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SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 Vishay Siliconix sia921ed.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
SIB408DK-T1-GE3 SIB408DK-T1-GE3 Vishay Siliconix sib408dk.pdf Description: MOSFET N-CH 30V 7A PPAK SC75-6L
auf Bestellung 8351 Stücke:
Lieferzeit 10-14 Tag (e)
SIHB22N60S-E3 SIHB22N60S-E3 Vishay Siliconix sihb22n60s.pdf Description: MOSFET N-CH 600V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
SIHF22N60S-E3 SIHF22N60S-E3 Vishay Siliconix sihf22n60s.pdf Description: MOSFET N-CH 600V 22A TO220
Produkt ist nicht verfügbar
SIP21106DR-33-E3 SIP21106DR-33-E3 Vishay Siliconix sip21106.pdf Description: IC REG LINEAR 3.3V 150MA SC70-5
Produkt ist nicht verfügbar
SIR416DP-T1-GE3 SIR416DP-T1-GE3 Vishay Siliconix sir416dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
auf Bestellung 329 Stücke:
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8+2.38 EUR
10+ 2.13 EUR
100+ 1.66 EUR
Mindestbestellmenge: 8
SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix sir422dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
auf Bestellung 50775 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SIR436DP-T1-GE3 SIR436DP-T1-GE3 Vishay Siliconix sir436dp.pdf Description: MOSFET N-CH 25V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix sis410dn.pdf Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 27884 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
13+ 1.36 EUR
100+ 1.06 EUR
500+ 0.9 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
SIS436DN-T1-GE3 SIS436DN-T1-GE3 Vishay Siliconix sis436dn.pdf Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Produkt ist nicht verfügbar
SUD25N15-52-E3 SUD25N15-52-E3 Vishay Siliconix sud25n15.pdf Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 6133 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
10+ 3.25 EUR
100+ 2.59 EUR
500+ 2.19 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 5
SUD40N08-16-E3 SUD40N08-16-E3 Vishay Siliconix 71323.pdf Description: MOSFET N-CH 80V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
auf Bestellung 6574 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.82 EUR
10+ 4.06 EUR
100+ 3.28 EUR
500+ 2.92 EUR
1000+ 2.5 EUR
Mindestbestellmenge: 4
SUD50N06-09L-E3 SUD50N06-09L-E3 Vishay Siliconix sud50n06.pdf Description: MOSFET N-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 20589 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+ 4.46 EUR
100+ 3.61 EUR
500+ 3.21 EUR
1000+ 2.75 EUR
Mindestbestellmenge: 4
SUD50P06-15L-E3 SUD50P06-15L-E3 Vishay Siliconix sud50p06.pdf Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 27840 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
10+ 3.45 EUR
100+ 2.74 EUR
500+ 2.32 EUR
1000+ 1.97 EUR
Mindestbestellmenge: 5
SUD50P10-43L-E3 SUD50P10-43L-E3 Vishay Siliconix sud50p10.pdf Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
10+ 3.43 EUR
100+ 2.73 EUR
500+ 2.31 EUR
1000+ 1.96 EUR
Mindestbestellmenge: 5
SUM110N03-04P-E3 SUM110N03-04P-E3 Vishay Siliconix 72366.pdf Description: MOSFET N-CH 30V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
DG442DY-T1-E3 DG442DY-T1-E3 Vishay Siliconix dg441.pdf Description: IC SWITCH QUAD SPST 16SOIC
auf Bestellung 2304 Stücke:
Lieferzeit 10-14 Tag (e)
DG9431DV-T1-E3 DG9431DV-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 6TSOP
auf Bestellung 13732 Stücke:
Lieferzeit 10-14 Tag (e)
SI1406DH-T1-E3 SI1406DH-T1-E3 Vishay Siliconix si1406dh.pdf Description: MOSFET N-CH 20V 3.1A SC70-6
Produkt ist nicht verfügbar
SI5906DU-T1-GE3 SI5906DU-T1-GE3 Vishay Siliconix SI5906DU.pdf Description: MOSFET 2N-CH 30V 6A PPAK FET
Produkt ist nicht verfügbar
SIB408DK-T1-GE3 SIB408DK-T1-GE3 Vishay Siliconix sib408dk.pdf Description: MOSFET N-CH 30V 7A PPAK SC75-6L
auf Bestellung 8351 Stücke:
Lieferzeit 10-14 Tag (e)
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix si8439db.pdf Description: MOSFET P-CH 8V MICROFOOT
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
SIHF10N40D-E3 SIHF10N40D-E3 Vishay Siliconix sihf10n40d.pdf Description: MOSFET N-CH 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
auf Bestellung 577 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
12+ 1.54 EUR
100+ 1.2 EUR
500+ 1.02 EUR
Mindestbestellmenge: 10
SIHF6N40D-E3 SIHF6N40D-E3 Vishay Siliconix sihf6n40d.pdf Description: MOSFET N-CH 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Produkt ist nicht verfügbar
SIHP6N40D-E3 SIHP6N40D-E3 Vishay Siliconix sihp6n40d.pdf Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Produkt ist nicht verfügbar
SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 Vishay Siliconix siz920dt.pdf Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Produkt ist nicht verfügbar
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix si8439db.pdf Description: MOSFET P-CH 8V MICROFOOT
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
SI1442DH-T1-GE3 SI1442DH-T1-GE3 Vishay Siliconix si1442dh.pdf Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 16385 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
SIS890DN-T1-GE3 SIS890DN-T1-GE3 Vishay Siliconix sis890dn.pdf Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
auf Bestellung 31243 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 Vishay Siliconix siz920dt.pdf Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Produkt ist nicht verfügbar
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix si8439db.pdf Description: MOSFET P-CH 8V MICROFOOT
Produkt ist nicht verfügbar
SI1442DH-T1-GE3 SI1442DH-T1-GE3 Vishay Siliconix si1442dh.pdf Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SIS890DN-T1-GE3 SIS890DN-T1-GE3 Vishay Siliconix sis890dn.pdf Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.92 EUR
6000+ 0.87 EUR
9000+ 0.83 EUR
Mindestbestellmenge: 3000
SIP12107DMP-T1-GE3 SIP12107DMP-T1-GE3 Vishay Siliconix sip12107.pdf Description: IC REG BUCK ADJ 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-SMD
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
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7+2.55 EUR
10+ 2.28 EUR
25+ 2.17 EUR
100+ 1.78 EUR
250+ 1.66 EUR
500+ 1.47 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
SIP12107DMP-T1-GE3 SIP12107DMP-T1-GE3 Vishay Siliconix sip12107.pdf Description: IC REG BUCK ADJ 3A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-SMD
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
Mindestbestellmenge: 2500
SUM90N03-2M2P-E3 SUM90N03-2M2P-E3 Vishay Siliconix sum90n03.pdf Description: MOSFET N-CH 30V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.79 EUR
Mindestbestellmenge: 800
SIC778ACD-T1-GE3 SIC778ACD-T1-GE3 Vishay Siliconix sic778a.pdf Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC778CD-T1-GE3 SIC778CD-T1-GE3 Vishay Siliconix Description: IC BUCK ADJ 40A 40MLP
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
SIC778ACD-T1-GE3 SIC778ACD-T1-GE3 Vishay Siliconix sic778a.pdf Description: IC BUCK ADJ 40A 40MLP
auf Bestellung 2842 Stücke:
Lieferzeit 10-14 Tag (e)
SIC780CD-T1-GE3 SIC780CD-T1-GE3 Vishay Siliconix sic780.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 16343 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
10+ 3.96 EUR
25+ 3.74 EUR
100+ 3.18 EUR
250+ 2.99 EUR
500+ 2.62 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 4
SIC778CD-T1-GE3 SIC778CD-T1-GE3 Vishay Siliconix Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC778ACD-T1-GE3 SIC778ACD-T1-GE3 Vishay Siliconix sic778a.pdf Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC780CD-T1-GE3 SIC780CD-T1-GE3 Vishay Siliconix sic780.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.02 EUR
6000+ 1.94 EUR
Mindestbestellmenge: 3000
SIC413CB-T1-E3 SIC413CB-T1-E3 Vishay Siliconix sic413.pdf Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Produkt ist nicht verfügbar
SIC762CD-T1-GE3 SIC762CD-T1-GE3 Vishay Siliconix sic762cd.pdf Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
SIC769CD-T1-E3 SIC769CD-T1-E3 Vishay Siliconix sic769cd.pdf Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
SIC413CB-T1-E3 SIC413CB-T1-E3 Vishay Siliconix sic413.pdf Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Produkt ist nicht verfügbar
SIR880ADP-T1-GE3 SIR880ADP-T1-GE3 Vishay Siliconix sir880adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SI4056DY-T1-GE3 SI4056DY-T1-GE3 Vishay Siliconix si4056dy.pdf Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
Produkt ist nicht verfügbar
SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 Vishay Siliconix sis892adn.pdf Description: MOSFET N-CH 100V 28A PPAK1212-8
Produkt ist nicht verfügbar
SI7655DN-T1-GE3 SI7655DN-T1-GE3 Vishay Siliconix si7655dn.pdf Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.17 EUR
6000+ 1.13 EUR
9000+ 1.09 EUR
Mindestbestellmenge: 3000
SI7615ADN-T1-GE3 SI7615ADN-T1-GE3 Vishay Siliconix si7615adn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
6000+ 0.42 EUR
9000+ 0.39 EUR
30000+ 0.38 EUR
Mindestbestellmenge: 3000
SI4090DY-T1-GE3 SI4090DY-T1-GE3 Vishay Siliconix si4090dy.pdf Description: MOSFET N-CH 100V 19.7A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
SIA448DJ-T1-GE3 SIA448DJ-T1-GE3 Vishay Siliconix sia448dj.pdf Description: MOSFET N-CH 20V 12A SC70-6L
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
SI3442CDV-T1-GE3 SI3442CDV-T1-GE3 Vishay Siliconix si3442cdv.pdf Description: MOSFET N-CH 20V 8A 6TSOP
Produkt ist nicht verfügbar
SIHP25N40D-GE3 SIHP25N40D-GE3 Vishay Siliconix sihp25n40d.pdf Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
50+ 3.78 EUR
100+ 3.24 EUR
500+ 2.88 EUR
Mindestbestellmenge: 4
SIHG25N40D-E3 SIHG25N40D-E3 Vishay Siliconix sihg25n40d.pdf Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
10+ 4.84 EUR
100+ 3.92 EUR
Mindestbestellmenge: 4
SIHG14N50D-E3 SIHG14N50D-E3 Vishay Siliconix sihg14n50d.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
SIHP14N50D-E3 SIHP14N50D-E3 Vishay Siliconix sihp14n50d.pdf Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
SIR880ADP-T1-GE3 SIR880ADP-T1-GE3 Vishay Siliconix sir880adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3220 Stücke:
Lieferzeit 10-14 Tag (e)
SIA921EDJ-T1-GE3 sia921ed.pdf
SIA921EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
SIB408DK-T1-GE3 sib408dk.pdf
SIB408DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
auf Bestellung 8351 Stücke:
Lieferzeit 10-14 Tag (e)
SIHB22N60S-E3 sihb22n60s.pdf
SIHB22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Produkt ist nicht verfügbar
SIHF22N60S-E3 sihf22n60s.pdf
SIHF22N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO220
Produkt ist nicht verfügbar
SIP21106DR-33-E3 sip21106.pdf
SIP21106DR-33-E3
Hersteller: Vishay Siliconix
Description: IC REG LINEAR 3.3V 150MA SC70-5
Produkt ist nicht verfügbar
SIR416DP-T1-GE3 sir416dp.pdf
SIR416DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
10+ 2.13 EUR
100+ 1.66 EUR
Mindestbestellmenge: 8
SIR422DP-T1-GE3 sir422dp.pdf
SIR422DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
auf Bestellung 50775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SIR436DP-T1-GE3 sir436dp.pdf
SIR436DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIS410DN-T1-GE3 sis410dn.pdf
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 27884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.65 EUR
13+ 1.36 EUR
100+ 1.06 EUR
500+ 0.9 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
SIS436DN-T1-GE3 sis436dn.pdf
SIS436DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Produkt ist nicht verfügbar
SUD25N15-52-E3 sud25n15.pdf
SUD25N15-52-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 6133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.92 EUR
10+ 3.25 EUR
100+ 2.59 EUR
500+ 2.19 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 5
SUD40N08-16-E3 71323.pdf
SUD40N08-16-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
auf Bestellung 6574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
10+ 4.06 EUR
100+ 3.28 EUR
500+ 2.92 EUR
1000+ 2.5 EUR
Mindestbestellmenge: 4
SUD50N06-09L-E3 sud50n06.pdf
SUD50N06-09L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 20589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.32 EUR
10+ 4.46 EUR
100+ 3.61 EUR
500+ 3.21 EUR
1000+ 2.75 EUR
Mindestbestellmenge: 4
SUD50P06-15L-E3 sud50p06.pdf
SUD50P06-15L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
auf Bestellung 27840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.15 EUR
10+ 3.45 EUR
100+ 2.74 EUR
500+ 2.32 EUR
1000+ 1.97 EUR
Mindestbestellmenge: 5
SUD50P10-43L-E3 sud50p10.pdf
SUD50P10-43L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.14 EUR
10+ 3.43 EUR
100+ 2.73 EUR
500+ 2.31 EUR
1000+ 1.96 EUR
Mindestbestellmenge: 5
SUM110N03-04P-E3 72366.pdf
SUM110N03-04P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
DG442DY-T1-E3 dg441.pdf
DG442DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
auf Bestellung 2304 Stücke:
Lieferzeit 10-14 Tag (e)
DG9431DV-T1-E3 dg9431.pdf
DG9431DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 6TSOP
auf Bestellung 13732 Stücke:
Lieferzeit 10-14 Tag (e)
SI1406DH-T1-E3 si1406dh.pdf
SI1406DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC70-6
Produkt ist nicht verfügbar
SI5906DU-T1-GE3 SI5906DU.pdf
SI5906DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK FET
Produkt ist nicht verfügbar
SIB408DK-T1-GE3 sib408dk.pdf
SIB408DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
auf Bestellung 8351 Stücke:
Lieferzeit 10-14 Tag (e)
SI8439DB-T1-E1 si8439db.pdf
SI8439DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
SIHF10N40D-E3 sihf10n40d.pdf
SIHF10N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
auf Bestellung 577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
12+ 1.54 EUR
100+ 1.2 EUR
500+ 1.02 EUR
Mindestbestellmenge: 10
SIHF6N40D-E3 sihf6n40d.pdf
SIHF6N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Produkt ist nicht verfügbar
SIHP6N40D-E3 sihp6n40d.pdf
SIHP6N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Produkt ist nicht verfügbar
SIZ920DT-T1-GE3 siz920dt.pdf
SIZ920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Produkt ist nicht verfügbar
SI8439DB-T1-E1 si8439db.pdf
SI8439DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
SI1442DH-T1-GE3 si1442dh.pdf
SI1442DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 16385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.5 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 25
SIS890DN-T1-GE3 sis890dn.pdf
SIS890DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
auf Bestellung 31243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
SIZ920DT-T1-GE3 siz920dt.pdf
SIZ920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Produkt ist nicht verfügbar
SI8439DB-T1-E1 si8439db.pdf
SI8439DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Produkt ist nicht verfügbar
SI1442DH-T1-GE3 si1442dh.pdf
SI1442DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SIS890DN-T1-GE3 sis890dn.pdf
