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SQA444CEJW-T1_GE3 SQA444CEJW-T1_GE3 Vishay Siliconix sqa444cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQA444CEJW-T1_GE3 SQA444CEJW-T1_GE3 Vishay Siliconix sqa444cejw.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
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23+0.77 EUR
27+ 0.65 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
SIHG150N60E-GE3 SIHG150N60E-GE3 Vishay Siliconix sihg150n60e.pdf Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 900 Stücke:
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3+6.79 EUR
10+ 5.7 EUR
100+ 4.62 EUR
500+ 4.1 EUR
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SIHA150N60E-GE3 SIHA150N60E-GE3 Vishay Siliconix siha150n60e.pdf Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
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4+5.7 EUR
10+ 4.79 EUR
100+ 3.87 EUR
500+ 3.44 EUR
1000+ 2.95 EUR
2000+ 2.78 EUR
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SIHP150N60E-GE3 SIHP150N60E-GE3 Vishay Siliconix sihp150n60e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1998 Stücke:
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3+5.88 EUR
10+ 4.94 EUR
100+ 3.99 EUR
500+ 3.55 EUR
1000+ 3.04 EUR
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SQS142ENW-T1_GE3 SQS142ENW-T1_GE3 Vishay Siliconix sqs142enw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.57 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 3000
SQS142ENW-T1_GE3 SQS142ENW-T1_GE3 Vishay Siliconix sqs142enw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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12+1.5 EUR
14+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
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SQ4005EY-T1_BE3 SQ4005EY-T1_BE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Produkt ist nicht verfügbar
SQ4005EY-T1_BE3 SQ4005EY-T1_BE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
auf Bestellung 1460 Stücke:
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10+1.78 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.02 EUR
1000+ 0.8 EUR
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SIR1309DP-T1-GE3 SIR1309DP-T1-GE3 Vishay Siliconix sir1309dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Produkt ist nicht verfügbar
SIR1309DP-T1-GE3 SIR1309DP-T1-GE3 Vishay Siliconix sir1309dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
auf Bestellung 5162 Stücke:
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12+1.48 EUR
14+ 1.28 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
SIHL620S-GE3 SIHL620S-GE3 Vishay Siliconix sihl620s.pdf Description: LOGIC MOSFET N-CHANNEL 200V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
50+ 1.12 EUR
100+ 0.89 EUR
500+ 0.75 EUR
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SIE810DF-T1-GE3 SIE810DF-T1-GE3 Vishay Siliconix sie810df.pdf Description: MOSFET N-CH 20V 60A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
SIE810DF-T1-GE3 SIE810DF-T1-GE3 Vishay Siliconix sie810df.pdf Description: MOSFET N-CH 20V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
SQ4080EY-T1_BE3 SQ4080EY-T1_BE3 Vishay Siliconix sq4080ey.pdf Description: N-CHANNEL 150-V (D-S) 175C MOSFE
Produkt ist nicht verfügbar
SQ4080EY-T1_BE3 SQ4080EY-T1_BE3 Vishay Siliconix sq4080ey.pdf Description: N-CHANNEL 150-V (D-S) 175C MOSFE
auf Bestellung 2388 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
10+ 2 EUR
100+ 1.56 EUR
500+ 1.29 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 8
SI6562CDQ-T1-BE3 SI6562CDQ-T1-BE3 Vishay Siliconix si6562cd.pdf Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.66 EUR
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SI6562CDQ-T1-BE3 SI6562CDQ-T1-BE3 Vishay Siliconix si6562cd.pdf Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3238 Stücke:
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12+1.58 EUR
14+ 1.31 EUR
100+ 1.02 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 12
SQJ461EP-T2_GE3 SQJ461EP-T2_GE3 Vishay Siliconix sqj461ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.43 EUR
Mindestbestellmenge: 3000
SQJ461EP-T2_GE3 SQJ461EP-T2_GE3 Vishay Siliconix sqj461ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
auf Bestellung 5994 Stücke:
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6+3.17 EUR
10+ 2.63 EUR
100+ 2.09 EUR
500+ 1.77 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 6
SQJ457EP-T2_GE3 SQJ457EP-T2_GE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.63 EUR
6000+ 0.6 EUR
Mindestbestellmenge: 3000
SQJ457EP-T2_GE3 SQJ457EP-T2_GE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 8710 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 12
SQJ457EP-T1_BE3 SQJ457EP-T1_BE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 3000 Stücke:
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3000+0.64 EUR
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SQJ457EP-T1_BE3 SQJ457EP-T1_BE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 3668 Stücke:
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500+ 0.84 EUR
