SI1965DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details SI1965DH-T1-GE3 Vishay Siliconix
Description: VISHAY - SI1965DH-T1-GE3 - Dual-MOSFET, p-Kanal, 12 V, 12 V, 1.3 A, 1.3 A, 0.315 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 1.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 12V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 1.3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.315ohm, Verlustleistung, p-Kanal: 1.25W, Drain-Source-Spannung Vds, n-Kanal: 12V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: Trench Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.315ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 1.25W, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Weitere Produktangebote SI1965DH-T1-GE3 nach Preis ab 0.24 EUR bis 0.8 EUR
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SI1965DH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 4895 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1965DH-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -12V Vds 8V Vgs SC70-6 |
auf Bestellung 3684 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1965DH-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI1965DH-T1-GE3 - Dual-MOSFET, p-Kanal, 12 V, 12 V, 1.3 A, 1.3 A, 0.315 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 12V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.315ohm Verlustleistung, p-Kanal: 1.25W Drain-Source-Spannung Vds, n-Kanal: 12V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: Trench Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.315ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.25W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1965DH-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI1965DH-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 4.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -3A Mounting: SMD Case: SC70-6; SOT363 Drain-source voltage: -12V Drain current: -1.3A On-state resistance: 710mΩ Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |