| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| VO2630-X009T | VISHAY |
 Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: SMD8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2630 |
Produkt ist nicht verfügbar |
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MAL213630221E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 220µF Operating voltage: 35V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 6000h Operating temperature: -55...105°C |
auf Bestellung 791 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD1020 | VISHAY |
Category: Photodiodes Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black Type of photoelement: PIN photodiode LED diameter: 1.9mm Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 870...950nm Viewing angle: 30° Active area: 0.23mm2 Front: convex LED lens: black Dimensions: 2.5x2x2.7mm Operating temperature: -40...85°C |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD5110X01 | VISHAY |
Category: Photodiodes Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black Type of photoelement: PIN photodiode Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 870...950nm Viewing angle: 65° Active area: 7.5mm2 Front: flat LED lens: black Dimensions: 5x4.24x1.12mm |
auf Bestellung 3966 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMD5510FX01 | VISHAY |
Category: IR receiver modules Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2 Dimensions: 5x4.24x1.12mm Mounting: SMD Front: flat Viewing angle: 65° Type of photoelement: PIN photodiode Wavelength of peak sensitivity: 540nm Active area: 7.5mm2 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TEMD6200FX01 | VISHAY |
Category: PCB Photoelectric Sensors Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C Mounting: PCB Wavelength: 540nm Body dimensions: 2x1.25x0.85mm Operating temperature: -40...100°C Type of sensor: photoelectric Response time: <150ns |
Produkt ist nicht verfügbar |
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TEMD7100X01 | VISHAY |
Category: Photodiodes Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black Type of photoelement: PIN photodiode Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 750...1050nm Viewing angle: 120° Active area: 0.23mm2 Front: flat LED lens: black Dimensions: 2x1.25x0.85mm |
auf Bestellung 2370 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFPG40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7370DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.8A Pulsed drain current: 50A Power dissipation: 5.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MRS25000C3602FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 36kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 4670 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1499DH-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Power dissipation: 2.78W Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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SI1499DH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Power dissipation: 2.78W Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| K473K15X7RF5TL2 | VISHAY |
Category: MLCC THT capacitors Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm Type of capacitor: ceramic Capacitance: 47nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: THT Terminal pitch: 2.5mm Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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CRCW0603470RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 89500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0603470RJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 12305 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0603470RJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 470Ω Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 6200 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0201470RFNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 470Ω Power: 50mW Tolerance: ±1% Max. operating voltage: 30V Operating temperature: -55...155°C |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU220PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.8A Pulsed drain current: 19A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) |
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| VS-70HF30 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 300V Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
Produkt ist nicht verfügbar |
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| IRF9Z10PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14SPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z14STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Mounting: SMD Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -27A Case: D2PAK; TO263 Drain-source voltage: -60V Drain current: -6.7A On-state resistance: 0.5Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| IRF9Z20PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.7A Pulsed drain current: -39A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF9Z30PBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -18A Pulsed drain current: -60A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9010TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9014TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR9014TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.2A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9014TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9110TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -3.1A |
Produkt ist nicht verfügbar |
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| IRFR9214TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9214TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Drain current: -2.7A Pulsed drain current: -11A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DG9424EDQ-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: analog switch Resistance: 3Ω Output configuration: SPST-NO Number of channels: 4 Supply voltage: 3...8V; 3...16V |
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SI1424EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70 Drain-source voltage: 20V Drain current: 4A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SC70 |
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SI1427EDH-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.8W Case: SC70 Gate-source voltage: ±8V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SI1428EDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
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| SIB422EDK-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 9A Pulsed drain current: 25A Power dissipation: 13W Gate-source voltage: ±8V On-state resistance: 82mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| SQ1421EDH-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1A Power dissipation: 0.5W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
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1.5SMC200A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC Mounting: SMD Kind of package: reel; tape Manufacturer series: 1.5SMC Breakdown voltage: 190...210V Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 171V Semiconductor structure: unidirectional |
auf Bestellung 1413 Stücke: Lieferzeit 14-21 Tag (e) |
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VR37000002004JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 2MΩ Power: 0.5W Tolerance: ±5% Max. operating voltage: 3.5kV DC Body dimensions: Ø4x10mm Temperature coefficient: 200ppm/°C Leads: axial |
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VS-30CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Case: TO220AB Kind of package: tube Max. forward impulse current: 260A |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-30CTQ060S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Capacitance: 500pF Max. forward voltage: 0.82V Case: D2PAK Kind of package: tube Leakage current: 7mA Max. forward impulse current: 1kA |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12062K00FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 2kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 8800 Stücke: Lieferzeit 14-21 Tag (e) |
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LCS964MCS04020DB00 | VISHAY |
Category: SMD resistors Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs. Tolerance: ±0.1% Mounting: SMD Case - inch: 0402 Type of kit: resistors Number of values: 90 Range of values: 47Ω...221kΩ Quantity in set/package: 3600pcs. Case - mm: 1005 |
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VJ0603Y103MXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 50V Dielectric: X7R Tolerance: ±20% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
auf Bestellung 3500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW06033M90FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C Operating temperature: -55...155°C Mounting: SMD Case - mm: 1608 Case - inch: 0603 Type of resistor: thick film Power: 0.1W Resistance: 3.9MΩ Tolerance: ±1% Max. operating voltage: 75V |
auf Bestellung 7100 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL215957471E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C Type of capacitor: electrolytic Capacitance: 470µF Operating voltage: 450V DC Tolerance: ±20% Operating temperature: -40...105°C Body dimensions: Ø35x50mm |
Produkt ist nicht verfügbar |
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| SI1965DH-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
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| SI1965DH-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |
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SMBJ78A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 91.25V Max. forward impulse current: 4.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 2780 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ78D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 78V Breakdown voltage: 88.1V Max. forward impulse current: 4.86A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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MRS25000C2103FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 210kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1040X-T1-GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.43A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC89-6 On-state resistance: 0.5Ω Kind of package: reel; tape Supply voltage: 1.8...8V DC |
Produkt ist nicht verfügbar |
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S1FLM-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO219AB; SMF Max. forward voltage: 1.1V Max. forward impulse current: 22A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 29716 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4284EY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Power dissipation: 3.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBB02070C1503FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 150kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 3440 Stücke: Lieferzeit 14-21 Tag (e) |
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T73XX104KT20 | VISHAY |
Category: Single turn THT trimmers Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10% Type of potentiometer: mounting Kind of potentiometer: single turn; vertical Resistance: 100kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T73RXXX Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 1/4" Temperature coefficient: 100ppm/°C Terminal pitch: 2.54x2.54mm Max. operating voltage: 250V IP rating: IP67 Torque: 2Ncm Electrical rotation angle: 250 ±15° Mechanical rotation angle: 290 ±5° Potentiometer features: clear scale reading |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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| VO2630-X009T |
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Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: SMD8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2630
Produkt ist nicht verfügbar
| MAL213630221E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 6000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 35VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 6000h
Operating temperature: -55...105°C
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.53 EUR |
| 66+ | 1.09 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| TEMD1020 |
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Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black
Type of photoelement: PIN photodiode
LED diameter: 1.9mm
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 30°
Active area: 0.23mm2
Front: convex
LED lens: black
Dimensions: 2.5x2x2.7mm
Operating temperature: -40...85°C
Category: Photodiodes
Description: PIN photodiode; 1.9mm; Gull wing; SMD; 940nm; 870÷950nm; 30°; black
Type of photoelement: PIN photodiode
LED diameter: 1.9mm
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 30°
Active area: 0.23mm2
Front: convex
LED lens: black
Dimensions: 2.5x2x2.7mm
Operating temperature: -40...85°C
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 106+ | 0.68 EUR |
| 118+ | 0.61 EUR |
| 176+ | 0.41 EUR |
| 218+ | 0.33 EUR |
| 232+ | 0.31 EUR |
| TEMD5110X01 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 65°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 5x4.24x1.12mm
Category: Photodiodes
Description: PIN photodiode; SMD; 940nm; 870÷950nm; 65°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 870...950nm
Viewing angle: 65°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 5x4.24x1.12mm
auf Bestellung 3966 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 87+ | 0.83 EUR |
| 90+ | 0.8 EUR |
| TEMD5510FX01 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2
Dimensions: 5x4.24x1.12mm
Mounting: SMD
Front: flat
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 540nm
Active area: 7.5mm2
Category: IR receiver modules
Description: PIN photodiode; 65°; Dim: 5x4.24x1.12mm; λp max: 540nm; 7.5mm2
Dimensions: 5x4.24x1.12mm
Mounting: SMD
Front: flat
Viewing angle: 65°
Type of photoelement: PIN photodiode
Wavelength of peak sensitivity: 540nm
Active area: 7.5mm2
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.52 EUR |
| 40+ | 1.79 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 500+ | 1.27 EUR |
| TEMD6200FX01 |
|
Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C
Mounting: PCB
Wavelength: 540nm
Body dimensions: 2x1.25x0.85mm
Operating temperature: -40...100°C
Type of sensor: photoelectric
Response time: <150ns
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; PCB; Body dim: 2x1.25x0.85mm; -40÷100°C
Mounting: PCB
Wavelength: 540nm
Body dimensions: 2x1.25x0.85mm
Operating temperature: -40...100°C
Type of sensor: photoelectric
Response time: <150ns
Produkt ist nicht verfügbar
| TEMD7100X01 |
|
Hersteller: VISHAY
Category: Photodiodes
Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 750...1050nm
Viewing angle: 120°
Active area: 0.23mm2
Front: flat
LED lens: black
Dimensions: 2x1.25x0.85mm
Category: Photodiodes
Description: PIN photodiode; SMD; 950nm; 750÷1050nm; 120°; flat; black
Type of photoelement: PIN photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 750...1050nm
Viewing angle: 120°
Active area: 0.23mm2
Front: flat
LED lens: black
Dimensions: 2x1.25x0.85mm
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 88+ | 0.82 EUR |
| 204+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| IRFPG40PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| 23+ | 3.2 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
| SI7370DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15.8A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.8A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MRS25000C3602FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 4670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 1230+ | 0.058 EUR |
| 1990+ | 0.036 EUR |
| SI1499DH-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Power dissipation: 2.78W
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Power dissipation: 2.78W
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SI1499DH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Power dissipation: 2.78W
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A
Mounting: SMD
Case: SC70-6; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -6.5A
Power dissipation: 2.78W
Drain-source voltage: -8V
Drain current: -1.6A
On-state resistance: 424mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| K473K15X7RF5TL2 |
|
Hersteller: VISHAY
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Category: MLCC THT capacitors
Description: Capacitor: ceramic; 47nF; 50V; X7R; ±10%; THT; 2.5mm
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: THT
Terminal pitch: 2.5mm
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| CRCW0603470RFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 89500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3300+ | 0.022 EUR |
| 15900+ | 0.0045 EUR |
| 31100+ | 0.0023 EUR |
| 35800+ | 0.002 EUR |
| 37900+ | 0.0019 EUR |
| CRCW0603470RJNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 12305 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 585+ | 0.12 EUR |
| 2778+ | 0.026 EUR |
| 4099+ | 0.017 EUR |
| 4855+ | 0.015 EUR |
| 7083+ | 0.01 EUR |
| 8224+ | 0.0087 EUR |
| 9961+ | 0.0072 EUR |
| 12305+ | 0.0059 EUR |
| CRCW0603470RJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 470Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 470Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 6200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3500+ | 0.02 EUR |
| 6200+ | 0.012 EUR |
| CRCW0201470RFNTDBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 470Ω
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 470Ω; 50mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 470Ω
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)| IRFU220PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 19A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 124+ | 0.58 EUR |
| 140+ | 0.51 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| VS-70HF30 |
|
Hersteller: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 300V; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Produkt ist nicht verfügbar
| IRF9Z10PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14SPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.7A
Pulsed drain current: -27A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z14STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W
Mounting: SMD
Power dissipation: 43W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -27A
Case: D2PAK; TO263
Drain-source voltage: -60V
Drain current: -6.7A
On-state resistance: 0.5Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| IRF9Z20PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.7A; Idm: -39A; 40W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.7A
Pulsed drain current: -39A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF9Z30PBF | |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -18A; Idm: -60A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -18A
Pulsed drain current: -60A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010PBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9010TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -5.3A; Idm: -21A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.2A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.2A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9014TRPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.1A; Idm: -20A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9110TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -3.1A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -3.1A
Produkt ist nicht verfügbar
| IRFR9214TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9214TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -2.7A; Idm: -11A; 50W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -2.7A
Pulsed drain current: -11A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DG9424EDQ-T1-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 3÷8V,3÷16V; reel,tape
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: analog switch
Resistance: 3Ω
Output configuration: SPST-NO
Number of channels: 4
Supply voltage: 3...8V; 3...16V
Produkt ist nicht verfügbar
| SI1424EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.8W; SC70
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70
Produkt ist nicht verfügbar
| SI1427EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1.8W; SC70
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.8W
Case: SC70
Gate-source voltage: ±8V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SI1428EDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70
Mounting: SMD
Drain current: 4A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SC70
Drain-source voltage: 30V
Produkt ist nicht verfügbar
| SIB422EDK-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 25A
Power dissipation: 13W
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 9A; Idm: 25A; 13W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9A
Pulsed drain current: 25A
Power dissipation: 13W
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SQ1421EDH-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1A; 0.5W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1A
Power dissipation: 0.5W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| SIA4265EDJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5SMC200A-E3/57T |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Breakdown voltage: 190...210V
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
Semiconductor structure: unidirectional
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 190÷210V; unidirectional; SMC; reel,tape; 1.5SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Breakdown voltage: 190...210V
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
Semiconductor structure: unidirectional
auf Bestellung 1413 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 188+ | 0.38 EUR |
| VR37000002004JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal glaze; THT; 2MΩ; 0.5W; ±5%; Ø4x10mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 2MΩ
Power: 0.5W
Tolerance: ±5%
Max. operating voltage: 3.5kV DC
Body dimensions: Ø4x10mm
Temperature coefficient: 200ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| VS-30CTQ060-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 260A
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.9 EUR |
| 41+ | 1.74 EUR |
| 47+ | 1.53 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
| VS-30CTQ060S-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Capacitance: 500pF
Max. forward voltage: 0.82V
Case: D2PAK
Kind of package: tube
Leakage current: 7mA
Max. forward impulse current: 1kA
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.76 EUR |
| 46+ | 1.59 EUR |
| 51+ | 1.42 EUR |
| 59+ | 1.23 EUR |
| 62+ | 1.16 EUR |
| CRCW12062K00FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 2kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 2kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 8800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| 3000+ | 0.025 EUR |
| 4600+ | 0.016 EUR |
| 8800+ | 0.0082 EUR |
| LCS964MCS04020DB00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0402
Type of kit: resistors
Number of values: 90
Range of values: 47Ω...221kΩ
Quantity in set/package: 3600pcs.
