CH 100V 28. 5A PMPAK-5x6X
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.67 EUR |
10+ | 9.15 EUR |
25+ | 8.31 EUR |
100+ | 7.62 EUR |
250+ | 7.18 EUR |
500+ | 6.72 EUR |
1000+ | 6.39 EUR |
XP10N3R8IT |
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Hersteller: YAGEO XSEMI
Description: FET N-CH 100V 67.7A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.88mOhm @ 35A, 10V
Power Dissipation (Max): 1.92W (Ta), 32.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V
Description: FET N-CH 100V 67.7A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.88mOhm @ 35A, 10V
Power Dissipation (Max): 1.92W (Ta), 32.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.81 EUR |
50+ | 10.22 EUR |
100+ | 9.15 EUR |
500+ | 8.07 EUR |
1000+ | 7.26 EUR |
XP10N3R8IT |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 67. 7A TO-220CFM-T
MOSFET N-CH 100V 67. 7A TO-220CFM-T
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.72 EUR |
10+ | 10.89 EUR |
25+ | 9.89 EUR |
100+ | 9.06 EUR |
250+ | 8.54 EUR |
500+ | 8.01 EUR |
1000+ | 7.2 EUR |
XP10N3R8P |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.88mOhm @ 60A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V
Description: MOSFET N-CH 100V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.88mOhm @ 60A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.97 EUR |
50+ | 9.55 EUR |
100+ | 8.55 EUR |
500+ | 7.54 EUR |
XP10N3R8P |
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Hersteller: YAGEO XSemi
MOSFETs N-CH 100V 130 A TO-220
MOSFETs N-CH 100V 130 A TO-220
auf Bestellung 989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.16 EUR |
10+ | 10.42 EUR |
25+ | 9.47 EUR |
100+ | 8.69 EUR |
250+ | 8.17 EUR |
500+ | 7.66 EUR |
1000+ | 6.9 EUR |
XP10NA011H |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 48. 5A TO-252
MOSFET N-CH 100V 48. 5A TO-252
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.32 EUR |
10+ | 4.47 EUR |
25+ | 4.21 EUR |
100+ | 3.61 EUR |
250+ | 3.4 EUR |
500+ | 3.2 EUR |
1000+ | 2.75 EUR |
XP10NA011H |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 48.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
Description: MOSFET N-CH 100V 48.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
Produkt ist nicht verfügbar
XP10NA011H |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 48.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
Description: MOSFET N-CH 100V 48.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.26 EUR |
10+ | 4.42 EUR |
100+ | 3.58 EUR |
500+ | 3.18 EUR |
1000+ | 2.72 EUR |
XP10NA011H |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10NA011H - Leistungs-MOSFET, n-Kanal, 100 V, 48.5 A, 0.011 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10NA011 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP10NA011H - Leistungs-MOSFET, n-Kanal, 100 V, 48.5 A, 0.011 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10NA011 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10NA011H |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10NA011H - Leistungs-MOSFET, n-Kanal, 100 V, 48.5 A, 0.011 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10NA011 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP10NA011H - Leistungs-MOSFET, n-Kanal, 100 V, 48.5 A, 0.011 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 48.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10NA011 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10NA011J |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 48. 5A TO-251
MOSFET N-CH 100V 48. 5A TO-251
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.03 EUR |
10+ | 4.22 EUR |
25+ | 4 EUR |
100+ | 3.41 EUR |
250+ | 3.24 EUR |
500+ | 3.04 EUR |
1000+ | 2.6 EUR |
XP10NA011J |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 48.5A TO251S
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
Description: MOSFET N-CH 100V 48.5A TO251S
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.96 EUR |
80+ | 3.38 EUR |
560+ | 3 EUR |
XP10NA1R5TL |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 300A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V
Description: MOSFET N-CH 100V 300A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.29 EUR |
10+ | 23.18 EUR |
100+ | 20.04 EUR |
500+ | 18.16 EUR |
XP10NA1R5TL |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10NA1R5TL - Leistungs-MOSFET, n-Kanal, 100 V, 347 A, 0.0015 ohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 347A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 3.75W
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP10NA1R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10NA1R5TL - Leistungs-MOSFET, n-Kanal, 100 V, 347 A, 0.0015 ohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 347A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 3.75W
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP10NA1R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)XP10NA1R5TL |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 300A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V
Description: MOSFET N-CH 100V 300A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16960 pF @ 80 V
Produkt ist nicht verfügbar
XP10NA1R5TL |
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Hersteller: YAGEO XSemi
MOSFETs N-CH 100V 300 A TOLL
MOSFETs N-CH 100V 300 A TOLL
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.12 EUR |
10+ | 23.02 EUR |
25+ | 22.39 EUR |
50+ | 21.16 EUR |
100+ | 19.91 EUR |
250+ | 19.29 EUR |
500+ | 18.04 EUR |
XP10NA1R5TL |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10NA1R5TL - Leistungs-MOSFET, n-Kanal, 100 V, 347 A, 0.0015 ohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 347A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 3.75W
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP10NA1R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10NA1R5TL - Leistungs-MOSFET, n-Kanal, 100 V, 347 A, 0.0015 ohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 347A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 3.75W
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP10NA1R5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0015ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)XP10NA8R4IT |
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Hersteller: YAGEO XSemi
MOSFETs N-CH 100V 44A TO-220CFM-T
MOSFETs N-CH 100V 44A TO-220CFM-T
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.94 EUR |
10+ | 6.67 EUR |
25+ | 6.3 EUR |
100+ | 5.4 EUR |
250+ | 5.09 EUR |
500+ | 4.79 EUR |
1000+ | 4.1 EUR |
XP10NA8R4IT |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 44A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V
Power Dissipation (Max): 1.92W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3248 pF @ 80 V
Description: MOSFET N-CH 100V 44A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V
Power Dissipation (Max): 1.92W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3248 pF @ 80 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.01 EUR |
50+ | 6.35 EUR |
100+ | 5.44 EUR |
500+ | 4.84 EUR |
1000+ | 4.14 EUR |
XP10P135YT |
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Hersteller: YAGEO XSEMI
Description: MOSFET P CH -100V -3.4A PMPAK3X
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 3.13W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PMPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Description: MOSFET P CH -100V -3.4A PMPAK3X
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 3.13W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PMPAK (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
Produkt ist nicht verfügbar
XP10P500N |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10P500N - Leistungs-MOSFET, p-Kanal, 100 V, 1.2 A, 0.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10P500N_ Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10P500N - Leistungs-MOSFET, p-Kanal, 100 V, 1.2 A, 0.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10P500N_ Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)XP10P500N |
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Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 100V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Description: MOSFET P-CH 100V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Produkt ist nicht verfügbar
XP10P500N |
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Hersteller: YAGEO XSemi
MOSFET P-CH -100V -1 .2A SOT-23
MOSFET P-CH -100V -1 .2A SOT-23
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.5 EUR |
10+ | 2.04 EUR |
100+ | 1.59 EUR |
500+ | 1.35 EUR |
1000+ | 1.15 EUR |
3000+ | 0.98 EUR |
XP10P500N |
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Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 100V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Description: MOSFET P-CH 100V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.48 EUR |
10+ | 2.03 EUR |
100+ | 1.58 EUR |
500+ | 1.34 EUR |
XP10P500N |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10P500N - Leistungs-MOSFET, p-Kanal, 100 V, 1.2 A, 0.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10P500N_ Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10P500N - Leistungs-MOSFET, p-Kanal, 100 V, 1.2 A, 0.5 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10P500N_ Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN028YT |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 3.125W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10TN028 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 3.125W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10TN028 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN028YT |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 7.5 A PMPAK-3x3
MOSFET N-CH 100V 7.5 A PMPAK-3x3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.92 EUR |
10+ | 3.26 EUR |
100+ | 2.6 EUR |
250+ | 2.41 EUR |
500+ | 2.18 EUR |
1000+ | 1.99 EUR |
3000+ | 1.71 EUR |
XP10TN028YT |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 3.125W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10TN028 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN028YT - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.028 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 3.125W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP10TN028 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.028ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN135H |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 8.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V
Description: MOSFET N-CH 100V 8.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.6 EUR |
10+ | 2.12 EUR |
100+ | 1.65 EUR |
500+ | 1.4 EUR |
1000+ | 1.14 EUR |
XP10TN135H |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 8.1 A TO-252
MOSFET N-CH 100V 8.1 A TO-252
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.55 EUR |
10+ | 2.09 EUR |
100+ | 1.64 EUR |
500+ | 1.39 EUR |
1000+ | 1.13 EUR |
3000+ | 1.06 EUR |
6000+ | 1.02 EUR |
XP10TN135H |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 8.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V
Description: MOSFET N-CH 100V 8.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V
Produkt ist nicht verfügbar
XP10TN135K |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN135K - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.115 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.78W
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135K Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN135K - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.115 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.78W
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135K Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN135K |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN135K - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.115 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.78W
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135K Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN135K - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.115 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.78W
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135K Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.115ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN135K |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Produkt ist nicht verfügbar
XP10TN135K |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 3A SOT-223
MOSFET N-CH 100V 3A SOT-223
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.88 EUR |
10+ | 1.53 EUR |
100+ | 1.2 EUR |
500+ | 1.01 EUR |
1000+ | 0.86 EUR |
3000+ | 0.73 EUR |
XP10TN135K |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3A, 10V
Power Dissipation (Max): 2.78W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
12+ | 1.55 EUR |
100+ | 1.2 EUR |
500+ | 1.02 EUR |
XP10TN135N |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Produkt ist nicht verfügbar
XP10TN135N |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 2.1A 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
27+ | 0.67 EUR |
100+ | 0.47 EUR |
500+ | 0.36 EUR |
XP10TN135N |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN135N - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.112 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135N Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN135N - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.112 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135N Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)XP10TN135N |
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Hersteller: YAGEO XSemi
MOSFET N-CH 100V 2.1 A SOT-23
MOSFET N-CH 100V 2.1 A SOT-23
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.77 EUR |
10+ | 0.67 EUR |
100+ | 0.5 EUR |
500+ | 0.39 EUR |
1000+ | 0.3 EUR |
3000+ | 0.28 EUR |
9000+ | 0.24 EUR |
XP10TN135N |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP10TN135N - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.112 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135N Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP10TN135N - Leistungs-MOSFET, n-Kanal, 100 V, 3 A, 0.112 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP10TN135N Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 2600 Stücke:
Lieferzeit 14-21 Tag (e)XP1504MT |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP1504MT - Leistungs-MOSFET, n-Kanal, 150 V, 15.8 A, 0.059 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP1504 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.059ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP1504MT - Leistungs-MOSFET, n-Kanal, 150 V, 15.8 A, 0.059 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP1504 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.059ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP1504MT |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP1504MT - Leistungs-MOSFET, n-Kanal, 150 V, 15.8 A, 0.059 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP1504 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.059ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP1504MT - Leistungs-MOSFET, n-Kanal, 150 V, 15.8 A, 0.059 ohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP1504 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.059ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)XP1504YT |
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Hersteller: YAGEO XSemi
MOSFET N-CH 150V 5A PMPAK-3x3
MOSFET N-CH 150V 5A PMPAK-3x3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.31 EUR |
10+ | 2.75 EUR |
100+ | 2.2 EUR |
250+ | 2.01 EUR |
500+ | 1.83 EUR |
1000+ | 1.58 EUR |
3000+ | 1.5 EUR |
XP2301GN |
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Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V
Produkt ist nicht verfügbar
XP2301GN |
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Hersteller: YAGEO XSemi
MOSFET P-CH -20V -2. 5A SOT-23S
MOSFET P-CH -20V -2. 5A SOT-23S
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.78 EUR |
10+ | 0.65 EUR |
100+ | 0.44 EUR |
1000+ | 0.25 EUR |
3000+ | 0.23 EUR |
9000+ | 0.2 EUR |
24000+ | 0.18 EUR |
XP2301GN |
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Hersteller: YAGEO XSEMI
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V
Description: MOSFET P-CH 20V 2.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 20 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
28+ | 0.63 EUR |
100+ | 0.38 EUR |
500+ | 0.35 EUR |
XP2301GN |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP2301GN - Leistungs-MOSFET, p-Kanal, 20 V, 2.6 A, 0.13 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: XP2301 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP2301GN - Leistungs-MOSFET, p-Kanal, 20 V, 2.6 A, 0.13 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: XP2301 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)XP2301GN |
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Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP2301GN - Leistungs-MOSFET, p-Kanal, 20 V, 2.6 A, 0.13 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: XP2301 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (17-Jan-2023)
Description: YAGEO XSEMI - XP2301GN - Leistungs-MOSFET, p-Kanal, 20 V, 2.6 A, 0.13 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pins
Produktpalette: XP2301 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)XP2302GN |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V
Produkt ist nicht verfügbar
XP2302GN |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1 EUR |
21+ | 0.86 EUR |
100+ | 0.6 EUR |
500+ | 0.47 EUR |
XP2302GN |
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Hersteller: YAGEO XSemi
MOSFET N-CH 20V 3.2A SOT-23
MOSFET N-CH 20V 3.2A SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 0.98 EUR |
10+ | 0.85 EUR |
100+ | 0.64 EUR |
500+ | 0.5 EUR |
1000+ | 0.39 EUR |
3000+ | 0.35 EUR |
9000+ | 0.31 EUR |
XP2306GN |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP2306 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP2306 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)XP2306GN |
Hersteller: YAGEO XSEMI
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP2306 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Boric acid (14-Jun-2023)
Description: YAGEO XSEMI - XP2306GN - Leistungs-MOSFET, n-Kanal, 20 V, 5.3 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.25V
euEccn: NLR
Verlustleistung: 1.38W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: XP2306 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Boric acid (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)