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SQJ479EP-T1_BE3 SQJ479EP-T1_BE3 Vishay Siliconix sqj479ep.pdf Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 6000 Stücke:
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3000+0.79 EUR
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SQJ479EP-T1_BE3 SQJ479EP-T1_BE3 Vishay Siliconix sqj479ep.pdf Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 8392 Stücke:
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IRFU320 IRFU320 Vishay Siliconix sihfr320.pdf Description: MOSFET N-CH 400V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SIHA21N65EF-E3 SIHA21N65EF-E3 Vishay Siliconix siha21n65ef.pdf Description: MOSFET N-CH 650V 21A TO220
Produkt ist nicht verfügbar
SI1036X-T1-GE3 SI1036X-T1-GE3 Vishay Siliconix si1036x.pdf Description: MOSFET 2N-CH 30V 0.61A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.18 EUR
6000+ 0.17 EUR
Mindestbestellmenge: 3000
SI1036X-T1-GE3 SI1036X-T1-GE3 Vishay Siliconix si1036x.pdf Description: MOSFET 2N-CH 30V 0.61A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Part Status: Active
auf Bestellung 7195 Stücke:
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SIZ998DT-T1-GE3 SIZ998DT-T1-GE3 Vishay Siliconix siz998dt.pdf Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.99 EUR
6000+ 0.94 EUR
9000+ 0.9 EUR
Mindestbestellmenge: 3000
SISF02DN-T1-GE3 Vishay Siliconix sisf02dn.pdf Description: MOSFET DUAL N-CH 25V 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Part Status: Active
Produkt ist nicht verfügbar
SISF02DN-T1-GE3 Vishay Siliconix sisf02dn.pdf Description: MOSFET DUAL N-CH 25V 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Part Status: Active
auf Bestellung 31 Stücke:
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7+2.57 EUR
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SQ7414AEN-T1_GE3 SQ7414AEN-T1_GE3 Vishay Siliconix sq7414aen.pdf Description: MOSFET N-CH 60V 16A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_GE3 SQ7414AEN-T1_GE3 Vishay Siliconix sq7414aen.pdf Description: MOSFET N-CH 60V 16A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_BE3 SQ7414AEN-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_BE3 SQ7414AEN-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQ7414AENW-T1_GE3 SQ7414AENW-T1_GE3 Vishay Siliconix sq7414aenw.pdf Description: MOSFET N-CH 60V 18A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AENW-T1_GE3 SQ7414AENW-T1_GE3 Vishay Siliconix sq7414aenw.pdf Description: MOSFET N-CH 60V 18A PPAK1212-8
Produkt ist nicht verfügbar
SIHA22N60E-GE3 SIHA22N60E-GE3 Vishay Siliconix siha22n60e.pdf Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
auf Bestellung 890 Stücke:
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5+4.31 EUR
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500+ 2.87 EUR
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SQ4940AEY-T1_GE3 SQ4940AEY-T1_GE3 Vishay Siliconix sq4940aey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 SQ4940AEY-T1_GE3 Vishay Siliconix sq4940aey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4841 Stücke:
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9+2.01 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.16 EUR
1000+ 0.91 EUR
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SI4426DY-T1-E3 SI4426DY-T1-E3 Vishay Siliconix si4426dy.pdf Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
SI4426DY-T1-E3 SI4426DY-T1-E3 Vishay Siliconix si4426dy.pdf Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
IRFR010PBF-BE3 IRFR010PBF-BE3 Vishay Siliconix sihfr010.pdf Description: MOSFET N-CH 50V 8.2A DPAK
Produkt ist nicht verfügbar
SIS478DN-T1-GE3 SIS478DN-T1-GE3 Vishay Siliconix sis478dn.pdf Description: MOSFET N-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
Produkt ist nicht verfügbar
SIS478DN-T1-GE3 SIS478DN-T1-GE3 Vishay Siliconix sis478dn.pdf Description: MOSFET N-CH 30V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
Produkt ist nicht verfügbar
DG613EEQ-T1-GE4 DG613EEQ-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC ANALOG SWITCH 16TSSOP
Produkt ist nicht verfügbar
DG613EEQ-T1-GE4 DG613EEQ-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC ANALOG SWITCH 16TSSOP
Produkt ist nicht verfügbar
SIHA24N65EF-GE3 SIHA24N65EF-GE3 Vishay Siliconix siha24n65ef.pdf Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
auf Bestellung 1769 Stücke:
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2+9.35 EUR
50+ 7.4 EUR
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500+ 5.64 EUR
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SISS30ADN-T1-GE3 SISS30ADN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Produkt ist nicht verfügbar
SISS30ADN-T1-GE3 SISS30ADN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
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SI1034CX-T1-GE3 SI1034CX-T1-GE3 Vishay Siliconix si1034cx.pdf Description: MOSFET 2N-CH 20V 0.61A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 60000 Stücke:
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3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SQ1902AEL-T1_GE3 Vishay Siliconix sq1902el.pdf Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Produkt ist nicht verfügbar
