SI4946CDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 2.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.55 EUR |
Produktrezensionen
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Technische Details SI4946CDY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4946CDY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.1 A, 6.1 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 2.8W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2.8W, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Weitere Produktangebote SI4946CDY-T1-GE3 nach Preis ab 0.62 EUR bis 1.54 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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SI4946CDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.2A/6.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 2.8W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 2680 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4946CDY-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFETs 60V Vds 20V Vgs SO-8 |
auf Bestellung 25290 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4946CDY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4946CDY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.1 A, 6.1 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 14130 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4946CDY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4946CDY-T1-GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 6.1 A, 6.1 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
auf Bestellung 14130 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4946CDY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4946CDY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4946CDY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4946CDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.1A Pulsed drain current: 25A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 51.6mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4946CDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.1A Pulsed drain current: 25A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 51.6mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |