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SIHA11N80E-GE3 SIHA11N80E-GE3 Vishay Siliconix siha11n80e.pdf Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
auf Bestellung 1084 Stücke:
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50+ 3.12 EUR
100+ 2.67 EUR
500+ 2.61 EUR
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SIHA6N80E-GE3 SIHA6N80E-GE3 Vishay Siliconix siha6n80e.pdf Description: MOSFET N-CH 800V 5.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Produkt ist nicht verfügbar
SIHD6N80E-GE3 SIHD6N80E-GE3 Vishay Siliconix sihd6n80e.pdf Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 2062 Stücke:
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10+ 1.94 EUR
100+ 1.55 EUR
500+ 1.4 EUR
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SIHP6N80E-GE3 SIHP6N80E-GE3 Vishay Siliconix sihp6n80e.pdf Description: MOSFET N-CHAN 800V TO-220AB
Produkt ist nicht verfügbar
SIHU6N80E-GE3 SIHU6N80E-GE3 Vishay Siliconix sihu6n80e.pdf Description: MOSFET N-CH 800V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 3000 Stücke:
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5+3.7 EUR
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100+ 2.44 EUR
500+ 2.06 EUR
1000+ 1.75 EUR
3000+ 1.66 EUR
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SQD40131EL_GE3 SQD40131EL_GE3 Vishay Siliconix sqd40131el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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2000+0.88 EUR
Mindestbestellmenge: 2000
DGQ2788AEN-T1-GE4 DGQ2788AEN-T1-GE4 Vishay Siliconix dgq2788a.pdf Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 338MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -245pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Part Status: Active
Number of Circuits: 2
auf Bestellung 3000 Stücke:
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3000+0.77 EUR
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SI4946CDY-T1-GE3 SI4946CDY-T1-GE3 Vishay Siliconix si4946cdy.pdf Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
SQJ912BEP-T1_GE3 SQJ912BEP-T1_GE3 Vishay Siliconix sqj912bep.pdf Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQD40131EL_GE3 SQD40131EL_GE3 Vishay Siliconix sqd40131el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4065 Stücke:
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9+2.13 EUR
11+ 1.74 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
DGQ2788AEN-T1-GE4 DGQ2788AEN-T1-GE4 Vishay Siliconix dgq2788a.pdf Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 338MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -245pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Part Status: Active
Number of Circuits: 2
auf Bestellung 6022 Stücke:
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10+1.8 EUR
11+ 1.62 EUR
25+ 1.53 EUR
100+ 1.26 EUR
250+ 1.18 EUR
500+ 1.04 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
SI4946CDY-T1-GE3 SI4946CDY-T1-GE3 Vishay Siliconix si4946cdy.pdf Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
SQJ912BEP-T1_GE3 SQJ912BEP-T1_GE3 Vishay Siliconix sqj912bep.pdf Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2598 Stücke:
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8+2.48 EUR
10+ 2.22 EUR
100+ 1.73 EUR
500+ 1.43 EUR
1000+ 1.13 EUR
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SUM70090E-GE3 SUM70090E-GE3 Vishay Siliconix sum70090e.pdf Description: MOSFET N-CH 100V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
SIRA01DP-T1-GE3 SIRA01DP-T1-GE3 Vishay Siliconix sira01dp.pdf Description: MOSFET P-CH 30V 26A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
Mindestbestellmenge: 3000
SI4850BDY-T1-GE3 SI4850BDY-T1-GE3 Vishay Siliconix si4850bdy.pdf Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Produkt ist nicht verfügbar
SI7850ADP-T1-GE3 SI7850ADP-T1-GE3 Vishay Siliconix si7850adp.pdf Description: MOSFET N-CH 60V 10.3A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 3000
SIRA01DP-T1-GE3 SIRA01DP-T1-GE3 Vishay Siliconix sira01dp.pdf Description: MOSFET P-CH 30V 26A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
auf Bestellung 7421 Stücke:
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11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SI4850BDY-T1-GE3 SI4850BDY-T1-GE3 Vishay Siliconix si4850bdy.pdf Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 1184 Stücke:
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12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SI7850ADP-T1-GE3 SI7850ADP-T1-GE3 Vishay Siliconix si7850adp.pdf Description: MOSFET N-CH 60V 10.3A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 6735 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SIC431AED-T1-GE3 SIC431AED-T1-GE3 Vishay Siliconix sic431.pdf Description: IC REG BUCK ADJ 24A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 24A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.36 EUR
Mindestbestellmenge: 3000
SIC438BED-T1-GE3 SIC438BED-T1-GE3 Vishay Siliconix sic437.pdf Description: IC REG BUCK ADJ 8A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.89 EUR
Mindestbestellmenge: 3000
SIC437AED-T1-GE3 SIC437AED-T1-GE3 Vishay Siliconix sic437.pdf Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.26 EUR
Mindestbestellmenge: 3000
SIC431AED-T1-GE3 SIC431AED-T1-GE3 Vishay Siliconix sic431.pdf Description: IC REG BUCK ADJ 24A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 24A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 17297 Stücke:
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SIC438BED-T1-GE3 SIC438BED-T1-GE3 Vishay Siliconix sic437.pdf Description: IC REG BUCK ADJ 8A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 19626 Stücke:
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SIC437AED-T1-GE3 SIC437AED-T1-GE3 Vishay Siliconix sic437.pdf Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 5841 Stücke:
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SIC461EVB SIC461EVB Vishay Siliconix sic46x.pdf Description: REF BRD MICROBUCK SIC461
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SIC462EVB SIC462EVB Vishay Siliconix sic46x.pdf Description: REF BRD MICROBUCK SIC462
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
SIC463EVB SIC463EVB Vishay Siliconix sic46x.pdf Description: REF BRD MICROBUCK SIC463
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
SIC464EVB SIC464EVB Vishay Siliconix sic46x.pdf Description: REF BRD MICROBUCK SIC464
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
DG4053EEN-T1-GE4 DG4053EEN-T1-GE4 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SPDTX3 78OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
auf Bestellung 11724 Stücke:
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IRFR9310TRLPBF IRFR9310TRLPBF Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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SI4778DY-T1-E3 SI4778DY-T1-E3 Vishay Siliconix si4778dy.pdf Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
Produkt ist nicht verfügbar
SQD50N04-5m6_T4GE3 SQD50N04-5m6_T4GE3 Vishay Siliconix sqd50n04-5m6.pdf Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42117 Stücke:
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SIR184DP-T1-RE3 SIR184DP-T1-RE3 Vishay Siliconix sir184dp.pdf Description: MOSFET N-CH 60V 20.7A/73A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 24000 Stücke:
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SIR184DP-T1-RE3 SIR184DP-T1-RE3 Vishay Siliconix sir184dp.pdf Description: MOSFET N-CH 60V 20.7A/73A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 29029 Stücke:
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SIR878BDP-T1-RE3 SIR878BDP-T1-RE3 Vishay Siliconix sir878bdp.pdf Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 11340 Stücke:
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SIP32103DB-T1-GE1 SIP32103DB-T1-GE1 Vishay Siliconix sip32101.pdf Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 4296 Stücke:
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DG417LEDY-T1-GE4 DG417LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
DG418LEDY-T1-GE4 DG418LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2500 Stücke:
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2500+0.89 EUR
Mindestbestellmenge: 2500
DG419LEDY-T1-GE4 DG419LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPDT X 1 18OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 12500 Stücke:
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Mindestbestellmenge: 2500
DG417LEDY-T1-GE4 DG417LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 509 Stücke:
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DG418LEDY-T1-GE4 DG418LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 4994 Stücke:
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DG419LEDY-T1-GE4 DG419LEDY-T1-GE4 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPDT X 1 18OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 15021 Stücke:
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DG417LEDQ-T1-GE3 DG417LEDQ-T1-GE3 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2198 Stücke:
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DG418LEDQ-T1-GE3 DG418LEDQ-T1-GE3 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPST X 1 9OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3056 Stücke:
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DG419LEDQ-T1-GE3 DG419LEDQ-T1-GE3 Vishay Siliconix dg417le.pdf Description: IC SWITCH SPDT X 1 18OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 4377 Stücke:
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DG419BDY-T1-E3 DG419BDY-T1-E3 Vishay Siliconix dg417b.pdf Description: IC SWITCH SPDT X 1 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 6699 Stücke:
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DG9431EDY-T1-GE3 DG9431EDY-T1-GE3 Vishay Siliconix dg9431e.pdf Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 2pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
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IRF644STRRPBF IRF644STRRPBF Vishay Siliconix sihf644s.pdf Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF9520STRLPBF IRF9520STRLPBF Vishay Siliconix sihf9520.pdf Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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IRF9Z34STRRPBF IRF9Z34STRRPBF Vishay Siliconix sihf9z34.pdf Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRFBC20STRLPBF IRFBC20STRLPBF Vishay Siliconix Description: MOSFET N-CH 600V 2.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFR310TRLPBF IRFR310TRLPBF Vishay Siliconix sihfr310.pdf Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9014TRLPBF IRFR9014TRLPBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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IRFR9024TRLPBF IRFR9024TRLPBF Vishay Siliconix sihfr902.pdf Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
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IRFZ48SPBF IRFZ48SPBF Vishay Siliconix sihfz48s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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SI1967DH-T1-E3 SI1967DH-T1-E3 Vishay Siliconix si1967dh.pdf Description: MOSFET 2P-CH 20V 1.3A SC70-6
auf Bestellung 3000 Stücke:
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SI2333DS-T1-GE3 SI2333DS-T1-GE3 Vishay Siliconix si2333ds.pdf Description: MOSFET P-CH 12V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
auf Bestellung 7048 Stücke:
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SI3456DDV-T1-E3 SI3456DDV-T1-E3 Vishay Siliconix si3456ddv.pdf Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
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SIHA11N80E-GE3 siha11n80e.pdf
SIHA11N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
auf Bestellung 1084 Stücke:
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5+3.94 EUR
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SIHA6N80E-GE3 siha6n80e.pdf
SIHA6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Produkt ist nicht verfügbar
SIHD6N80E-GE3 sihd6n80e.pdf
SIHD6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 2062 Stücke:
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8+2.34 EUR
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SIHP6N80E-GE3 sihp6n80e.pdf
SIHP6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 800V TO-220AB
Produkt ist nicht verfügbar
SIHU6N80E-GE3 sihu6n80e.pdf
SIHU6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
auf Bestellung 3000 Stücke:
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5+3.7 EUR
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SQD40131EL_GE3 sqd40131el.pdf
SQD40131EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2000+0.88 EUR
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DGQ2788AEN-T1-GE4 dgq2788a.pdf
DGQ2788AEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 338MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -245pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Part Status: Active
Number of Circuits: 2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.77 EUR
Mindestbestellmenge: 3000
SI4946CDY-T1-GE3 si4946cdy.pdf
SI4946CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
SQJ912BEP-T1_GE3 sqj912bep.pdf
SQJ912BEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQD40131EL_GE3 sqd40131el.pdf
SQD40131EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
11+ 1.74 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
DGQ2788AEN-T1-GE4 dgq2788a.pdf
DGQ2788AEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 338MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -245pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Part Status: Active
Number of Circuits: 2
auf Bestellung 6022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.8 EUR
11+ 1.62 EUR
25+ 1.53 EUR
100+ 1.26 EUR
250+ 1.18 EUR
500+ 1.04 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
SI4946CDY-T1-GE3 si4946cdy.pdf
SI4946CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
SQJ912BEP-T1_GE3 sqj912bep.pdf
SQJ912BEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 40V PPSO-8L
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.48 EUR
10+ 2.22 EUR
100+ 1.73 EUR
500+ 1.43 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 8
SUM70090E-GE3 sum70090e.pdf
SUM70090E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Produkt ist nicht verfügbar
SIRA01DP-T1-GE3 sira01dp.pdf
SIRA01DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 26A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
Mindestbestellmenge: 3000
SI4850BDY-T1-GE3 si4850bdy.pdf
SI4850BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Produkt ist nicht verfügbar
SI7850ADP-T1-GE3 si7850adp.pdf
SI7850ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10.3A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 3000
SIRA01DP-T1-GE3 sira01dp.pdf
SIRA01DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 26A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
auf Bestellung 7421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SI4850BDY-T1-GE3 si4850bdy.pdf
SI4850BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8.4A/11.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 1184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SI7850ADP-T1-GE3 si7850adp.pdf
SI7850ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10.3A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 6735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
11+ 1.62 EUR
100+ 1.26 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SIC431AED-T1-GE3 sic431.pdf
SIC431AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 24A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 24A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.36 EUR
Mindestbestellmenge: 3000
SIC438BED-T1-GE3 sic437.pdf
SIC438BED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 8A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.89 EUR
Mindestbestellmenge: 3000
SIC437AED-T1-GE3 sic437.pdf
SIC437AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.26 EUR
Mindestbestellmenge: 3000
SIC431AED-T1-GE3 sic431.pdf
SIC431AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 24A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 24A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 17297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.54 EUR
10+ 3.19 EUR
25+ 3.02 EUR
100+ 2.61 EUR
250+ 2.48 EUR
500+ 2.36 EUR
Mindestbestellmenge: 5
SIC438BED-T1-GE3 sic437.pdf
SIC438BED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 8A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 19626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.17 EUR
10+ 2.84 EUR
25+ 2.68 EUR
100+ 2.28 EUR
250+ 2.14 EUR
500+ 1.89 EUR
Mindestbestellmenge: 6
SIC437AED-T1-GE3 sic437.pdf
SIC437AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 24-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: PowerPAK® MLP44-24
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 5841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.51 EUR
10+ 4.04 EUR
25+ 3.82 EUR
100+ 3.31 EUR
250+ 3.14 EUR
500+ 2.82 EUR
1000+ 2.38 EUR
Mindestbestellmenge: 4
SIC461EVB sic46x.pdf
SIC461EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC461
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 10A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC461
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SIC462EVB sic46x.pdf
SIC462EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC462
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
SIC463EVB sic46x.pdf
SIC463EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC463
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
SIC464EVB sic46x.pdf
SIC464EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC464
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
DG4053EEN-T1-GE4 dg4051e.pdf
DG4053EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX3 78OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
auf Bestellung 11724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.27 EUR
25+ 2.14 EUR
100+ 1.83 EUR
250+ 1.72 EUR
500+ 1.5 EUR
1000+ 1.24 EUR
Mindestbestellmenge: 7
IRFR9310TRLPBF sihfr931.pdf
IRFR9310TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.05 EUR
100+ 1.63 EUR
500+ 1.38 EUR
Mindestbestellmenge: 8
SI4778DY-T1-E3 si4778dy.pdf
SI4778DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
Produkt ist nicht verfügbar
SQD50N04-5m6_T4GE3 sqd50n04-5m6.pdf
SQD50N04-5m6_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 42117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
10+ 2.15 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
SIR184DP-T1-RE3 sir184dp.pdf
SIR184DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 20.7A/73A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.81 EUR
6000+ 0.78 EUR
9000+ 0.74 EUR
Mindestbestellmenge: 3000
SIR184DP-T1-RE3 sir184dp.pdf
SIR184DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 20.7A/73A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 29029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.97 EUR
11+ 1.61 EUR
100+ 1.25 EUR
500+ 1.06 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
SIR878BDP-T1-RE3 sir878bdp.pdf
SIR878BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 11340 Stücke:
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Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.17 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 7
SIP32103DB-T1-GE1 sip32101.pdf
SIP32103DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 4296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.2 EUR
10+ 1.97 EUR
25+ 1.87 EUR
100+ 1.53 EUR
250+ 1.43 EUR
500+ 1.27 EUR
1000+ 1 EUR
Mindestbestellmenge: 8
DG417LEDY-T1-GE4 dg417le.pdf
DG417LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
DG418LEDY-T1-GE4 dg417le.pdf
DG418LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.89 EUR
Mindestbestellmenge: 2500
DG419LEDY-T1-GE4 dg417le.pdf
DG419LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 18OHM 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.9 EUR
5000+ 0.85 EUR
12500+ 0.82 EUR
Mindestbestellmenge: 2500
DG417LEDY-T1-GE4 dg417le.pdf
DG417LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.15 EUR
10+ 1.92 EUR
25+ 1.82 EUR
100+ 1.5 EUR
250+ 1.4 EUR
500+ 1.24 EUR
Mindestbestellmenge: 9
DG418LEDY-T1-GE4 dg417le.pdf
DG418LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
10+ 1.87 EUR
25+ 1.77 EUR
100+ 1.46 EUR
250+ 1.36 EUR
500+ 1.2 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 9
DG419LEDY-T1-GE4 dg417le.pdf
DG419LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 18OHM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-SO
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 15021 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.11 EUR
10+ 1.89 EUR
25+ 1.8 EUR
100+ 1.48 EUR
250+ 1.38 EUR
500+ 1.22 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 9
DG417LEDQ-T1-GE3 dg417le.pdf
DG417LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.26 EUR
25+ 2.14 EUR
100+ 1.76 EUR
250+ 1.65 EUR
500+ 1.45 EUR
1000+ 1.15 EUR
Mindestbestellmenge: 7
DG418LEDQ-T1-GE3 dg417le.pdf
DG418LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST X 1 9OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 9Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.48 EUR
10+ 2.23 EUR
25+ 2.11 EUR
100+ 1.74 EUR
250+ 1.62 EUR
500+ 1.43 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 8
DG419LEDQ-T1-GE3 dg417le.pdf
DG419LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 18OHM 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 18Ohm
Supplier Device Package: 8-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 26pC
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 4377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.26 EUR
25+ 2.14 EUR
100+ 1.76 EUR
250+ 1.65 EUR
500+ 1.45 EUR
1000+ 1.15 EUR
Mindestbestellmenge: 7
DG419BDY-T1-E3 dg417b.pdf
DG419BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 6699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.75 EUR
10+ 4.27 EUR
25+ 4.03 EUR
100+ 3.5 EUR
250+ 3.32 EUR
500+ 2.98 EUR
1000+ 2.51 EUR
Mindestbestellmenge: 4
DG9431EDY-T1-GE3 dg9431e.pdf
DG9431EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 30OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 2pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 9677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.41 EUR
10+ 3.07 EUR
25+ 2.9 EUR
100+ 2.47 EUR
250+ 2.32 EUR
500+ 2.03 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 6
IRF644STRRPBF sihf644s.pdf
IRF644STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.93 EUR
10+ 4.98 EUR
100+ 4.03 EUR
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IRF9520STRLPBF sihf9520.pdf
IRF9520STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 1894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.43 EUR
10+ 2.84 EUR
100+ 2.26 EUR
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IRF9Z34STRRPBF sihf9z34.pdf
IRF9Z34STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.44 EUR
10+ 3.72 EUR
100+ 3.01 EUR
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IRFBC20STRLPBF
IRFBC20STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.59 EUR
10+ 3.81 EUR
100+ 3.04 EUR
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IRFR310TRLPBF sihfr310.pdf
IRFR310TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9014TRLPBF sihfr901.pdf
IRFR9014TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
13+ 1.37 EUR
100+ 1.07 EUR
500+ 0.9 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 11
IRFR9024TRLPBF sihfr902.pdf
IRFR9024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.06 EUR
10+ 2.54 EUR
100+ 2.02 EUR
500+ 1.71 EUR
1000+ 1.45 EUR
Mindestbestellmenge: 6
IRFZ48SPBF sihfz48s.pdf
IRFZ48SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Power Dissipation (Max): 3.7W (Ta), 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
50+ 3.83 EUR
100+ 3.28 EUR
Mindestbestellmenge: 4
SI1967DH-T1-E3 si1967dh.pdf
SI1967DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SI2333DS-T1-GE3 si2333ds.pdf
SI2333DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
auf Bestellung 7048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 13
SI3456DDV-T1-E3 si3456ddv.pdf
SI3456DDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
auf Bestellung 2040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
35+ 0.52 EUR
100+ 0.31 EUR
500+ 0.29 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 27
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