SIS890DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.92 EUR
6000+ 0.87 EUR
9000+ 0.83 EUR
Mindestbestellmenge: 3000
SIP12107DMP-T1-GE3 sip12107.pdf
SIP12107DMP-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-SMD
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.28 EUR
25+ 2.17 EUR
100+ 1.78 EUR
250+ 1.66 EUR
500+ 1.47 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
SIP12107DMP-T1-GE3 sip12107.pdf
SIP12107DMP-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-SMD
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 16-QFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4.68V
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.08 EUR
Mindestbestellmenge: 2500
SUM90N03-2M2P-E3 sum90n03.pdf
SUM90N03-2M2P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.79 EUR
Mindestbestellmenge: 800
SIC778ACD-T1-GE3 sic778a.pdf
SIC778ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC778CD-T1-GE3
SIC778CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
SIC778ACD-T1-GE3 sic778a.pdf
SIC778ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
auf Bestellung 2842 Stücke:
Lieferzeit 10-14 Tag (e)
SIC780CD-T1-GE3 sic780.pdf
SIC780CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 16343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.4 EUR
10+ 3.96 EUR
25+ 3.74 EUR
100+ 3.18 EUR
250+ 2.99 EUR
500+ 2.62 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 4
SIC778CD-T1-GE3
SIC778CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC778ACD-T1-GE3 sic778a.pdf
SIC778ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Produkt ist nicht verfügbar
SIC780CD-T1-GE3 sic780.pdf
SIC780CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.02 EUR
6000+ 1.94 EUR
Mindestbestellmenge: 3000
SIC413CB-T1-E3 sic413.pdf
SIC413CB-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Produkt ist nicht verfügbar
SIC762CD-T1-GE3 sic762cd.pdf
SIC762CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
SIC769CD-T1-E3 sic769cd.pdf
SIC769CD-T1-E3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
SIC413CB-T1-E3 sic413.pdf
SIC413CB-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Produkt ist nicht verfügbar
SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SI4056DY-T1-GE3 si4056dy.pdf
SI4056DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
Produkt ist nicht verfügbar
SIS892ADN-T1-GE3 sis892adn.pdf
SIS892ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK1212-8
Produkt ist nicht verfügbar
SI7655DN-T1-GE3 si7655dn.pdf
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.17 EUR
6000+ 1.13 EUR
9000+ 1.09 EUR
Mindestbestellmenge: 3000
SI7615ADN-T1-GE3 si7615adn.pdf
SI7615ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
6000+ 0.42 EUR
9000+ 0.39 EUR
30000+ 0.38 EUR
Mindestbestellmenge: 3000
SI4090DY-T1-GE3 si4090dy.pdf
SI4090DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
SI3442CDV-T1-GE3 si3442cdv.pdf
SI3442CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Produkt ist nicht verfügbar
SIHP25N40D-GE3 sihp25n40d.pdf
SIHP25N40D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.75 EUR
50+ 3.78 EUR
100+ 3.24 EUR
500+ 2.88 EUR
Mindestbestellmenge: 4
SIHG25N40D-E3 sihg25n40d.pdf
SIHG25N40D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.77 EUR
10+ 4.84 EUR
100+ 3.92 EUR
Mindestbestellmenge: 4
SIHG14N50D-E3 sihg14n50d.pdf
SIHG14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
SIHP14N50D-E3 sihp14n50d.pdf
SIHP14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Produkt ist nicht verfügbar
SIR880ADP-T1-GE3 sir880adp.pdf
SIR880ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3220 Stücke:
Lieferzeit 10-14 Tag (e)
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