Produkte > VISHAY > Alle Produkte des Herstellers VISHAY (319354) > Seite 5117 nach 5323

Wählen Sie Seite:    << Vorherige Seite ]  1 532 1064 1596 2128 2660 3192 3724 4256 4788 5112 5113 5114 5115 5116 5117 5118 5119 5120 5121 5122 5320 5323  Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
ES2B-E3/5BT VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/52T VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/5BT VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2BHE3_A/I VISHAY es2.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
VDRS10P275BSE VDRS10P275BSE VISHAY vdrs.pdf Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA
Mounting: THT
Max body dimensions: Ø12mm
Terminal pitch: 8mm
Leads dimensions: Ø0.8x17mm
Max. operating voltage: 275V AC; 350V DC
Type of varistor: metal-oxide
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
131+ 0.55 EUR
338+ 0.21 EUR
357+ 0.2 EUR
Mindestbestellmenge: 87
DF04S-E3/45 DF04S-E3/45 VISHAY dfs.pdf description Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 3375 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
108+ 0.66 EUR
124+ 0.58 EUR
298+ 0.24 EUR
315+ 0.23 EUR
Mindestbestellmenge: 105
DF04S-E3/77 DF04S-E3/77 VISHAY DF02S-E3-45.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
140+ 0.51 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 122
SIA929DJ-T1-GE3 VISHAY sia929dj.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DF08M-E3/45 DF08M-E3/45 VISHAY DF02-E3-45.pdf description Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
171+ 0.42 EUR
223+ 0.32 EUR
298+ 0.24 EUR
315+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 125
DF08S-E3/45 DF08S-E3/45 VISHAY DF02S-E3-45.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 3930 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
244+ 0.29 EUR
295+ 0.24 EUR
312+ 0.23 EUR
1500+ 0.22 EUR
Mindestbestellmenge: 186
DF08S-E3/77 DF08S-E3/77 VISHAY DF02S-E3-45.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
295+ 0.24 EUR
311+ 0.23 EUR
Mindestbestellmenge: 103
TSOP32436 VISHAY TSOP32240.pdf Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP6240TT TSOP6240TT VISHAY TSOP6240TT.pdf Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
71+ 1.01 EUR
86+ 0.83 EUR
91+ 0.79 EUR
100+ 0.76 EUR
Mindestbestellmenge: 59
TSOP32240 VISHAY TSOP32240.pdf Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 40kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP38240 TSOP38240 VISHAY TSOP38240.pdf Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
TSOP94240 VISHAY tsop942.pdf Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
TSOP98240 VISHAY tsop982.pdf Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
CRCW040230K0FKTDBC CRCW040230K0FKTDBC VISHAY crcw0402_dbc.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 62.5mW
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Type of resistor: thick film
auf Bestellung 26500 Stücke:
Lieferzeit 14-21 Tag (e)
4200+0.017 EUR
9400+ 0.0076 EUR
20500+ 0.0035 EUR
21700+ 0.0033 EUR
Mindestbestellmenge: 4200
CRCW120630K0JNTABC CRCW120630K0JNTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30kΩ; 0.25W; ±5%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±5%
Power: 0.25W
Case - mm: 3216
Case - inch: 1206
Max. operating voltage: 200V
Type of resistor: thick film
auf Bestellung 4498 Stücke:
Lieferzeit 14-21 Tag (e)
1900+0.038 EUR
3300+ 0.022 EUR
Mindestbestellmenge: 1900
CRCW251230K0FKEG CRCW251230K0FKEG VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Produkt ist nicht verfügbar
CRCW251230K0FKTHBC CRCW251230K0FKTHBC VISHAY CRCW.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 1W
Case - mm: 6332
Case - inch: 2512
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Type of resistor: thick film
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
470+0.15 EUR
790+ 0.091 EUR
1460+ 0.049 EUR
1540+ 0.046 EUR
Mindestbestellmenge: 470
M24S4FF1000T30 M24S4FF1000T30 VISHAY VISHAY_MMU-A-B.pdf Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Power: 0.4W
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Resistance: 100Ω
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
auf Bestellung 13750 Stücke:
Lieferzeit 14-21 Tag (e)
775+0.093 EUR
1375+ 0.053 EUR
2550+ 0.028 EUR
