SQJB04ELP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.73 EUR |
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Technische Details SQJB04ELP-T1_GE3 Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V, Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJB04ELP-T1_GE3 nach Preis ab 0.61 EUR bis 1.71 EUR
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SQJB04ELP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE |
auf Bestellung 866 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJB04ELP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: DUAL N-CHANNEL 40-V (D-S) 175C M Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 23845 Stücke: Lieferzeit 10-14 Tag (e) |
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