SQ1902AEL-T1_GE3 Vishay Siliconix sq1902el.pdf Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Produkt ist nicht verfügbar
SI2343CDS-T1-BE3 SI2343CDS-T1-BE3 Vishay Siliconix si2343cd.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+0.3 EUR
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SI2343CDS-T1-BE3 SI2343CDS-T1-BE3 Vishay Siliconix si2343cd.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 5871 Stücke:
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20+0.88 EUR
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500+ 0.41 EUR
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SISS61DN-T1-GE3 SISS61DN-T1-GE3 Vishay Siliconix siss61dn.pdf Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.65 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 3000
SI3433CDV-T1-BE3 SI3433CDV-T1-BE3 Vishay Siliconix si3433cdv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+ 0.26 EUR
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SI3433CDV-T1-BE3 SI3433CDV-T1-BE3 Vishay Siliconix si3433cdv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+ 0.69 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 22
SQA444CEJW-T1_GE3 sqa444cejw.pdf
SQA444CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQA444CEJW-T1_GE3 sqa444cejw.pdf
SQA444CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.65 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
SIHG150N60E-GE3 sihg150n60e.pdf
SIHG150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.79 EUR
10+ 5.7 EUR
100+ 4.62 EUR
500+ 4.1 EUR
Mindestbestellmenge: 3
SIHA150N60E-GE3 siha150n60e.pdf
SIHA150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.7 EUR
10+ 4.79 EUR
100+ 3.87 EUR
500+ 3.44 EUR
1000+ 2.95 EUR
2000+ 2.78 EUR
Mindestbestellmenge: 4
SIHP150N60E-GE3 sihp150n60e.pdf
SIHP150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.88 EUR
10+ 4.94 EUR
100+ 3.99 EUR
500+ 3.55 EUR
1000+ 3.04 EUR
Mindestbestellmenge: 3
SQS142ENW-T1_GE3 sqs142enw.pdf
SQS142ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.57 EUR
6000+ 0.54 EUR
Mindestbestellmenge: 3000
SQS142ENW-T1_GE3 sqs142enw.pdf
SQS142ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
14+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 12
SQ4005EY-T1_BE3 sq4005ey.pdf
SQ4005EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Produkt ist nicht verfügbar
SQ4005EY-T1_BE3 sq4005ey.pdf
SQ4005EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.02 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
SIR1309DP-T1-GE3 sir1309dp.pdf
SIR1309DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Produkt ist nicht verfügbar
SIR1309DP-T1-GE3 sir1309dp.pdf
SIR1309DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
auf Bestellung 5162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
14+ 1.28 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
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SIHL620S-GE3 sihl620s.pdf
SIHL620S-GE3
Hersteller: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 200V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.41 EUR
50+ 1.12 EUR
100+ 0.89 EUR
500+ 0.75 EUR
Mindestbestellmenge: 13
SIE810DF-T1-GE3 sie810df.pdf
SIE810DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
SIE810DF-T1-GE3 sie810df.pdf
SIE810DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V
Produkt ist nicht verfügbar
SQ4080EY-T1_BE3 sq4080ey.pdf
SQ4080EY-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) 175C MOSFE
Produkt ist nicht verfügbar
SQ4080EY-T1_BE3 sq4080ey.pdf
SQ4080EY-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) 175C MOSFE
auf Bestellung 2388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.24 EUR
10+ 2 EUR
100+ 1.56 EUR
500+ 1.29 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 8
SI6562CDQ-T1-BE3 si6562cd.pdf
SI6562CDQ-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.66 EUR
Mindestbestellmenge: 3000
SI6562CDQ-T1-BE3 si6562cd.pdf
SI6562CDQ-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 5.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.58 EUR
14+ 1.31 EUR
100+ 1.02 EUR
500+ 0.86 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 12
SQJ461EP-T2_GE3 sqj461ep.pdf
SQJ461EP-T2_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.43 EUR
Mindestbestellmenge: 3000
SQJ461EP-T2_GE3 sqj461ep.pdf
SQJ461EP-T2_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
auf Bestellung 5994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.17 EUR
10+ 2.63 EUR
100+ 2.09 EUR
500+ 1.77 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 6
SQJ457EP-T2_GE3 sqj457ep.pdf
SQJ457EP-T2_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.63 EUR
6000+ 0.6 EUR
Mindestbestellmenge: 3000
SQJ457EP-T2_GE3 sqj457ep.pdf
SQJ457EP-T2_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 8710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
15+ 1.24 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 12
SQJ457EP-T1_BE3 sqj457ep.pdf
SQJ457EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
Mindestbestellmenge: 3000
SQJ457EP-T1_BE3 sqj457ep.pdf
SQJ457EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 3668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
