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SI7884BDP-T1-E3 Vishay
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SI7884BDP-T1-E3 Vishay MOSFETs Transistor N-CH 40V 58A 8-Pin PowerPAK SO EP T/R - Arrow.com
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 2.09 EUR |
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Technische Details SI7884BDP-T1-E3 Vishay
Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V.
Weitere Produktangebote SI7884BDP-T1-E3 nach Preis ab 1.66 EUR bis 4.56 EUR
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SI7884BDP-T1-E3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7884BDP-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7884BDP-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SI7884BDP-T1-E3 | Hersteller : Vishay |
![]() |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SI7884BDP-T1-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V |
auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7884BDP-T1-E3 | Hersteller : Vishay |
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auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7884BDP-T1-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SI7884BDP-T1-E3 | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |