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SiHP24N65E-E3 SiHP24N65E-E3 Vishay Siliconix sihp24n65e.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SiHB24N65E-E3 SiHB24N65E-E3 Vishay Siliconix sihb24n65e.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SiHP22N60E-E3 SiHP22N60E-E3 Vishay Siliconix sihp22n60e.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHP15N60E-E3 SIHP15N60E-E3 Vishay Siliconix sihp15n60e.pdf Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
SIHF12N60E-E3 SIHF12N60E-E3 Vishay Siliconix sihf12n6.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
SIHP12N60E-E3 SIHP12N60E-E3 Vishay Siliconix sihp12n6.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
SIHF15N60E-E3 SIHF15N60E-E3 Vishay Siliconix sihf15n60e.pdf Description: MOSFET N-CH 600V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix sq3427ee.pdf Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix sq3419ee.pdf Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix sq3418ee.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
SQ1431EH-T1-GE3 SQ1431EH-T1-GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1470EH-T1-GE3 SQ1470EH-T1-GE3 Vishay Siliconix sq1470eh.pdf Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 SQ3456BEV-T1-GE3 Vishay Siliconix 67934.pdf Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3460EV-T1-GE3 SQ3460EV-T1-GE3 Vishay Siliconix sq3460ev.pdf Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 Vishay Siliconix sq3442ev.pdf Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
SQ1421EDH-T1_GE3 SQ1421EDH-T1_GE3 Vishay Siliconix sq1421edh.pdf Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3607 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+ 0.81 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
SQ1420EEH-T1-GE3 SQ1420EEH-T1-GE3 Vishay Siliconix sq1420ee.pdf Description: MOSFET N-CH 60V 1.6A SC70-6
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix sq3427ee.pdf Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix sq3419ee.pdf Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix sq3418ee.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
SQ1431EH-T1-GE3 SQ1431EH-T1-GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1470EH-T1-GE3 SQ1470EH-T1-GE3 Vishay Siliconix sq1470eh.pdf Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 SQ3456BEV-T1-GE3 Vishay Siliconix 67934.pdf Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3460EV-T1-GE3 SQ3460EV-T1-GE3 Vishay Siliconix sq3460ev.pdf Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
SQ2360EES-T1-GE3 SQ2360EES-T1-GE3 Vishay Siliconix sq2360ees.pdf Description: MOSFET N-CH 60V 4.4A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 Vishay Siliconix sq3442ev.pdf Description: MOSFET N-CH 20V 4.3A 6TSOP
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1421EDH-T1_GE3 SQ1421EDH-T1_GE3 Vishay Siliconix sq1421edh.pdf Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
SQ2361EES-T1-GE3 SQ2361EES-T1-GE3 Vishay Siliconix sq2361ees.pdf Description: MOSFET P-CH 60V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 30 V
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix sq3427ee.pdf Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix sq3419ee.pdf Description: MOSFET P-CH 40V 7.4A 6TSOP
Produkt ist nicht verfügbar
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix sq3418ee.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1431EH-T1-GE3 SQ1431EH-T1-GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70
Produkt ist nicht verfügbar
SQ1470EH-T1-GE3 SQ1470EH-T1-GE3 Vishay Siliconix sq1470eh.pdf Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 SQ3456BEV-T1-GE3 Vishay Siliconix 67934.pdf Description: MOSFET N-CH 30V 7.8A 6TSOP
Produkt ist nicht verfügbar
SQ3460EV-T1-GE3 SQ3460EV-T1-GE3 Vishay Siliconix sq3460ev.pdf Description: MOSFET N-CH 20V 8A 6TSOP
Produkt ist nicht verfügbar
SIR878ADP-T1-GE3 SIR878ADP-T1-GE3 Vishay Siliconix sir878adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR826DP-T1-GE3 SIR826DP-T1-GE3 Vishay Siliconix sir826dp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3855 Stücke:
Lieferzeit 10-14 Tag (e)
SIR878ADP-T1-GE3 SIR878ADP-T1-GE3 Vishay Siliconix sir878adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
auf Bestellung 1581 Stücke:
Lieferzeit 10-14 Tag (e)
SIR878ADP-T1-GE3 SIR878ADP-T1-GE3 Vishay Siliconix sir878adp.pdf Description: MOSFET N-CH 100V 40A PPAK SO-8
auf Bestellung 1581 Stücke:
Lieferzeit 10-14 Tag (e)
SIR870ADP-T1-GE3 SIR870ADP-T1-GE3 Vishay Siliconix sir870adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 Vishay Siliconix sir882adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.54 EUR
10+ 4.07 EUR
Mindestbestellmenge: 4
SIHB22N60E-GE3 SIHB22N60E-GE3 Vishay Siliconix sihb22n60e.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHB30N60E-GE3 SIHB30N60E-GE3 Vishay Siliconix sihb30n60e.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.57 EUR
50+ 7.59 EUR
100+ 6.5 EUR
500+ 5.78 EUR
1000+ 4.95 EUR
Mindestbestellmenge: 2
SIR826DP-T1-GE3 SIR826DP-T1-GE3 Vishay Siliconix sir826dp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SIR870ADP-T1-GE3 SIR870ADP-T1-GE3 Vishay Siliconix sir870adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 Vishay Siliconix sir882adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
Produkt ist nicht verfügbar
SIP32401ADNP-T1GE4 SIP32401ADNP-T1GE4 Vishay Siliconix sip32401a.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 100024 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
27+ 0.67 EUR
29+ 0.63 EUR
100+ 0.51 EUR
250+ 0.47 EUR
500+ 0.4 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 24
SiP32402ADNP-T1GE4 SiP32402ADNP-T1GE4 Vishay Siliconix sip32401a.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 52128 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.94 EUR
25+ 0.89 EUR
100+ 0.72 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
SIP32452DB-T2-GE1 SIP32452DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32453DB-T2-GE1 SIP32453DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIC424CD-T1-GE3 SIC424CD-T1-GE3 Vishay Siliconix sic414_sic424.pdf Description: IC REG DL BUCK/LNR SYNC 44MLP-28
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP44-28
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP44-28
Voltage/Current - Output 1: 0.75V ~ 5.5V, 6A
Voltage/Current - Output 2: 5V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
SIP32401ADNP-T1GE4 SIP32401ADNP-T1GE4 Vishay Siliconix sip32401a.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
Mindestbestellmenge: 3000
SiP32402ADNP-T1GE4 SiP32402ADNP-T1GE4 Vishay Siliconix sip32401a.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.41 EUR
6000+ 0.39 EUR
15000+ 0.37 EUR
30000+ 0.36 EUR
Mindestbestellmenge: 3000
SIP32452DB-T2-GE1 SIP32452DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32453DB-T2-GE1 SIP32453DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIC417CD-T1-E3 SIC417CD-T1-E3 Vishay Siliconix sic417.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Produkt ist nicht verfügbar
SIC769ACD-T1-GE3 SIC769ACD-T1-GE3 Vishay Siliconix sic769ac.pdf Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
SiHP24N65E-E3 sihp24n65e.pdf
SiHP24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SiHB24N65E-E3 sihb24n65e.pdf
SiHB24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SiHP22N60E-E3 sihp22n60e.pdf
SiHP22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHP15N60E-E3 sihp15n60e.pdf
SIHP15N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
SIHF12N60E-E3 sihf12n6.pdf
SIHF12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
SIHP12N60E-E3 sihp12n6.pdf
SIHP12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
SIHF15N60E-E3 sihf15n60e.pdf
SIHF15N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 sq3427ee.pdf
SQ3427EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 sq3419ee.pdf
SQ3419EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3418EEV-T1-GE3 sq3418ee.pdf
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 sq3426eev.pdf
SQ3426EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1470EH-T1-GE3 sq1470eh.pdf
SQ1470EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
SQ1421EDH-T1_GE3 sq1421edh.pdf
SQ1421EDH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 19
SQ1420EEH-T1-GE3 sq1420ee.pdf
SQ1420EEH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 1.6A SC70-6
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 sq3427ee.pdf
SQ3427EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 sq3419ee.pdf
SQ3419EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3418EEV-T1-GE3 sq3418ee.pdf
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 sq3426eev.pdf
SQ3426EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1470EH-T1-GE3 sq1470eh.pdf
SQ1470EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
SQ2360EES-T1-GE3 sq2360ees.pdf
SQ2360EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1421EDH-T1_GE3 sq1421edh.pdf
SQ1421EDH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Produkt ist nicht verfügbar
SQ2361EES-T1-GE3 sq2361ees.pdf
SQ2361EES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 30 V
Produkt ist nicht verfügbar
SQ3427EEV-T1-GE3 sq3427ee.pdf
SQ3427EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
SQ3419EEV-T1-GE3 sq3419ee.pdf
SQ3419EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
Produkt ist nicht verfügbar
SQ3418EEV-T1-GE3 sq3418ee.pdf
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
SQ3426EEV-T1-GE3 sq3426eev.pdf
SQ3426EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Produkt ist nicht verfügbar
SQ1470EH-T1-GE3 sq1470eh.pdf
SQ1470EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Produkt ist nicht verfügbar
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Produkt ist nicht verfügbar
SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR826DP-T1-GE3 sir826dp.pdf
SIR826DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3855 Stücke:
Lieferzeit 10-14 Tag (e)
SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
auf Bestellung 1581 Stücke:
Lieferzeit 10-14 Tag (e)
SIR878ADP-T1-GE3 sir878adp.pdf
SIR878ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
auf Bestellung 1581 Stücke:
Lieferzeit 10-14 Tag (e)
SIR870ADP-T1-GE3 sir870adp.pdf
SIR870ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR882ADP-T1-GE3 sir882adp.pdf
SIR882ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.54 EUR
10+ 4.07 EUR
Mindestbestellmenge: 4
SIHB22N60E-GE3 sihb22n60e.pdf
SIHB22N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHB30N60E-GE3 sihb30n60e.pdf
SIHB30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.57 EUR
50+ 7.59 EUR
100+ 6.5 EUR
500+ 5.78 EUR
1000+ 4.95 EUR
Mindestbestellmenge: 2
SIR826DP-T1-GE3 sir826dp.pdf
SIR826DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SIR870ADP-T1-GE3 sir870adp.pdf
SIR870ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR882ADP-T1-GE3 sir882adp.pdf
SIR882ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
Produkt ist nicht verfügbar
SIP32401ADNP-T1GE4 sip32401a.pdf
SIP32401ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 100024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
27+ 0.67 EUR
29+ 0.63 EUR
100+ 0.51 EUR
250+ 0.47 EUR
500+ 0.4 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 24
SiP32402ADNP-T1GE4 sip32401a.pdf
SiP32402ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 52128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.94 EUR
25+ 0.89 EUR
100+ 0.72 EUR
250+ 0.67 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
SIP32452DB-T2-GE1 sip32452.pdf
SIP32452DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32453DB-T2-GE1 sip32452.pdf
SIP32453DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIC424CD-T1-GE3 sic414_sic424.pdf
SIC424CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 44MLP-28
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP44-28
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP44-28
Voltage/Current - Output 1: 0.75V ~ 5.5V, 6A
Voltage/Current - Output 2: 5V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Produkt ist nicht verfügbar
SIP32401ADNP-T1GE4 sip32401a.pdf
SIP32401ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
Mindestbestellmenge: 3000
SiP32402ADNP-T1GE4 sip32401a.pdf
SiP32402ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
6000+ 0.39 EUR
15000+ 0.37 EUR
30000+ 0.36 EUR
Mindestbestellmenge: 3000
SIP32452DB-T2-GE1 sip32452.pdf
SIP32452DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32453DB-T2-GE1 sip32452.pdf
SIP32453DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIC417CD-T1-E3 sic417.pdf
SIC417CD-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Produkt ist nicht verfügbar
SIC769ACD-T1-GE3 sic769ac.pdf
SIC769ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
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