3525+ 0.02 EUR
3750+ 0.019 EUR
Mindestbestellmenge: 775
GBPC2510W-E4/51 VISHAY gbpc12.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
GBPC2510-E4/51 GBPC2510-E4/51 VISHAY GBPC3506-E4-51.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.22 EUR
19+ 3.8 EUR
25+ 2.9 EUR
27+ 2.75 EUR
Mindestbestellmenge: 17
IRLU014PBF IRLU014PBF VISHAY IRLU014.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
115+ 0.63 EUR
127+ 0.56 EUR
166+ 0.43 EUR
175+ 0.41 EUR
Mindestbestellmenge: 60
IRLU024PBF IRLU024PBF VISHAY IRLU024.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
114+ 0.63 EUR
129+ 0.56 EUR
136+ 0.53 EUR
143+ 0.5 EUR
300+ 0.48 EUR
Mindestbestellmenge: 64
IRLU110PBF IRLU110PBF VISHAY IRLR110.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
120+ 0.6 EUR
133+ 0.54 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 59
SA5.0A-E3/54 SA5.0A-E3/54 VISHAY sa5a_ser.pdf Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
225+0.32 EUR
281+ 0.25 EUR
361+ 0.2 EUR
382+ 0.19 EUR
Mindestbestellmenge: 225
SA5.0A-E3/73 SA5.0A-E3/73 VISHAY sa5a_ser.pdf Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
BZX55C7V5-TAP BZX55C7V5-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 6810 Stücke:
Lieferzeit 14-21 Tag (e)
1130+0.064 EUR
2220+ 0.032 EUR
2780+ 0.026 EUR
2950+ 0.024 EUR
3110+ 0.023 EUR
Mindestbestellmenge: 1130
593D227X9010D2TE3 593D227X9010D2TE3 VISHAY 593d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
65+ 1.12 EUR
127+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 46
P6SMB33CA-E3/52 P6SMB33CA-E3/52 VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
274+ 0.26 EUR
360+ 0.2 EUR
530+ 0.14 EUR
560+ 0.13 EUR
Mindestbestellmenge: 186
P6SMB33CA-E3/5B P6SMB33CA-E3/5B VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/52 P6SMB33CA-M3/52 VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/5B P6SMB33CA-M3/5B VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/52 P6SMB30CA-E3/52 VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/5B P6SMB30CA-E3/5B VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/52 P6SMB30CA-M3/52 VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/5B P6SMB30CA-M3/5B VISHAY p6smb.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
SMBJ30A-E3/52 SMBJ30A-E3/52 VISHAY smbjA-CA_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 5209 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
258+ 0.28 EUR
313+ 0.23 EUR
371+ 0.19 EUR
675+ 0.11 EUR
715+ 0.1 EUR
1500+ 0.097 EUR
Mindestbestellmenge: 200
SMBJ30CD-M3/H SMBJ30CD-M3/H VISHAY SMBJxxxD.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
SMBJ30D-M3/H SMBJ30D-M3/H VISHAY SMBJxxxD.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 3616 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
233+ 0.31 EUR
304+ 0.24 EUR
491+ 0.15 EUR
746+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 179
P6SMB33A-E3/52 P6SMB33A-E3/52 VISHAY p6smb.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-E3/5B P6SMB33A-E3/5B VISHAY p6smb.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/52 P6SMB33A-M3/52 VISHAY p6smb.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/5B P6SMB33A-M3/5B VISHAY p6smb.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
BZG03C10-M3-08 BZG03C10-M3-08 VISHAY bzg03c-m-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; 50mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 7620 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
355+ 0.2 EUR
400+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 320
BZG03C100-M3-08 BZG03C100-M3-08 VISHAY bzg03c-m-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 5mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 5365 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
355+ 0.2 EUR
425+ 0.17 EUR
435+ 0.16 EUR
1500+ 0.15 EUR
Mindestbestellmenge: 315
ES2F-E3/52T ES2F-E3/52T VISHAY es2f_g.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Reverse recovery time: 35ns
Load current: 2A
auf Bestellung 4590 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
527+ 0.14 EUR
589+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 358
ES2FHE3_A/H VISHAY es2f.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 50ns; DO214AA,SMB; Ufmax: 1.1V
Mounting: SMD
Case: DO214AA; SMB
Capacitance: 15pF
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Max. forward voltage: 1.1V
Max. off-state voltage: 300V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Load current: 2A
Produkt ist nicht verfügbar
SIHA15N60E-E3 SIHA15N60E-E3 VISHAY siha15n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+ 3.09 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 21
SIHB15N60E-GE3 VISHAY sihb15n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF15N60E-GE3 VISHAY sihf15n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHG15N60E-GE3 SIHG15N60E-GE3 VISHAY sihg15n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.72 EUR
17+ 4.23 EUR
22+ 3.26 EUR
24+ 3.09 EUR
Mindestbestellmenge: 16
SIHP15N60E-GE3 VISHAY sihp15n60e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
293D475X9035B2TE3 293D475X9035B2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: B
Case - mm: 3528
Case - inch: 1411
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
117+ 0.61 EUR
137+ 0.52 EUR
194+ 0.37 EUR
336+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 87
293D475X9035C2TE3 293D475X9035C2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: C
Case - mm: 6032
Case - inch: 2312
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
124+ 0.58 EUR
148+ 0.48 EUR
220+ 0.33 EUR
323+ 0.22 EUR
343+ 0.21 EUR
Mindestbestellmenge: 91
293D475X9035D2TE3 293D475X9035D2TE3 VISHAY 293d.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: D
Case - mm: 7343
Case - inch: 2917
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
162+ 0.44 EUR
196+ 0.37 EUR
255+ 0.28 EUR
269+ 0.27 EUR
500+ 0.26 EUR
Mindestbestellmenge: 107
TR3B475K035C0700 VISHAY tr3.pdf Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1311; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: B
Case - inch: 1311
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 700mΩ
Produkt ist nicht verfügbar
VJ0805A221KXPTW1BC VJ0805A221KXPTW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 250V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 250V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
ES2B-E3/5BT es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/52T es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/5BT es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2BHE3_A/I es2.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
VDRS10P275BSE vdrs.pdf
VDRS10P275BSE
Hersteller: VISHAY
Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA
Mounting: THT
Max body dimensions: Ø12mm
Terminal pitch: 8mm
Leads dimensions: Ø0.8x17mm
Max. operating voltage: 275V AC; 350V DC
Type of varistor: metal-oxide
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
87+0.83 EUR
131+ 0.55 EUR
338+ 0.21 EUR
357+ 0.2 EUR
Mindestbestellmenge: 87
DF04S-E3/45 description dfs.pdf
DF04S-E3/45
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 3375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
108+ 0.66 EUR
124+ 0.58 EUR
298+ 0.24 EUR
315+ 0.23 EUR
Mindestbestellmenge: 105
DF04S-E3/77 DF02S-E3-45.pdf
DF04S-E3/77
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
122+0.59 EUR
140+ 0.51 EUR
261+ 0.27 EUR
276+ 0.26 EUR
Mindestbestellmenge: 122
SIA929DJ-T1-GE3 sia929dj.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DF08M-E3/45 description DF02-E3-45.pdf
DF08M-E3/45
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
171+ 0.42 EUR
223+ 0.32 EUR
298+ 0.24 EUR
315+ 0.23 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 125
DF08S-E3/45 DF02S-E3-45.pdf
DF08S-E3/45
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 3930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
244+ 0.29 EUR
295+ 0.24 EUR
312+ 0.23 EUR
1500+ 0.22 EUR
Mindestbestellmenge: 186
DF08S-E3/77 DF02S-E3-45.pdf
DF08S-E3/77
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
103+0.7 EUR
295+ 0.24 EUR
311+ 0.23 EUR
Mindestbestellmenge: 103
TSOP32436 TSOP32240.pdf
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP6240TT TSOP6240TT.pdf
TSOP6240TT
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
71+ 1.01 EUR
86+ 0.83 EUR
91+ 0.79 EUR
100+ 0.76 EUR
Mindestbestellmenge: 59
TSOP32240 TSOP32240.pdf
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 40kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP38240 TSOP38240.pdf
TSOP38240
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
TSOP94240 tsop942.pdf
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
TSOP98240 tsop982.pdf
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
CRCW040230K0FKTDBC crcw0402_dbc.pdf
CRCW040230K0FKTDBC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 62.5mW
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Type of resistor: thick film
auf Bestellung 26500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4200+0.017 EUR
9400+ 0.0076 EUR
20500+ 0.0035 EUR
21700+ 0.0033 EUR
Mindestbestellmenge: 4200
CRCW120630K0JNTABC Data Sheet CRCW_BCe3.pdf
CRCW120630K0JNTABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30kΩ; 0.25W; ±5%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±5%
Power: 0.25W
Case - mm: 3216
Case - inch: 1206
Max. operating voltage: 200V
Type of resistor: thick film
auf Bestellung 4498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1900+0.038 EUR
3300+ 0.022 EUR
Mindestbestellmenge: 1900
CRCW251230K0FKEG CRCW.pdf
CRCW251230K0FKEG
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Produkt ist nicht verfügbar
CRCW251230K0FKTHBC CRCW.pdf
CRCW251230K0FKTHBC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 1W
Case - mm: 6332
Case - inch: 2512
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Type of resistor: thick film
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
470+0.15 EUR
790+ 0.091 EUR
1460+ 0.049 EUR
1540+ 0.046 EUR
Mindestbestellmenge: 470
M24S4FF1000T30 VISHAY_MMU-A-B.pdf
M24S4FF1000T30
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Power: 0.4W
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Resistance: 100Ω
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
auf Bestellung 13750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
775+0.093 EUR
1375+ 0.053 EUR
2550+ 0.028 EUR
3525+ 0.02 EUR
3750+ 0.019 EUR
Mindestbestellmenge: 775
GBPC2510W-E4/51 gbpc12.pdf
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
GBPC2510-E4/51 GBPC3506-E4-51.pdf
GBPC2510-E4/51
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
17+4.22 EUR
19+ 3.8 EUR
25+ 2.9 EUR
27+ 2.75 EUR
Mindestbestellmenge: 17
IRLU014PBF IRLU014.pdf
IRLU014PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
60+1.2 EUR
115+ 0.63 EUR
127+ 0.56 EUR
166+ 0.43 EUR
175+ 0.41 EUR
Mindestbestellmenge: 60
IRLU024PBF description IRLU024.pdf
IRLU024PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
114+ 0.63 EUR
129+ 0.56 EUR
136+ 0.53 EUR
143+ 0.5 EUR
300+ 0.48 EUR
Mindestbestellmenge: 64
IRLU110PBF IRLR110.pdf
IRLU110PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
120+ 0.6 EUR
133+ 0.54 EUR
175+ 0.41 EUR
185+ 0.39 EUR
Mindestbestellmenge: 59
SA5.0A-E3/54 sa5a_ser.pdf
SA5.0A-E3/54
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
225+0.32 EUR
281+ 0.25 EUR
361+ 0.2 EUR
382+ 0.19 EUR
Mindestbestellmenge: 225
SA5.0A-E3/73 sa5a_ser.pdf
SA5.0A-E3/73
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
BZX55C7V5-TAP BZX55C10-TAP.pdf
BZX55C7V5-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 6810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1130+0.064 EUR
2220+ 0.032 EUR
2780+ 0.026 EUR
2950+ 0.024 EUR
3110+ 0.023 EUR
Mindestbestellmenge: 1130
593D227X9010D2TE3 593d.pdf
593D227X9010D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
46+1.59 EUR
65+ 1.12 EUR
127+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 46
P6SMB33CA-E3/52 p6smb.pdf
P6SMB33CA-E3/52
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
274+ 0.26 EUR
360+ 0.2 EUR
530+ 0.14 EUR
560+ 0.13 EUR
Mindestbestellmenge: 186
P6SMB33CA-E3/5B p6smb.pdf
P6SMB33CA-E3/5B
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/52 p6smb.pdf
P6SMB33CA-M3/52
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/5B p6smb.pdf
P6SMB33CA-M3/5B
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/52 p6smb.pdf
P6SMB30CA-E3/52
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/5B p6smb.pdf
P6SMB30CA-E3/5B
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/52 p6smb.pdf
P6SMB30CA-M3/52
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/5B p6smb.pdf
P6SMB30CA-M3/5B
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
SMBJ30A-E3/52 smbjA-CA_ser.pdf
SMBJ30A-E3/52
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 5209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
258+ 0.28 EUR
313+ 0.23 EUR
371+ 0.19 EUR
675+ 0.11 EUR
715+ 0.1 EUR
1500+ 0.097 EUR
Mindestbestellmenge: 200
SMBJ30CD-M3/H SMBJxxxD.pdf
SMBJ30CD-M3/H
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
SMBJ30D-M3/H SMBJxxxD.pdf
SMBJ30D-M3/H
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 3616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
233+ 0.31 EUR
304+ 0.24 EUR
491+ 0.15 EUR
746+ 0.096 EUR
789+ 0.091 EUR
Mindestbestellmenge: 179
P6SMB33A-E3/52 p6smb.pdf
P6SMB33A-E3/52
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-E3/5B p6smb.pdf
P6SMB33A-E3/5B
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/52 p6smb.pdf
P6SMB33A-M3/52
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/5B p6smb.pdf
P6SMB33A-M3/5B
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
BZG03C10-M3-08 bzg03c-m-ser.pdf
BZG03C10-M3-08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; 50mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 7620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
320+0.23 EUR
355+ 0.2 EUR
400+ 0.18 EUR
460+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 320
BZG03C100-M3-08 bzg03c-m-ser.pdf
BZG03C100-M3-08
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 5mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 5365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
355+ 0.2 EUR
425+ 0.17 EUR
435+ 0.16 EUR
1500+ 0.15 EUR
Mindestbestellmenge: 315
ES2F-E3/52T es2f_g.pdf
ES2F-E3/52T
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Reverse recovery time: 35ns
Load current: 2A
auf Bestellung 4590 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
358+0.2 EUR
527+ 0.14 EUR
589+ 0.12 EUR
685+ 0.1 EUR
725+ 0.099 EUR
Mindestbestellmenge: 358
ES2FHE3_A/H es2f.pdf
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 50ns; DO214AA,SMB; Ufmax: 1.1V
Mounting: SMD
Case: DO214AA; SMB
Capacitance: 15pF
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Max. forward voltage: 1.1V
Max. off-state voltage: 300V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Load current: 2A
Produkt ist nicht verfügbar
SIHA15N60E-E3 siha15n60e.pdf
SIHA15N60E-E3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.42 EUR
24+ 3.09 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 21
SIHB15N60E-GE3 sihb15n60e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF15N60E-GE3 sihf15n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHG15N60E-GE3 sihg15n60e.pdf
SIHG15N60E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.72 EUR
17+ 4.23 EUR
22+ 3.26 EUR
24+ 3.09 EUR
Mindestbestellmenge: 16
SIHP15N60E-GE3 sihp15n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
293D475X9035B2TE3 293d.pdf
293D475X9035B2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: B
Case - mm: 3528
Case - inch: 1411
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
87+0.83 EUR
117+ 0.61 EUR
137+ 0.52 EUR
194+ 0.37 EUR
336+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 87
293D475X9035C2TE3 293d.pdf
293D475X9035C2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: C
Case - mm: 6032
Case - inch: 2312
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
124+ 0.58 EUR
148+ 0.48 EUR
220+ 0.33 EUR
323+ 0.22 EUR
343+ 0.21 EUR
Mindestbestellmenge: 91
293D475X9035D2TE3 293d.pdf
293D475X9035D2TE3
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: D
Case - mm: 7343
Case - inch: 2917
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
162+ 0.44 EUR
196+ 0.37 EUR
255+ 0.28 EUR
269+ 0.27 EUR
500+ 0.26 EUR
Mindestbestellmenge: 107
TR3B475K035C0700 tr3.pdf
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1311; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: B
Case - inch: 1311
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 700mΩ
Produkt ist nicht verfügbar
VJ0805A221KXPTW1BC vjw1bcbascomseries.pdf
VJ0805A221KXPTW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 250V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 250V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Wählen Sie Seite:    << Vorherige Seite ]  1 532 1064 1596 2128 2660 3192 3724 4256 4788 5112 5113 5114 5115 5116 5117 5118 5119 5120 5121 5122 5320 5323  Nächste Seite >> ]