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XP10N3R8P YAGEO XSEMI
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Description: MOSFET N-CH 100V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.88mOhm @ 60A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.97 EUR |
50+ | 9.55 EUR |
100+ | 8.55 EUR |
500+ | 7.54 EUR |
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Technische Details XP10N3R8P YAGEO XSEMI
Description: MOSFET N-CH 100V 130A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 3.88mOhm @ 60A, 10V, Power Dissipation (Max): 2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 80 V.
Weitere Produktangebote XP10N3R8P nach Preis ab 6.9 EUR bis 12.16 EUR
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XP10N3R8P | Hersteller : XSemi |
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auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10N3R8P | Hersteller : YAGEO XSemi |
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auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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