| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SIR104LDP-T1-RE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR826LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR846ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIR870BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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CRCW0805909KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 909kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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CRCW0805931KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 931kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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| SIHU2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: IPAK; TO251 Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
Produkt ist nicht verfügbar |
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| SS10PH45-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
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| SS10PH45HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
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BFC233860272 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC Mounting: THT Terminal pitch: 7.5mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 2.7nF Operating voltage: 300V AC; 1kV DC Body dimensions: 10x4x9mm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4459ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8 Type of transistor: P-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -23.5A On-state resistance: 5mΩ |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4483ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.4A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7617DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13.9A Pulsed drain current: -60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0402Y683KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| ILQ2-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: SMD16 Conform to the norm: UL Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
Produkt ist nicht verfügbar |
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| ILQ2-X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX Type of optocoupler: optocoupler Mounting: THT Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: DIP16 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
Produkt ist nicht verfügbar |
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| VO2611-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Case: DIP8 Conform to the norm: UL Turn-on time: 20ns Turn-off time: 25ns Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: VO2611 |
Produkt ist nicht verfügbar |
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| VO2631-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Max. off-state voltage: 5V Case: DIP8 Mounting: THT Turn-on time: 20ns Output voltage: 7V Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Conform to the norm: UL Manufacturer series: VO2631 Type of optocoupler: optocoupler Turn-off time: 25ns |
Produkt ist nicht verfügbar |
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| VO615A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
Produkt ist nicht verfügbar |
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| VO617A-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: DIP4 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: VO617A |
Produkt ist nicht verfügbar |
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GI2404-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns Case: TO220AB Kind of package: tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Max. forward voltage: 0.895V Load current: 16A Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 125A Leakage current: 0.5mA |
Produkt ist nicht verfügbar |
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CRCW2512422RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Mounting: SMD Tolerance: ±1% Case - mm: 6332 Case - inch: 2512 Operating temperature: -55...155°C Type of resistor: thick film Power: 1W Resistance: 422Ω Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
Produkt ist nicht verfügbar |
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TLMG1100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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TLMG1100-GS15 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V Type of diode: LED Mounting: SMD Case: 0603 LED colour: green Luminosity: 12.5...35mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 20mA Wavelength: 564...575nm Front: flat Operating voltage: 1.8...2.4V |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL211819471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 100V DC Body dimensions: Ø21x38mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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VS-48CTQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Capacitance: 1.22nF Case: TO220AB Kind of package: tube Max. forward impulse current: 1kA Max. forward voltage: 0.83V Leakage current: 89mA |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000105608JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Mounting: THT Type of resistor: power metal Power: 1W Resistance: 5.6Ω Tolerance: ±5% Body dimensions: Ø2.5x8mm Temperature coefficient: 250ppm/°C Max. operating voltage: 350V Resistor features: high power and small dimension Leads: axial |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4948BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -25A Case: SO8 Drain-source voltage: -60V Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SM8S26AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 157A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
Produkt ist nicht verfügbar |
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SM8S33AHE3_A/I | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 124A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Application: automotive industry Technology: PAR® |
auf Bestellung 1520 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHG61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SiHH21N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.8A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHH21N65EF-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHW61N65EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 41A Pulsed drain current: 199A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 47mΩ Mounting: THT Gate charge: 371nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIS862DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |
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SMBZ5926B-E3/5B | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 5µA |
Produkt ist nicht verfügbar |
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MAL210265222E3 | VISHAY |
Category: Screw terminal and others el. capacitors Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm Operating temperature: -40...85°C Type of capacitor: electrolytic Capacitance: 2.2mF Operating voltage: 350V DC Service life: 10000h Mounting: screw type Tolerance: ±20% Body dimensions: Ø65x105mm |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW12065K62FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 5.62kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
auf Bestellung 6698 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C2000FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 200Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 1180 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMB13A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB13A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |
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P6SMB13A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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P6SMB13A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |
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P6SMB43A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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P6SMB43A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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P6SMB43A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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P6SMB43A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36.8V Max. forward impulse current: 10.1A Breakdown voltage: 43V |
Produkt ist nicht verfügbar |
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SMBJ60CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 67.7V Max. forward impulse current: 6.28A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 6440 Stücke: Lieferzeit 14-21 Tag (e) |
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B250C1500G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Max. forward impulse current: 50A Version: round Case: WOG Electrical mounting: THT Leads: wire Ø 0.75mm Kind of package: bulk |
auf Bestellung 2783 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C3302FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 33kΩ Tolerance: ±1% Power: 0.6W Operating temperature: -55...155°C Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Leads: axial |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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MBB02070C8253FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 825kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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MRS25000C8253FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 825kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
auf Bestellung 8230 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL202127471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 40V DC Body dimensions: Ø10x30mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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MBB02070C8259FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Tolerance: ±1% Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 82.5Ω Leads: axial Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm |
Produkt ist nicht verfügbar |
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| MRS25000C8259FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Tolerance: ±1% Type of resistor: thin film Mounting: THT Resistance: 82.5Ω Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads dimensions: Ø0.6x28mm |
Produkt ist nicht verfügbar |
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MBB02070C2403FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 240kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) |
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| MRS25000C2403FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 240kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
Produkt ist nicht verfügbar |
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SA13CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 23.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
Produkt ist nicht verfügbar |
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S07G-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1.5A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 4pF Case: SMF Max. forward voltage: 1.1V Max. forward impulse current: 25A Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 3140 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR104LDP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR826LDP-T1-RE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR846ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIR870BDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CRCW0805909KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW0805931KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| SIHU2N80E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Produkt ist nicht verfügbar
| SS10PH45-M3/86A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| SS10PH45HM3-A/H |
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| BFC233860272 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.99 EUR |
| 55+ | 1.3 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| SI4459ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.84 EUR |
| 43+ | 1.7 EUR |
| 46+ | 1.56 EUR |
| SI4483ADY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2040 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.66 EUR |
| 49+ | 1.49 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 500+ | 1.1 EUR |
| SI7101DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7617DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.12 EUR |
| 80+ | 0.9 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| VJ0402Y683KXJCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| ILQ2-X007 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Produkt ist nicht verfügbar
| ILQ2-X016 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Produkt ist nicht verfügbar
| VO2611-X006 |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Case: DIP8
Conform to the norm: UL
Turn-on time: 20ns
Turn-off time: 25ns
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: VO2611
Produkt ist nicht verfügbar
| VO2631-X006 |
|
Hersteller: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
Produkt ist nicht verfügbar
| VO615A-3X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Produkt ist nicht verfügbar
| VO617A-4X006 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Produkt ist nicht verfügbar
| GI2404-E3/45 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 0.895V
Load current: 16A
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 0.895V
Load current: 16A
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Produkt ist nicht verfügbar
| CRCW2512422RFKEG |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 6332
Case - inch: 2512
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 6332
Case - inch: 2512
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Produkt ist nicht verfügbar
| TLMG1100-GS08 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.2 EUR |
| TLMG1100-GS15 |
|
Hersteller: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
Category: SMD colour LEDs
Description: LED; SMD; 0603; green; 12.5÷35mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.4V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: green
Luminosity: 12.5...35mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 20mA
Wavelength: 564...575nm
Front: flat
Operating voltage: 1.8...2.4V
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 265+ | 0.27 EUR |
| 295+ | 0.24 EUR |
| 405+ | 0.18 EUR |
| 680+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| MAL211819471E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø21x38mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -55...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 100VDC; Ø21x38mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø21x38mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| VS-48CTQ060-M3 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 1kA
Max. forward voltage: 0.83V
Leakage current: 89mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; TO220AB; tube; Ir: 89mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 1.22nF
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 1kA
Max. forward voltage: 0.83V
Leakage current: 89mA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.52 EUR |
| 23+ | 3.16 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| PR01000105608JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 1W
Resistance: 5.6Ω
Tolerance: ±5%
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 350V
Resistor features: high power and small dimension
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 5.6Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Mounting: THT
Type of resistor: power metal
Power: 1W
Resistance: 5.6Ω
Tolerance: ±5%
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Max. operating voltage: 350V
Resistor features: high power and small dimension
Leads: axial
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 860+ | 0.083 EUR |
| SI4948BEY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SM8S26AHE3_A/I |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 28.9V; 157A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 157A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Produkt ist nicht verfügbar
| SM8S33AHE3_A/I |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Application: automotive industry
Technology: PAR®
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.13 EUR |
| 26+ | 2.83 EUR |
| 33+ | 2.17 EUR |
| 35+ | 2.04 EUR |
| SIHG61N65EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SiHH21N65E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHH21N65EF-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHW61N65EF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 199A; 520W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 199A
Power dissipation: 520W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 47mΩ
Mounting: THT
Gate charge: 371nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIS862DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar
| SMBZ5926B-E3/5B |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| MAL210265222E3 |
|
Hersteller: VISHAY
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Operating temperature: -40...85°C
Type of capacitor: electrolytic
Capacitance: 2.2mF
Operating voltage: 350V DC
Service life: 10000h
Mounting: screw type
Tolerance: ±20%
Body dimensions: Ø65x105mm
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 2.2mF; 350VDC; Ø65x105mm
Operating temperature: -40...85°C
Type of capacitor: electrolytic
Capacitance: 2.2mF
Operating voltage: 350V DC
Service life: 10000h
Mounting: screw type
Tolerance: ±20%
Body dimensions: Ø65x105mm
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 53.35 EUR |
| CRCW12065K62FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.62kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.62kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.62kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
auf Bestellung 6698 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1800+ | 0.042 EUR |
| 3000+ | 0.025 EUR |
| 4600+ | 0.016 EUR |
| MBB02070C2000FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 200Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 200Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 110+ | 0.71 EUR |
| 330+ | 0.22 EUR |
| 350+ | 0.21 EUR |
| P6SMB13A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB13A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| P6SMB13A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB13A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| P6SMB43A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| P6SMB43A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| P6SMB43A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| P6SMB43A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 43V; 10.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36.8V
Max. forward impulse current: 10.1A
Breakdown voltage: 43V
Produkt ist nicht verfügbar
| SMBJ60CD-M3/H |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 67.7V; 6.28A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 67.7V
Max. forward impulse current: 6.28A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 6440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 269+ | 0.27 EUR |
| 516+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| B250C1500G-E4/51 |
|
Hersteller: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Kind of package: bulk
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Version: round
Case: WOG
Electrical mounting: THT
Leads: wire Ø 0.75mm
Kind of package: bulk
auf Bestellung 2783 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 97+ | 0.74 EUR |
| 107+ | 0.67 EUR |
| 235+ | 0.3 EUR |
| 248+ | 0.29 EUR |
| MBB02070C3302FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 33kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 33kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 33kΩ
Tolerance: ±1%
Power: 0.6W
Operating temperature: -55...155°C
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Leads: axial
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.14 EUR |
| 782+ | 0.092 EUR |
| 997+ | 0.072 EUR |
| MBB02070C8253FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 825kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| MRS25000C8253FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 825kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 825kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
auf Bestellung 8230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 1230+ | 0.058 EUR |
| 2000+ | 0.036 EUR |
| 5000+ | 0.027 EUR |
| MAL202127471E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 40V DC
Body dimensions: Ø10x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 470uF; 40VDC; Ø10x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 40V DC
Body dimensions: Ø10x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| MBB02070C8259FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82.5Ω
Leads: axial
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: metal film; THT; 82.5Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Tolerance: ±1%
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 82.5Ω
Leads: axial
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Produkt ist nicht verfügbar
| MRS25000C8259FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Tolerance: ±1%
Type of resistor: thin film
Mounting: THT
Resistance: 82.5Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: thin film; THT; 82.5Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Tolerance: ±1%
Type of resistor: thin film
Mounting: THT
Resistance: 82.5Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Produkt ist nicht verfügbar
| MBB02070C2403FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 240kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
auf Bestellung 1410 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 660+ | 0.11 EUR |
| 1410+ | 0.05 EUR |
| MRS25000C2403FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 240kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 240kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Produkt ist nicht verfügbar
| SA13CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 14.4÷15.9V; 23.3A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Produkt ist nicht verfügbar
| S07G-GS08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 1.8us; SMF; Ufmax: 1.1V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Case: SMF
Max. forward voltage: 1.1V
Max. forward impulse current: 25A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 3140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 840+ | 0.087 EUR |
| 920+ | 0.078 EUR |
| 1260+ | 0.057 EUR |
| 1340+ | 0.054 EUR |