Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ES2B-E3/5BT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
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ES2B-M3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
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ES2B-M3/5BT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
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ES2BHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
Produkt ist nicht verfügbar |
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VDRS10P275BSE | VISHAY |
Category: THT varistors Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA Mounting: THT Max body dimensions: Ø12mm Terminal pitch: 8mm Leads dimensions: Ø0.8x17mm Max. operating voltage: 275V AC; 350V DC Type of varistor: metal-oxide Varistor voltage: 430V Varistor max current 8/20µs: 2.5kA |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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DF04S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.4kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFS Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: tube Electrical mounting: SMT Type of bridge rectifier: single-phase |
auf Bestellung 3375 Stücke: Lieferzeit 14-21 Tag (e) |
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DF04S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.4kV Load current: 1A Features of semiconductor devices: glass passivated Case: DFS Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Type of bridge rectifier: single-phase |
auf Bestellung 1744 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA929DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 5W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DF08M-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFM Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 3930 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP32436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Mounting: THT Supply voltage: 2.5...5.5V Frequency: 36kHz Viewing angle: 45° Type of photoelement: integrated IR receiver |
Produkt ist nicht verfügbar |
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TSOP6240TT | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP32240 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45° Mounting: THT Supply voltage: 2.5...5.5V Frequency: 40kHz Viewing angle: 45° Type of photoelement: integrated IR receiver |
Produkt ist nicht verfügbar |
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TSOP38240 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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TSOP94240 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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TSOP98240 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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CRCW040230K0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±1% Power: 62.5mW Case - mm: 1005 Case - inch: 0402 Temperature coefficient: 100ppm/°C Max. operating voltage: 50V Type of resistor: thick film |
auf Bestellung 26500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW120630K0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 30kΩ; 0.25W; ±5%; -55÷155°C Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±5% Power: 0.25W Case - mm: 3216 Case - inch: 1206 Max. operating voltage: 200V Type of resistor: thick film |
auf Bestellung 4498 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW251230K0FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C Mounting: SMD Operating temperature: -55...155°C Power: 1W Case - mm: 6332 Case - inch: 2512 Type of resistor: thick film Resistance: 30kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
Produkt ist nicht verfügbar |
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CRCW251230K0FKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±1% Power: 1W Case - mm: 6332 Case - inch: 2512 Temperature coefficient: 100ppm/°C Max. operating voltage: 500V Type of resistor: thick film |
auf Bestellung 3830 Stücke: Lieferzeit 14-21 Tag (e) |
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M24S4FF1000T30 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C Power: 0.4W Case: 0204 MiniMELF Mounting: SMD Operating temperature: -55...155°C Type of resistor: thin film Resistance: 100Ω Tolerance: ±1% Body dimensions: Ø1.5x3.6mm Temperature coefficient: 50ppm/°C Max. operating voltage: 200V |
auf Bestellung 13750 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC2510W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 300A Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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GBPC2510-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 300A Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU014PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 859 Stücke: Lieferzeit 14-21 Tag (e) |
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SA5.0A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 54.3A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.6mA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
auf Bestellung 2044 Stücke: Lieferzeit 14-21 Tag (e) |
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SA5.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 54.3A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.6mA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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BZX55C7V5-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 6810 Stücke: Lieferzeit 14-21 Tag (e) |
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593D227X9010D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 220µF Operating voltage: 10V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 125mΩ |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB33CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB33CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB30CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB30CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB30CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB30CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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SMBJ30A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 5209 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ30CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 33.8V; 12.6A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.8V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
Produkt ist nicht verfügbar |
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SMBJ30D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33.8V; 12.6A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.8V Max. forward impulse current: 12.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 3616 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB33A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB33A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB33A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB33A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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BZG03C10-M3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 10V; 50mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Zener current: 50mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C-M |
auf Bestellung 7620 Stücke: Lieferzeit 14-21 Tag (e) |
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BZG03C100-M3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 100V; 5mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C-M |
auf Bestellung 5365 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2F-E3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A Type of diode: rectifying Max. off-state voltage: 300V Max. forward impulse current: 50A Semiconductor structure: single diode Case: DO214AA; SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated; ultrafast switching Reverse recovery time: 35ns Load current: 2A |
auf Bestellung 4590 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2FHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 2A; 50ns; DO214AA,SMB; Ufmax: 1.1V Mounting: SMD Case: DO214AA; SMB Capacitance: 15pF Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.2mA Max. forward voltage: 1.1V Max. off-state voltage: 300V Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Load current: 2A |
Produkt ist nicht verfügbar |
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SIHA15N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHB15N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIHF15N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIHG15N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP15N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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293D475X9035B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount Mounting: SMD Case: B Case - mm: 3528 Case - inch: 1411 |
auf Bestellung 4725 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9035C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount Mounting: SMD Case: C Case - mm: 6032 Case - inch: 2312 |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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293D475X9035D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount Mounting: SMD Case: D Case - mm: 7343 Case - inch: 2917 |
auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) |
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TR3B475K035C0700 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1311; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Case: B Case - inch: 1311 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: TR3 ESR value: 700mΩ |
Produkt ist nicht verfügbar |
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VJ0805A221KXPTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 220pF; 250V; C0G (NP0); ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 220pF Operating voltage: 250V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
ES2B-E3/5BT |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/52T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2B-M3/5BT |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
ES2BHE3_A/I |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
Produkt ist nicht verfügbar
VDRS10P275BSE |
Hersteller: VISHAY
Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA
Mounting: THT
Max body dimensions: Ø12mm
Terminal pitch: 8mm
Leads dimensions: Ø0.8x17mm
Max. operating voltage: 275V AC; 350V DC
Type of varistor: metal-oxide
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
Category: THT varistors
Description: Varistor: metal-oxide; THT; 275VAC; 350VDC; 430V; 2.5kA
Mounting: THT
Max body dimensions: Ø12mm
Terminal pitch: 8mm
Leads dimensions: Ø0.8x17mm
Max. operating voltage: 275V AC; 350V DC
Type of varistor: metal-oxide
Varistor voltage: 430V
Varistor max current 8/20µs: 2.5kA
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
87+ | 0.83 EUR |
131+ | 0.55 EUR |
338+ | 0.21 EUR |
357+ | 0.2 EUR |
DF04S-E3/45 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 3375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 0.69 EUR |
108+ | 0.66 EUR |
124+ | 0.58 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
DF04S-E3/77 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Features of semiconductor devices: glass passivated
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Type of bridge rectifier: single-phase
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
122+ | 0.59 EUR |
140+ | 0.51 EUR |
261+ | 0.27 EUR |
276+ | 0.26 EUR |
SIA929DJ-T1-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -15A; 5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -15A
Power dissipation: 5W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DF08M-E3/45 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 0.57 EUR |
171+ | 0.42 EUR |
223+ | 0.32 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
1000+ | 0.22 EUR |
DF08S-E3/45 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 3930 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
244+ | 0.29 EUR |
295+ | 0.24 EUR |
312+ | 0.23 EUR |
1500+ | 0.22 EUR |
DF08S-E3/77 |
Hersteller: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
103+ | 0.7 EUR |
295+ | 0.24 EUR |
311+ | 0.23 EUR |
TSOP32436 |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP6240TT |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.22 EUR |
71+ | 1.01 EUR |
86+ | 0.83 EUR |
91+ | 0.79 EUR |
100+ | 0.76 EUR |
TSOP32240 |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 40kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Mounting: THT
Supply voltage: 2.5...5.5V
Frequency: 40kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Produkt ist nicht verfügbar
TSOP38240 |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
TSOP94240 |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
TSOP98240 |
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
CRCW040230K0FKTDBC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 62.5mW
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 62.5mW
Case - mm: 1005
Case - inch: 0402
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Type of resistor: thick film
auf Bestellung 26500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4200+ | 0.017 EUR |
9400+ | 0.0076 EUR |
20500+ | 0.0035 EUR |
21700+ | 0.0033 EUR |
CRCW120630K0JNTABC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30kΩ; 0.25W; ±5%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±5%
Power: 0.25W
Case - mm: 3216
Case - inch: 1206
Max. operating voltage: 200V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 30kΩ; 0.25W; ±5%; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±5%
Power: 0.25W
Case - mm: 3216
Case - inch: 1206
Max. operating voltage: 200V
Type of resistor: thick film
auf Bestellung 4498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1900+ | 0.038 EUR |
3300+ | 0.022 EUR |
CRCW251230K0FKEG |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Power: 1W
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Resistance: 30kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Produkt ist nicht verfügbar
CRCW251230K0FKTHBC |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 1W
Case - mm: 6332
Case - inch: 2512
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 30kΩ; 1W; ±1%; -55÷155°C; 100ppm/°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 1W
Case - mm: 6332
Case - inch: 2512
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Type of resistor: thick film
auf Bestellung 3830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
470+ | 0.15 EUR |
790+ | 0.091 EUR |
1460+ | 0.049 EUR |
1540+ | 0.046 EUR |
M24S4FF1000T30 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Power: 0.4W
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Resistance: 100Ω
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; -55÷155°C
Power: 0.4W
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thin film
Resistance: 100Ω
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
auf Bestellung 13750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
775+ | 0.093 EUR |
1375+ | 0.053 EUR |
2550+ | 0.028 EUR |
3525+ | 0.02 EUR |
3750+ | 0.019 EUR |
GBPC2510W-E4/51 |
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
GBPC2510-E4/51 |
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 300A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.22 EUR |
19+ | 3.8 EUR |
25+ | 2.9 EUR |
27+ | 2.75 EUR |
IRLU014PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
60+ | 1.2 EUR |
115+ | 0.63 EUR |
127+ | 0.56 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
IRLU024PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.2A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
114+ | 0.63 EUR |
129+ | 0.56 EUR |
136+ | 0.53 EUR |
143+ | 0.5 EUR |
300+ | 0.48 EUR |
IRLU110PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.23 EUR |
120+ | 0.6 EUR |
133+ | 0.54 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
SA5.0A-E3/54 |
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
225+ | 0.32 EUR |
281+ | 0.25 EUR |
361+ | 0.2 EUR |
382+ | 0.19 EUR |
SA5.0A-E3/73 |
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.4÷7.07V; 54.3A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 54.3A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
BZX55C7V5-TAP |
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 6810 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1130+ | 0.064 EUR |
2220+ | 0.032 EUR |
2780+ | 0.026 EUR |
2950+ | 0.024 EUR |
3110+ | 0.023 EUR |
593D227X9010D2TE3 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.59 EUR |
65+ | 1.12 EUR |
127+ | 0.56 EUR |
135+ | 0.53 EUR |
P6SMB33CA-E3/52 |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
274+ | 0.26 EUR |
360+ | 0.2 EUR |
530+ | 0.14 EUR |
560+ | 0.13 EUR |
P6SMB33CA-E3/5B |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/52 |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33CA-M3/5B |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/52 |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-E3/5B |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/52 |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB30CA-M3/5B |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
SMBJ30A-E3/52 |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 5209 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.36 EUR |
258+ | 0.28 EUR |
313+ | 0.23 EUR |
371+ | 0.19 EUR |
675+ | 0.11 EUR |
715+ | 0.1 EUR |
1500+ | 0.097 EUR |
SMBJ30CD-M3/H |
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
SMBJ30D-M3/H |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33.8V; 12.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8V
Max. forward impulse current: 12.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 3616 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
233+ | 0.31 EUR |
304+ | 0.24 EUR |
491+ | 0.15 EUR |
746+ | 0.096 EUR |
789+ | 0.091 EUR |
P6SMB33A-E3/52 |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-E3/5B |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/52 |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
P6SMB33A-M3/5B |
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
BZG03C10-M3-08 |
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; 50mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; 50mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Zener current: 50mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 7620 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
320+ | 0.23 EUR |
355+ | 0.2 EUR |
400+ | 0.18 EUR |
460+ | 0.16 EUR |
490+ | 0.15 EUR |
BZG03C100-M3-08 |
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 5mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 5mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
auf Bestellung 5365 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
315+ | 0.23 EUR |
355+ | 0.2 EUR |
425+ | 0.17 EUR |
435+ | 0.16 EUR |
1500+ | 0.15 EUR |
ES2F-E3/52T |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Reverse recovery time: 35ns
Load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A
Type of diode: rectifying
Max. off-state voltage: 300V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; ultrafast switching
Reverse recovery time: 35ns
Load current: 2A
auf Bestellung 4590 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
527+ | 0.14 EUR |
589+ | 0.12 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
ES2FHE3_A/H |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 50ns; DO214AA,SMB; Ufmax: 1.1V
Mounting: SMD
Case: DO214AA; SMB
Capacitance: 15pF
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Max. forward voltage: 1.1V
Max. off-state voltage: 300V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 50ns; DO214AA,SMB; Ufmax: 1.1V
Mounting: SMD
Case: DO214AA; SMB
Capacitance: 15pF
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.2mA
Max. forward voltage: 1.1V
Max. off-state voltage: 300V
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Load current: 2A
Produkt ist nicht verfügbar
SIHA15N60E-E3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.37 EUR |
32+ | 2.25 EUR |
SIHB15N60E-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHF15N60E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIHG15N60E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.72 EUR |
17+ | 4.23 EUR |
22+ | 3.26 EUR |
24+ | 3.09 EUR |
SIHP15N60E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
293D475X9035B2TE3 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: B
Case - mm: 3528
Case - inch: 1411
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: B
Case - mm: 3528
Case - inch: 1411
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
87+ | 0.83 EUR |
117+ | 0.61 EUR |
137+ | 0.52 EUR |
194+ | 0.37 EUR |
336+ | 0.21 EUR |
355+ | 0.2 EUR |
293D475X9035C2TE3 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: C
Case - mm: 6032
Case - inch: 2312
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: C
Case - mm: 6032
Case - inch: 2312
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
91+ | 0.79 EUR |
124+ | 0.58 EUR |
148+ | 0.48 EUR |
220+ | 0.33 EUR |
323+ | 0.22 EUR |
343+ | 0.21 EUR |
293D475X9035D2TE3 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: D
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Mounting: SMD
Case: D
Case - mm: 7343
Case - inch: 2917
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
162+ | 0.44 EUR |
196+ | 0.37 EUR |
255+ | 0.28 EUR |
269+ | 0.27 EUR |
500+ | 0.26 EUR |
TR3B475K035C0700 |
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1311; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: B
Case - inch: 1311
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 700mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1311; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Case: B
Case - inch: 1311
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: TR3
ESR value: 700mΩ
Produkt ist nicht verfügbar
VJ0805A221KXPTW1BC |
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 250V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 250V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 250V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 250V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar