![XP10TN135H XP10TN135H](https://www.mouser.com/images/xsemi/lrg/TO-252_SPL.jpg)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.55 EUR |
10+ | 2.09 EUR |
100+ | 1.64 EUR |
500+ | 1.39 EUR |
1000+ | 1.13 EUR |
3000+ | 1.06 EUR |
6000+ | 1.02 EUR |
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Technische Details XP10TN135H YAGEO XSemi
Description: MOSFET N-CH 100V 8.1A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 20.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V.
Weitere Produktangebote XP10TN135H nach Preis ab 1.14 EUR bis 2.6 EUR
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XP10TN135H | Hersteller : YAGEO XSEMI |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10TN135H | Hersteller : YAGEO XSEMI |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 50 V |
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