14+ 1.28 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SQJ479EP-T1_BE3 sqj479ep.pdf
SQJ479EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.79 EUR
6000+ 0.75 EUR
Mindestbestellmenge: 3000
SQJ479EP-T1_BE3 sqj479ep.pdf
SQJ479EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 8392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.9 EUR
12+ 1.56 EUR
100+ 1.21 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
IRFU320 sihfr320.pdf
IRFU320
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SIHA21N65EF-E3 siha21n65ef.pdf
SIHA21N65EF-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 21A TO220
Produkt ist nicht verfügbar
SI1036X-T1-GE3 si1036x.pdf
SI1036X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.18 EUR
6000+ 0.17 EUR
Mindestbestellmenge: 3000
SI1036X-T1-GE3 si1036x.pdf
SI1036X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Part Status: Active
auf Bestellung 7195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
35+ 0.51 EUR
100+ 0.3 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 28
SIZ998DT-T1-GE3 siz998dt.pdf
SIZ998DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.99 EUR
6000+ 0.94 EUR
9000+ 0.9 EUR
Mindestbestellmenge: 3000
SISF02DN-T1-GE3 sisf02dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 25V 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Part Status: Active
Produkt ist nicht verfügbar
SISF02DN-T1-GE3 sisf02dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 25V 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD
Part Status: Active
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.29 EUR
Mindestbestellmenge: 7
SQ7414AEN-T1_GE3 sq7414aen.pdf
SQ7414AEN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_GE3 sq7414aen.pdf
SQ7414AEN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_BE3
SQ7414AEN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQ7414AEN-T1_BE3
SQ7414AEN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQ7414AENW-T1_GE3 sq7414aenw.pdf
SQ7414AENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 18A PPAK1212-8
Produkt ist nicht verfügbar
SQ7414AENW-T1_GE3 sq7414aenw.pdf
SQ7414AENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 18A PPAK1212-8
Produkt ist nicht verfügbar
SIHA22N60E-GE3 siha22n60e.pdf
SIHA22N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.31 EUR
10+ 3.63 EUR
100+ 2.94 EUR
500+ 2.87 EUR
Mindestbestellmenge: 5
SQ4940AEY-T1_GE3 sq4940aey.pdf
SQ4940AEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SQ4940AEY-T1_GE3 sq4940aey.pdf
SQ4940AEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.16 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
SI4426DY-T1-E3 si4426dy.pdf
SI4426DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
SI4426DY-T1-E3 si4426dy.pdf
SI4426DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
IRFR010PBF-BE3 sihfr010.pdf
IRFR010PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 8.2A DPAK
Produkt ist nicht verfügbar
SIS478DN-T1-GE3 sis478dn.pdf
SIS478DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
Produkt ist nicht verfügbar
SIS478DN-T1-GE3 sis478dn.pdf
SIS478DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
Produkt ist nicht verfügbar
DG613EEQ-T1-GE4 dg611e.pdf
DG613EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16TSSOP
Produkt ist nicht verfügbar
DG613EEQ-T1-GE4 dg611e.pdf
DG613EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16TSSOP
Produkt ist nicht verfügbar
SIHA24N65EF-GE3 siha24n65ef.pdf
SIHA24N65EF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
auf Bestellung 1769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.35 EUR
50+ 7.4 EUR
100+ 6.34 EUR
500+ 5.64 EUR
1000+ 4.83 EUR
Mindestbestellmenge: 2
SISS30ADN-T1-GE3
SISS30ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Produkt ist nicht verfügbar
SISS30ADN-T1-GE3
SISS30ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Produkt ist nicht verfügbar
SI1034CX-T1-GE3 si1034cx.pdf
SI1034CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.61A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
6000+ 0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SQ1902AEL-T1_GE3 sq1902el.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Produkt ist nicht verfügbar
SQ1902AEL-T1_GE3 sq1902el.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Produkt ist nicht verfügbar
SI2343CDS-T1-BE3 si2343cd.pdf
SI2343CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
Mindestbestellmenge: 3000
SI2343CDS-T1-BE3 si2343cd.pdf
SI2343CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 5871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
24+ 0.75 EUR
100+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 20
SISS61DN-T1-GE3 siss61dn.pdf
SISS61DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.65 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 3000
SI3433CDV-T1-BE3 si3433cdv.pdf
SI3433CDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
Mindestbestellmenge: 3000
SI3433CDV-T1-BE3 si3433cdv.pdf
SI3433CDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.69 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 22
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