Case - mm: 1005
Category: SMD resistors
Description: Kit: resistors; SMD; 0402; ±0.1%; 47Ω÷221kΩ; No.of val: 90; 3600pcs.
Tolerance: ±0.1%
Mounting: SMD
Case - inch: 0402
Type of kit: resistors
Number of values: 90
Range of values: 47Ω...221kΩ
Quantity in set/package: 3600pcs.
Case - mm: 1005
Produkt ist nicht verfügbar
| VJ0603Y103MXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 50V; X7R; ±20%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3500+ | 0.02 EUR |
| CRCW06033M90FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Type of resistor: thick film
Power: 0.1W
Resistance: 3.9MΩ
Tolerance: ±1%
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.9MΩ; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Type of resistor: thick film
Power: 0.1W
Resistance: 3.9MΩ
Tolerance: ±1%
Max. operating voltage: 75V
auf Bestellung 7100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2300+ | 0.032 EUR |
| 4400+ | 0.017 EUR |
| 7100+ | 0.01 EUR |
| MAL215957471E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Body dimensions: Ø35x50mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; 470uF; 450VDC; Ø35x50mm; ±20%; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 470µF
Operating voltage: 450V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Body dimensions: Ø35x50mm
Produkt ist nicht verfügbar
| SI1965DH-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
| SI1965DH-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Polarisation: unipolar
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -3A
Mounting: SMD
Case: SC70-6; SOT363
Drain-source voltage: -12V
Drain current: -1.3A
On-state resistance: 710mΩ
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
| SMBJ78A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 91.25V; 4.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 91.25V
Max. forward impulse current: 4.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.23 EUR |
| 520+ | 0.14 EUR |
| 585+ | 0.12 EUR |
| 675+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| SMBJ78D-M3/H |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 88.1V; 4.86A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 88.1V
Max. forward impulse current: 4.86A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
| MRS25000C2103FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 210kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 210kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 520+ | 0.14 EUR |
| 1270+ | 0.057 EUR |
| 2040+ | 0.035 EUR |
| SI1040X-T1-GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.43A; Ch: 1; P-Channel; SMD; SC89-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.43A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC89-6
On-state resistance: 0.5Ω
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Produkt ist nicht verfügbar
| S1FLM-GS08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO219AB; SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 1.8us; DO219AB,SMF; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO219AB; SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 22A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 29716 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 209+ | 0.34 EUR |
| 293+ | 0.24 EUR |
| 489+ | 0.15 EUR |
| 620+ | 0.12 EUR |
| 762+ | 0.094 EUR |
| 1695+ | 0.042 EUR |
| 1793+ | 0.04 EUR |
| SQ4284EY-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.4A; 3.9W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Power dissipation: 3.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBB02070C1503FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 150kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 150kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 150kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 3440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 1800+ | 0.04 EUR |
| 2470+ | 0.029 EUR |
| 2610+ | 0.027 EUR |
| T73XX104KT20 |
|
Hersteller: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
Category: Single turn THT trimmers
Description: Potentiometer: mounting; single turn,vertical; 100kΩ; 500mW; ±10%
Type of potentiometer: mounting
Kind of potentiometer: single turn; vertical
Resistance: 100kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T73RXXX
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 1/4"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.54x2.54mm
Max. operating voltage: 250V
IP rating: IP67
Torque: 2Ncm
Electrical rotation angle: 250 ±15°
Mechanical rotation angle: 290 ±5°
Potentiometer features: clear scale reading
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 62+ | 1.16 EUR |
| 102+ | 0.7 EUR |
| 108+ | 0.66 EUR |