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SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJ910AEP-T1_BE3 SQJ910AEP-T1_BE3 Vishay Siliconix sqj910aep.pdf Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
11+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 9
SQJ992EP-T1_BE3 SQJ992EP-T1_BE3 Vishay Siliconix sqj992ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ992EP-T1_BE3 SQJ992EP-T1_BE3 Vishay Siliconix sqj992ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB80EP-T1_BE3 SQJB80EP-T1_BE3 Vishay Siliconix sqjb80ep.pdf Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJB80EP-T1_BE3 SQJB80EP-T1_BE3 Vishay Siliconix sqjb80ep.pdf Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
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10+1.83 EUR
12+ 1.51 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SQJ914EP-T1_BE3 SQJ914EP-T1_BE3 Vishay Siliconix sqj914ep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ914EP-T1_BE3 SQJ914EP-T1_BE3 Vishay Siliconix sqj914ep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB04ELP-T1_GE3 SQJB04ELP-T1_GE3 Vishay Siliconix sqjb04elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.73 EUR
Mindestbestellmenge: 3000
SQJB04ELP-T1_GE3 SQJB04ELP-T1_GE3 Vishay Siliconix sqjb04elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 23845 Stücke:
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11+1.71 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 0.99 EUR
1000+ 0.78 EUR
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SQJ992EP-T2_GE3 SQJ992EP-T2_GE3 Vishay Siliconix sqj992ep.pdf Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
6000+ 0.58 EUR
9000+ 0.56 EUR
Mindestbestellmenge: 3000
SQJ992EP-T2_GE3 SQJ992EP-T2_GE3 Vishay Siliconix sqj992ep.pdf Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10919 Stücke:
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12+1.48 EUR
15+ 1.21 EUR
100+ 0.94 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
SQJB46ELP-T1_BE3 SQJB46ELP-T1_BE3 Vishay Siliconix sqjb46elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB46ELP-T1_BE3 SQJB46ELP-T1_BE3 Vishay Siliconix sqjb46elp.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB60EP-T1_BE3 SQJB60EP-T1_BE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB60EP-T1_BE3 SQJB60EP-T1_BE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ844AEP-T1_BE3 SQJ844AEP-T1_BE3 Vishay Siliconix sqj844aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ844AEP-T1_BE3 SQJ844AEP-T1_BE3 Vishay Siliconix sqj844aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ952EP-T1_BE3 SQJ952EP-T1_BE3 Vishay Siliconix sqj952ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ952EP-T1_BE3 SQJ952EP-T1_BE3 Vishay Siliconix sqj952ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB00EP-T1_BE3 SQJB00EP-T1_BE3 Vishay Siliconix sqjb00ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB00EP-T1_BE3 SQJB00EP-T1_BE3 Vishay Siliconix sqjb00ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Vishay Siliconix sqjb40ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB40EP-T1_BE3 SQJB40EP-T1_BE3 Vishay Siliconix sqjb40ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SIC471ED-T1-GE3 SIC471ED-T1-GE3 Vishay Siliconix SiC47x_Jul04_2018.pdf Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SIC471ED-T1-GE3 SIC471ED-T1-GE3 Vishay Siliconix SiC47x_Jul04_2018.pdf Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5102 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.8 EUR
10+ 7.89 EUR
25+ 7.46 EUR
100+ 6.47 EUR
250+ 6.14 EUR
500+ 5.51 EUR
1000+ 4.64 EUR
Mindestbestellmenge: 2
SI2312CDS-T1-BE3 SI2312CDS-T1-BE3 Vishay Siliconix si2312cd.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
SI2312CDS-T1-BE3 SI2312CDS-T1-BE3 Vishay Siliconix si2312cd.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
SIC789CD-T1-GE3 SIC789CD-T1-GE3 Vishay Siliconix sic789a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC789CD-T1-GE3 SIC789CD-T1-GE3 Vishay Siliconix sic789a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.03 EUR
10+ 4.52 EUR
25+ 4.28 EUR
100+ 3.71 EUR
250+ 3.52 EUR
500+ 3.15 EUR
1000+ 2.66 EUR
Mindestbestellmenge: 4
SQJQ112ER-T1_GE3 SQJQ112ER-T1_GE3 Vishay Siliconix sqjq112er.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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2000+2.97 EUR
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SQJQ112ER-T1_GE3 SQJQ112ER-T1_GE3 Vishay Siliconix sqjq112er.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3661 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.09 EUR
10+ 5.12 EUR
100+ 4.14 EUR
500+ 3.68 EUR
1000+ 3.15 EUR
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SQJQ112E-T1_GE3 SQJQ112E-T1_GE3 Vishay Siliconix sqjq112e.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJA80EP-T1_BE3 SQJA80EP-T1_BE3 Vishay Siliconix sqja80ep-.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
SQJA80EP-T1_BE3 SQJA80EP-T1_BE3 Vishay Siliconix sqja80ep-.pdf Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
SQS460EN-T1_BE3 SQS460EN-T1_BE3 Vishay Siliconix doc?72642 Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+ 0.78 EUR
9000+ 0.75 EUR
Mindestbestellmenge: 3000
SQS460EN-T1_BE3 SQS460EN-T1_BE3 Vishay Siliconix doc?72642 Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 61799 Stücke:
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9+1.99 EUR
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500+ 1.07 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SIC468EVB-E SIC468EVB-E Vishay Siliconix sic46x.pdf Description: SIC468 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
SIC431AEVB-A SIC431AEVB-A Vishay Siliconix sic431.pdf Description: SIC431A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.6 EUR
SIC467EVB-D SIC467EVB-D Vishay Siliconix sic46x.pdf Description: SIC467 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.25 EUR
SIC466ED-T1-GE3 SIC466ED-T1-GE3 Vishay Siliconix sic46x.pdf Description: IC REG BUCK ADJ 10A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.75 EUR
Mindestbestellmenge: 3000
SIC466ED-T1-GE3 SIC466ED-T1-GE3 Vishay Siliconix sic46x.pdf Description: IC REG BUCK ADJ 10A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 10960 Stücke:
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2+9.45 EUR
10+ 8.49 EUR
25+ 8.03 EUR
100+ 6.96 EUR
250+ 6.6 EUR
500+ 5.92 EUR
1000+ 5 EUR
Mindestbestellmenge: 2
SIC478ED-T1-GE3 SIC478ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BUCK 4A PPPAK MLP55-27L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SIC478ED-T1-GE3 SIC478ED-T1-GE3 Vishay Siliconix sic47x.pdf Description: IC REG BUCK 4A PPPAK MLP55-27L
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 1573 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.64 EUR
10+ 6.86 EUR
25+ 6.49 EUR
100+ 5.62 EUR
250+ 5.33 EUR
500+ 4.78 EUR
1000+ 4.04 EUR
Mindestbestellmenge: 3
SIC461EVB-A SIC461EVB-A Vishay Siliconix sic46x.pdf Description: SIC461 EVALUATION BOARD
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.98 EUR
SIC451EVB-A Vishay Siliconix sic450_sic451_sic453.pdf Description: SIC451 EVALUATION BOARD
Produkt ist nicht verfügbar
SIC474EVB-B SIC474EVB-B Vishay Siliconix sic47x.pdf Description: SIC474 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC474
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+63.89 EUR
SIC473EVB-B SIC473EVB-B Vishay Siliconix sic47x.pdf Description: SIC473 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.22 EUR
SIC472EVB-A SIC472EVB-A Vishay Siliconix sic47x.pdf Description: SIC472 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC437AEVB-B SIC437AEVB-B Vishay Siliconix sic437.pdf Description: SIC437A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.6 EUR
SIC431BEVB-A SIC431BEVB-A Vishay Siliconix sic431.pdf Description: SIC431B EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
SIC471EVB-A SIC471EVB-A Vishay Siliconix sic47x.pdf Description: SIC471 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.98 EUR
IRFR320PBF-BE3 IRFR320PBF-BE3 Vishay Siliconix sihfr320.pdf Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SIC431EVB Vishay Siliconix sic431.pdf Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
DG1408EEN-T1-GE4 DG1408EEN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
DG1408EEN-T1-GE4 DG1408EEN-T1-GE4 Vishay Siliconix dg1408.pdf Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.94 EUR
10+ 11.68 EUR
25+ 11.14 EUR
100+ 9.67 EUR
250+ 9.24 EUR
500+ 8.42 EUR
1000+ 7.33 EUR
Mindestbestellmenge: 2
SIP32434ADN-T1E4 SIP32434ADN-T1E4 Vishay Siliconix sip32434.pdf Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Tape & Reel (TR)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
SIP32434ADN-T1E4 SIP32434ADN-T1E4 Vishay Siliconix sip32434.pdf Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Cut Tape (CT)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+ 2.17 EUR
25+ 2.05 EUR
100+ 1.75 EUR
250+ 1.64 EUR
500+ 1.44 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 8
SI3443DDV-T1-BE3 SI3443DDV-T1-BE3 Vishay Siliconix si3443ddv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+ 0.14 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SI3443DDV-T1-BE3 SI3443DDV-T1-BE3 Vishay Siliconix si3443ddv.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 11979 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 27
SQJ910AEP-T1_BE3 sqj910aep.pdf
SQJ910AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJ910AEP-T1_BE3 sqj910aep.pdf
SQJ910AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
11+ 1.64 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 9
SQJ992EP-T1_BE3 sqj992ep.pdf
SQJ992EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ992EP-T1_BE3 sqj992ep.pdf
SQJ992EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB80EP-T1_BE3 sqjb80ep.pdf
SQJB80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJB80EP-T1_BE3 sqjb80ep.pdf
SQJB80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.51 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
SQJ914EP-T1_BE3 sqj914ep.pdf
SQJ914EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ914EP-T1_BE3 sqj914ep.pdf
SQJ914EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB04ELP-T1_GE3 sqjb04elp.pdf
SQJB04ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.73 EUR
Mindestbestellmenge: 3000
SQJB04ELP-T1_GE3 sqjb04elp.pdf
SQJB04ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 23845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
12+ 1.53 EUR
100+ 1.19 EUR
500+ 0.99 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 11
SQJ992EP-T2_GE3 sqj992ep.pdf
SQJ992EP-T2_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.61 EUR
6000+ 0.58 EUR
9000+ 0.56 EUR
Mindestbestellmenge: 3000
SQJ992EP-T2_GE3 sqj992ep.pdf
SQJ992EP-T2_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
15+ 1.21 EUR
100+ 0.94 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
SQJB46ELP-T1_BE3 sqjb46elp.pdf
SQJB46ELP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB46ELP-T1_BE3 sqjb46elp.pdf
SQJB46ELP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB60EP-T1_BE3 sqjb60ep.pdf
SQJB60EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB60EP-T1_BE3 sqjb60ep.pdf
SQJB60EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ844AEP-T1_BE3 sqj844aep.pdf
SQJ844AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ844AEP-T1_BE3 sqj844aep.pdf
SQJ844AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ952EP-T1_BE3 sqj952ep.pdf
SQJ952EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ952EP-T1_BE3 sqj952ep.pdf
SQJ952EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB00EP-T1_BE3 sqjb00ep.pdf
SQJB00EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB00EP-T1_BE3 sqjb00ep.pdf
SQJB00EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB40EP-T1_BE3 sqjb40ep.pdf
SQJB40EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJB40EP-T1_BE3 sqjb40ep.pdf
SQJB40EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Produkt ist nicht verfügbar
SIC471ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC471ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SIC471ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC471ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 50.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 5102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.8 EUR
10+ 7.89 EUR
25+ 7.46 EUR
100+ 6.47 EUR
250+ 6.14 EUR
500+ 5.51 EUR
1000+ 4.64 EUR
Mindestbestellmenge: 2
SI2312CDS-T1-BE3 si2312cd.pdf
SI2312CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
SI2312CDS-T1-BE3 si2312cd.pdf
SI2312CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
SIC789CD-T1-GE3 sic789a.pdf
SIC789CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC789CD-T1-GE3 sic789a.pdf
SIC789CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.03 EUR
10+ 4.52 EUR
25+ 4.28 EUR
100+ 3.71 EUR
250+ 3.52 EUR
500+ 3.15 EUR
1000+ 2.66 EUR
Mindestbestellmenge: 4
SQJQ112ER-T1_GE3 sqjq112er.pdf
SQJQ112ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2.97 EUR
Mindestbestellmenge: 2000
SQJQ112ER-T1_GE3 sqjq112er.pdf
SQJQ112ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.12 EUR
100+ 4.14 EUR
500+ 3.68 EUR
1000+ 3.15 EUR
Mindestbestellmenge: 3
SQJQ112E-T1_GE3 sqjq112e.pdf
SQJQ112E-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJA80EP-T1_BE3 sqja80ep-.pdf
SQJA80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
SQJA80EP-T1_BE3 sqja80ep-.pdf
SQJA80EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
SQS460EN-T1_BE3 doc?72642
SQS460EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
6000+ 0.78 EUR
9000+ 0.75 EUR
Mindestbestellmenge: 3000
SQS460EN-T1_BE3 doc?72642
SQS460EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 61799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.99 EUR
11+ 1.63 EUR
100+ 1.27 EUR
500+ 1.07 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SIC468EVB-E sic46x.pdf
SIC468EVB-E
Hersteller: Vishay Siliconix
Description: SIC468 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC468
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
SIC431AEVB-A sic431.pdf
SIC431AEVB-A
Hersteller: Vishay Siliconix
Description: SIC431A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.6 EUR
SIC467EVB-D sic46x.pdf
SIC467EVB-D
Hersteller: Vishay Siliconix
Description: SIC467 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 15V
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC467
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+63.25 EUR
SIC466ED-T1-GE3 sic46x.pdf
SIC466ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 10A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.75 EUR
Mindestbestellmenge: 3000
SIC466ED-T1-GE3 sic46x.pdf
SIC466ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 10A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 15V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 10960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.45 EUR
10+ 8.49 EUR
25+ 8.03 EUR
100+ 6.96 EUR
250+ 6.6 EUR
500+ 5.92 EUR
1000+ 5 EUR
Mindestbestellmenge: 2
SIC478ED-T1-GE3 sic47x.pdf
SIC478ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK 4A PPPAK MLP55-27L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SIC478ED-T1-GE3 sic47x.pdf
SIC478ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK 4A PPPAK MLP55-27L
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 55V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 24V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 1573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.64 EUR
10+ 6.86 EUR
25+ 6.49 EUR
100+ 5.62 EUR
250+ 5.33 EUR
500+ 4.78 EUR
1000+ 4.04 EUR
Mindestbestellmenge: 3
SIC461EVB-A sic46x.pdf
SIC461EVB-A
Hersteller: Vishay Siliconix
Description: SIC461 EVALUATION BOARD
Packaging: Box
Voltage - Output: 3.3V, 5V or 12V
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+58.98 EUR
SIC451EVB-A sic450_sic451_sic453.pdf
Hersteller: Vishay Siliconix
Description: SIC451 EVALUATION BOARD
Produkt ist nicht verfügbar
SIC474EVB-B sic47x.pdf
SIC474EVB-B
Hersteller: Vishay Siliconix
Description: SIC474 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC474
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+63.89 EUR
SIC473EVB-B sic47x.pdf
SIC473EVB-B
Hersteller: Vishay Siliconix
Description: SIC473 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC473
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+59.22 EUR
SIC472EVB-A sic47x.pdf
SIC472EVB-A
Hersteller: Vishay Siliconix
Description: SIC472 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 8A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC472
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC437AEVB-B sic437.pdf
SIC437AEVB-B
Hersteller: Vishay Siliconix
Description: SIC437A EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 28V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC437
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.6 EUR
SIC431BEVB-A sic431.pdf
SIC431BEVB-A
Hersteller: Vishay Siliconix
Description: SIC431B EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 4.5V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
SIC471EVB-A sic47x.pdf
SIC471EVB-A
Hersteller: Vishay Siliconix
Description: SIC471 EVALUATION BOARD
Packaging: Box
Voltage - Output: 0.8V ~ 50V
Voltage - Input: 4.5V ~ 55V
Current - Output: 12A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC471
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+58.98 EUR
IRFR320PBF-BE3 sihfr320.pdf
IRFR320PBF-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
SIC431EVB sic431.pdf
Hersteller: Vishay Siliconix
Description: 3-24V,24V MICROBUCK DEMOBOARD
Packaging: Box
Voltage - Output: 0.6V ~ 20V
Voltage - Input: 3V ~ 24V
Current - Output: 24A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiC431
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
DG1408EEN-T1-GE4 dg1408.pdf
DG1408EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
DG1408EEN-T1-GE4 dg1408.pdf
DG1408EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 4.7OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 4.7Ohm
-3db Bandwidth: 46MHz
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 16.5V
Charge Injection: 100pC
Crosstalk: -64dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 14pF, 89pF
Current - Leakage (IS(off)) (Max): 200pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.94 EUR
10+ 11.68 EUR
25+ 11.14 EUR
100+ 9.67 EUR
250+ 9.24 EUR
500+ 8.42 EUR
1000+ 7.33 EUR
Mindestbestellmenge: 2
SIP32434ADN-T1E4 sip32434.pdf
SIP32434ADN-T1E4
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Tape & Reel (TR)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
SIP32434ADN-T1E4 sip32434.pdf
SIP32434ADN-T1E4
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Packaging: Cut Tape (CT)
Features: Latch Function, Power Good, Slew Rate Controlled
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
10+ 2.17 EUR
25+ 2.05 EUR
100+ 1.75 EUR
250+ 1.64 EUR
500+ 1.44 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 8
SI3443DDV-T1-BE3 si3443ddv.pdf
SI3443DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
6000+ 0.14 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
SI3443DDV-T1-BE3 si3443ddv.pdf
SI3443DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 11979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 27
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