![SUD50P04-09L-E3 SUD50P04-09L-E3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742%3B5347%3BP%2CN%3B2.jpg)
SUD50P04-09L-E3 Vishay Siliconix
![sud50p04.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.87 EUR |
6000+ | 1.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUD50P04-09L-E3 Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote SUD50P04-09L-E3 nach Preis ab 1.83 EUR bis 4.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SUD50P04-09L-E3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 5528 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 14826 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : VISHAY |
![]() tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 5846 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
SUD50P04-09L-E3 Produktcode: 167710 |
![]() |
Produkt ist nicht verfügbar
|
|||||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 136W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -50A Pulsed drain current: -100A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SUD50P04-09L-E3 | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 136W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -50A Pulsed drain current: -100A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |