IRFBC20STRLPBF Vishay Semiconductors
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.03 EUR |
| 250+ | 2.92 EUR |
| 500+ | 1.99 EUR |
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Technische Details IRFBC20STRLPBF Vishay Semiconductors
Description: MOSFET N-CH 600V 2.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRFBC20STRLPBF nach Preis ab 3.04 EUR bis 4.59 EUR
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IRFBC20STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 2.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 416 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFBC20STRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRFBC20STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 8A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Pulsed drain current: 8A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRFBC20STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 2.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFBC20STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 8A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Pulsed drain current: 8A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |