Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10970) > Seite 95 nach 183
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SI7884BDP-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V |
auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS434DN-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V |
auf Bestellung 17830 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD15N15-95-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
auf Bestellung 6643 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD23N06-31L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
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SUD35N05-26L-E3 | Vishay Siliconix |
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SUD40N04-10A-E3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 40A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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SUD40N10-25-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50N03-06AP-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
auf Bestellung 4195 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50N03-09P-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
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SUD50N06-07L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 96A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
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SUM110N05-06L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
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SUP40N10-30-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
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SUP40N25-60-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP70N03-09BP-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
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SUP75N03-04-E3 | Vishay Siliconix |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V Power Dissipation (Max): 3.7W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V |
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SUP85N10-10-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V |
auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP85N15-21-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V |
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IRF9530STRLPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
auf Bestellung 1813 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9214TRPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
auf Bestellung 5231 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD19P06-60L-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
auf Bestellung 21289 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50P04-09L-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 14826 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50P04-15-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
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SUM110P04-04L-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V |
auf Bestellung 15904 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP75P05-08-E3 | Vishay Siliconix |
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TP0610K-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V |
auf Bestellung 29880 Stücke: Lieferzeit 10-14 Tag (e) |
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DG2012DL-T1-E3 | Vishay Siliconix | Description: IC ANALOG SWITCH SPDT SC70-6 |
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DG9461DV-T1-E3 | Vishay Siliconix |
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auf Bestellung 2593 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1900DL-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 28730 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4532ADY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W, 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
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Si4539ADY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC |
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SI4542DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete |
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Si4562DY-T1-E3 | Vishay Siliconix |
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SI4804CDY-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2157 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4920DY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI4936ADY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 15255 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4942DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4966DY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI2316BDS-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
auf Bestellung 2928 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3458BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 4.1A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 33665 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3460DV-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI4186DY-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V |
auf Bestellung 5837 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4401DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4404DY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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Si4412ADY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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Si4836DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 17A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI4842BDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V |
auf Bestellung 2491 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4860DY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI4866DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4884BDY-T1-E3 | Vishay Siliconix |
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auf Bestellung 647 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4888DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI1307DL-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI1405DL-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI2305ADS-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI2305CDS-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V |
auf Bestellung 55710 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2335DS-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2337DS-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2367DS-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
auf Bestellung 7986 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3445ADV-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI3445DV-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V |
Produkt ist nicht verfügbar |
SI7884BDP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 5730 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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4+ | 4.56 EUR |
10+ | 3.82 EUR |
100+ | 3.09 EUR |
500+ | 2.75 EUR |
1000+ | 2.35 EUR |
SIS434DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 17830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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12+ | 1.51 EUR |
15+ | 1.24 EUR |
100+ | 0.96 EUR |
500+ | 0.82 EUR |
1000+ | 0.66 EUR |
SUD15N15-95-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 150V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 6643 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
10+ | 2.9 EUR |
100+ | 2.3 EUR |
500+ | 1.95 EUR |
1000+ | 1.65 EUR |
SUD23N06-31L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 60V TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD35N05-26L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 35A TO252
Description: MOSFET N-CH 55V 35A TO252
Produkt ist nicht verfügbar
SUD40N04-10A-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 40V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
SUD40N10-25-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.67 EUR |
10+ | 4.39 EUR |
100+ | 3.09 EUR |
SUD50N03-06AP-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
auf Bestellung 4195 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.71 EUR |
13+ | 1.41 EUR |
100+ | 1.12 EUR |
500+ | 1.01 EUR |
SUD50N03-09P-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 63A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 63A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
SUD50N06-07L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 96A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET N-CH 60V 96A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N05-06L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
SUP40N10-30-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUP40N25-60-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 250V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.87 EUR |
50+ | 6.24 EUR |
100+ | 5.35 EUR |
SUP70N03-09BP-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 30V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
SUP75N03-04-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Produkt ist nicht verfügbar
SUP85N10-10-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.45 EUR |
50+ | 8.28 EUR |
100+ | 7.1 EUR |
SUP85N15-21-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
Description: MOSFET N-CH 150V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
Produkt ist nicht verfügbar
IRF9530STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.1 EUR |
10+ | 3.41 EUR |
100+ | 2.71 EUR |
IRFR9214TRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 5231 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.41 EUR |
10+ | 2 EUR |
100+ | 1.59 EUR |
500+ | 1.35 EUR |
1000+ | 1.14 EUR |
SUD19P06-60L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET P-CH 60V 19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 21289 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.08 EUR |
11+ | 1.7 EUR |
100+ | 1.32 EUR |
500+ | 1.12 EUR |
1000+ | 0.91 EUR |
SUD50P04-09L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 14826 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.15 EUR |
10+ | 3.45 EUR |
100+ | 2.74 EUR |
500+ | 2.32 EUR |
1000+ | 1.97 EUR |
SUD50P04-15-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
SUM110P04-04L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Description: MOSFET P-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
auf Bestellung 15904 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.41 EUR |
10+ | 6.22 EUR |
100+ | 5.03 EUR |
SUP75P05-08-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 55V 75A TO220AB
Description: MOSFET P-CH 55V 75A TO220AB
Produkt ist nicht verfügbar
TP0610K-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 29880 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
30+ | 0.6 EUR |
100+ | 0.36 EUR |
500+ | 0.33 EUR |
1000+ | 0.22 EUR |
DG2012DL-T1-E3 |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT SC70-6
Description: IC ANALOG SWITCH SPDT SC70-6
Produkt ist nicht verfügbar
DG9461DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 6TSOP
Description: IC SWITCH LV SPDT 6TSOP
auf Bestellung 2593 Stücke:
Lieferzeit 10-14 Tag (e)SI1900DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 30V 0.59A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 28730 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
23+ | 0.8 EUR |
100+ | 0.55 EUR |
500+ | 0.43 EUR |
1000+ | 0.35 EUR |
SI4532ADY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Si4539ADY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4542DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Si4562DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4804CDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2157 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.18 EUR |
18+ | 1.02 EUR |
100+ | 0.71 EUR |
500+ | 0.59 EUR |
1000+ | 0.5 EUR |
SI4816DY-T1-E3 | ![]() |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4920DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8-SOIC
Description: MOSFET 2N-CH 30V 8-SOIC
Produkt ist nicht verfügbar
SI4936ADY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.1 EUR |
10+ | 2.56 EUR |
100+ | 2.04 EUR |
500+ | 1.73 EUR |
1000+ | 1.47 EUR |
SI4942DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4966DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
auf Bestellung 2928 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.04 EUR |
20+ | 0.92 EUR |
100+ | 0.7 EUR |
500+ | 0.55 EUR |
1000+ | 0.44 EUR |
SI3458BDV-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 33665 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
15+ | 1.23 EUR |
100+ | 0.85 EUR |
500+ | 0.71 EUR |
1000+ | 0.6 EUR |
SI3460DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
SI4186DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 5837 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.92 EUR |
12+ | 1.57 EUR |
100+ | 1.22 EUR |
500+ | 1.03 EUR |
1000+ | 0.84 EUR |
SI4401DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Produkt ist nicht verfügbar
SI4404DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
Si4836DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Description: MOSFET N-CH 12V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4842BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
auf Bestellung 2491 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.91 EUR |
10+ | 3.25 EUR |
100+ | 2.59 EUR |
500+ | 2.19 EUR |
1000+ | 1.86 EUR |
Si4860DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Description: MOSFET N-CH 30V 11A 8-SOIC
Produkt ist nicht verfügbar
SI4866DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Description: MOSFET N-CH 12V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
10+ | 2.88 EUR |
100+ | 2.29 EUR |
500+ | 1.94 EUR |
1000+ | 1.65 EUR |
SI4884BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.5A 8-SOIC
Description: MOSFET N-CH 30V 16.5A 8-SOIC
auf Bestellung 647 Stücke:
Lieferzeit 10-14 Tag (e)SI4888DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Produkt ist nicht verfügbar
SI1307DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1405DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI2305ADS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
SI2305CDS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
Description: MOSFET P-CH 8V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
auf Bestellung 55710 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
32+ | 0.55 EUR |
100+ | 0.33 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
SI2335DS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.55 EUR |
14+ | 1.27 EUR |
100+ | 0.99 EUR |
500+ | 0.84 EUR |
SI2367DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 7986 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
32+ | 0.56 EUR |
100+ | 0.39 EUR |
500+ | 0.3 EUR |
1000+ | 0.25 EUR |
SI3445ADV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 4.4A 6-TSOP
Description: MOSFET P-CH 8V 4.4A 6-TSOP
Produkt ist nicht verfügbar
SI3445DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Description: MOSFET P-CH 8V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Produkt ist nicht verfügbar