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XP10NA011J YAGEO XSEMI
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Description: MOSFET N-CH 100V 48.5A TO251S
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.96 EUR |
80+ | 3.38 EUR |
560+ | 3 EUR |
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Technische Details XP10NA011J YAGEO XSEMI
Description: MOSFET N-CH 100V 48.5A TO251S, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48.5A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V, Power Dissipation (Max): 1.13W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251S, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 80 V.
Weitere Produktangebote XP10NA011J nach Preis ab 2.6 EUR bis 5.03 EUR
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XP10NA011J | Hersteller : XSemi |
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auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10NA011J | Hersteller : YAGEO XSemi |
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auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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