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P6SMB13A-M3/5B VISHAY
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Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Manufacturer series: P6SMB
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 13V
Max. forward impulse current: 33A
Anzahl je Verpackung: 3200 Stücke
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Technische Details P6SMB13A-M3/5B VISHAY
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape, Mounting: SMD, Manufacturer series: P6SMB, Peak pulse power dissipation: 0.6kW, Technology: TransZorb®, Features of semiconductor devices: glass passivated, Max. off-state voltage: 11.1V, Kind of package: reel; tape, Semiconductor structure: unidirectional, Leakage current: 5µA, Case: SMB, Type of diode: TVS, Tolerance: ±5%, Breakdown voltage: 13V, Max. forward impulse current: 33A, Anzahl je Verpackung: 3200 Stücke.
Weitere Produktangebote P6SMB13A-M3/5B
Foto | Bezeichnung | Hersteller | Beschreibung |
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P6SMB13A-M3/5B | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Box (TB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No |
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P6SMB13A-M3/5B | Hersteller : Vishay General Semiconductor |
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P6SMB13A-M3/5B | Hersteller : VISHAY |
![]() Description: Diode: TVS; 600W; 13V; 33A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Manufacturer series: P6SMB Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 11.1V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: SMB Type of diode: TVS Tolerance: ±5% Breakdown voltage: 13V Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |